JPH0210375B2 - - Google Patents

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Publication number
JPH0210375B2
JPH0210375B2 JP60048385A JP4838585A JPH0210375B2 JP H0210375 B2 JPH0210375 B2 JP H0210375B2 JP 60048385 A JP60048385 A JP 60048385A JP 4838585 A JP4838585 A JP 4838585A JP H0210375 B2 JPH0210375 B2 JP H0210375B2
Authority
JP
Japan
Prior art keywords
hydrogen
waveguide
light
substrate
light absorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60048385A
Other languages
Japanese (ja)
Other versions
JPS61207950A (en
Inventor
Eiji Sudo
Eiji Okuda
Hiroshi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60048385A priority Critical patent/JPS61207950A/en
Publication of JPS61207950A publication Critical patent/JPS61207950A/en
Publication of JPH0210375B2 publication Critical patent/JPH0210375B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/7703Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は石油精製プラント等において有用な水
素を光学的に検出するセンサーに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sensor for optically detecting hydrogen useful in oil refining plants and the like.

〔従来技術の説明〕[Description of prior art]

水素を検出するセンサーとして従来、第5図に
示すように絶縁体基板100上にSnO2やZnOな
どの酸化物半導体層101およびこの半導体層1
01上に間隔をおいて対向させた一対の電極10
2A,102Bを設け、裏面側に加熱用ヒーター
103と加熱用電極104を配した半導体センサ
ー105が知られている。
Conventionally, as a sensor for detecting hydrogen, as shown in FIG.
A pair of electrodes 10 facing each other with an interval on 01
A semiconductor sensor 105 is known in which sensors 2A and 102B are provided, and a heating heater 103 and a heating electrode 104 are arranged on the back side.

上記の半導体センサー105において、半導体
層101に水素ガスが化学吸着されると、水素ガ
スと半導体の間で一般に電子の授受が行なわれ、
その結果半導体層101の表面からある厚み範囲
にわたつてキヤリア濃度が増加し、半導体層10
1の電気抵抗が減少して電極102A,102B
に流れる電流が増加する。また反応速度を上げる
ために、基板裏面のヒーター103に通電して基
板100を高温度に保持する。
In the semiconductor sensor 105 described above, when hydrogen gas is chemically adsorbed on the semiconductor layer 101, electrons are generally exchanged between the hydrogen gas and the semiconductor.
As a result, the carrier concentration increases over a certain thickness range from the surface of the semiconductor layer 101.
The electrical resistance of electrodes 102A and 102B decreases.
The current flowing through increases. Further, in order to increase the reaction speed, electricity is supplied to the heater 103 on the back surface of the substrate to maintain the substrate 100 at a high temperature.

上記の構造のほか、金属ゲートと半導体接合の
整流作用や、MOSFETのゲート作用を水素ガス
検知に利用したものも知られている。
In addition to the above structure, there are also known structures that utilize the rectifying effect of a metal gate and semiconductor junction or the gate effect of a MOSFET for hydrogen gas detection.

この場合は、金属と半導体の間の電子エネルギ
ー準位差が水素ガスの吸着によつて変わることで
水素ガス濃度を測定している。
In this case, the hydrogen gas concentration is measured by changing the electron energy level difference between the metal and the semiconductor due to the adsorption of hydrogen gas.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の酸化物半導体を用いた水素ガス
検知センサーは、常温下では反応速度が遅いた
め、通常350℃程度に加熱して使用しなければな
らず、加熱用ヒーターの組み込みを必要する。
The conventional hydrogen gas detection sensor using an oxide semiconductor described above has a slow reaction rate at room temperature, so it must be heated to about 350°C before use, and a heating heater must be installed.

またセンサー表面の酸化や劣化、結晶粒成長や
析出が生じ、経時変化で比較的早期に検出性能が
低下する問題がある。また、水素ガスのように可
燃性、爆発性のあるガスに対しては、センサー部
からの配線を防爆化する特別の工事をしなければ
ならない。さらに、水素ガスに対する選択性も悪
く、信頼性の高い水素ガス検知センサーは未だ実
用化されていない状況にある。
There is also the problem that oxidation and deterioration, crystal grain growth, and precipitation occur on the sensor surface, and the detection performance deteriorates relatively quickly due to changes over time. Additionally, for flammable and explosive gases such as hydrogen gas, special construction must be done to make the wiring from the sensor part explosion-proof. Furthermore, the selectivity for hydrogen gas is poor, and a highly reliable hydrogen gas detection sensor has not yet been put into practical use.

