JPH02117959A - Sealing resin composition - Google Patents
Sealing resin compositionInfo
- Publication number
- JPH02117959A JPH02117959A JP26828788A JP26828788A JPH02117959A JP H02117959 A JPH02117959 A JP H02117959A JP 26828788 A JP26828788 A JP 26828788A JP 26828788 A JP26828788 A JP 26828788A JP H02117959 A JPH02117959 A JP H02117959A
- Authority
- JP
- Japan
- Prior art keywords
- formula
- bismaleimide
- resin
- formulas
- addition polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 10
- 238000007789 sealing Methods 0.000 title claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims abstract description 20
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229920003192 poly(bis maleimide) Polymers 0.000 claims abstract description 15
- 229920000642 polymer Polymers 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 125000003118 aryl group Chemical group 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 239000011256 inorganic filler Substances 0.000 claims abstract description 7
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 6
- 239000003054 catalyst Substances 0.000 claims abstract description 6
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 5
- 150000004984 aromatic diamines Chemical class 0.000 claims abstract description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000843 powder Substances 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 230000009477 glass transition Effects 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract description 2
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 6
- 239000012778 molding material Substances 0.000 description 6
- -1 4,4'-diaminodiphenyl ester Chemical class 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229940024545 aluminum hydroxide Drugs 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012757 flame retardant agent Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- HPTLEXMXHIALNF-UHFFFAOYSA-L platinum(2+) dichlorate Chemical compound Cl(=O)(=O)[O-].[Pt+2].Cl(=O)(=O)[O-] HPTLEXMXHIALNF-UHFFFAOYSA-L 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BAZXQZYWJSBDRG-UHFFFAOYSA-N pyrrole-2,5-dione;toluene Chemical compound CC1=CC=CC=C1.O=C1NC(=O)C=C1.O=C1NC(=O)C=C1 BAZXQZYWJSBDRG-UHFFFAOYSA-N 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はガラス転移点(以下Tgという)が高く、かつ
低応力である半導体封止用樹脂組成物に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a resin composition for semiconductor encapsulation that has a high glass transition point (hereinafter referred to as Tg) and low stress.
(従来技術)
現在半導体素子を封止する方法として、エポキシ樹脂成
形材料を用いトランスファー成形による樹脂封止が一般
的に行われている。(Prior Art) Currently, as a method for sealing semiconductor elements, resin sealing by transfer molding using an epoxy resin molding material is generally performed.
しかしながら、半導体素子の高集積化、デバイスの大型
フラット化、封止硬化物の薄肉化、基板への搭載に際し
ての表面実装化等が進み、これに伴い封止材料に要求さ
れる性能も大幅に変わって来つつある。However, as semiconductor elements become more highly integrated, devices become larger and flatter, cured encapsulation materials become thinner, and mounting on substrates becomes more surface-mounted, the performance required of encapsulation materials has significantly increased. Things are starting to change.
特に表面実装化に伴い半田耐熱性がクロースアップされ
てきている。Particularly with the shift to surface mounting, solder heat resistance has become a focus.
これらの問題に対処するには、硬化樹脂が低応力で、か
つTgが高X半田浴温度以上であることが望まれている
。To address these problems, it is desired that the cured resin has low stress and a Tg equal to or higher than the high-X solder bath temperature.
従来のエポキシ樹脂またはシリコーン変性エポキシ樹脂
ではこれらの性能を満たすことが困難である。It is difficult to meet these performance requirements with conventional epoxy resins or silicone-modified epoxy resins.
一方エポキシ樹脂に替わる高Tg樹脂としてビスマレイ
ミド系樹脂が注目されてきているが、この樹脂の硬化物
は弾性率が高く脆いため、ヒートサイクルテストにより
クラックを生じたり、デバイスとの密着性が悪かったり
、耐湿性に劣るという欠点があった。On the other hand, bismaleimide resin is attracting attention as a high Tg resin to replace epoxy resin, but the cured product of this resin has a high elastic modulus and is brittle, so it may crack during heat cycle tests or have poor adhesion to devices. It also had the disadvantage of poor moisture resistance.
(発明が解決しようとする課題)
本発明は従来のエポキシ樹脂またはシリコーン変性エポ
キシ樹脂の欠点である半田耐熱性を改良するため鋭意検
討を行いなされたものであり、その目的とするところは
高Tgであり、かつ低応力性を有している半導体封止用
樹脂組成物を提供するにある。(Problems to be Solved by the Invention) The present invention has been made through intensive studies to improve the soldering heat resistance, which is a drawback of conventional epoxy resins or silicone-modified epoxy resins, and its purpose is to It is an object of the present invention to provide a resin composition for semiconductor encapsulation which has the following properties and low stress properties.
