JPH02102723U - - Google Patents
Info
- Publication number
- JPH02102723U JPH02102723U JP1182989U JP1182989U JPH02102723U JP H02102723 U JPH02102723 U JP H02102723U JP 1182989 U JP1182989 U JP 1182989U JP 1182989 U JP1182989 U JP 1182989U JP H02102723 U JPH02102723 U JP H02102723U
- Authority
- JP
- Japan
- Prior art keywords
- edge
- partition wall
- exchange chamber
- substrate exchange
- seal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005192 partition Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000001947 vapour-phase growth Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims 4
- 238000000638 solvent extraction Methods 0.000 claims 4
- 230000002093 peripheral effect Effects 0.000 claims 2
- 230000007423 decrease Effects 0.000 claims 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案の第１実施例を示す縦型気相成
長装置の要部縦断面図、第２図は同じく第２実施
例を示す要部の拡大縦断面図、第３図及び第４図
は本考案の第３実施例を示すもので、第３図は縦
型気相成長装置の要部縦断面図、第４図は同じく
要部の拡大縦断面図、第５図は本考案の第４実施
例を示す要部の拡大縦断面図、第６図は従来の縦
型気相成長装置を示す縦断面図である。
２……気相成長室、３……基板交換室、３ａ，
１６，２２，２７……仕切壁、１１，１５，２０
，２５……蓋部材、１２，１７，２１，２６……
シール縁、１３，１９，２４，２９……シールリ
ング、１８，２３，２８……垂下縁、２１ａ，２
３ａ，２６ａ，２８ａ……斜面部。
FIG. 1 is a longitudinal cross-sectional view of the main parts of a vertical vapor phase growth apparatus showing the first embodiment of the present invention, FIG. 2 is an enlarged longitudinal cross-sectional view of the main parts similarly showing the second embodiment, and FIGS. Figure 4 shows a third embodiment of the present invention, in which Figure 3 is a vertical cross-sectional view of the main part of a vertical vapor phase growth apparatus, Figure 4 is an enlarged vertical cross-sectional view of the main part, and Figure 5 is the main part of the vertical vapor growth apparatus. FIG. 6 is an enlarged vertical cross-sectional view of the main parts showing the fourth embodiment of the invention, and FIG. 6 is a vertical cross-sectional view showing a conventional vertical vapor phase growth apparatus. 2... Vapor phase growth chamber, 3... Substrate exchange room, 3a,
16, 22, 27...Partition wall, 11, 15, 20
, 25... Lid member, 12, 17, 21, 26...
Seal edge, 13, 19, 24, 29... Seal ring, 18, 23, 28... Hanging edge, 21a, 2
3a, 26a, 28a... slope portions.
Claims (1)
基板交換室内に、該基板交換室上面の仕切壁に当
接して、前記両室を開閉可能に仕切る蓋部材を昇
降可能に備えた縦型気相成長装置において、前記
蓋部材の外周部に、前記仕切壁方向に突出するシ
ール縁を突設するとともに、該シール縁と前記仕
切壁との当接面の少なくともいずれか一方にシー
ルリングを設けたことを特徴とする縦型気相成長
装置。 ２ 気相成長室の下部に基板交換室を連設し、該
基板交換室内に、該基板交換室上面の仕切壁に当
接して、前記両室を開閉可能に仕切る蓋部材を昇
降可能に備えた縦型気相成長装置において、前記
蓋部材の外周部に、前記仕切壁方向に突出するシ
ール縁を突設するとともに、前記仕切壁に、前記
シール縁の内周側もしくは外周側に対応する垂下
縁を突設し、シール縁と垂下縁との摺接面の少な
くともいずれか一方にシールリングを設けたこと
を特徴とする縦型気相成長装置。 ３ 前記蓋部材のシール縁の摺接面を、内周面が
上方に拡径する斜面部、もしくは外周面が上方に
縮径する斜面部とし、かつ該斜面部からなるシー
ル縁の摺接面に対応する前記仕切壁の垂下縁の外
周面もしくは内周面を、前記シール縁の摺接面に
対応して下方が縮径もしくは拡径する斜面部とし
たことを特徴とする請求項２記載の縦型気相成長
装置。[Claims for Utility Model Registration] 1. A substrate exchange chamber is provided in the lower part of the vapor growth chamber, and the substrate exchange chamber is in contact with a partition wall on the upper surface of the substrate exchange chamber so that both chambers can be opened and closed. In a vertical vapor growth apparatus including a partitioning lid member that is movable up and down, a sealing edge protruding in the direction of the partitioning wall is provided on the outer periphery of the lidding member, and the sealing edge and the partitioning wall are in contact with each other. A vertical vapor phase growth apparatus characterized in that a seal ring is provided on at least one of the contact surfaces. 