JPH0196097A - Process for growing single crystal of fe-si-al system alloy - Google Patents
Process for growing single crystal of fe-si-al system alloyInfo
- Publication number
- JPH0196097A JPH0196097A JP62252237A JP25223787A JPH0196097A JP H0196097 A JPH0196097 A JP H0196097A JP 62252237 A JP62252237 A JP 62252237A JP 25223787 A JP25223787 A JP 25223787A JP H0196097 A JPH0196097 A JP H0196097A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- rod
- alloy
- single crystal
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は磁気ヘッド等の磁気製品に使用されるFe−8
i−Al系合金単結晶の育成法に関し、とくに大口径で
合金組成の偏析等が少ない良好な単結晶を形成するに適
したF e −8i −AI 系合金単結晶の育成法に
関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention is directed to Fe-8 used in magnetic products such as magnetic heads.
The present invention relates to a method for growing an i-Al alloy single crystal, and particularly to a method for growing an Fe-8i-AI alloy single crystal suitable for forming a good single crystal with a large diameter and less segregation of alloy composition.
Fe−8i−Al系磁性合金(登録商標センダスト)は
、きわめてすぐれた高透磁率、高硬度の合金であり、オ
ーディオ用の磁気ヘッド、VTR又はR−DAT用の磁
気ヘッドの材料として使用されている。Fe-8i-Al magnetic alloy (registered trademark Sendust) is an alloy with extremely high magnetic permeability and high hardness, and is used as a material for magnetic heads for audio, VTR, or R-DAT. There is.
しかしながら、上記Fe−8i−Al系磁性合金は、多
結晶材であり、このため磁気ヘッド材として使用した場
合は、磁気ヘッドのギヤ、プ形成時に存在する結晶粒の
面方位により磁気テープへの磁力のバラツキが生じたり
、あるいは結晶粒界の存在により、互いの結合力が弱ま
って機械的強度が脆く研削、切削加工時のカケ、チッピ
ング、クラック等の問題点がある。However, the above-mentioned Fe-8i-Al magnetic alloy is a polycrystalline material, and therefore, when used as a magnetic head material, it is difficult to attach to the magnetic tape due to the plane orientation of the crystal grains present during the formation of the gears and plates of the magnetic head. Due to variations in magnetic force or the presence of grain boundaries, mutual bonding strength is weakened and the mechanical strength is weak, resulting in problems such as chipping, chipping, and cracking during grinding and cutting.
一方、Fe−8i−Al系合金の単結晶は、結晶粒界が
存在しないため機械的強度が強いこと、又フ、シ定な面
方位を選ぶことにより磁気テープへの磁力のバラツキが
小さくなり耐摩耗性が向上することが知られているが、
そのt11100育成が充分ではなく、形成される単結
晶体の径が小さいことや、合金組成に偏析が生じたりし
て上記単結晶性イ■の効果が得られず、又生産に適さな
かった。On the other hand, the single crystal of the Fe-8i-Al alloy has strong mechanical strength because there are no grain boundaries, and by selecting a fixed plane orientation, the variation in magnetic force to the magnetic tape is reduced. Although it is known to improve wear resistance,
The t11100 growth was not sufficient, the diameter of the single crystal formed was small, and segregation occurred in the alloy composition, so the effect of single crystal property (i) could not be obtained and it was not suitable for production.
例えば、一般に電子ビーム帯溶融法による育成では、試
料の径を大きくしようとすると育成時における溶融物が
外へ流れ出したり、蒸発による組成偏析が大きくなり、
又一般に、ブリッジマン法による育成では常圧でルツボ
内の試料を溶融し、除々に冷却するので、七<に蒸発に
よる組成偏析が大きくなる。For example, in general, when growing using the electron beam belt melting method, if you try to increase the diameter of the sample, the molten material during the growing may flow out, or compositional segregation due to evaporation will increase.
In addition, in general, when growing by the Bridgman method, the sample in the crucible is melted at normal pressure and gradually cooled, so compositional segregation due to evaporation becomes large.
そこで本発明は、上記問題点を解決すべく大口径で合金
組成偏析の少ないFe−Si−Aj’系磁性合金弔結晶
の育成法を目的としたものである。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention aims at a method for growing Fe-Si-Aj'-based magnetic alloy crystals having a large diameter and low alloy composition segregation.
