JPH02106963A - Complementary type mos integrated circuit - Google Patents

Complementary type mos integrated circuit

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Publication number
JPH02106963A
JPH02106963A JP63261886A JP26188688A JPH02106963A JP H02106963 A JPH02106963 A JP H02106963A JP 63261886 A JP63261886 A JP 63261886A JP 26188688 A JP26188688 A JP 26188688A JP H02106963 A JPH02106963 A JP H02106963A
Authority
JP
Japan
Prior art keywords
output
terminal
source
circuit
channel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63261886A
Other languages
Japanese (ja)
Inventor
Hideo Asano
秀夫 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63261886A priority Critical patent/JPH02106963A/en
Publication of JPH02106963A publication Critical patent/JPH02106963A/en
Pending legal-status Critical Current

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  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To interrupt a harmful current path even when the power supply of either one circuit of both circuits is brought to an OFF state when outputs from two integrated circuits are connected to a common bus, and to use the title integrated circuits safely by installing an N-MOST as a switch between a P-MOST and an N-MOST constituting an output circuit. CONSTITUTION:An N-MOST 31 is added, and its source is connected to the drain of a P-MOST 1, its drain to the source of an N-MOST 2 and its gate to a power terminal 3 together with the source of the P-MOST 1 and a bulk. The N-MOST 2 is brought to an ON state when input voltage A and B is brought to 'H' at the time of normal operation (when a power supply is brought to the ON state) when an 'H' or 'L' output is emitted to an output terminal X, and 'L' is output to the output terminal X. When input voltage A and B is brought to 'L', the P-MOST 1 and the N-MOST 31 are brought to the ON state, and voltage acquired by substracting a voltage drop between the source- drain of the P-MOST 1 and a voltage drop between the source-drain of the N-MOST 31 from VCC is output as 'H' to the output terminal X.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は相補形MO8(以下、CMO8と呼ぶ)トラ
ンジスタを用いた集積回路に係り、特にその出力部の改
良に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an integrated circuit using complementary MO8 (hereinafter referred to as CMO8) transistors, and particularly relates to an improvement in the output section thereof.

〔従来の技術〕[Conventional technology]

第4図はCMOSトランジスタで構成された従来の出力
回路を示す回路図で、(1)はPチャネルMOSトラン
ジスタ(以下、P−MOSTと呼ぶ) 、(2)はP−
MO8T (1)とドレインが共通に接続されるように
直列に接続されたnチャネルMOSトランジスタ(以下
、n−MOSTと呼ぶ) 、(3)はP−MOST(1
)のソースに電圧VCCを供給する[原端子、(4)は
n−MO8T (2)のソースを接地するGND端子、
(ト)はP−MO3T(1)のゲートIこ入力Aを与え
る入力端子、(B)はn−MO8T(2)のゲートに入
力Bを与える入力端子、(3)はP−MOST(1)及
びn−MOST(2)の共通接続ドレインから出力Xを
取り出す出力端子である。この回路は出力Xに高レベル
状態(°′H”)、低レベル状態(“L”)及び高イン
ピーダンス状態(P−MOSTf1)及びn−MOST
(2)が共にオフ状態)の3つの状態を有するトライス
テート回路である。
FIG. 4 is a circuit diagram showing a conventional output circuit composed of CMOS transistors, (1) is a P-channel MOS transistor (hereinafter referred to as P-MOST), and (2) is a P-channel MOS transistor (hereinafter referred to as P-MOST).
MO8T (1) is an n-channel MOS transistor (hereinafter referred to as n-MOST) connected in series so that its drain is commonly connected, and (3) is a P-MOST (1).
) to supply the voltage VCC to the source of the original terminal, (4) is the GND terminal that grounds the source of n-MO8T (2),
(G) is an input terminal that provides input A to the gate of P-MO3T (1), (B) is an input terminal that provides input B to the gate of n-MO8T (2), and (3) is an input terminal that provides input A to the gate of P-MOST (1). ) and n-MOST (2). This circuit has output
This is a tri-state circuit having three states: (2) are both off states).