(課題を解決するだめの手段)
本発明はビスマレイミドおよび/またはその誘導体と芳
香族ジアミンの反応によって得られるビスマレイミド系
樹脂(A)と下記式(1)で示されるハイドロジエンオ
ルガノポリンロキサンと〔■〕で示される多官能芳香族
ポリアリル化合物とを白金系触媒存在下で反応せしめて
得られる付加重合体(B)及び無機質充填材を必須成分
とする半導体封止用樹脂組成物である。(Means for Solving the Problems) The present invention relates to a bismaleimide resin (A) obtained by reacting bismaleimide and/or its derivative with an aromatic diamine, and a hydrogen organoporin loxane represented by the following formula (1). and a polyfunctional aromatic polyallyl compound represented by [■] in the presence of a platinum-based catalyst to obtain an addition polymer (B) and an inorganic filler as essential components, a resin composition for semiconductor encapsulation. .
(式中R,,R,はアルキル基またはフェニル基、nは
10〜200の整数)
(式中R1は水素原子、ハロゲン原子、水酸基またはア
ルキル基、
=so、 堤−0−
mは0〜10の整数)
本発明において用いられるビスマレイミド系樹脂は一般
式〔■〕で示される化合物である。(In the formula, R is an alkyl group or a phenyl group, n is an integer of 10 to 200) (In the formula, R1 is a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, =so, Tsutsumi-0-m is 0- (integer of 10) The bismaleimide resin used in the present invention is a compound represented by the general formula [■].
ただしn≧O,ml(iはO−nの整数)。However, n≧O, ml (i is an integer of O−n).
m*+++I’ns+x+Z1+ ff1l+l+
l、etはIまたはXは−CH2−、−〇−、−8o、
、−3−、−3−3−。m*+++I'ns+x+Z1+ ff1l+l+
l, et is I or X is -CH2-, -〇-, -8o,
, -3-, -3-3-.
またはベンゼン核どうしが直接結合していることを示す
。Or it shows that the benzene nuclei are directly bonded to each other.
Ylよ −CH,、−0−、−8O,、、S−、−、S
屹−5またはベンゼン核どうしが直接結合していること
を示すものであり、Yは上記各結合基の1種またはそれ
以上の結合基の混合でベンゼン核どうしが結合している
ことを示す。Yl -CH,, -0-, -8O,,,S-,-,S
This indicates that 屹-5 or benzene nuclei are directly bonded to each other, and Y indicates that benzene nuclei are bonded to each other by a mixture of one or more of the above-mentioned bonding groups.
RはH,CH,またはC,H5を示す。R represents H, CH, or C, H5.
これらの化合物としては、例えば4.4′−ジアミノジ
フェニルメタン、4.4’−ジアミノジフエニ工−テル
、3.3’−ジアミノジフェニルスルホン、2.2′−
ジ(p−アミノフェニル)プロパン、3゜4.3’、4
’−テトラアミ八ジフェニルメタンとが、アニリンとホ
ルムアルデヒドから得られるアニリン樹脂などの芳香族
ポリアミンをマレイミド化したものをあげることができ
る。Examples of these compounds include 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ester, 3,3'-diaminodiphenylsulfone, 2,2'-
Di(p-aminophenyl)propane, 3°4.3',4
'-Tetraamyptadiphenylmethane is a maleimide of an aromatic polyamine such as an aniline resin obtained from aniline and formaldehyde.
本発明に用いられるポリシロキサン−芳香族ポリアリル
化合物の付加重合体は白金系触媒存在下で反応せしめて
得られる反応生成物である。The polysiloxane-aromatic polyallyl compound addition polymer used in the present invention is a reaction product obtained by reaction in the presence of a platinum catalyst.
用いられるハイドロジェンオルガノボリシロキサンは下
記式(1〕で示されるポリシロキサンでありその重合度
は10〜200の範囲である。The hydrogenorganoborisiloxane used is a polysiloxane represented by the following formula (1), and its degree of polymerization is in the range of 10 to 200.
(式中R,,R,はアルキル基またはフェニル基、nは
10−200の整数)
重合度がIO以下の場合、硬化樹脂の低応力効果が低下
し、200以上では芳香族ポリアリル化合物とのハイド
ロシリル化反応が完結し難い。(In the formula, R,,R, is an alkyl group or a phenyl group, and n is an integer from 10 to 200.) If the degree of polymerization is less than IO, the low stress effect of the cured resin will decrease, and if it is more than 200, it will be difficult to combine with the aromatic polyallyl compound. Hydrosilylation reaction is difficult to complete.