〔問題点を解決するための手段及び作用〕上記問題点を
解決するため本発明では、F e 。[Means and effects for solving the problems] In order to solve the above problems, the present invention uses Fe.
S r s Alの原料を非酸化性の雰囲気中で加熱溶
解してFe−5t−Al系合金の多結晶棒を作製する工
程と、該多結晶体をルツボ内に収納する工程と、該多結
晶体及びルツボを加圧炉に設置する工程と、加熱手段で
該多結晶体を溶解する工程と、該加熱手段と該多結晶体
とを該多結晶体の長手方向に沿って相対的に除々に移動
させてFe−8i−A!系合金の単結晶を成長させる工
程とからなるFe−8t−Al系合金1j結品の育成法
である。A step of producing a polycrystalline rod of Fe-5t-Al alloy by heating and melting the raw material of S r s Al in a non-oxidizing atmosphere, a step of storing the polycrystalline body in a crucible, and a step of storing the polycrystalline body in a crucible. a step of placing the crystal and the crucible in a pressure furnace; a step of melting the polycrystal with a heating means; and a step of relatively displacing the heating means and the polycrystal along the longitudinal direction of the polycrystal. Gradually move it to Fe-8i-A! This is a method for growing Fe-8t-Al alloy 1j crystals, which comprises a step of growing a single crystal of the alloy.
Fe−5i−Al系合金tイ1結晶を上記rr成法とす
ることにより、形成される単結晶体の径を大きくとれ、
又組成偏析の少ない均一な組成のFe−Si−Al系合
金単結晶を形成する。By using the above rr formation method for the Fe-5i-Al alloy t-1 crystal, the diameter of the formed single crystal can be increased,
Further, a Fe-Si-Al alloy single crystal having a uniform composition with little compositional segregation is formed.
“ 次に本発明になるFe−5i−Al系合金単結晶
のt1成法の実施例について説明する。第1図は原料か
ら育成までのフローチャートである。このフローチャー
トに従って本実施例を述べる。まず、高純度の原料例え
ば、F e 99.98%、Si99、999%、Al
99.999%を用αする。“Next, an example of the t1 formation method of Fe-5i-Al alloy single crystal according to the present invention will be explained. Fig. 1 is a flow chart from raw material to growth. This example will be described according to this flow chart. First, , high purity raw materials such as Fe 99.98%, Si 99, 999%, Al
Use 99.999%.
次に上記原料をF e 83.5%、Si9.5%、A
l6.0%の割合で秤量して、これら秤量したFe。Next, the above raw materials were mixed with F e 83.5%, Si 9.5%, A
These weighed Fe were weighed at a rate of l6.0%.
S s % Al原料を第2図に示す真空溶解鋳造装置
のアルミナ製ルツボ9に入れ、真空状■又は不活性ガス
中の非酸化性雰囲気で高周波フィル10により加熱溶解
(溶湯14)する。次に、第2図の矢印イ、口、ハの如
(アルミナ製ルツボ9内の溶湯14を鉄製金型に鋳込ん
で多結晶の丸棒試料11を作成する。次に、第3図の如
く丸棒試料11をアルミナ環のタンマン管と呼ばれるル
ツボ20内に収納し、そのルツボ20をモリブデンワイ
ヤ31で結ばれたカーボンヒータ30内に収納する。次
に第4図の如く、丸棒試料11を収納したカーボンヒー
タ30を単結晶育成装置である高圧高周波誘導前!!A
装置50にセットする。高圧高周波誘導加熱装置50は
、類40内にカーボンヒータ30を固定する上部チャッ
ク13、下部チャック12及びカーボンヒータ30の周
囲に配される高周波加熱コイル21を有する。上記装置
50は、更に外部にカーボンヒータ30を回転する上部
試料回転上下駆動部24、上部試料回転上下駆動部25
1 類40内にAr(アルゴン)ガスを供給するArガ
スボンベ41、類40内を真空にするロータリーポンプ
42、類40内の圧力を;jjllる圧力計43、高周
波加熱コイル21の電LfX44及び炉40の外周に配
され、炉40の外部を水流によって冷却する銅パイプ4
5を備えている。なお、説明上、カーボンヒータ30、
ルツボ20、試t111及び高周波加熱コイル21の図
は炉40に比して拡大しである。The S s % Al raw material is placed in an alumina crucible 9 of a vacuum melting and casting apparatus shown in FIG. 2, and heated and melted (molten metal 14) using a high frequency filter 10 in a vacuum state (1) or in a non-oxidizing atmosphere in an inert gas. Next, the molten metal 14 in the alumina crucible 9 is cast into an iron mold to create a polycrystalline round bar sample 11 as shown by arrows A, C, and C in FIG. As shown in FIG. The carbon heater 30 containing 11 is placed before high-pressure high-frequency induction, which is a single crystal growth device!!A
Set it in the device 50. The high-pressure, high-frequency induction heating device 50 includes an upper chuck 13 and a lower chuck 12 that fix the carbon heater 30 within the casing 40, and a high-frequency heating coil 21 disposed around the carbon heater 30. The above device 50 further includes an upper sample rotation vertical drive section 24 and an upper sample rotation vertical drive section 25 that rotate the carbon heater 30 externally.
