JPH02104659A - Thin film manufacturing equipment - Google Patents
Thin film manufacturing equipmentInfo
- Publication number
- JPH02104659A JPH02104659A JP63257572A JP25757288A JPH02104659A JP H02104659 A JPH02104659 A JP H02104659A JP 63257572 A JP63257572 A JP 63257572A JP 25757288 A JP25757288 A JP 25757288A JP H02104659 A JPH02104659 A JP H02104659A
- Authority
- JP
- Japan
- Prior art keywords
- evaporation crucible
- thin film
- substrate
- heat
- film manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、材料を溶融して蒸気を発生させ、基板に付着
させて薄膜を形成する薄膜の製造装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a thin film manufacturing apparatus for melting a material to generate steam and depositing the material on a substrate to form a thin film.
従来の技術
基板に薄膜を形成する方法としては従来、スパッタリン
グ法や真空蒸着法が用いられている。量産性を考慮する
と高い堆積速度が望まれので後者の方が適している。材
料を溶融する手段としては、抵抗加熱や電子銃(以下E
Bと記す)加熱があるが、高融点材料に適用できるEB
加熱が近年よく用いられている。Conventional Techniques Conventionally, sputtering methods and vacuum evaporation methods have been used to form thin films on substrates. Considering mass productivity, a high deposition rate is desired, so the latter is more suitable. Methods for melting materials include resistance heating and electron guns (hereinafter referred to as E).
EB) which involves heating but can be applied to high melting point materials
Heating has been frequently used in recent years.
第2図に従来の金属薄膜の造積装置における概略構造図
を示す。冷却器1によって冷却された設置ハース2にM
qO等の耐熱材料で形成された蒸発るつぼ3を設置し内
部に金属4を入れる。金属4をEBsによシ溶融させる
。溶融した金属4から発生した金属蒸気が基板6に堆積
して金属薄膜を形成する。7はマスク、8は真空槽壁で
ある。FIG. 2 shows a schematic structural diagram of a conventional metal thin film deposition apparatus. M in the installation hearth 2 cooled by the cooler 1
An evaporation crucible 3 made of a heat-resistant material such as qO is installed, and a metal 4 is placed inside. Metal 4 is melted by EBs. Metal vapor generated from the molten metal 4 is deposited on the substrate 6 to form a metal thin film. 7 is a mask, and 8 is a vacuum chamber wall.
発明が解決しようとする課題
しかしながら蒸発るつぼに投入されたEB大入力、例え
ば金属を蒸発させるのに用いられた熱量Q1、高温とな
った蒸発るつぼ溶湯表面からの輻射による熱量Q2、蒸
発るつぼ裏面から設置ハース2への損失熱量Q3に大別
すると、正味金属の蒸発に用いられた熱量Q1は、EB
大入力約2Q%であり有効に利用されていないのが現状
である。Problems to be Solved by the Invention However, the large EB input input into the evaporation crucible, for example, the amount of heat Q1 used to evaporate the metal, the amount of heat Q2 due to radiation from the surface of the hot molten metal in the evaporation crucible, and the amount of heat Q2 from the back side of the evaporation crucible. Roughly divided into the amount of heat lost to the installation hearth 2 Q3, the amount of heat Q1 used for net metal evaporation is EB
The current situation is that the large input is about 2Q% and is not being used effectively.
また蒸発るつぼ溶湯表面からの輻射熱Q2は、−部は直
接基板6を照射し、また他も周囲の真空槽8を照射し吸
収されて基板6へ再輻射する。あるいは真空槽8で反射
されて基板6を照射する。結果として基板6が受ける熱
は、金属蒸気の凝縮熱よりも蒸発源からの輻射熱の方が
大きく、基板の熱変形は輻射熱に起因するところが大き
い。また蒸発るつぼ裏面からの損失熱Q3も、熱伝導に
よるものだけでなく、微視的に見た場合輻射による損失
が大きい事がわかってきている。裏面からの熱損失が大
きいと、極端な場合、溶湯表面はEBが照射されている
部分のみ高温となり、周囲との温度差が大きく溶湯表面
温度分布は不均一となる6その結果溶湯表面温度に相当
する飽和蒸気圧分布が不均一となるので、湯面が変動し
溶融金属が飛翔する。飛翔した溶融金属(以下スプラッ
シュと記す)が基板6に付着し、金属薄膜の完成度が非
常に低下するという不具合が生じていた。Further, the radiant heat Q2 from the surface of the molten metal in the evaporation crucible directly irradiates the substrate 6 at the negative portion, and irradiates the surrounding vacuum chamber 8 at the other portion, is absorbed, and re-radiates to the substrate 6. Alternatively, the light is reflected by the vacuum chamber 8 and irradiates the substrate 6. As a result, the heat received by the substrate 6 is greater from the radiant heat from the evaporation source than from the condensation heat of the metal vapor, and thermal deformation of the substrate is largely due to the radiant heat. It has also been found that the loss of heat Q3 from the back surface of the evaporation crucible is not only due to heat conduction, but also due to radiation when viewed microscopically. If the heat loss from the back side is large, in extreme cases, only the part of the molten metal surface that is irradiated with EB will be at a high temperature, and the temperature difference with the surrounding area will be large and the molten metal surface temperature distribution will be uneven6.As a result, the molten metal surface temperature will change. Since the corresponding saturated vapor pressure distribution becomes non-uniform, the molten metal level fluctuates and molten metal flies. A problem occurred in that the flying molten metal (hereinafter referred to as "splash") adhered to the substrate 6, and the degree of completion of the metal thin film was extremely reduced.