第5図は第4図の出力回路を含む集積回路を2個それら
の出力を共通のバスに接続した応用例を示すブロック図
で、図において、01は第1の集積回路で、電源端子(
3)には電圧VCCIが供給され、接地端子(4)は接
地され、出力Xを出す。(1)は第2の集積回路で、N
源端子(至)には電圧VCC2が供給され、接地端子α
→は接地され、出力Yを出1゜(7)は共通バスである
。この第5図の構成において、出力Xを共通バス(1)
へ送り出す時は第2の集積回路(イ)を制御して出力端
子(ト)を高インピーダンスとし、また、出力Yを共通
バス■へ送り出す時は第1の集積回路C1Oを制御して
出力端子(3)を高インピーダンスとすることによって
、互いに干渉がなく、バス(7)を共用する。
FIG. 5 is a block diagram showing an application example in which two integrated circuits including the output circuit shown in FIG. 4 are connected to a common bus. In the figure, 01 is the first integrated circuit, and the power terminal (
3) is supplied with the voltage VCCI, the ground terminal (4) is grounded, and outputs X. (1) is the second integrated circuit, N
The voltage VCC2 is supplied to the source terminal (to), and the ground terminal α
→ is grounded, outputs Y, and 1° (7) is a common bus. In the configuration shown in Fig. 5, the output X is connected to the common bus (1)
When sending the output Y to the common bus ■, the second integrated circuit (A) is controlled to make the output terminal (G) high impedance, and when the output Y is sent to the common bus ■, the first integrated circuit C1O is controlled to make the output terminal (G) high impedance. By making (3) high impedance, there is no mutual interference and the bus (7) can be shared.

第6図は第5図の回路の出力部の詳細図で、第1の集積
回路GO側の出力部はP−MOST (1)とn−MO
ST(2)とで構成され、いずれも、バルクはソースに
接続され、そのソース・ドレインの接続は第5図におい
て説明した通りである。図中、(8)及び(9)はそれ
ぞれP−MOST(1)及びn−MOST(2)のゲー
ト端子である。また、第2の集積回路(イ)の出力部は
P−MOSTQl)とn−MOSTQlとで構成され、
図中、(至)及び(1’Jはそれぞれ同様のゲート端子
で、その構成は第1の集積回路a0の対応部分と全く同
じである。そして、出力端子(3)と電源端子(3)及
び接地端子(4)との間にはそれぞれ寄生グイオードク
リ及びに)が形成され、出力端子(至)と電源端子(至
)及び接地端子α4との間にはそれぞれ寄生ダイオード
の及び(財)が形成されている。
FIG. 6 is a detailed diagram of the output section of the circuit shown in FIG.
ST(2), the bulk of each is connected to the source, and the source-drain connection is as explained in FIG. In the figure, (8) and (9) are gate terminals of P-MOST (1) and n-MOST (2), respectively. Further, the output section of the second integrated circuit (A) is composed of P-MOSTQl) and n-MOSTQl,
In the figure, (to) and (1'J) are respectively similar gate terminals, and their configurations are exactly the same as the corresponding parts of the first integrated circuit a0.In addition, the output terminal (3) and the power supply terminal (3) Parasitic diodes (and) are formed between the output terminal (to) and the ground terminal (4), and parasitic diodes (and) are formed between the output terminal (to) and the power supply terminal (to) and the ground terminal (α4), respectively. It is formed.

第6図において、出力Xを共通のパスラインへ送出する
ときには、ゲート端子(至)を″H”に、ゲート端子0
1をL″にして、出力端子(ト)を高インピーダンスと
する。他方、出力Yを送出するときには、ゲート端子(
8)を”H”に、ゲート端子(9)をIIL”にして、
出力端子(X)を高インピーダンスとする。
In Fig. 6, when sending the output X to the common path line, the gate terminal (to) is set to "H", and the gate terminal
1 to L'' to make the output terminal (G) high impedance. On the other hand, when sending out the output Y, the gate terminal (
8) to "H" and gate terminal (9) to "IIL",
The output terminal (X) is set to high impedance.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の集積回路は以とのように構成されていたので、第
1及び第2の集積回路のいずれか一方の電源がオフ状態
の場合、電源電圧の加えられている側の集積回路の出力
がH″で、Kmがオフ状態の側の集積回路の出力が高イ
ンピーダンスである時に、寄生ダイオード及びP−MO
STを通して両電源端子間に電流が流れ、回路系に悪影
響を与え、場合によっては破壊に繋がるという問題点が
あった。
Conventional integrated circuits were configured as follows, so when either the first or second integrated circuit is powered off, the output of the integrated circuit to which the power supply voltage is applied is H'', when the output of the integrated circuit on the off-state side is high impedance, the parasitic diode and P-MO
There is a problem in that current flows between the two power supply terminals through the ST, which adversely affects the circuit system and may even lead to destruction.

