JPH02217464A - Vacuum deposition equipment - Google Patents
Vacuum deposition equipmentInfo
- Publication number
- JPH02217464A JPH02217464A JP1038610A JP3861089A JPH02217464A JP H02217464 A JPH02217464 A JP H02217464A JP 1038610 A JP1038610 A JP 1038610A JP 3861089 A JP3861089 A JP 3861089A JP H02217464 A JPH02217464 A JP H02217464A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- crucible
- heating means
- molten metal
- composition ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は基体表面に複数成分から成る薄膜を一定組成比
で蒸着する真空蒸着装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a vacuum evaporation apparatus for depositing a thin film consisting of a plurality of components at a constant composition ratio onto the surface of a substrate.
従来の技術
例えば蒸気圧の異なる薄膜材料ム1.ム2の組成比がL
AT ’ Li2である合金をるつぼで溶解して基体へ
真空蒸着する時、基体に形成される薄膜の前記薄膜材料
の組成比を’AT ” ’A2とし、ム2の蒸気圧の方
が高い場合には時間経過に伴ない、薄膜中のム2の組成
比を表わす式’A2 / (’l +’12 )の値と
、溶湯中のム2の組成比を表わす式Ll / (LAI
+LA2)の値とは共に第3図に示すように減少する
。従って薄膜の目標とする組成比の範囲が同図に示すy
の場合はそれに対応する短い時間T/の間に成膜を完了
しなければならない。Conventional techniques For example, thin film materials with different vapor pressures1. The composition ratio of Mu2 is L
When an alloy that is AT' Li2 is melted in a crucible and vacuum-deposited on a substrate, the composition ratio of the thin film material of the thin film formed on the substrate is 'AT''A2, and when the vapor pressure of Li2 is higher. With the passage of time, the value of the formula 'A2 / ('l + '12) representing the composition ratio of Mu2 in the thin film and the value of the formula Ll / (LAI
+LA2) both decrease as shown in FIG. Therefore, the target composition ratio range of the thin film is y as shown in the figure.
In this case, film formation must be completed within a correspondingly short time T/.
長時間継続して目標とする組成比の薄膜を得るための従
来技術として、例えば特開昭63−58622号公報に
は、Coo とOrの合金を蒸着する場合、蒸気圧の高
いOrのみを補給するものが提示されている。蒸気圧の
高い方の材料のみを補給するとるつぼ中の溶湯量が時間
経過に伴なって減少する。溶湯量の減少をきらう場合、
特に溶湯量を一定に維持したい場合は、Go とOrの
単位時間当ジの蒸発量をそれぞれNo、WrとするとG
oとcr ’6それぞれ時位時間当りWo、Wr補給す
ればよい。補給する材料の形状は粒状であっても棒状で
あってもよい。As a conventional technique for obtaining a thin film with a target composition ratio over a long period of time, for example, Japanese Patent Application Laid-Open No. 63-58622 discloses that when an alloy of Coo and Or is deposited, only Or having a high vapor pressure is supplied. What to do is presented. If only the material with higher vapor pressure is replenished, the amount of molten metal in the crucible will decrease over time. If you do not want the amount of molten metal to decrease,
In particular, if you want to maintain the amount of molten metal constant, if the evaporation amount per unit time of Go and Or is No and Wr, respectively, then G
It is sufficient to replenish Wo and Wr per hour for o and cr '6, respectively. The shape of the material to be replenished may be granular or rod-like.
発明が解決しようとする課題
しかしながら上記従来の真空蒸着では、次に説明する問
題が発生する。Problems to be Solved by the Invention However, the above-mentioned conventional vacuum evaporation method causes the following problems.
第4図において、1はるつぼ2に収納された例えばGo
とOrから成る合金で、図示しないが例えば公知の電
子ビーム等によって加熱されて溶湯となっている。3は
るつぼ2t−冷却するハースで。In FIG. 4, 1 is a container for example Go
Although not shown in the drawings, it is heated into a molten metal by, for example, a well-known electron beam or the like. 3 is a 2t crucible - a cooling hearth.
内部に冷却水通路4が形成されている。第ε図(ム)〜
(Flは第4図に示すco−Orr合金1溶湯表面上方
に位置するるつぼ2の表面にCj o −Or合金1か
ら発生した蒸気が付着して膜6が形成され、時間の経過
に伴なってその膜厚が増大し、その後Cjo−Or合金
1の溶湯が膜6に接触して膜6がG o −Orr合金
1溶湯に溶は込む過程を示すものである。A cooling water passage 4 is formed inside. Figure ε(mu)~
(Fl is a film 6 formed by the vapor generated from the Cj o -Or alloy 1 adhering to the surface of the crucible 2 located above the surface of the molten co-Orr alloy 1 shown in Fig. 4, and as time passes. The film thickness increases, and then the molten Cjo-Or alloy 1 comes into contact with the film 6, and the film 6 melts into the molten Go-Orr alloy 1.