更にポリシロキサンへの芳香族ポリアリル化合物の付加
量はポリシロキサン中のハイドロンリル基lWAに対し
、芳香族ポリアリル化合物中のアリル基が2〜10個が
好ましい。Further, the amount of the aromatic polyallyl compound added to the polysiloxane is preferably 2 to 10 allyl groups in the aromatic polyallyl compound per hydrolyl group lWA in the polysiloxane.
少なすぎると未反応のポリシロキサンが残存し、成形時
に金型曇りを起こし、また多すぎると低応力化に効果が
ない。If it is too small, unreacted polysiloxane will remain, causing mold fogging during molding, and if it is too large, it will not be effective in reducing stress.
尚、反応方法は適宜選択が可能であり、その際の触媒は
白金系触媒が良く、特に塩素酸白金の水和物のインプロ
パツール溶液が好んで用いられる。Incidentally, the reaction method can be appropriately selected, and a platinum-based catalyst is preferably used as a catalyst, and an inpropatol solution of a hydrate of platinum chlorate is particularly preferably used.
反応終了後は室温で液状の茶褐色の付加重合体が得られ
る。After the reaction is completed, a liquid brown addition polymer is obtained at room temperature.
このポリシロキサン−芳香族ポリアリル化合物の付加重
合体(B)はビスマレイミド系樹脂(A)100重量部
に対し10〜50重量部が好ましい。The polysiloxane-aromatic polyallyl compound addition polymer (B) is preferably used in an amount of 10 to 50 parts by weight per 100 parts by weight of the bismaleimide resin (A).
10重量部以下であれば低応力化に効果がなく、又50
重量部以上であればTgが低下してしまう。If it is less than 10 parts by weight, it is not effective in reducing stress;
If it is more than part by weight, Tg will decrease.
本発明に用いる無機充填材としてはシリカ粉末、アルミ
ナ、三酸化アンチモン、水酸化アルミニウム水和物、酸
化チタン等が挙げられ、これらを単独又は2種以上混合
して用いることが可能である。Examples of the inorganic filler used in the present invention include silica powder, alumina, antimony trioxide, aluminum hydroxide hydrate, and titanium oxide, and these can be used alone or in combination of two or more.
これら無機充填材のうち半導体封止材料組成物としては
シリカ粉末が好んで用いられる。Among these inorganic fillers, silica powder is preferably used as a semiconductor sealing material composition.
尚、無機充填材の配合量はビスマレイミド系樹脂(A)
に対して50〜4001ii部配合することが好ましい
。In addition, the blending amount of the inorganic filler is bismaleimide resin (A)
It is preferable to mix 50 to 4001ii parts with respect to the total amount.
50重量部以下では硬化樹脂の性能が不十分であり、4
00重量部以上であれば成形性が悪くなってしまい実用
に適さない。If it is less than 50 parts by weight, the performance of the cured resin is insufficient;
If it is more than 0.00 parts by weight, moldability will deteriorate and it will not be suitable for practical use.
又これらの必須成分以外のものとして成形材料化に際し
て硬化促進剤、滑剤、離燃化剤、離壓剤、ンランカンプ
リング剤等を適宜配合添加することが出来る。In addition to these essential components, curing accelerators, lubricants, flame retardant agents, release agents, run-camping agents, etc. can be added as appropriate when preparing the molding material.
本発明の半導体封止用樹脂組成物を成形材料として製造
する場合の一般的な方法としては、これらの必須成分に
各種添加剤を加えて均一に混合した組成物をニーダ−1
熱ロール等により混純処理をおこない、冷却後粉砕して
成形材料とする。A general method for producing the resin composition for semiconductor encapsulation of the present invention as a molding material is to add various additives to these essential components and mix the composition uniformly in a kneader.
The mixture is mixed and purified using hot rolls, etc., and after cooling, it is pulverized to form a molding material.
得られた成形材料を半導体の封止用として用いれば高T
gであり、しかも低応力特性の両立化がはかれ、非常に
信頼性のある封止用樹脂組成物を得ることが出来る。If the obtained molding material is used for encapsulating semiconductors, high T
It is possible to obtain an extremely reliable sealing resin composition that has both low stress properties and low stress properties.
(実施例)
参考例1 (ビスマレイミド系樹脂の合成)4.4−ジ
アミノジフェニルメタン(DDM)18重量部を150
’Oで加熱融解し、これを撹拌しなからN、N ’−4
,4’−’;フェニルメタンビスマレイミド(BMI)
82重量部を徐々に添加しビスマレイミド系樹脂(A)
を得た。(Example) Reference Example 1 (Synthesis of bismaleimide resin) 18 parts by weight of 4.4-diaminodiphenylmethane (DDM) was added to 150 parts by weight.