1 Ar gas cylinder 41 that supplies Ar (argon) gas into the class 40, a rotary pump 42 that makes the interior of the class 40 a vacuum, a pressure gauge 43 that measures the pressure inside the class 40, an electric LfX 44 of the high-frequency heating coil 21, and a furnace. A copper pipe 4 arranged around the outer circumference of the furnace 40 and cooling the outside of the furnace 40 with a water flow.
5. In addition, for the sake of explanation, the carbon heater 30,
The diagrams of the crucible 20, sample t111, and high-frequency heating coil 21 are enlarged compared to the furnace 40.
」1記装置50に丸棒試料11及びルツボ2゜を収納し
たカーボンヒータ30をセットした後、炉40の内部は
ロータリーポンプ42によす適度の」゛〔空雰囲気にし
、その後Arガスボンベ41により炉40内部にArガ
スを供給し、炉内を例えば1気圧、5気圧、10気圧に
加圧する。次に、高周波加熱コイル21に高周波電流を
流し、高周被加熱コイル21付近のカーボンヒータ30
の温度を上昇させ、その熱がルツボ20を伝わって丸棒
試料11の一部を溶融し溶融部Aを形成する。After setting the carbon heater 30 containing the round bar sample 11 and the crucible 2° in the device 50 mentioned above, the inside of the furnace 40 is emptied to an appropriate atmosphere using the rotary pump 42, and then heated with an Ar gas cylinder 41. Ar gas is supplied into the furnace 40, and the inside of the furnace is pressurized to, for example, 1 atm, 5 atm, or 10 atm. Next, a high frequency current is passed through the high frequency heating coil 21, and the carbon heater 30 near the high frequency heated coil 21 is heated.
The temperature of the round bar sample 11 is increased, and the heat is transmitted through the crucible 20 and melts a part of the round bar sample 11 to form a melted part A.
このとき、上部試料回転上下駆動部24を駆動させてカ
ーボンヒータ30を回転させ、同時にルツボ20、丸棒
試料11が回転し、温度分布を均一にする。次に、第4
図の状態で上部試料回転上下駆動部24を駆動させてカ
ーボンヒータ30を回転させながら矢印Bの如く下方に
除々に移動させ、溶融部Aを冷却させて単結晶を形成す
る。ここで、高周波加熱コイル21と対応する丸棒試料
の一部は新たな溶融部を形成するが、カーボンヒータ3
0が更にB方向に移動するとその溶融部が冷却されて単
結晶が形成される。こうして、高周波加熱コイルが丸棒
試料11の上部に対応するまで上記駆動部24によりカ
ーボンヒータ30を移動させ、その後傾40内のArガ
スを抜き、ロータリーポンプ42で一度真空にしたあと
常圧にし、炉40から単結晶化された丸棒を取り出し、
t11結晶のY1成が終了する。At this time, the upper sample rotating vertical drive unit 24 is driven to rotate the carbon heater 30, and at the same time the crucible 20 and the round bar sample 11 are rotated to make the temperature distribution uniform. Next, the fourth
In the state shown in the figure, the upper sample rotating vertical drive section 24 is driven to rotate the carbon heater 30 and gradually move it downward as shown by arrow B, thereby cooling the melted part A and forming a single crystal. Here, a part of the round bar sample corresponding to the high frequency heating coil 21 forms a new melted part, but the carbon heater 3
When 0 moves further in the B direction, the molten part is cooled and a single crystal is formed. In this way, the carbon heater 30 is moved by the drive unit 24 until the high-frequency heating coil corresponds to the upper part of the round bar sample 11, and then the Ar gas in the tilt 40 is removed, and the rotary pump 42 is used to evacuate the carbon heater 30, which is then evacuated to normal pressure. , take out the single crystallized round bar from the furnace 40,
The Y1 formation of the t11 crystal is completed.