2. A substrate exchange chamber is connected to the lower part of the vapor growth chamber, and a lid member is provided in the substrate exchange chamber so as to be movable up and down, abutting against a partition wall on the upper surface of the substrate exchange chamber and partitioning the two chambers in an openable and closable manner. In the vertical vapor growth apparatus, a seal edge protruding in the direction of the partition wall is provided on the outer periphery of the lid member, and a seal edge is provided on the partition wall corresponding to the inner circumference side or the outer circumference side of the seal edge. A vertical vapor phase growth apparatus characterized in that a hanging edge is provided protrudingly, and a seal ring is provided on at least one of the sliding surfaces of the sealing edge and the hanging edge. 3. The sliding contact surface of the seal edge of the lid member is a slope portion where the inner peripheral surface expands in diameter upward, or a slope portion where the outer peripheral surface contracts in diameter upward, and the sliding surface of the seal edge consisting of the slope portion. 3. The outer circumferential surface or inner circumferential surface of the hanging edge of the partition wall corresponding to the partition wall is a sloped portion whose diameter decreases or expands downward in correspondence with the sliding surface of the sealing edge. Vertical vapor phase growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989011829U JPH071789Y2 (en) | 1989-02-03 | 1989-02-03 | Vertical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989011829U JPH071789Y2 (en) | 1989-02-03 | 1989-02-03 | Vertical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02102723U true JPH02102723U (en) | 1990-08-15 |
| JPH071789Y2 JPH071789Y2 (en) | 1995-01-18 |
Family
ID=31220726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989011829U Expired - Fee Related JPH071789Y2 (en) | 1989-02-03 | 1989-02-03 | Vertical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH071789Y2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016039174A (en) * | 2014-08-05 | 2016-03-22 | 住友化学株式会社 | Reaction vessel sealing structure and substrate processing apparatus |
| JP2017197779A (en) * | 2016-04-25 | 2017-11-02 | トヨタ自動車株式会社 | Film forming apparatus and film forming method |
| CN107326340A (en) * | 2017-08-29 | 2017-11-07 | 京东方科技集团股份有限公司 | Film-forming apparatus |
| US11251019B2 (en) | 2016-12-15 | 2022-02-15 | Toyota Jidosha Kabushiki Kaisha | Plasma device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63190327A (en) * | 1987-02-03 | 1988-08-05 | Toshiba Corp | Vapor growth device |
-
1989
- 1989-02-03 JP JP1989011829U patent/JPH071789Y2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63190327A (en) * | 1987-02-03 | 1988-08-05 | Toshiba Corp | Vapor growth device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016039174A (en) * | 2014-08-05 | 2016-03-22 | 住友化学株式会社 | Reaction vessel sealing structure and substrate processing apparatus |
| JP2017197779A (en) * | 2016-04-25 | 2017-11-02 | トヨタ自動車株式会社 | Film forming apparatus and film forming method |
| US10385455B2 (en) | 2016-04-25 | 2019-08-20 | Toyota Jidosha Kabushiki Kaisha | Film forming apparatus and film forming method |
| US11251019B2 (en) | 2016-12-15 | 2022-02-15 | Toyota Jidosha Kabushiki Kaisha | Plasma device |
| CN107326340A (en) * | 2017-08-29 | 2017-11-07 | 京东方科技集团股份有限公司 | Film-forming apparatus |
| CN107326340B (en) * | 2017-08-29 | 2023-06-13 | 京东方科技集团股份有限公司 | Film forming apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH071789Y2 (en) | 1995-01-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |