JPH0199268A - Method for manufacturing anisotropic oxide superconductor thin film - Google Patents
Method for manufacturing anisotropic oxide superconductor thin filmInfo
- Publication number
- JPH0199268A JPH0199268A JP62257843A JP25784387A JPH0199268A JP H0199268 A JPH0199268 A JP H0199268A JP 62257843 A JP62257843 A JP 62257843A JP 25784387 A JP25784387 A JP 25784387A JP H0199268 A JPH0199268 A JP H0199268A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxide superconductor
- substrate
- superconductor thin
- oriented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、超電導エレクトロニクス等の分野に属する
異方性酸化物超電導体薄膜の製造方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for producing an anisotropic oxide superconductor thin film belonging to the field of superconducting electronics and the like.
スパッタリング、真空蒸着等の薄膜形成装置による従来
の異方性酸化物超電導体薄膜の製造方法では、基板とし
て５ｒＴｉＯ，、ＭｇＯ、イツトリウム安定化ＺｒＯ□
等の単結晶基板を用い、基板の種類、基板の温度、膜の
成長速度を適当に選ぶことにより、基板上に異方性酸化
物超電導体薄膜をエピタキシャル成長させている。例え
ば“日経ニューマテリアル”１９８７年５月１１日号の
第７６〜８４ページでは、Ｌａ−５ｒ−Ｃｕ−０系超電
導体薄膜の製造にサファイア単結晶基板の（０１１２）
面およびＴｉ５ｒＯ，単結晶基板の（１００）面を用い
ている。In conventional methods for manufacturing anisotropic oxide superconductor thin films using thin film forming equipment such as sputtering and vacuum evaporation, 5rTiO, MgO, yttrium-stabilized ZrO, etc. are used as substrates.
An anisotropic oxide superconductor thin film is epitaxially grown on the substrate by appropriately selecting the type of substrate, substrate temperature, and film growth rate. For example, on pages 76 to 84 of the May 11, 1987 issue of "Nikkei New Materials", it is reported that (0112) of a sapphire single crystal substrate is
The (100) plane of a Ti5rO single crystal substrate is used.
このような従来の異方性酸化物超電導体薄膜の製造方法
では、あらかじめ種々の方法で作製されたバルクの単結
晶をその結晶方位を決定して切断したものを基板として
、その上にスパッタリング。In conventional methods for producing anisotropic oxide superconductor thin films, bulk single crystals prepared in advance by various methods are cut after determining the crystal orientation, and then sputtered onto the substrate.
真空蒸着等の薄膜形成装置により酸化物薄膜を被覆し、
異方性酸化物超電導体薄膜をエビタキシャル成長させて
いる。Cover with an oxide thin film using a thin film forming device such as vacuum evaporation,
Anisotropic oxide superconductor thin films are grown epitaxially.
しかるに上記のような従来の異方性酸化物超電４体薄膜
の製造方法においては、基板として５ｒＴｉＯ，等の単
結晶基板を用い、その上にスパッタリング、真空蒸着等
により膜を被覆させていたので、単結晶基板を作成する
ために製造コストが非常に高くなるとともに、大面積の
単結晶基板が得られにくいので、小面積の異方性酸化物
超電導体薄膜しか得られないという問題点があった。However, in the conventional manufacturing method of the above-mentioned anisotropic oxide superelectric 4-body thin film, a single crystal substrate such as 5rTiO is used as the substrate, and a film is coated thereon by sputtering, vacuum evaporation, etc. Therefore, the manufacturing cost to create a single crystal substrate becomes extremely high, and since it is difficult to obtain a large area single crystal substrate, there is a problem that only a small area anisotropic oxide superconductor thin film can be obtained. there were.
この発明は上記問題点を解決するためのもので、基板と
して単結晶基板を用いるが必要なく、低コストで、しか
も大面積の異方性酸化物超電導体薄膜を製造することが
できる異方性酸化物超電導体薄膜の製造方法を提供する
ことを目的としている。This invention is intended to solve the above-mentioned problems, and it is possible to produce an anisotropic oxide superconductor thin film with a large area at low cost without using a single crystal substrate as a substrate. The present invention aims to provide a method for manufacturing an oxide superconductor thin film.
この発明に係る異方性酸化物超電導体薄膜の製造方法は
、薄膜形成装置を使用して、基板上に配向性酸化物絶縁
膜を形成し、さらにその上に酸化物超電導体薄膜を形成
する方法である。A method for producing an anisotropic oxide superconductor thin film according to the present invention includes forming an oriented oxide insulating film on a substrate using a thin film forming apparatus, and further forming an oxide superconductor thin film on the oriented oxide insulating film. It's a method.
すなわち本発明は基板上に配向性酸化物絶縁膜を介して
異方性酸化物超電導体薄膜を形成する方法である。That is, the present invention is a method for forming an anisotropic oxide superconductor thin film on a substrate via an oriented oxide insulating film.