本発明はこのような従来技術の課題を解決する、 こ
とを目的とする。An object of the present invention is to solve the problems of the prior art.
課題を解決するための手段
本発明は設置ハースに支持された材料を溶融しその材料
の蒸気を発生させる蒸発るつぼと、基板と、蒸発るつぼ
からの輻射熱を減少させる手段を備えたものである。SUMMARY OF THE INVENTION The present invention includes an evaporation crucible for melting material supported on an installation hearth to generate vapor of the material, a substrate, and means for reducing radiant heat from the evaporation crucible.
輻射熱を減少させる一手段として、蒸発るつぼと基板の
間に蒸発るつぼに対して凹となる低放射率材料壁を設け
る。One means of reducing radiant heat is to provide a wall of low emissivity material between the evaporation crucible and the substrate that is concave with respect to the evaporation crucible.
あるいは輻射熱を減少させる手段として、蒸発るつぼを
低放射率材料容器に収納し設置ハースとの間に間隙を設
けるものである。Alternatively, as a means to reduce radiant heat, the evaporation crucible is housed in a container made of a low emissivity material and a gap is provided between it and the installation hearth.
作 用
上記手段により本発明は次のように作用するものである
。蒸発るつぼ溶湯表面からの輻射熱が減少する事で基板
の熱変形が防止できる。また蒸発るつぼ裏面からの輻射
熱が減少する事で、蒸発るつぼ裏面からの熱損失が減少
し断熱効果が向上する。従って入力しだEBパワーが有
効に利用されるのみならず、溶湯表面の温度分布が均一
化されるので、スプラッシュが生じにくくなり、完成度
の高い薄膜が形成される。Operation The present invention operates as follows by means of the above-mentioned means. By reducing the radiant heat from the surface of the molten metal in the evaporation crucible, thermal deformation of the substrate can be prevented. Furthermore, since the radiant heat from the back side of the evaporation crucible is reduced, heat loss from the back side of the evaporation crucible is reduced and the heat insulation effect is improved. Therefore, not only the input EB power is effectively used, but also the temperature distribution on the surface of the molten metal is made uniform, so that splashes are less likely to occur and a thin film with a high degree of perfection is formed.
実施例 以下に本発明の実施例を図面を参照しながら説明する。Example Embodiments of the present invention will be described below with reference to the drawings.
第1図は本発明の実施例の薄膜の製造装置の概略を示す
構造図である。FIG. 1 is a structural diagram showing an outline of a thin film manufacturing apparatus according to an embodiment of the present invention.
図において冷却器1および設置ハース2.蒸発るつぼ3
.材料4.基板6.マスク7、真空槽壁8は前述した第
2図と同一構成要素であり、同一番号で表示している。In the figure, a cooler 1 and an installation hearth 2. Evaporation crucible 3
.. Material 4. Substrate 6. The mask 7 and the vacuum chamber wall 8 are the same components as in FIG. 2 described above, and are indicated by the same numbers.
蒸発るつぼ3と基板6間に設置された凹面鏡9は表面粗
さが0.2 S程度の鏡面仕上げが施されており、蒸発
るつぼ3に対して凹となるように配置しである。また蒸
発るつt了3は高融点材料(例えばタングステン、モリ
ブデンetc )で形成された容器1oに収納されてお
り、容器10の外表面はやはり鏡面仕上げが施されてお
9、放射率0.2〜0.3程度の低放射率面が実現され
ている。そして設置ハース2との間に間隙11が形成さ
れている。A concave mirror 9 installed between the evaporation crucible 3 and the substrate 6 has a mirror finish with a surface roughness of about 0.2 S, and is arranged so as to be concave with respect to the evaporation crucible 3. Further, the evaporation melt 3 is housed in a container 1o made of a high melting point material (for example, tungsten, molybdenum, etc.), and the outer surface of the container 10 is also mirror-finished 9, with an emissivity of 0. A low emissivity surface of about 2 to 0.3 has been achieved. A gap 11 is formed between the installation hearth 2 and the installation hearth 2.
