JPH02102747U - - Google Patents
Info
- Publication number
- JPH02102747U JPH02102747U JP1120089U JP1120089U JPH02102747U JP H02102747 U JPH02102747 U JP H02102747U JP 1120089 U JP1120089 U JP 1120089U JP 1120089 U JP1120089 U JP 1120089U JP H02102747 U JPH02102747 U JP H02102747U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- laminates
- conductive film
- transparent conductive
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 1
Description
第１図は本考案に係る光電変換装置の構造を示
す断面図である。第２図は第１図に示した光電変
換装置の等価的な電気回路図である。第３図ａ，
ｂは本考案の光電変換装置を構成する積層体ａ，
ｂの電圧―電流特性図であり、第３図ｃは、非晶
質シリコン半導体層を介在させない場合の遮光体
を有する積層体の電圧―電流特性図である。第４
図は本考案の光電変換装置の他の実施例を示す断
面図である。第５図は従来の光電変換装置を示す
断面図である。第６図は第５図に示した光電変換
装置の等価的な電気回路図である。
１……透明基板、２……透明導電膜、３……非
晶質半導体層、４ａ，４ｂ……金属電極、５……
遮光層、６……抵抗成分、７……Ｉ型非晶質シリ
コン半導体層。
FIG. 1 is a sectional view showing the structure of a photoelectric conversion device according to the present invention. FIG. 2 is an equivalent electrical circuit diagram of the photoelectric conversion device shown in FIG. 1. Figure 3a,
b is a laminate a constituting the photoelectric conversion device of the present invention;
FIG. 3b is a voltage-current characteristic diagram, and FIG. 3c is a voltage-current characteristic diagram of a laminate having a light shielding body without an intervening amorphous silicon semiconductor layer. Fourth
The figure is a sectional view showing another embodiment of the photoelectric conversion device of the present invention. FIG. 5 is a sectional view showing a conventional photoelectric conversion device. FIG. 6 is an equivalent electrical circuit diagram of the photoelectric conversion device shown in FIG. 5. DESCRIPTION OF SYMBOLS 1... Transparent substrate, 2... Transparent conductive film, 3... Amorphous semiconductor layer, 4a, 4b... Metal electrode, 5...
Light-shielding layer, 6... Resistance component, 7... I-type amorphous silicon semiconductor layer.
Claims (1)
Ｎ接合した非晶質半導体層と金属電極とを重畳し
て成る２つの積層体を形成し、該透明導電膜を介
して接合方向を互いに逆向きに接続し、一方の積
層体に遮光体を形成するとともに、前記透明導電
膜と一方の積層体の金属電極間に、一定バイアス
電圧を印加する電源及びバイパス抵抗成分を設け
た光電変換装置において、 前記透明導電膜とＰ―Ｉ―Ｎ接合した非晶質半
導体層との間にＩ型非晶質シリコン半導体層を介
在させたことを特徴とする光電変換装置。[Scope of claim for utility model registration] P-I-
Two laminates are formed by overlapping an N-junctioned amorphous semiconductor layer and a metal electrode, and the bonding directions are connected in opposite directions to each other via the transparent conductive film, and a light shield is provided on one of the laminates. In a photoelectric conversion device, which is provided with a power supply for applying a constant bias voltage and a bypass resistance component between the transparent conductive film and the metal electrode of one of the laminates, a P-I-N junction is formed with the transparent conductive film. A photoelectric conversion device characterized in that an I-type amorphous silicon semiconductor layer is interposed between an amorphous semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1120089U JPH0729649Y2 (en) | 1989-01-31 | 1989-01-31 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1120089U JPH0729649Y2 (en) | 1989-01-31 | 1989-01-31 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02102747U true JPH02102747U (en) | 1990-08-15 |
| JPH0729649Y2 JPH0729649Y2 (en) | 1995-07-05 |
Family
ID=31219543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1120089U Expired - Lifetime JPH0729649Y2 (en) | 1989-01-31 | 1989-01-31 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0729649Y2 (en) |
-
1989
- 1989-01-31 JP JP1120089U patent/JPH0729649Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0729649Y2 (en) | 1995-07-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |