JPH0180962U - - Google Patents
Info
- Publication number
- JPH0180962U JPH0180962U JP1987177678U JP17767887U JPH0180962U JP H0180962 U JPH0180962 U JP H0180962U JP 1987177678 U JP1987177678 U JP 1987177678U JP 17767887 U JP17767887 U JP 17767887U JP H0180962 U JPH0180962 U JP H0180962U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film containing
- photovoltaic device
- utility
- scope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
第１図は本考案光起電力装置の一実施例を示す
模式的断面図であつて、１は基板、２は半導体膜
、２ｐはＰ型ダイヤモンド薄膜、２ｉはＩ型非晶
質シリコン層、３は背面電極、を夫々示している
。
FIG. 1 is a schematic cross-sectional view showing an embodiment of the photovoltaic device of the present invention, in which 1 is a substrate, 2 is a semiconductor film, 2p is a P-type diamond thin film, 2i is an I-type amorphous silicon layer, 3 indicates a back electrode.
Claims (1)
ンを含む非晶質半導体薄膜との半導体接合を有す
る光起電力装置。 A photovoltaic device having a semiconductor junction between a P-type diamond thin film containing a crystalline phase and an amorphous semiconductor thin film containing silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987177678U JPH0180962U (en) | 1987-11-20 | 1987-11-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987177678U JPH0180962U (en) | 1987-11-20 | 1987-11-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0180962U true JPH0180962U (en) | 1989-05-30 |
Family
ID=31469335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987177678U Pending JPH0180962U (en) | 1987-11-20 | 1987-11-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0180962U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068664A (en) * | 1983-06-24 | 1985-04-19 | デ ビア−ズ インダストリアル ダイアモンド デイビイジヨン（プロプライエタリイ）リミテツド | Semiconductor diamond and power generation device using it |
| JPS62162367A (en) * | 1986-11-19 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | Composite having carbon coat |
-
1987
- 1987-11-20 JP JP1987177678U patent/JPH0180962U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068664A (en) * | 1983-06-24 | 1985-04-19 | デ ビア−ズ インダストリアル ダイアモンド デイビイジヨン（プロプライエタリイ）リミテツド | Semiconductor diamond and power generation device using it |
| JPS62162367A (en) * | 1986-11-19 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | Composite having carbon coat |