本発明で用いる基板としては、単結晶基板である必要は
なく、非晶質または配向性のない多結晶基板など、任意
のものが使用可能である。本発明ではまずこのような基
板上にスパッタリング、真空蒸着等の薄膜形成装置によ
り配向性酸化物絶縁膜を形成する。The substrate used in the present invention does not need to be a single crystal substrate, and any substrate such as an amorphous or non-oriented polycrystalline substrate can be used. In the present invention, an oriented oxide insulating film is first formed on such a substrate using a thin film forming apparatus such as sputtering or vacuum evaporation.
上記配向性酸化物絶縁膜を形成するための材料としては
、ＮｉＯ、 Ｓｒ０１Ｍｇ０．ＣａＯ５ＢａＯ等の立方
晶系、あるいはＺｎＯ１Ｎｄ、０．、Ｃｒ、 ０３、Ｂ
ａＯ等の六方晶系の酸化物がある。Examples of materials for forming the oriented oxide insulating film include NiO, Sr01Mg0. Cubic system such as CaO5BaO, or ZnO1Nd, 0. ,Cr,03,B
There are hexagonal oxides such as aO.
このようにして配向性酸化物絶縁膜を形成した基板は単
結晶基板と等価的な基板になるので、本発明ではさらに
その上に、従来と同様に被膜形成装置を使用して酸化物
被膜を被覆し、異方性酸化物超電導体薄膜をエピタキシ
ャル成長させる。酸化物超電導体としては、Ｌａ−８ｒ
−Ｃｕ−０系、Ｙ−Ｂａ−Ｃｕ−０系など任意のものが
ある。Since the substrate on which the oriented oxide insulating film is formed in this way becomes a substrate equivalent to a single crystal substrate, in the present invention, an oxide film is further formed thereon using a film forming apparatus in the same way as in the past. and epitaxially grow an anisotropic oxide superconductor thin film. As an oxide superconductor, La-8r
-Cu-0 series, Y-Ba-Cu-0 series, and other arbitrary ones.
この発明では上記のように、非晶質または配向性のない
多結晶基板上に、配向性酸化物絶縁膜をスパッタリング
、真空蒸着等により形成し、さらにその上に酸化物超電
導体の薄膜を形成することにより、単結晶の基板を使用
することなく、大面積の異方性酸化物超電導体薄膜を低
コストで製造することができる。In this invention, as described above, an oriented oxide insulating film is formed on an amorphous or non-oriented polycrystalline substrate by sputtering, vacuum evaporation, etc., and a thin film of an oxide superconductor is further formed thereon. By doing so, a large-area anisotropic oxide superconductor thin film can be manufactured at low cost without using a single-crystal substrate.
この発明では、その物質が蒸着される基板が何らの結晶
配向性を有しない材料を用いても、その蒸着する際の基
板温度等の条件を適当に選べば、その形成された膜が容
易に配向する材料、特に立方晶系および六方晶系のもの
を先ず蒸着し、配向膜を作製することによって最終目的
である酸化物超電導膜の異方性成長を達成できる。In this invention, even if the substrate on which the substance is deposited is a material that does not have any crystal orientation, the formed film can be easily formed by appropriately selecting the conditions such as the substrate temperature during the deposition. The ultimate goal of anisotropic growth of an oxide superconducting film can be achieved by first depositing an oriented material, particularly a cubic or hexagonal material, to produce an oriented film.
以下、この発明の一実施例について説明する。 An embodiment of the present invention will be described below.
スパッタリング薄膜形成装置の真空チャンバーに石英ガ
ラス製の基板を配置して、基板温度を２００〜７００℃
とし、スパッタリングによりＺｎＯまたはＭｇＯの配向
性酸化物絶縁膜を基板上に形成した。A quartz glass substrate is placed in a vacuum chamber of a sputtering thin film forming apparatus, and the substrate temperature is set at 200 to 700°C.
Then, a ZnO or MgO oriented oxide insulating film was formed on the substrate by sputtering.
その膜が形成された基板をさらに６００〜８５０℃に加
熱し、Ｌａ−５ｒ−Ｃｕ−０系またはＹ−Ｂａ−Ｃｕ−
０系の酸化物超電導体膜をその上にスパッタリングによ
り形成し、エピタキシャル成長させて異方性酸化物超電
導体薄膜を形成した。The substrate on which the film was formed was further heated to 600 to 850°C, and La-5r-Cu-0 or Y-Ba-Cu-
A 0-based oxide superconductor film was formed thereon by sputtering and epitaxially grown to form an anisotropic oxide superconductor thin film.
上記ＺｎＯは基板温度３００℃で、ＭｇＯは６００℃で
基板上に良くＣ軸配向する。Ｌａ−３ｒ−Ｃｕ−０系お
よびＹ−Ｂａ−Ｃｕ−０系酸化物超電導体膜は前記酸化
物絶縁膜被覆基板上に基板温度６００℃で良くＣ軸配向
する。またＬａ−５ｒ−Ｃｕ−０系では８００℃にて＜
１０３＞軸方向に配向する。The above-mentioned ZnO has a good C-axis orientation on the substrate at a substrate temperature of 300°C, and MgO at a substrate temperature of 600°C. The La-3r-Cu-0 based and Y-Ba-Cu-0 based oxide superconductor films are well C-axis oriented on the oxide insulating film coated substrate at a substrate temperature of 600°C. In addition, in the La-5r-Cu-0 system, <
103> axially oriented.