第5図は本発明に係るFe5i−Al系合金単結晶の育
成法の第2実施例である。本実施例は、カーボンヒータ
30を固定し、高周波加熱コイル21を移動する構成に
したものである。図中、44は高周波加熱コイル21の
電源、45は高周波加熱コイルを上下に移動させる上下
駆動部である。FIG. 5 shows a second embodiment of the method for growing a Fe5i-Al alloy single crystal according to the present invention. In this embodiment, the carbon heater 30 is fixed and the high frequency heating coil 21 is moved. In the figure, 44 is a power source for the high frequency heating coil 21, and 45 is a vertical drive unit that moves the high frequency heating coil up and down.
上記育成において、炉40内は上述した如くArガスで
加圧されており、このことにより、丸棒試料11の溶融
部の溶融物、とくにAlが蒸発してしまわないようにし
て組成の偏析を減少させている。又、丸棒試料11の溶
融部がルツボ20の存在により、その溶融物が外部へ流
出しないようにしており、ルツボ20の径を適時に選択
して大口径の単結晶を形成できる。In the above-mentioned growth, the inside of the furnace 40 is pressurized with Ar gas as described above, and this prevents the molten material in the molten part of the round bar sample 11, especially Al, from evaporating and prevents compositional segregation. It is decreasing. Furthermore, the existence of the crucible 20 prevents the melted portion of the round bar sample 11 from flowing out, and by appropriately selecting the diameter of the crucible 20, a large diameter single crystal can be formed.
なお、下部チャック12及び下部試料回転上下駆動部2
5は、カーボンヒータ30が上部のチャック部13等と
共に固定あるいは回転される場合、あるいは下部のみで
固定あるいは回転される場合に用いられ、実施例の如く
上部のみで固定あるいは回転される場合は不要となる。In addition, the lower chuck 12 and the lower sample rotating vertical drive unit 2
5 is used when the carbon heater 30 is fixed or rotated together with the upper chuck part 13, etc., or when it is fixed or rotated only at the lower part, and is unnecessary when it is fixed or rotated only at the upper part as in the embodiment. becomes.
又カーボンヒータ30は高周波加熱コイル21により丸
棒試料11が加熱され溶融し、融液が温度の低いルツボ
20に接触してルツボ20が割れることを防止するため
に用いられたものであり、ルツボ材料の選択により省略
できる。又、高周波加熱コイル21により、丸棒試料1
1の一部を溶融しているが、全体を溶融するに比べて重
力による組成偏析を少なくしているものの蒸発による組
成偏析を少なくしており、全体を溶融する場合も本発明
に含まれるものである。The carbon heater 30 is used to prevent the crucible 20 from cracking due to the round bar sample 11 being heated and melted by the high-frequency heating coil 21 and the melt coming into contact with the low temperature crucible 20. It can be omitted depending on the material selection. Moreover, the round bar sample 1 is heated by the high frequency heating coil 21.
Although a part of 1 is melted, the composition segregation due to gravity is less than when the whole is melted, but the composition segregation due to evaporation is also reduced, and the case where the whole is melted is also included in the present invention. It is.