〔問題点を解決するための手段〕[Means for solving problems]

基板中に光導波路を設け、この光導波路の基板
側縁に露出する端面または導波路中間部に横断切
り込みを入れて形成した分断端面に、解離水素と
反応して光吸収係数が変化する物質、例えば酸化
タングステン(WO3)から成る光吸収層と、こ
の層上に積層して、水素を吸着解離する物質、例
えばパラジウム(Pd)から成る水素吸収層とを
設けてセンサーを構成する。
An optical waveguide is provided in the substrate, and a substance that reacts with dissociated hydrogen to change the optical absorption coefficient is applied to the end face of the optical waveguide exposed to the side edge of the substrate or the divided end face formed by making a transverse cut in the middle part of the waveguide. A sensor is constructed by providing a light absorption layer made of, for example, tungsten oxide (WO 3 ), and a hydrogen absorption layer made of a substance that adsorbs and dissociates hydrogen, such as palladium (Pd), which is laminated on this layer.

〔作用〕[Effect]

上記構造のセンサーにおいて、表面の吸着層に
水素ガスが吸着すると解離されて電子およびプロ
トンが発生して上記層下にある光吸収層に侵入
し、この結果光吸収層の光吸収係数が変化するの
で、導波路で伝送された後これら層を通過して出
射する光量が変化する。したがつて、導波路の一
端側から光を入射させ、導波路他端から出射する
光の光量を測定すれば、受光量の変化量から上記
センサー付近に存在する水素ガスの濃度を検出す
ることができる。
In a sensor with the above structure, when hydrogen gas is adsorbed on the adsorption layer on the surface, it dissociates and generates electrons and protons, which enter the light absorption layer below the above layer, resulting in a change in the light absorption coefficient of the light absorption layer. Therefore, the amount of light that is transmitted through the waveguide, passes through these layers, and is emitted changes. Therefore, by inputting light from one end of the waveguide and measuring the amount of light emitted from the other end of the waveguide, the concentration of hydrogen gas present near the sensor can be detected from the amount of change in the amount of received light. Can be done.

〔実施例〕〔Example〕

以下本発明を図面に示した実施例に基づいて詳
細に説明する。
The present invention will be described in detail below based on embodiments shown in the drawings.

第1図、第2図において1は使用波長に対して
透明なガラス、プラスチツク等から成る基板であ
り、この基板1中に光導波路2が埋め込み形成し
てある。
In FIGS. 1 and 2, reference numeral 1 denotes a substrate made of glass, plastic, etc. that is transparent to the wavelength used, and an optical waveguide 2 is embedded in this substrate 1.

光導波路2は、これに接続されるフアイバーの
コア径と略同一径の断面円形で、屈折率が中心軸
上で最大で周辺に向けてパラボリツクに漸減する
屈折率分布をもつている。このような屈折率勾配
型の断面円形光導波路は、例えばガラス基板1の
片面に導波路パターンの開口を残してマスキング
を施し、マスキング開口を通して、タリウム
(Tl)、リチウム(Li)等のガラスの屈折率増加
に寄与の大きいイオンを基板内に拡散させ、マス
キングを除去した後カリウム(K)、ナトリウム
(Na)等のガラスの屈折率減少に寄与の大きいイ
オンを基板内に拡散させることによつて形成する
ことができる。
The optical waveguide 2 has a circular cross section with approximately the same diameter as the core diameter of the fiber connected thereto, and has a refractive index distribution in which the refractive index is maximum on the central axis and gradually decreases parabolically toward the periphery. Such a refractive index gradient type optical waveguide with a circular cross section is produced by, for example, masking a glass substrate 1 by leaving an opening in the waveguide pattern on one side, and passing a glass material such as thallium (Tl) or lithium (Li) through the masking opening. By diffusing ions that make a large contribution to increasing the refractive index into the substrate, and after removing the masking, ions that make a large contribution to reducing the refractive index of glass, such as potassium (K) and sodium (Na), diffuse into the substrate. It can be formed by