次に上記実施例の動作を説明する。Next, the operation of the above embodiment will be explained.
蒸発るつぼ3内の材料4はEB (口承せず)により溶
融し、発生した蒸気が基板6に堆積して薄膜を形成する
。この時基板6が受ける熱は、蒸気の凝縮熱Q1と蒸発
るつぼ溶湯表面からの輻射熱Q2である。輻射熱Q2の
うち直接基板6に入射する熱以外の輻射熱は凹面鏡9に
入射する。しかし凹面鏡9の表面は鏡面仕上げが施され
ており、かつ蒸発るつぼ3に対して凹となっているので
、凹面鏡9に入射した輻射熱Q2は反射して基板6に入
射せず蒸発るつぼ溶湯面に再入射する。その結果、基板
6が受ける輻射熱Q2は減少し、基板6の熱変形は軽減
される。The material 4 in the evaporation crucible 3 is melted by EB (non-oral transfer), and the generated vapor is deposited on the substrate 6 to form a thin film. The heat received by the substrate 6 at this time is the condensation heat Q1 of the steam and the radiant heat Q2 from the surface of the molten metal in the evaporation crucible. Of the radiant heat Q2, the radiant heat other than the heat that directly enters the substrate 6 enters the concave mirror 9. However, since the surface of the concave mirror 9 has a mirror finish and is concave with respect to the evaporation crucible 3, the radiant heat Q2 incident on the concave mirror 9 is reflected and does not enter the substrate 6, but on the molten metal surface of the evaporation crucible. Re-enter. As a result, the radiant heat Q2 received by the substrate 6 is reduced, and thermal deformation of the substrate 6 is reduced.
また蒸発るつぼ3が収納されている容器1oと設置ハー
ス2との間には真空の間隙11が存在するので、対流、
伝導による熱損失はほとんど無い。Furthermore, since a vacuum gap 11 exists between the container 1o in which the evaporation crucible 3 is stored and the installation hearth 2, convection,
There is almost no heat loss due to conduction.
輻射による熱損失Q3は、容器11の外表面は放射率0
.2〜0.3程度の低放射率面が実現されているので、
非常に減少する。従って前記Q2の減少も加えて非常に
高い断熱効果を発揮する。その結果、蒸発るつぼ溶湯表
面温度分布は均一化され、飽和蒸気圧差による湯面変動
も減少するので、スプラッシュも発生しにくくなり完成
度の高い薄膜の形成が可能となる。Heat loss Q3 due to radiation has an emissivity of 0 on the outer surface of the container 11.
.. Since a low emissivity surface of about 2 to 0.3 has been achieved,
greatly reduced. Therefore, in addition to the reduction in Q2, a very high heat insulating effect is exhibited. As a result, the temperature distribution on the surface of the molten metal in the evaporation crucible is made uniform, and fluctuations in the molten metal level due to the saturated vapor pressure difference are reduced, making it difficult to generate splash and making it possible to form a highly complete thin film.
また輻射熱の減少により断熱性が向上するので、従来構
成と比較して同一蒸発レートを確保するのに必要なEB
パワーは少なくてすみ、省エネルギーの面からみても効
果は大きい。また溶湯表面温度分布が均一化されるので
蒸発速度分布も均一化され、さらに大面積基板において
も膜厚分布均一化が可能という効果が得られる。In addition, the reduction in radiant heat improves insulation, so the EB required to ensure the same evaporation rate compared to the conventional configuration is
It requires less power and is highly effective in terms of energy conservation. Furthermore, since the temperature distribution on the surface of the molten metal is made uniform, the evaporation rate distribution is also made uniform, and it is also possible to make the film thickness distribution uniform even on a large-area substrate.
発明の詳細
な説明したところから明らかなように、本発明は材料を
溶融しその材料の蒸気を発生させる蒸発るつぼと、基板
と、蒸発るつぼからの輻射熱を減少させる手段を備える
事によシ、基板の熱変形を防止し、また溶湯表面温度分
布を均一化して湯面変動を減少し、またスプラッシュの
発生を防止するので、完成度の高い薄膜が得られるもの
である。As will be apparent from the detailed description of the invention, the present invention comprises an evaporation crucible for melting a material and generating vapor of the material, a substrate, and means for reducing radiant heat from the evaporation crucible. Since thermal deformation of the substrate is prevented, temperature distribution on the surface of the molten metal is made uniform to reduce fluctuations in the molten metal level, and occurrence of splash is prevented, a highly complete thin film can be obtained.