即ち、電圧VCC2がオフ状態で、出力X = IIH
I+出力Y=高インピーダンスの時、電源端子(3)→
P−MO8T(1)のソース−1ドレイン→出力端子X
=Y→寄生ダイオード倖→電源端子a3の経路で電流が
流れる。また、P−MO8TQυのゲート端子(至)及
びn−MOST(6)のゲート端子Qlの重圧は電圧V
CC2がオフ状態になるので不安定となり、P−MOS
T (lυのオン状態時が生じ、電源端子(a)−>P
 −MOST tl)のソース→ドレイン→出力端子x
=Y−+P−MO8T Ql)のドレイン−ソース→電
源端子@の経路でも電流が流れる。
That is, when voltage VCC2 is off, output X = IIH
When I + output Y = high impedance, power supply terminal (3) →
Source-1 drain of P-MO8T (1) → Output terminal X
A current flows through the path =Y→parasitic diode □→power terminal a3. In addition, the pressure on the gate terminal (to) of P-MO8TQυ and the gate terminal Ql of n-MOST (6) is the voltage V
Since CC2 is turned off, it becomes unstable and the P-MOS
T (on state of lυ occurs, power supply terminal (a) -> P
-MOST tl) source → drain → output terminal x
=Y-+P-MO8T Ql) Current also flows through the drain-source → power supply terminal @ path.

この発明は上記のような問題点を解消するためになされ
たもので、いずれか一方の電源がオフ状態の場合におい
ても、出力バスを共有することのできるCMO8集積回
路を得ることを目的としている。
This invention was made to solve the above-mentioned problems, and its purpose is to obtain a CMO8 integrated circuit that can share an output bus even when one of the power supplies is off. .

〔課題を解決するための手段〕 この発明に係るCMO3集積回路は出力回路を構成する
P−MOSTとn−MOSTとの間にスイッチ素子とし
てのn−MOSTを挿入したものである。
[Means for Solving the Problems] A CMO3 integrated circuit according to the present invention has an n-MOST as a switching element inserted between a P-MOST and an n-MOST that constitute an output circuit.

〔作用〕[Effect]

この発明では2個のCMOS集積回路のそれぞれの出力
を共通の出力バスへ供給するものにおいて、いずれか一
方のCMO8集積回路の電源をオフ状態にして出力を高
インピーダンスとし、残l)の一方のCMOS集積回路
の出力がIeH”の場合でも、電源がオフ状態にあるC
MOS集積回路について出力回路に挿入されたスイッチ
素子としてのn −MOS Tがオフ状態になることに
より、上記出力回路を構成するP−MOST及び寄生ダ
イオードを介して形成される電流路は遮断される。
In this invention, in which the respective outputs of two CMOS integrated circuits are supplied to a common output bus, one of the CMOS integrated circuits is powered off to make the output high impedance, and one of the remaining Even if the output of the CMOS integrated circuit is IeH, the CMOS integrated circuit
Regarding the MOS integrated circuit, when the n-MOS T as a switching element inserted in the output circuit is turned off, the current path formed via the P-MOST and the parasitic diode that constitutes the output circuit is cut off. .

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図はこの発明の一実施例を示す回路図で、前記従来
のものと同一符号は同一部分を示すのでその説明は省略
する。第1図は2つの回路系の接地電圧が同一で、いず
れか一方の電源がオフ状態の場合に用いるものである。
FIG. 1 is a circuit diagram showing an embodiment of the present invention, and the same reference numerals as in the conventional circuit designate the same parts, so the explanation thereof will be omitted. FIG. 1 is used when the ground voltages of the two circuit systems are the same and one of the power supplies is in an off state.