上記のような光導波路2を埋め込み形成した基
板1に、上記導波路2を中間箇所で分断する如
く、導波路の光軸に直交する方向に延びる微小幅
の切込み溝3が設けてある。この溝3は基板表面
から導波路2の下端よりも下方まで切り込んであ
る。そして、光導波路2の分断端面2Cが露出し
ている溝3の一方の側壁3A上に、解離水素と反
応して光吸収係数が変化する物質の薄膜からなる
光吸収層4が設けてあり、さらにこの光吸収層4
上に積層して、水素を吸着解離する物質の薄膜か
らなる水素吸着層5が設けてある。つまり光導波
路2の一方の分断端面2Cが上記両層4,5で被
覆されている。
A substrate 1 in which the optical waveguide 2 as described above is embedded is provided with a cut groove 3 having a minute width and extending in a direction perpendicular to the optical axis of the waveguide so as to divide the waveguide 2 at an intermediate point. This groove 3 is cut from the substrate surface to below the lower end of the waveguide 2. A light absorption layer 4 made of a thin film of a substance whose light absorption coefficient changes by reacting with dissociated hydrogen is provided on one side wall 3A of the groove 3 where the divided end surface 2C of the optical waveguide 2 is exposed. Furthermore, this light absorption layer 4
A hydrogen adsorption layer 5 made of a thin film of a substance that adsorbs and dissociates hydrogen is laminated thereon. That is, one divided end surface 2C of the optical waveguide 2 is covered with both the layers 4 and 5.

上記の水素吸着層5の材質としてはパラジウム
あるいは白金が好適である。また光吸収層4とし
てはWO3が好適であり、その他一般にエレクト
ロクロミツクを示す無機材料、例えばMoO3
V2O5,TiO2,Ir(OH)n,Rh2O3・xH2Oなど
が使用可能である。
The material for the hydrogen adsorption layer 5 is preferably palladium or platinum. In addition, WO 3 is suitable for the light absorption layer 4, and other inorganic materials that generally exhibit electrochromic properties, such as MoO 3 ,
V 2 O 5 , TiO 2 , Ir(OH)n, Rh 2 O 3 xH 2 O, etc. can be used.

また光吸収層4は有機材料で構成してもよく、
例えばヘプエルビオロゲン、シアノフエニールビ
オロゲン、コバルトピリジル錯体、ポリマー化テ
トラチオフルバレン(TTF)、ルテシウムジフタ
ロシアニンなどが使用できる。
Further, the light absorption layer 4 may be composed of an organic material,
For example, hepuel viologen, cyanophenyl viologen, cobalt pyridyl complex, polymerized tetrathiofulvalene (TTF), lutetium diphthalocyanine, etc. can be used.

上記のセンサーの導波路2の一端に光フアイバ
ー6Aを接続するとともにフアイバー6Aの他端
を光源7に接続し、また導波路2の他端にも光フ
アイバー6Bを接続するとともにその他端をフオ
トダイオード等の光検出器8に接続して受光量を
測定する。上記構造のセンサー10の例えばPd
膜からなる吸着層5に水素ガスが接触するとPd
膜5の水素還元作用によつて電子、プロトンが発
生し、これらが例えばWO3から成る光吸収層4
に注入されて下記の反応を生じる。
An optical fiber 6A is connected to one end of the waveguide 2 of the sensor, and the other end of the fiber 6A is connected to a light source 7. An optical fiber 6B is also connected to the other end of the waveguide 2, and the other end is connected to a photodiode. The amount of received light is measured by connecting it to a photodetector 8 such as the following. For example, in the sensor 10 having the above structure, Pd
When hydrogen gas comes into contact with the adsorption layer 5 consisting of a membrane, Pd
Electrons and protons are generated by the hydrogen reduction action of the film 5, and these are absorbed into the light absorption layer 4 made of, for example, WO3 .
The following reaction occurs.

