JPH02106928A - Manufacture of integrated circuit device - Google Patents

Abstract

PURPOSE:To prevent a foreign matter from concentrating at the center of a wafer by reciprocating a wafer at the front or rear right or left of the fulcrum of a nozzle while so reciprocating the injection of high pressure superhigh purity water as to be brought into contact with the whole upper face of the wafer during passing through the center of the wafer while rotating the wafer. CONSTITUTION:A high pressure superhigh purity water injection 4 is conducted from a nozzle 5 communicating with a high pressure superhigh purity water pipe 7, rotated at a nozzle fulcrum 6 as a center, and moved in a direction of a longitudinal nozzle moving range 8 by a longitudinally moving unit 10 to inject superhigh purity water in a high pressure superhigh purity water injection moving range 3. For example, the pressurized superhigh purity water is passed while rotating a wafer, injected from the nozzle, the nozzle is so reciprocated in a circular arc state as to pass the center of the wafer, and the fulcrum of the nozzle is further reciprocated longitudinally. Then, superhigh purity water which is not pressurized is dropped to the center of the wafer while rotating the wafer, and moisture on the wafer is removed by rotating the wafer every minute.

Description

Detailed Description of the Invention (Industrial Field of Application)
I will. Ryubukuro-gai is a product manufactured by multiplication circuits that removes A-substances by spraying high-pressure ultra-pure water from a nozzle onto the top surface of the wafer.

(Prior art) Currently, there is no method in which the high-pressure ultrapure water nozzle 5 is scanned in the wafer radius or vertical range while rotating the wafer 2, as shown in FIG. ,@
As shown in Fig. 4, there is a problem in which foreign particles 9 of 0.2 μm or less are concentrated and remain in the flea at the center of the wafer (problem to be solved by the invention). While rotating the nozzle so that the jet of pure water hits the entire top surface of the wafer, the nozzle is moved back and forth within the range of the radius of the wafer or the diameter of the wafer. It is difficult to adjust accurately so that it passes through the center of the wafer, and if it does not pass through the center of the wafer, the foreign object in the center of the wafer will be avoided as shown in Figure 4.
90 [Structure of the Invention] (Detailed means for solving the problem) The present invention sprays high-pressure ultrapure water around the center 8B of the wafer while rotating the wafer, and sprays the entire upper surface of the wafer. E
The fulcrum of the nozzle is reciprocated TvJi or left and right for 5 to 20rrrn while reciprocating so as to hit the nozzle.

(Operation) While rotating the wafer, the jet of high-pressure ultra-pure water is passed through the center of the wafer and then reciprocated so that it hits the entire top surface, and the fulcrum of the nozzle is moved back and forth or 1 to 5 to 2 times to the left and right.
By setting the distance to 0 mm, the jet of high-pressure ultrapure water is sure to hit the center of the wafer, and it is possible to avoid concentration of foreign matter at the center of the wafer.

(Example) An example between two houses will be described in detail below. FIGS. 1 and 2 are diagrams showing an apparatus for manufacturing the collecting port 12) according to the present invention. This device is used when cleaning the surface of a wafer 2 rotating in the clockwise rotation direction 1 with a high-pressure ultrapure water jet 4. The high-pressure ultrapure water injection 4 is performed from a nozzle 5 communicating with a high-pressure ultrapure water pipe 7, and the nozzle fulcrum 6
The device 10 rotates around ρ) and directs the nozzle in the direction of the forward and backward movement range 8, so that ultrapure water can be injected in the high-pressure ultrapure water injection movement range 3I. .

The materials used are a 5-inch silicon wafer and ultrapure water. The equipment used was Ueno 1 - the processing device was APF-6841F manufactured by Toshiba Machine Co., Ltd., and the Ueno 1 - dust inspection device was Tokyo Kogaku (□□□! IWM-1000).

The conditions are 1 while rotating the wafer at 1000 revolutions per minute.
Apply pressure to 27 kg/cm for 5 seconds and add 0.2 ml of ultrapure water.
A 2 μm jet is ejected from the nozzle, and the nozzle is reciprocated in an arc shape so as to pass through the center of the wafer.The fulcrum of the nozzle is then reciprocated back and forth by 20 mm.Next, the wafer is rotated at 500 revolutions per minute for 10 seconds. Unpressurized ultrapure water is pumped into the central part of the sea urchin I at 550cc/min through a pipe.
Drip my friend. Next, water on the wafer was removed by rotating the sea urchin I.- at 5000 revolutions per minute.9. Next, it was heated for 120 seconds on a hot grate at 160°C. Next, the garbage inspection device WM-
1000 is dangerous when inspecting objects larger than 0.117μm.

〔Effect of the invention〕

As shown in Figure @3, the jet of high-pressure ultra-pure water moves back and forth away from the center of the Ueno. According to the present invention, by rotating the nozzle left and right and reciprocating the fulcrum back and forth, the 0.117 μm at the center of the wafer is removed.
The above concentration 7i of foreign matter 9 could be prevented as shown in FIG.

[Brief explanation of drawings]

FIG. 1 shows one embodiment of the present invention, and is a front view in which the fulcrum of the nozzle reciprocates back and forth while the high-pressure ultrapure water injected from the nozzle reciprocates in an arc shape over a rotating wafer; Figure 2 is a side view of the high-pressure ultrapure water sprayed from the nozzle in Figure 1 hitting the center of the rotating wafer, and Figure 3 shows the distribution of foreign matter on the surface of the nine wafers that were cleaned by Mokusakusha. 4 is a plan view showing the distribution of foreign particles of 0.117 μm or more on the surface of a wafer cleaned using the conventional technique. FIG. It is a front view of the wafer reciprocating in an arc shape from the center of the wafer.
2... Wafer 3... High-pressure ultrapure water injection movement range,
4...High-pressure ultra-pure water injection. 5... Nozzle, 6... Nozzle fulcrum, 7... High pressure ultrapure water pipe, 8... Nozzle forward and backward movement range, 9... Foreign object, 10... Back and forth movement vJ device.

Claims (1)

[Claims] In the wafer cleaning process of integrated circuit manufacturing, a method of cleaning the top surface of a wafer by spraying high-pressure ultrapure water from a nozzle,
An integrated circuit characterized in that the entire top surface of the wafer is cleaned by rotating the wafer, reciprocating the nozzle so that the entire top surface of the wafer is sprayed with high-pressure ultrapure water, and moving the fulcrum of the nozzle back and forth or left and right. Manufacturing equipment.