なお上記実施例において、酸化物絶縁材料を適当に選べ
ば（例えば立方晶系のＮｉＯまたは六方晶系のＣｒ２０
３ ）、その絶縁膜は容易に配向性の結晶成長をする。In the above embodiments, if the oxide insulating material is appropriately selected (for example, cubic NiO or hexagonal Cr20),
3) The insulating film easily grows oriented crystals.
そのため単結晶基板と等価的になり、その上に形成する
酸化物超電導体薄膜の異方性成長は容易となる。Therefore, it becomes equivalent to a single crystal substrate, and the anisotropic growth of the oxide superconductor thin film formed thereon becomes easy.
以上のように、この発明によれば、基板に配向性結晶成
長の容易な酸化物絶縁膜を薄膜形成装置によって形成す
ることにより、単結晶基板と等測的な基板が得られ、そ
の結果異方性酸化物超電導体薄膜が製造可能となり、デ
バイスへの適用範囲が広がるとともに、大面積化、コイ
ル化も可能となり、かつ低コストに製造できるという効
果がある。As described above, according to the present invention, by forming an oxide insulating film that facilitates oriented crystal growth on a substrate using a thin film forming apparatus, a substrate that is isometric to a single-crystal substrate can be obtained. It has become possible to manufacture a oriented oxide superconductor thin film, which has the effect of widening the range of applications for devices, making it possible to increase the area and form coils, and being able to manufacture it at low cost.
Claims (3)
絶縁膜を形成し、さらにその上に酸化物超電導体薄膜を
形成することを特徴とする異方性酸化物超電導体薄膜の
製造方法。(1) An anisotropic oxide superconductor thin film characterized by forming an oriented oxide insulating film on a substrate using a thin film forming apparatus and further forming an oxide superconductor thin film thereon. Production method.
ＣａＯもしくはＢａＯの立方晶系、またはＺｎＯ、Ｎｄ
＿２Ｏ＿３、Ｃｒ＿２Ｏ＿３もしくはＢａＯの六方晶系
であることを特徴とする特許請求の範囲第１項記載の異
方性酸化物超電導体薄膜の製造方法。(2) The oriented oxide insulating film is NiO, SrO, MgO,
Cubic system of CaO or BaO, or ZnO, Nd
2. The method for producing an anisotropic oxide superconductor thin film according to claim 1, wherein the anisotropic oxide superconductor thin film has a hexagonal system of _2O_3, Cr_2O_3, or BaO.
よるものであることを特徴とする特許請求の範囲第１項
または第２項記載の異方性酸化物超電導体薄膜の製造方
法。(3) A method for producing an anisotropic oxide superconductor thin film according to claim 1 or 2, characterized in that the thin film forming apparatus employs sputtering or vacuum evaporation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62257843A JPH0199268A (en) | 1987-10-13 | 1987-10-13 | Method for manufacturing anisotropic oxide superconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62257843A JPH0199268A (en) | 1987-10-13 | 1987-10-13 | Method for manufacturing anisotropic oxide superconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0199268A true JPH0199268A (en) | 1989-04-18 |
Family
ID=17311917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62257843A Pending JPH0199268A (en) | 1987-10-13 | 1987-10-13 | Method for manufacturing anisotropic oxide superconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0199268A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01144519A (en) * | 1987-11-30 | 1989-06-06 | Kyocera Corp | Oxide-based covering member for superconductor |
| JPH05145123A (en) * | 1991-11-25 | 1993-06-11 | Matsushita Electric Ind Co Ltd | Ferroelectric thin film structure and manufacturing method thereof |
| WO1999025908A1 (en) * | 1997-11-13 | 1999-05-27 | The Board Of Trustees Of The Leland Stanford Junior University | Thin films having a rock-salt-like structure deposited on amorphous surfaces |
| JP2009263730A (en) * | 2008-04-25 | 2009-11-12 | Fujikura Ltd | Manufacturing method of polycrystalline thin film, polycrystalline thin film, and oxide superconducting conductor |
-
1987
- 1987-10-13 JP JP62257843A patent/JPH0199268A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01144519A (en) * | 1987-11-30 | 1989-06-06 | Kyocera Corp | Oxide-based covering member for superconductor |
| JPH05145123A (en) * | 1991-11-25 | 1993-06-11 | Matsushita Electric Ind Co Ltd | Ferroelectric thin film structure and manufacturing method thereof |
| WO1999025908A1 (en) * | 1997-11-13 | 1999-05-27 | The Board Of Trustees Of The Leland Stanford Junior University | Thin films having a rock-salt-like structure deposited on amorphous surfaces |
| US6190752B1 (en) | 1997-11-13 | 2001-02-20 | Board Of Trustees Of The Leland Stanford Junior University | Thin films having rock-salt-like structure deposited on amorphous surfaces |
| JP2009263730A (en) * | 2008-04-25 | 2009-11-12 | Fujikura Ltd | Manufacturing method of polycrystalline thin film, polycrystalline thin film, and oxide superconducting conductor |
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