上述の如く、本発明になるFe−8i−Al系合金単結
晶の育成法は、F’e1S 11Alの原料を非酸化性
の雰囲気で加熱溶融して Fe−8i−Al系合金の多
結晶棒を作製する工程と、該多結晶棒をルツボ内に収納
する工程と、該多結晶棒及びルツボを加圧炉に設置する
工程と、加熱手段で該多結晶棒を溶解する工程と、該加
熱手段と該多結晶棒とを該多結晶棒の長手方向に沿って
相対的に除々に移動させてFe−8i−Al系合金の単
結晶を成長させる工程とからなるため、ルツボの径を適
時に選択することにより大口径の、又加圧状態で育成す
るので合金組成の偏析が少ない良好なFe−8i−Al
系合金単結晶の育成を形成できる等の効果を生じる。As mentioned above, the method for growing the Fe-8i-Al alloy single crystal according to the present invention involves heating and melting the raw material of F'e1S 11Al in a non-oxidizing atmosphere to produce a polycrystalline rod of the Fe-8i-Al alloy. a step of storing the polycrystalline rod in a crucible; a step of installing the polycrystalline rod and the crucible in a pressure furnace; a step of melting the polycrystalline rod with heating means; and a step of melting the polycrystalline rod with heating means. The method consists of the step of growing a single crystal of Fe-8i-Al alloy by gradually moving the means and the polycrystalline rod relatively along the longitudinal direction of the polycrystalline rod, so that the diameter of the crucible can be adjusted at an appropriate time. By selecting Fe-8i-Al, it has a large diameter, and since it is grown under pressure, it can produce good Fe-8i-Al with less segregation of alloy composition.
This produces effects such as the ability to grow single crystals of the system alloy.
第1図〜第4図はいずれも本発明に係るFe−8i−A
I系合金の単結晶の育成法の第1実施例を示し、第1図
は原料から育成までのフローチャート、第2図は真空溶
解鋳造装置の概略図、第3図は多結晶の丸棒試料をルツ
ボ及びカーボンヒータに収納した様子を示す図、第4図
は高圧高周波加熱装置の概略図、第5図は本発明に係る
Fe−8t−Al系合金の単結晶の第2実施例を示す高
圧高周波加熱装置の概略図である。
11・・・丸棒試料 20・・・ルツボ21
・・・高周波加熱コイル
50.51・・・高圧高周波誘導加熱装置第1図
第2図
第3図
第4図Fig. 1 to Fig. 4 are all Fe-8i-A according to the present invention.
The first example of the method for growing single crystals of I-series alloys is shown. Figure 1 is a flowchart from raw materials to growth, Figure 2 is a schematic diagram of a vacuum melting and casting apparatus, and Figure 3 is a polycrystalline round bar sample. Fig. 4 is a schematic diagram of a high-pressure high-frequency heating device, and Fig. 5 shows a second embodiment of a single crystal of Fe-8t-Al alloy according to the present invention. FIG. 1 is a schematic diagram of a high-pressure high-frequency heating device. 11... Round bar sample 20... Crucible 21
...High frequency heating coil 50.51...High pressure high frequency induction heating device Fig. 1 Fig. 2 Fig. 3 Fig. 4
Claims (1)
融してFe−Si−Al系合金の多結晶棒を作製する工
程と、該多結晶棒をルツボ内に収納する工程と、該多結
晶棒及びルツボを加圧炉に設置する工程と、加熱手段で
該多結晶棒を溶解する工程と、該加熱手段と該多結晶棒
とを該多結晶棒の長手方向に沿って相対的に除々に移動
させてFe−Si−Al系合金の単結晶を成長させる工
程とからなるFe−Si−Al系合金単結晶の育成法。A step of heating and melting raw materials of Fe, Si, and Al in a non-oxidizing atmosphere to produce a polycrystalline rod of Fe-Si-Al alloy, and a step of storing the polycrystalline rod in a crucible. a step of installing a polycrystalline rod and a crucible in a pressure furnace; a step of melting the polycrystalline rod with a heating means; and a step of moving the heating means and the polycrystalline rod relative to each other along the longitudinal direction of the polycrystalline rod. A method for growing a single crystal of an Fe-Si-Al alloy, which comprises a step of growing a single crystal of an Fe-Si-Al alloy by gradually moving the crystal to a single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62252237A JPH0196097A (en) | 1987-10-06 | 1987-10-06 | Process for growing single crystal of fe-si-al system alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62252237A JPH0196097A (en) | 1987-10-06 | 1987-10-06 | Process for growing single crystal of fe-si-al system alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0196097A true JPH0196097A (en) | 1989-04-14 |
Family
ID=17234422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62252237A Pending JPH0196097A (en) | 1987-10-06 | 1987-10-06 | Process for growing single crystal of fe-si-al system alloy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0196097A (en) |
-
1987
- 1987-10-06 JP JP62252237A patent/JPH0196097A/en active Pending
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