WO3+xH++xe-→HxWO3 (1) 上記反応が進行するとWO3の光吸収層4が着
色して光吸収係数が増加する。(1)式左辺のプロト
ンと電子を与えるのがPd膜5による水素ガスの
還元作用であり、光吸収係数の増加はプロトンの
密度、言い換えれば吸着された水素ガス濃度に比
例することになる。
WO 3 +xH + +xe →HxWO 3 (1) As the above reaction progresses, the light absorption layer 4 of WO 3 is colored and the light absorption coefficient increases. It is the reduction action of hydrogen gas by the Pd film 5 that provides the protons and electrons on the left side of equation (1), and the increase in the light absorption coefficient is proportional to the density of protons, in other words, the concentration of adsorbed hydrogen gas.

この結果、光導波路2の分断された一方の光路
21を通つてきた光が溝3の箇所で他方の分断光
路22に入射する際に、吸収層4で吸収を受け減
衰して導波路2からの出射光量が減少するので、
この受光量の変化量を測定すれば、予め既知の水
素ガス濃度と受光量との関係を測定して作成した
検量線から水素ガス濃度を知ることができる。
As a result, when the light that has passed through one of the divided optical paths 21 of the optical waveguide 2 enters the other divided optical path 22 at the groove 3, it is absorbed and attenuated by the absorption layer 4, and the light exits the waveguide 2. Since the amount of light emitted by the
By measuring the amount of change in the amount of received light, the hydrogen gas concentration can be determined from a calibration curve created by measuring the relationship between the known hydrogen gas concentration and the amount of received light.

上記の図示例では光吸収層4および吸着層5
は、溝3の一方の側壁3Aのみに設けたが、対向
する両側壁3A,3B上に設けてもよい。また、
光吸収層4と吸着層5を設けた溝3は1ヶ所のみ
でなく、導波路2の光軸方向に間隔をおいて複数
箇所に設けてもよい。溝3の側壁3A上に光吸収
層4および吸着層5を形成するに当つては第3図
に示すように、蒸着源9に対して、基板1の溝3
の開口側を対向させるとともに、基板1を傾斜保
持して蒸着を行なうのが好適である。
In the illustrated example above, the light absorption layer 4 and the adsorption layer 5
is provided only on one side wall 3A of the groove 3, but may be provided on opposing both side walls 3A and 3B. Also,
The groove 3 in which the light absorption layer 4 and the adsorption layer 5 are provided is not limited to one location, but may be provided at multiple locations at intervals in the optical axis direction of the waveguide 2. When forming the light absorption layer 4 and adsorption layer 5 on the side wall 3A of the groove 3, as shown in FIG.
It is preferable to perform vapor deposition with the opening sides of the substrates facing each other and the substrate 1 held at an angle.

次に具体的な数値例を示す。 Next, a specific numerical example is shown.

まず、前述したイオン交換法によつてガラス基
板内の表面直下に、断面が円形で直径約50μmの
屈折率勾配をもつた光導波路を形成した後、この
光導波路を横断して幅が20μmで深さが導波路下
端よりも深い溝をダイシングソーで切り込み形成
した。そして、導波路の分断端面が露出している
上記溝の一方の側壁面に、光吸収層4として
WO3膜を1μmの厚さに真空蒸着した。
First, an optical waveguide with a circular cross section and a refractive index gradient of about 50 μm in diameter is formed just below the surface of the glass substrate by the ion exchange method described above, and then a waveguide with a width of 20 μm is formed across this optical waveguide. A groove with a depth deeper than the lower end of the waveguide was cut using a dicing saw. Then, a light absorption layer 4 is formed on one side wall surface of the groove where the divided end surface of the waveguide is exposed.
A WO 3 film was vacuum deposited to a thickness of 1 μm.