第1図は本発明の一実施例の薄膜の製造装置の概略を示
す構造図、第2図は従来例の製造装置の概略を示す構造
図である。
1・・・・・・冷却器、2・・・・・・設置ハース、3
・・目・・蒸発るつぼ、6・・・・・・基板、7・・・
・・・マスク、8・・団・真空槽壁、9・・・・・・凹
面鏡、1o・・・・・・低放射率材料容器。
代理人の氏名 弁理士 粟 野 重、孝 はが16第
1 図
9・−・凹面鏡
1o・−イ巳放射率材料容器
1]・・・間隙
第 2 図
1・−〉令却器
2・・・設置ハース
3−・・蒸づ白るつぼ
2 ]FIG. 1 is a structural diagram schematically showing a thin film manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a structural diagram schematically showing a conventional manufacturing apparatus. 1...Cooler, 2...Installation hearth, 3
...Eye...Evaporation crucible, 6...Substrate, 7...
...Mask, 8.. Vacuum chamber wall, 9..Concave mirror, 1o..Low emissivity material container. Name of agent: Patent attorney Shige Awano, Takashi Haga 16th
1 Fig. 9 - Concave mirror 1 o - I Emissivity material container 1]... Gap 2 Fig. 1 -> Cooling device 2... Installation hearth 3 - Steaming white crucible 2]
Claims (3)
を発生させる蒸発るつぼと、前記蒸気が堆積する基板と
、蒸発るつぼからの輻射熱を低減させる手段を備えた薄
膜の製造装置。(1) A thin film manufacturing apparatus comprising an evaporation crucible that melts a material supported by an installation hearth to generate material vapor, a substrate on which the vapor is deposited, and means for reducing radiant heat from the evaporation crucible.
となる高反射率材料壁を設けた請求項1記載の薄膜の製
造装置。(2) The thin film manufacturing apparatus according to claim 1, further comprising a wall of high reflectance material that is concave with respect to the evaporation crucible and is provided between the evaporation crucible and the substrate.
置ハース間に間隙を設けた請求項1記載の薄膜の製造装
置。(3) The thin film manufacturing apparatus according to claim 1, wherein a gap is provided between the evaporation crucible housed in a low emissivity material container and the installation hearth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63257572A JPH02104659A (en) | 1988-10-13 | 1988-10-13 | Thin film manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63257572A JPH02104659A (en) | 1988-10-13 | 1988-10-13 | Thin film manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02104659A true JPH02104659A (en) | 1990-04-17 |
Family
ID=17308137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63257572A Pending JPH02104659A (en) | 1988-10-13 | 1988-10-13 | Thin film manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02104659A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003013203A (en) * | 2001-07-04 | 2003-01-15 | Matsushita Electric Ind Co Ltd | Resin deposition unit and film forming device |
| CN107164733A (en) * | 2016-03-07 | 2017-09-15 | 三星显示有限公司 | Film forming device and the method that display device is manufactured using it |
-
1988
- 1988-10-13 JP JP63257572A patent/JPH02104659A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003013203A (en) * | 2001-07-04 | 2003-01-15 | Matsushita Electric Ind Co Ltd | Resin deposition unit and film forming device |
| CN107164733A (en) * | 2016-03-07 | 2017-09-15 | 三星显示有限公司 | Film forming device and the method that display device is manufactured using it |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4392939A (en) | Magnetron cathode sputtering system | |
| JP4570232B2 (en) | Plasma display protective film forming apparatus and protective film forming method | |
| JPH01275750A (en) | Thin metallic film manufacturing equipment | |
| JPH0222463A (en) | Production of metallic thin film | |
| JP3323522B2 (en) | Molecular beam cell | |
| JP2000212733A (en) | Heating evaporating method for evaporating material and device therefor | |
| JPH10219436A (en) | Vacuum deposition equipment | |
| JPH0673543A (en) | Continuous vacuum deposition equipment | |
| JPS63241921A (en) | Substrate heating device for molecular beam epitaxy equipment | |
| JPH0313566A (en) | Production of thin film | |
| JPH09143685A (en) | Crucible crack prevention method for continuous vacuum deposition equipment | |
| JPS60152670A (en) | Vapor source using high frequency induction heating | |
| JP3453190B2 (en) | Vacuum evaporation method and vacuum evaporation apparatus | |
| JP2000297361A (en) | Ultrafine particle film forming method and ultrafine particle film forming apparatus | |
| JPH0417668A (en) | Vapor deposition method | |
| JPS6059990B2 (en) | Vapor deposition equipment | |
| JPS6033349A (en) | Vacuum vapor deposition apparatus | |
| JPS6013067B2 (en) | Vacuum deposition equipment | |
| JPS6122618A (en) | Vapor-phase epitaxial crystal growing device | |
| JPH11274081A (en) | Electron beam deposition method and electron beam deposition device | |
| JPH02217464A (en) | Vacuum deposition equipment | |
| JPS6120032Y2 (en) | ||
| JPH0817070B2 (en) | Method for forming blackened aluminum thin film of color picture tube | |
| JPS58185766A (en) | Formation of film | |
| JPS63460A (en) | Evaporating method for ingot |