第6図体)においてるつは2の表面に付着した膜6は時
間の経過に伴なって第6図中)に示すようにその膜厚を
増す。その時形成すべき薄膜の組成比を一定に保つため
の材料が例えば第4図の矢印ムに示すようにCo−Or
合金1の溶湯に供給されると、その供給動作による外乱
によって溶湯表面がゆれて第6図(C′lに示すように
溶湯が膜5に接触する。そうすると溶湯の温度は十分高
いので膜6は溶かされて、第6図中)、第6図(3)、
第6図(3)の順に示すように膜6がほとんど残らなく
なるまで矢印Bのように溶湯に溶は込む。In Figure 6), the film 6 attached to the surface of the glass 2 increases in thickness as time passes, as shown in Figure 6). The material for keeping the composition ratio of the thin film to be formed constant at that time is, for example, Co-Or as shown by the arrow in FIG.
When the molten metal of Alloy 1 is supplied, the surface of the molten metal shakes due to the disturbance caused by the supply operation, and the molten metal comes into contact with the film 5 as shown in FIG. is melted (in Figure 6), Figure 6 (3),
As shown in FIG. 6(3), the melt is poured into the molten metal in the direction of arrow B until almost no film 6 remains.
Orの蒸気圧はCoのそれよりも高いので膜6のOrの
濃度は溶湯のそれの4〜6倍となる。したがって膜6が
溶湯に溶は込むと溶湯のOr濃度が高くなり、それによ
って形成される薄膜のOr濃度も高くなるので薄膜のG
oとOrの組成比を一定に維持することが困難であった
。Since the vapor pressure of Or is higher than that of Co, the concentration of Or in the film 6 is 4 to 6 times that of the molten metal. Therefore, when the film 6 melts into the molten metal, the Or concentration of the molten metal increases, and the Or concentration of the thin film formed thereby also increases.
It was difficult to maintain a constant composition ratio of o and Or.
本発明は上記従来の問題に鑑み、組成比を一定に維持し
て蒸着することができる真空蒸着装置を提供することを
目的とする。SUMMARY OF THE INVENTION In view of the above-mentioned conventional problems, an object of the present invention is to provide a vacuum evaporation apparatus that can perform evaporation while maintaining a constant composition ratio.
課題を解決するための手段
上記課題を解決するため本発明の真空蒸着装置は、互い
に蒸気圧の異なる複数の薄膜材料を収納する絶縁体で構
成されたるつぼと、薄膜材料の蒸気が付着して薄膜が形
成される基体とが設置される真空容器中に、るつぼ中の
薄膜材料を加熱する第1の加熱手段と、第1の加熱手段
により加熱された薄膜材料から発生してるつぼ表面に付
着した蒸気が形成する薄膜を加熱して再蒸発させる高周
波加熱手段とを設けて構成するものである。Means for Solving the Problems In order to solve the above problems, the vacuum evaporation apparatus of the present invention includes a crucible made of an insulator that stores a plurality of thin film materials having different vapor pressures, and a crucible in which the vapors of the thin film materials are attached. A first heating means for heating the thin film material in the crucible is installed in a vacuum container in which a substrate on which a thin film is formed, and a first heating means for heating the thin film material in the crucible, and a first heating means for heating the thin film material heated by the first heating means and adhering to the surface of the crucible. The device is constructed by providing a high-frequency heating means for heating and re-vaporizing the thin film formed by the vapor.
作用
本発明は上記した構成により、るつは表面に付着した薄
膜を再蒸発させられるので、溶湯の組成比と異なる組成
比の薄膜の溶湯への溶は込みを防止することができる。Function: With the above-described structure, the present invention can re-evaporate the thin film attached to the surface of the melt, thereby preventing a thin film having a composition ratio different from that of the molten metal from penetrating into the molten metal.
したがって一定組成比の薄膜を基体に蒸着することが可
能となる。Therefore, it becomes possible to deposit a thin film with a constant composition ratio on the substrate.
実施例
以下、本発明の一実施例における真空蒸着装置を図面に
基づいて説明する。EXAMPLE Hereinafter, a vacuum evaporation apparatus according to an example of the present invention will be explained based on the drawings.
第1図は本発明の一実施例の構造図である。なお、従来
例と同一構成要素は同一番号を付している。FIG. 1 is a structural diagram of an embodiment of the present invention. Note that the same components as in the conventional example are given the same numbers.