WO3は純度99.99%のペレツトをアルミナでコ
ートされたW線ルツボを用いて抵抗加熱蒸着す
る。蒸着条件は、酸素圧力1×10-4Torr、イオ
ン化用高周波電力200W、イオン加速電圧−500V
とした。蒸着時の基板温度は300℃であり、得ら
れたWO3薄膜は多結晶になつており無色透明で
あつた。さらにこのWO3膜上に水素吸着層5と
してPdを100Åの厚さに電子線加熱蒸着法で付着
させた。上記のようにして作製したセンサーに入
力用光フアイバーおよび出力用光フアイバーを接
続し、センサーを検出すべき雰囲気中に設置し、
入力用フアイバーからLED光(波長1.3μm)を入
力し、出力側には光検出器を設置して出力光量を
測定した結果、10〜2000ppmの水素ガス濃度範囲
を±5%の精度で測定することができた。
WO 3 is produced by resistance heating vapor deposition of pellets with a purity of 99.99% using a W-wire crucible coated with alumina. The deposition conditions were: oxygen pressure 1×10 -4 Torr, high frequency power for ionization 200W, and ion acceleration voltage −500V.
And so. The substrate temperature during vapor deposition was 300°C, and the obtained WO 3 thin film was polycrystalline and colorless and transparent. Furthermore, Pd was deposited as a hydrogen adsorption layer 5 on this WO 3 film to a thickness of 100 Å by electron beam heating evaporation. An input optical fiber and an output optical fiber are connected to the sensor prepared as described above, and the sensor is installed in the atmosphere to be detected.
LED light (wavelength 1.3 μm) is input from the input fiber, and a photodetector is installed on the output side to measure the output light amount. As a result, the hydrogen gas concentration range of 10 to 2000 ppm can be measured with an accuracy of ±5%. I was able to do that.

上記実施例ではイオン交換法によつて光導波路
を形成しているが、これ以外にCVD法で導波路
を形成した石英ガラスやチタン熱拡散したニオブ
酸リチウムやタンタル酸リチウム、さらにはプラ
スチツク材であつてもよい。また光導波路2は、
第4図に示すように基板1に設けたフアイバー固
定溝12に光フアイバー6を埋め込み接着固定し
て形成してもよい。さらに、光吸収層4および吸
着層5は、上述実施例のように光導波路2を中間
で分断する溝内に設ける以外に、基板側縁に露出
する導波路端面2A,2Bの一方または両方を覆
うように設けて上記分断溝を省略することもでき
る。
In the above example, the optical waveguide is formed by the ion exchange method, but other materials include quartz glass formed by the CVD method, lithium niobate or lithium tantalate in which titanium is thermally diffused, and even plastic materials. It may be hot. Moreover, the optical waveguide 2 is
As shown in FIG. 4, the optical fiber 6 may be embedded and adhesively fixed in a fiber fixing groove 12 provided in the substrate 1. Furthermore, in addition to providing the light absorption layer 4 and the adsorption layer 5 in the groove that divides the optical waveguide 2 in the middle as in the above-described embodiment, the light absorption layer 4 and the adsorption layer 5 are provided in one or both of the waveguide end faces 2A and 2B exposed at the side edge of the substrate. It is also possible to omit the above-mentioned dividing groove by providing it so as to cover it.

〔効果〕〔effect〕

本発明によれば、水素ガスをすべて光の信号だ
けで検知できるだけでなく、小型化、高信頼化、
耐熱、耐電磁誘導、耐火、防爆など光のもつすべ
ての利点を生かすことができる。石油精製などの
プラントでは、石油製品の改質に水素ガスを多用
しており、安全で高信頼性をもつリモートセンシ
ングの要求が高い。しかも光フアイバーによるロ
ーカルループが計測システムの中にも導入されて
きており、信号伝送という意味では情報も測定デ
ータも同等に扱われる傾向にある。したがつて光
信号を電気信号に変換することなく、光だけでセ
ンシングできる技術は上述の光フアイバーカルル
ープとの整合性も極めてよい。
According to the present invention, not only can all hydrogen gas be detected using only optical signals, but it is also smaller, more reliable, and more reliable.
You can take advantage of all the advantages of light, such as heat resistance, electromagnetic induction resistance, fire resistance, and explosion resistance. Oil refining plants and other plants use hydrogen gas extensively to reform petroleum products, and there is a high demand for safe and highly reliable remote sensing. Furthermore, local loops using optical fibers have been introduced into measurement systems, and in the sense of signal transmission, there is a tendency for information and measurement data to be treated equally. Therefore, a technology that allows sensing using only light without converting optical signals into electrical signals is extremely compatible with the above-mentioned optical fiber loop.

