JPH0188521U - - Google Patents
Info
- Publication number
- JPH0188521U JPH0188521U JP18548787U JP18548787U JPH0188521U JP H0188521 U JPH0188521 U JP H0188521U JP 18548787 U JP18548787 U JP 18548787U JP 18548787 U JP18548787 U JP 18548787U JP H0188521 U JPH0188521 U JP H0188521U
- Authority
- JP
- Japan
- Prior art keywords
- side electrode
- surface wave
- wave device
- sip
- type surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
第１図は本考案の表面波装置の組立て前の状態
を示す図、第２図は組立て完了した表面波装置の
側面断面図、第３図は要部の正面断面図、第４図
は従来のリードフレームを示す図である。
１…リードフレーム、２…フープ、３〜６…リ
ード端子、８…表面波素子、１４…絶縁樹脂層、
１５…導電層。
Fig. 1 is a diagram showing the surface wave device of the present invention before assembly, Fig. 2 is a side sectional view of the assembled surface wave device, Fig. 3 is a front sectional view of the main parts, and Fig. 4 is the conventional surface wave device. FIG. 3 is a diagram showing a lead frame. DESCRIPTION OF SYMBOLS 1... Lead frame, 2... Hoop, 3-6... Lead terminal, 8... Surface wave element, 14... Insulating resin layer,
15...Conductive layer.
Claims (1)
に接続された各リード端子が全て表面波素子の一
側方に延出され、且つ表面波素子の外周が導電層
でシールドされてなるＳＩＰ型表面波装置におい
て、 前記ホツト側電極に接続されたリード端子がア
ース側電極の外側方を迂回するように弯曲させて
あると共に、その弯曲部分が大きな曲率半径をも
つて丸く形成されていることを特徴とするＳＩＰ
型表面波装置。 (2) 前記弯曲部分は外縁の曲率半径が０．５mm
〜１．５mmに設定されていることを特徴とする実
用新案登録請求の範囲第(1)項に記載のＳＩＰ型
表面波装置。[Claims for Utility Model Registration] (1) All lead terminals connected to the hot side electrode and the ground side electrode of the surface wave element extend to one side of the surface wave element, and the outer periphery of the surface wave element is In a SIP type surface acoustic wave device shielded with a conductive layer, the lead terminal connected to the hot side electrode is curved so as to go around the outside of the ground side electrode, and the curved portion has a large radius of curvature. A SIP characterized by a round shape.
type surface wave device. (2) The radius of curvature of the outer edge of the curved portion is 0.5 mm.
The SIP type surface acoustic wave device according to claim (1) of the utility model registration, characterized in that the width is set to 1.5 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18548787U JPH0188521U (en) | 1987-12-04 | 1987-12-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18548787U JPH0188521U (en) | 1987-12-04 | 1987-12-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0188521U true JPH0188521U (en) | 1989-06-12 |
Family
ID=31699777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18548787U Pending JPH0188521U (en) | 1987-12-04 | 1987-12-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0188521U (en) |
-
1987
- 1987-12-04 JP JP18548787U patent/JPH0188521U/ja active Pending