本質的論理構成は第4図の従来のものと同一であるが、
相異する点はN−MOSTc]I)が追加され、N−M
OST C11)(7) ソー スがP  MOST(
1)のドレインに接続され、N−MOSTOυのドレイ
ンがN−MOST(23のソースに接続され、N−Ni
08T c>D O’)ゲートがP−MO8’ro)ノ
ソース及びバルクと共に電源端子(3)に接続されてい
る。
The essential logical configuration is the same as the conventional one shown in Figure 4, but
The difference is that N-MOSTc]I) is added, and N-M
OST C11) (7) Source is P MOST (
1), the drain of N-MOSTOυ is connected to the source of N-MOST (23, and N-Ni
08T c>D O') gate is connected to the power supply terminal (3) together with the P-MO8'ro) no source and bulk.

第2図は第1図の実施例の寄生ダイオードを考慮した回
路図で、N−MOSTOI)がオフ状態の時には出力端
子(3)から電源端子(3)への電流通路はなく、いず
れか一方の回路(1)または(2)の電源がオフ状態に
なる2つのCMOS集積回路の出力を共通のバスに接続
しても、従来の場合のような回路系に対する悪影響は生
じない。
Fig. 2 is a circuit diagram that takes into account the parasitic diode of the embodiment shown in Fig. 1. When the N-MOSTOI) is in the off state, there is no current path from the output terminal (3) to the power supply terminal (3), and only one Even if the outputs of the two CMOS integrated circuits in which the power of the circuit (1) or (2) is turned off are connected to a common bus, there is no adverse effect on the circuit system as in the conventional case.

通常のII H11またはII L II  出力を出
力端子(3)へ出す通常動作時(電源がオン状態時)を
考える。
Consider a normal operation (when the power is on) in which a normal II H11 or II L II output is output to the output terminal (3).

入力電圧A及びBが′H”の時、n−MO3T(2jは
オン状態にあり、出力端子凶)にはL″′が出力される
。すなわち、第4図の従来のものと同じ動作を示す。
When the input voltages A and B are 'H', L'' is output to n-MO3T (2j is in the on state and the output terminal is bad). That is, the same operation as the conventional one shown in FIG. 4 is shown.

次に、入力電圧A及びBが+(L”の時、l)−M 0
5T(1)及びn−MOSTC3])はオン状態にあり
、VCCからP−MO3T(1)のソース・ドレイン間
電圧降下分VSDP及びn−MO3TC(])のソース
・ドレイン間電圧降下分V5DNだけ減少した電圧(V
cc  Vsrip  V5 opi )が出力端子(
ト)にl(H+1として出力される。すなわち、第4図
の従来のものと同じ動作を示す。
Next, when input voltages A and B are +(L”, l)-M 0
5T(1) and n-MOSTC3]) are in the on state, and the voltage drop between the source and drain of P-MO3T(1) VSDP and the voltage drop between the source and drain of n-MO3TC(]) V5DN from VCC. Reduced voltage (V
cc Vsrip V5 opi) is the output terminal (
(G) is output as l(H+1). That is, the same operation as the conventional one shown in FIG. 4 is shown.

第3図は第1図のCMO3集積回路の構造断面図で、n
−MO3T(3])は出力回路を構成する1MOST 
(2)と同一工程で形成されるので、n−IV40ST
6υを形成するための特別な工程を追加する必要はない
FIG. 3 is a cross-sectional view of the structure of the CMO3 integrated circuit shown in FIG.
-MO3T(3]) is 1MOST that constitutes the output circuit
Since it is formed in the same process as (2), n-IV40ST
There is no need to add a special process to form 6υ.