また本発明によれば、1枚の大型基板に多数の
埋込み型導波路を作製しておけば集積回路と同様
の製作工程で多数の水素検知光センサーチツプを
効率良く製造でき量産性、経済性に優れている。
Furthermore, according to the present invention, by fabricating a large number of embedded waveguides on one large substrate, a large number of hydrogen detection optical sensor chips can be efficiently manufactured in the same manufacturing process as integrated circuits, resulting in mass production and economy. Excellent.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例を示す側断面図、第2
図は同平面図、第3図は第1図、第2図実施例で
溝内に光吸収層および水素吸着層を蒸着する方法
の一例を示す断面図、第4図は本発明の他の実施
例を示す平面図、第5図は従来の水素検知センサ
ーを示す斜視図である。 1……基板、2……光導波路、3……導波路分
断溝、4……光吸収層、5……水素吸着層、6,
6A,6B……光フアイバー、7……光源、8…
…光検出器、9……蒸着源、10……センサー。
FIG. 1 is a side sectional view showing an embodiment of the present invention, and FIG.
3 is a plan view of the same, FIG. 3 is a sectional view showing an example of the method of depositing a light absorption layer and a hydrogen adsorption layer in a groove in an embodiment of the present invention. FIG. FIG. 5 is a plan view showing an embodiment, and a perspective view showing a conventional hydrogen detection sensor. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Optical waveguide, 3... Waveguide dividing groove, 4... Light absorption layer, 5... Hydrogen adsorption layer, 6,
6A, 6B...Optical fiber, 7...Light source, 8...
...Photodetector, 9...Vapor deposition source, 10...Sensor.

Claims (1)

【特許請求の範囲】[Claims] 1 基板中に設けた光導波路の基板側縁に露出す
る光入出射端面または導波路中間部に横断切り込
みを入れて形成した分断端面に、解離水素と反応
して光吸収係数が変化する物質から成る光吸収層
と、この層上に積層して、水素を吸着解離する物
質からなる水素吸着層とを設けたことを特徴とす
る水素検知光センサー。
1. The light input/output end face exposed at the side edge of the substrate of the optical waveguide provided in the substrate or the divided end face formed by making a transverse cut in the middle part of the waveguide is made of a substance whose light absorption coefficient changes by reacting with dissociated hydrogen. What is claimed is: 1. A hydrogen-detecting optical sensor comprising: a light-absorbing layer made of a light-absorbing layer; and a hydrogen-adsorbing layer made of a substance that adsorbs and dissociates hydrogen, laminated on this layer.
JP60048385A 1985-03-13 1985-03-13 Optical sensor for detecting hydrogen Granted JPS61207950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60048385A JPS61207950A (en) 1985-03-13 1985-03-13 Optical sensor for detecting hydrogen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60048385A JPS61207950A (en) 1985-03-13 1985-03-13 Optical sensor for detecting hydrogen

Publications (2)

Publication Number Publication Date
JPS61207950A JPS61207950A (en) 1986-09-16
JPH0210375B2 true JPH0210375B2 (en) 1990-03-07

Family

ID=12801834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60048385A Granted JPS61207950A (en) 1985-03-13 1985-03-13 Optical sensor for detecting hydrogen

Country Status (1)

Country Link
JP (1) JPS61207950A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4834496A (en) * 1987-05-22 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Optical fiber sensors for chemical detection
JPH0197249U (en) * 1987-12-21 1989-06-28
JPH0786464B2 (en) * 1988-04-02 1995-09-20 同和鉱業株式会社 Alcohol concentration measurement method
DE4303858C2 (en) * 1993-02-10 1995-08-31 Draegerwerk Ag Device for the colorimetric detection of gaseous and / or vaporous components of a gas mixture due to the discoloration of a reaction zone arranged in a channel

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60209149A (en) * 1984-03-31 1985-10-21 Nippon Sheet Glass Co Ltd Hydrogen detector

Also Published As

Publication number Publication date
JPS61207950A (en) 1986-09-16

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