図中6は高周波電源7から高周波電力を供給されるコイ
ルで、その周辺にある導体を誘導加熱する。8はその表
面に薄膜9を形成するための基体で、基体ホルダ1oに
よって真空容器11内の上部に支持されている。12は
コイル6から発生する高周波がるつ#Y2の近傍から外
へ逃げて、例えば薄膜9に作用して薄膜9を加熱する等
の不都合が生じないようにするためのシールドである。In the figure, reference numeral 6 denotes a coil supplied with high frequency power from a high frequency power source 7, which inductively heats the conductor around the coil. Reference numeral 8 denotes a substrate on which a thin film 9 is to be formed, and is supported at the upper part of the vacuum vessel 11 by a substrate holder 1o. Reference numeral 12 denotes a shield for preventing the high frequency waves generated from the coil 6 from escaping from the vicinity of the coil #Y2 and causing problems such as acting on the thin film 9 and heating the thin film 9, for example.
なお、そのような不都合の恐れが無い場合はシールド1
2を省略することは可能である。また第1図においては
真空容器11を排気する公知の排気手段や薄膜材料1を
加熱する例えば公知の電子ビーム加熱手段は省略しであ
る。なお本実施例の構成においては、るつぼ2は絶縁体
で構成されている。In addition, if there is no risk of such inconvenience, use Shield 1.
2 can be omitted. Further, in FIG. 1, a known evacuation means for evacuating the vacuum container 11 and, for example, a known electron beam heating means for heating the thin film material 1 are omitted. In the configuration of this embodiment, the crucible 2 is made of an insulator.
また、コイル6とシールド12の冷却手段は省略したが
、大きな高周波電力を必要とする場合はハース3と同様
に過熱防止のために水冷構造としてもよい。Furthermore, although the cooling means for the coil 6 and the shield 12 are omitted, if large high-frequency power is required, a water-cooled structure may be used to prevent overheating, as in the case of the hearth 3.
次に本実施例の装置の動作を説明する。Next, the operation of the apparatus of this embodiment will be explained.
例えばCo−Cr合金1から成る薄膜材料が電子ビーム
加熱手段などによって加熱されて発生する蒸気の一部は
基体8に付着して薄膜9を形成し、蒸気の他の一部は第
2図に示すように従来と同様にるつtチ2の上縁部表面
に膜6として付着する。For example, a part of the vapor generated when a thin film material made of Co-Cr alloy 1 is heated by an electron beam heating means etc. adheres to the substrate 8 to form a thin film 9, and the other part of the vapor is shown in FIG. As shown, a film 6 is deposited on the upper edge surface of the crucible 2 as in the conventional case.
コイル6に流れる高周波電流はその周辺の導体に誘導電
流を生じさせるが、その周波数が高くなるほどいわゆる
表皮効果によって誘電電流は導体の表面に近づくほど高
密度に流れるようになる。The high frequency current flowing through the coil 6 generates an induced current in the conductor around it, and the higher the frequency, the more densely the induced current flows closer to the surface of the conductor due to the so-called skin effect.
したがって第2図に太線で示す導体部分の表面近傍が集
中的に加熱されることになる。この加熱によって最も温
度が上るのは(表面積/体積)が最も太きい、すなわち
(発熱量/体積)が最も大きい導体である膜Sである。Therefore, the vicinity of the surface of the conductor portion shown by the bold line in FIG. 2 is heated intensively. The film S whose temperature increases the most due to this heating is the conductor with the largest (surface area/volume), that is, the conductor with the largest (calorific value/volume).
したがって膜5Il′iるつぼ2の表面に付着すると同
時に速やかに加熱されて温度上昇し、速やかに再蒸発す
るので従来の問題であった膜6の溶湯への溶は込み(第
5図参照)による薄膜9の組成比の変動を解決すること
ができるO
尚、本実施例は薄膜材料1の加熱に電子ビームを用いた
が本発明の加熱手段はこれに限るものではなく1例えば
高周波電源アよりも低周波で薄膜材料1を内部から加熱
できる高周波誘導加熱手段を用いてもよい〇
発明の効果
以上述べたように本発明によれば、るつぼに収納された
互いに蒸気圧の異なる複数の薄膜材料から蒸発してるつ
ぼ表面に付着した溶湯とは組成比の異なる膜が溶湯へ溶
は込むことを防止することが可能となるので、生成する
薄膜の組成比全一定に保つことができる。Therefore, as soon as the membrane 5Il'i adheres to the surface of the crucible 2, it is quickly heated, the temperature rises, and it is quickly re-evaporated, which prevents the conventional problem of the membrane 6 from penetrating into the molten metal (see Figure 5). Fluctuations in the composition ratio of the thin film 9 can be resolved.Although the present embodiment uses an electron beam to heat the thin film material 1, the heating means of the present invention is not limited to this. Alternatively, a high-frequency induction heating means that can heat the thin film material 1 from inside using low frequency waves may be used. Effects of the Invention As described above, according to the present invention, a plurality of thin film materials having different vapor pressures stored in a crucible can be heated. Since it is possible to prevent a film having a different composition ratio from that of the molten metal that has evaporated from the crucible and adhered to the surface of the crucible from penetrating into the molten metal, the composition ratio of the formed thin film can be kept constant.
