JPH0210828A - Etching device and method thereof - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an etching apparatus and method used in an etching process in a semiconductor manufacturing process.

Prior Art FIG. 3(a) shows a vertical cross-sectional view of the vicinity of the upper electrode of a conventional etching apparatus, and FIG. 3(b) shows the same view (a).
) shows a cross-sectional view of the surface of the upper electrode.

In FIG. 3(a), Φ), 301 is the chamber 30
2, an upper electrode 303 is a plurality of nozzle holes provided on the surface of the upper electrode 301, and 304 is a lower electrode provided facing the upper electrode 301 with a predetermined gap therebetween. , 305 is the wafer placed on the lower electrode 304, 306 is the ground on the upper electrode side, and 307 is the RF
A power supply 308 is a ground on the lower electrode side.

In the etching apparatus configured as described above, when the etching gas is supplied from the direction of the upper arrow, the upper electrode 30
Etching gas is radially blown out from a plurality of nozzle holes 303 provided on the surface of the wafer 305, etching the wafer 305 placed on the lower electrode 304.

Problems to be Solved by the Invention However, with the above-mentioned conventional configuration, if the nozzle hole is used for a long period of time, the nozzle hole will become clogged with deposits and the nozzle hole will become deformed due to the strain inherent in the material forming the upper electrode. This has the disadvantage that it is not possible to spray the wafer uniformly, making it impossible to uniformly etch the wafer.

The present invention solves the above-mentioned conventional problems, and even if the nozzle hole is clogged with deposits or deformed due to strain, etching gas can always be sprayed uniformly onto the wafer. An object of the present invention is to provide an ion etching device and method that can perform the same.

Means for Solving the Problems In order to achieve the above object, an etching apparatus of the present invention includes one electrode having a plurality of nozzle holes for blowing out etching gas, and an etching apparatus located with a predetermined gap from the one electrode. the other electrode, and a drive source for rotating the one electrode.

Even if the wafer is deformed due to stress or strain, the etching gas can always be sprayed uniformly onto the wafer by rotating the electrode.

EXAMPLE An example of the present invention will be described below with reference to the drawings.

FIG. 1(,) shows a vertical cross-sectional view of the vicinity of the upper electrode of the etching apparatus in the first embodiment of the present invention.
FIG. 1(b) shows a cross-sectional view of the surface of the upper electrode in FIG. 1(a).

In FIGS. 1(a) and (g), 101 is a drive shaft; 10
2 is a pulley, and 1o3 is a belt, which sequentially transmits rotational force obtained from an external motor to rotate the upper electrode 104. Reference numeral 105 is a poufre bearing provided at a portion where the upper electrode 104 and the chamber 106 are in contact with each other, and allows the upper mold if 04 to rotate smoothly.

Reference numeral 107 indicates a plurality of nozzle holes having the same center as the electrode and provided concentrically, and radially discharges the etching gas supplied from the direction of the arrow. One electrode is a lower electrode provided to face the upper electrode 104 with a predetermined gap therebetween, and a wafer 109 is placed thereon. 110 is a ground on the upper electrode side, 111 is an RF power source, and 112 is a ground on the lower electrode side.

The operation and etching method of the etching apparatus constructed as described above will be explained below.

First, after the upper electrode 104 is rotated steadily by a drive source such as a motor, etching gas is injected from the direction of the arrow. The injected etching gas passes through the inner tube of the upper electrode 104 and is blown out radially through a nozzle hole 107 provided in the upper electrode. Now, in the unlikely event that the nozzle hole 107 is partially closed for some reason, the etching blowout will be partially suppressed, but since the upper electrode 104 rotates, the surface of the wafer 109 will not be uniformly etched. Ru. Furthermore, since a plurality of nozzle holes 107 are provided concentrically, the uniformity of etching can be further improved.

A second embodiment of the present invention will be described below with reference to the drawings.

FIG. 2(a) shows a longitudinal cross-sectional view of the vicinity of the upper electrode of the etching apparatus according to the second embodiment of the present invention.
FIG. 2 Φ) shows a cross-sectional view of the surface of the upper electrode in FIG. 2(a). In Figures 2(a) and (b),
Reference numeral 207 designates a plurality of nozzle holes provided concentrically with centers different from those of the electrodes; the rest are shown in FIG. 1(a).

The configuration is similar to that in (b).

By providing multiple concentric nozzle holes in the rotatable upper electrode with centers different from those of the electrode as described above, etching gas can be uniformly sprayed onto wafers of different sizes. .

Effects of the Invention As described above, the present invention includes one electrode having a plurality of nozzle holes for blowing out etching gas, and the other electrode positioned with a predetermined gap from the one electrode. By providing a drive source for rotating the electrode, it is possible to realize an excellent etching apparatus and method that can uniformly spray an etching gas onto a sample to be etched.

[Brief explanation of the drawing]

FIG. 1(a) is a vertical cross-sectional view of the vicinity of the upper electrode of the etching apparatus according to the first embodiment of the present invention, FIG. 1(b) is a cross-sectional view of the surface of the upper electrode in FIG. Figure (a) is a vertical cross-sectional view of the vicinity of the upper electrode of an etching apparatus according to the second embodiment of the present invention, Figure 2 (b) is a cross-sectional view of the surface of the upper electrode in Figure (a), and Figure 3 3(a) is a vertical cross-sectional view of the vicinity of the upper electrode of a conventional etching apparatus, and FIG. 3(b) is a cross-sectional view of the surface of the upper electrode in FIG. 3(a). 104...Middle upper electrode, 1o end...Nozzle hole, 108...Lower electrode, 109...Name of wafer agent Patent attorney Toshio Nakao and others 1
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Claims (2)

[Claims] (1) A drive source that has one electrode having a plurality of nozzle holes for blowing out etching gas and another electrode located with a predetermined gap from the one electrode, and rotates the one electrode. An etching device characterized by being equipped with. (2) A sample to be etched is placed between one electrode having a plurality of nozzle holes for blowing out etching gas and the other electrode located with a predetermined gap from the one electrode, and then An etching method in which the sample to be etched is etched by rotating one electrode.