JPH0190199U - - Google Patents

Info

Publication number
JPH0190199U
JPH0190199U JP18426087U JP18426087U JPH0190199U JP H0190199 U JPH0190199 U JP H0190199U JP 18426087 U JP18426087 U JP 18426087U JP 18426087 U JP18426087 U JP 18426087U JP H0190199 U JPH0190199 U JP H0190199U
Authority
JP
Japan
Prior art keywords
load
mos transistor
series
memory circuit
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18426087U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP18426087U priority Critical patent/JPH0190199U/ja
Publication of JPH0190199U publication Critical patent/JPH0190199U/ja
Pending legal-status Critical Current

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Landscapes

  • Static Random-Access Memory (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の実施例を示す回路図、第2図
は従来のフルMOSFETの場合の回路構成図、
第3図は従来の高抵抗ポリシリコンとMOSFE
Tの回路構成図である。 T〜T12…トランジスタ素子、R…高抵
抗ポリシリコン、b…データ線。
Figure 1 is a circuit diagram showing an embodiment of the present invention, Figure 2 is a circuit diagram of a conventional full MOSFET,
Figure 3 shows conventional high resistance polysilicon and MOSFE
It is a circuit block diagram of T. T9 to T12 ...Transistor element, R3 ...High resistance polysilicon, b...Data line.

Claims (1)

【実用新案登録請求の範囲】 各セルが、ドライブ用MOSトランジスタと負
荷との直列回路をクロスカツプル接続してなるメ
モリ回路において、 上記負荷の一方は高抵抗負荷であり、 他方の負荷は直列接続されたMOSトランジス
タに対して相補関係にある逆導電型チヤネルのM
OSトランジスタからなることを特徴とするメモ
リ回路。
[Claims for Utility Model Registration] In a memory circuit in which each cell is formed by cross-coupling a series circuit of a drive MOS transistor and a load, one of the loads is a high resistance load and the other load is connected in series. M of the opposite conductivity type channel complementary to the MOS transistor
A memory circuit characterized by comprising an OS transistor.
JP18426087U 1987-12-01 1987-12-01 Pending JPH0190199U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18426087U JPH0190199U (en) 1987-12-01 1987-12-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18426087U JPH0190199U (en) 1987-12-01 1987-12-01

Publications (1)

Publication Number Publication Date
JPH0190199U true JPH0190199U (en) 1989-06-14

Family

ID=31475633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18426087U Pending JPH0190199U (en) 1987-12-01 1987-12-01

Country Status (1)

Country Link
JP (1) JPH0190199U (en)

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