第1図は本発明の一実施例における真空蒸着装置の断面
図、第2図は第1図の要部拡大断面図、第3図は従来の
真空蒸着におけるるつぼ内の溶湯の組成比と形成される
薄膜の組成比の軽時変化?示す特性図、第4図は従来例
のるつぼ周辺の正面構造を示す断面図、第5図は従来例
の問題点を説明するための要部拡大断面図である。
1・・・・・・薄膜材料、2・・・・・・るつぼ、6・
・・・・・膜、6・・・・・コイル、7・・・・・・高
周波電源、8・・・・・・基体、9・・・・・・薄膜、
11・・・・・・真空容器。
代理人の氏名 弁理士 粟 野 重 孝 ほか1名第1
図
1− 簿侯材計
2−るつは
3−ハース
4−:4 !可水通訃
6−・−コイλし
7−゛高間汲電ン沖、
8 基体
9−簿膜
to−・−基イ隼ネルタ
/l −真空2巻
12− シールド
第
図
Qフ
城Fig. 1 is a cross-sectional view of a vacuum evaporation apparatus according to an embodiment of the present invention, Fig. 2 is an enlarged sectional view of the main part of Fig. 1, and Fig. 3 is a composition ratio and formation of molten metal in a crucible in conventional vacuum evaporation. Changes in the composition ratio of thin films over time? FIG. 4 is a sectional view showing the front structure around the crucible of the conventional example, and FIG. 5 is an enlarged sectional view of the main part for explaining the problems of the conventional example. 1... Thin film material, 2... Crucible, 6.
... Membrane, 6 ... Coil, 7 ... High frequency power supply, 8 ... Base, 9 ... Thin film,
11... Vacuum container. Name of agent: Patent attorney Shigetaka Awano and 1 other person 1st
Figure 1- Book Houzai total 2- Rutsuha 3- Hearth 4-: 4! Water connection 6-・-Koi λshi 7-゛Takama Kumiden Oki, 8 Base 9-Membrane to-・-Basic Hayabusa Nelta/l-Vacuum 2 Volume 12-Shield Diagram QF Castle
Claims (2)
絶縁体で構成されたるつぼと、前記薄膜材料の蒸気が付
着して薄膜が形成される基体とが設置される真空容器中
に、前記るつぼ中の薄膜材料を加熱する第1の加熱手段
と、前記第1の加熱手段により加熱される前記薄膜材料
から発生して前記るつぼ表面に付着する蒸気が形成する
薄膜を加熱して再蒸発させる高周波加熱手段とを設けて
なる真空蒸着装置。(1) A crucible made of an insulator that stores a plurality of thin film materials having different vapor pressures, and a substrate to which a thin film is formed by adhering the vapor of the thin film materials are placed in a vacuum container. a first heating means for heating a thin film material in a crucible, and a thin film formed by vapor generated from the thin film material heated by the first heating means and attached to the surface of the crucible to be heated and reevaporated. A vacuum evaporation device equipped with high-frequency heating means.
形成する薄膜を加熱する高周波加熱手段の周波数よりも
低い周波数の高周波加熱手段により構成して成る請求項
1記載の真空蒸着装置。(2) The vacuum evaporation apparatus according to claim 1, wherein the first heating means is constituted by high-frequency heating means having a frequency lower than that of the high-frequency heating means for heating the thin film formed by the vapor adhering to the surface of the crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1038610A JPH02217464A (en) | 1989-02-17 | 1989-02-17 | Vacuum deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1038610A JPH02217464A (en) | 1989-02-17 | 1989-02-17 | Vacuum deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02217464A true JPH02217464A (en) | 1990-08-30 |
Family
ID=12530032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1038610A Pending JPH02217464A (en) | 1989-02-17 | 1989-02-17 | Vacuum deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02217464A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115612990A (en) * | 2022-10-28 | 2023-01-17 | 光洋新材料科技(昆山)有限公司 | Anti-sticking treatment method for evaporation crucible |
-
1989
- 1989-02-17 JP JP1038610A patent/JPH02217464A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115612990A (en) * | 2022-10-28 | 2023-01-17 | 光洋新材料科技(昆山)有限公司 | Anti-sticking treatment method for evaporation crucible |
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