JPH0158962U - - Google Patents
Info
- Publication number
- JPH0158962U JPH0158962U JP15288187U JP15288187U JPH0158962U JP H0158962 U JPH0158962 U JP H0158962U JP 15288187 U JP15288187 U JP 15288187U JP 15288187 U JP15288187 U JP 15288187U JP H0158962 U JPH0158962 U JP H0158962U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- semiconductor portion
- photovoltaic device
- semiconductor
- opposite conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
第1図は本考案光起電力装置の第1実施例を示
す模式的断面図、第2図は第2実施例を示す模式
的断面図、第3図は第1・第2実施例及び比較例
の入射光スペクトルに対する収集効率を示す特性
図である。
1,6…受光面電極、2…n型半導体部分、3
…p型結晶半導体部分、4,9…背面電極、7…
p型半導体部分、8…n型結晶半導体部分。
Fig. 1 is a schematic sectional view showing the first embodiment of the photovoltaic device of the present invention, Fig. 2 is a schematic sectional view showing the second embodiment, and Fig. 3 is a comparison of the first and second embodiments. FIG. 3 is a characteristic diagram showing collection efficiency for an example incident light spectrum. 1, 6... Light-receiving surface electrode, 2... N-type semiconductor portion, 3
...p-type crystal semiconductor portion, 4, 9...back electrode, 7...
p-type semiconductor portion, 8...n-type crystal semiconductor portion.
Claims (1)
1種類の成分薄層が逆導電型の非晶質半導体であ
る組成の異なつた複数種類の成分薄層を周期的に
多数回積層し、全体として逆導電型を呈する半導
体部分と、を直接接触させると共に、逆導電型半
導体部分を光入射側に配置したことを特徴とする
光起電力装置。 (2) 上記一導電型の結晶半導体部分は多結晶半
導体からなる実用新案登録請求の範囲第1項記載
の光起電力装置。 (3) 上記逆導電型の結晶半導体部分は単結晶半
導体からなる実用新案登録請求の範囲第1項記載
の光起電力装置。[Claims for Utility Model Registration] (1) A crystalline semiconductor portion of one conductivity type and a plurality of component thin layers of different compositions in which at least one component thin layer is an amorphous semiconductor of the opposite conductivity type are periodically arranged. What is claimed is: 1. A photovoltaic device comprising: a semiconductor portion which is laminated many times and which exhibits an opposite conductivity type as a whole; (2) The photovoltaic device according to claim 1, wherein the crystalline semiconductor portion of one conductivity type is made of a polycrystalline semiconductor. (3) The photovoltaic device according to claim 1, wherein the opposite conductivity type crystal semiconductor portion is made of a single crystal semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15288187U JPH0158962U (en) | 1987-10-06 | 1987-10-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15288187U JPH0158962U (en) | 1987-10-06 | 1987-10-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0158962U true JPH0158962U (en) | 1989-04-13 |
Family
ID=31428212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15288187U Pending JPH0158962U (en) | 1987-10-06 | 1987-10-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0158962U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0823114A (en) * | 1994-07-08 | 1996-01-23 | Hitachi Ltd | Solar cell |
| JP2014027119A (en) * | 2012-07-27 | 2014-02-06 | Nippon Telegr & Teleph Corp <Ntt> | Solar cell |
-
1987
- 1987-10-06 JP JP15288187U patent/JPH0158962U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0823114A (en) * | 1994-07-08 | 1996-01-23 | Hitachi Ltd | Solar cell |
| JP2014027119A (en) * | 2012-07-27 | 2014-02-06 | Nippon Telegr & Teleph Corp <Ntt> | Solar cell |
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