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明によれば、出力回路を構成するP
 −M OS Tとn−MOSTとの間にスイッチとし
てのn−MO8Tを設けたので、2つの集積回路の出力
を共通のバスに接続する場合、出力が高インピーダンス
となる側の回路のスイッチとしてのn−MOSTをオフ
状態にすることにより、両回路いずれか一方の回路の@
源がオフ状態になっても、有害電流路を遮断し、安全に
使用が可能で、CMOS集積回路の応用範囲を拡大する
As described above, according to the present invention, P
- Since n-MO8T is installed as a switch between MOST and n-MOST, when connecting the outputs of two integrated circuits to a common bus, it can be used as a switch for the circuit whose output is high impedance. By turning off the n-MOST of both circuits, @
Even when the power source is turned off, harmful current paths are blocked and the device can be used safely, expanding the range of applications for CMOS integrated circuits.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例に示す回路図、第2図はこ
の実施例の出力部の寄生ダイオードを考慮した回路図、
第3図は第1図のCMOS集積回路の構造断面図、第4
図は従来のCMOS集積回路の出力部を示す回路図、第
5図は第4図の回路の応用例を示すブロック図、第6図
は第5図の回路の出力部の詳細回路図である。 図において、+1)はPチャネルM OS トランジス
タ、(2)はnチャネルMOSトランジスタ、(3)は
第、■の電源端子、(4)は第2の電源端子(接地端子
)、C31)はスイッチ素子としてのnチャネルM O
S )−ランジスタである。 なお、図中、同一符号は同一 または相当部分を示す。
FIG. 1 is a circuit diagram showing an embodiment of the present invention, FIG. 2 is a circuit diagram taking into account the parasitic diode of the output section of this embodiment,
Figure 3 is a cross-sectional view of the structure of the CMOS integrated circuit in Figure 1;
The figure is a circuit diagram showing the output section of a conventional CMOS integrated circuit, FIG. 5 is a block diagram showing an application example of the circuit in FIG. 4, and FIG. 6 is a detailed circuit diagram of the output section of the circuit in FIG. . In the figure, +1) is a P-channel MOS transistor, (2) is an n-channel MOS transistor, (3) is the second power supply terminal, (4) is the second power supply terminal (ground terminal), and C31) is the switch. n-channel MO as a device
S ) - transistor. In addition, the same symbols in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】 第1の電源と第2の電源との間にPチャネルMOSトラ
ンジスタと第1のnチャネルMOSトランジスタとが上
記PチャネルMOSトランジスタが第1の電源側にある
ように直列に接続された出力回路において、上記Pチャ
ネルMOSトランジスタと上記第1のnチャネルMOS
トランジスタとの間にスイッチ素子としての第2のnチ
ャネルMOSトランジスタを挿入し、 上記第2のnチャネルMOSトランジスタのソースを上
記PチャネルMOSトランジスタのドレインに、ドレイ
ンを上記第1のnチャネルMOSトランジスタのソース
に、ゲートを上記PチャネルMOSトランジスタのソー
ス及びバルクと共に上記第1の電源に接続し、n形半導
体基板内にP形ウェル領域を形成し、 上記P形ウェル領域内に出力回路を構成する第1のnチ
ャネルMOSトランジスタ及びスイッチ素子としての第
2のnチャネルMOSトランジスタを形成したことを特
徴とする相補形MOS集積回路。
[Claims] A P-channel MOS transistor and a first n-channel MOS transistor are connected in series between a first power source and a second power source such that the P-channel MOS transistor is on the first power source side. In the connected output circuit, the P channel MOS transistor and the first n channel MOS
A second n-channel MOS transistor as a switching element is inserted between the transistor and the second n-channel MOS transistor, the source of the second n-channel MOS transistor being the drain of the P-channel MOS transistor, and the drain being the first n-channel MOS transistor. A P-type well region is formed in the n-type semiconductor substrate, and an output circuit is configured in the P-type well region. 1. A complementary MOS integrated circuit comprising a first n-channel MOS transistor and a second n-channel MOS transistor as a switch element.
JP63261886A 1988-10-17 1988-10-17 Complementary type mos integrated circuit Pending JPH02106963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63261886A JPH02106963A (en) 1988-10-17 1988-10-17 Complementary type mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63261886A JPH02106963A (en) 1988-10-17 1988-10-17 Complementary type mos integrated circuit

Publications (1)

Publication Number Publication Date
JPH02106963A true JPH02106963A (en) 1990-04-19

Family

ID=17368131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63261886A Pending JPH02106963A (en) 1988-10-17 1988-10-17 Complementary type mos integrated circuit

Country Status (1)

Country Link
JP (1) JPH02106963A (en)

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