Heating and melting with 'O' and stirring this, then N, N '-4
,4'-'; phenylmethane bismaleimide (BMI)
Gradually add 82 parts by weight to make bismaleimide resin (A).
I got it.
得られた樹脂の融点は100°Cであった。The melting point of the resulting resin was 100°C.
参考例2(付加重合体の合成)
平均重合度150の両末端に水酸基をもつハイドロジエ
ンジメチルポリシロキサン(オイルD) 40重量部と
平均重合度50の両末端に水酸基をもつハイドロジェン
ボリンロキサン(オイルF)60!ffi部との混合物
に1重金%の塩化白金酸イソプロパツール溶液を2重量
部を添加した後80℃に加熱した。Reference Example 2 (Synthesis of addition polymer) 40 parts by weight of hydrogen dimethylpolysiloxane (Oil D) having an average degree of polymerization of 150 and having hydroxyl groups at both ends, and hydrogen borine loxane having an average degree of polymerization of 50 and having hydroxyl groups at both ends. (Oil F) 60! After adding 2 parts by weight of a 1% heavy metal chloroplatinic acid isopropanol solution to the mixture with part ffi, the mixture was heated to 80°C.
これに0.O′−ジアリルビスフェノールA15重量部
を1時間にわた2て滴下し、その後糸を100°Cに昇
温して反応を3時間続けた。0 for this. 15 parts by weight of O'-diallylbisphenol A were added dropwise over 2 hours over a period of 1 hour, after which the thread was heated to 100°C and the reaction continued for 3 hours.
冷却後粘度が25℃で12500cpsの付加重合体(
B)を得た。Addition polymer with a viscosity of 12,500 cps at 25°C after cooling (
B) was obtained.
実施例1
第1表に示す配合で、参考例1及び2によって得られた
ビスマレイミド系樹脂(A)と付加重合体(B)とシリ
カ粉末に硬化促進剤、アミノシラン、着色剤および離型
剤を配合し、熱ロールで混練し成形材料を得た。これを
トランスファー成形により180°c、 3分で成形し
さらに180℃、8時間ポストキュアーした。Example 1 With the formulation shown in Table 1, the bismaleimide resin (A) obtained in Reference Examples 1 and 2, the addition polymer (B), and silica powder were combined with a curing accelerator, aminosilane, colorant, and mold release agent. were blended and kneaded with hot rolls to obtain a molding material. This was molded by transfer molding at 180°C for 3 minutes and further post-cured at 180°C for 8 hours.
その特性を第1表に示す。Its characteristics are shown in Table 1.
比較例1.2
実施例1において付加重合体(B)の添加量を第1表に
示す量に替えて同様に成形して性能評価をおこなった。Comparative Example 1.2 Molding was performed in the same manner as in Example 1 except that the amount of addition polymer (B) added was changed to the amount shown in Table 1, and the performance was evaluated.
その結果を第1表に示す。The results are shown in Table 1.
比較例3
実施例1において付加重合体(B)をオルソクレゾール
型エポキシ樹脂に替えて同様に成形して性能評価をおこ
なった。その結果を第1表に示す。Comparative Example 3 Performance evaluation was performed in the same manner as in Example 1 except that the addition polymer (B) was replaced with an orthocresol type epoxy resin. The results are shown in Table 1.
(以下余白)
(発明の効果)
本発明による封止用樹脂組成物を用いた硬化樹脂は高T
gであるため封止体の耐半田クラック信頼性に優れ、か
つ低応力であり耐ヒートサイクル性に優れており半導体
素子封止用樹脂組成物として非常に信頼性の高い優れた
ものである。(The following is a blank space) (Effects of the invention) The cured resin using the sealing resin composition according to the present invention has a high T.
g, the sealing body has excellent solder crack resistance and reliability, and has low stress and excellent heat cycle resistance, making it an excellent and extremely reliable resin composition for semiconductor element sealing.
Claims (1)
と芳香族ジアミンとの反応により得られるビスマレイミ
ド系樹脂 (B)下記式〔 I 〕で示されるハイドロジエンオルガ
ノポリシロキサンと〔II〕で示される多官能芳香族ポリ
アリル化合物とを白金系触媒存在下で反応せしめて得ら
れる付加重合体 ▲数式、化学式、表等があります▼……〔 I 〕 (式中R_1、R_2はアルキル基またはフェニル基、
nは10〜200の整数) ▲数式、化学式、表等があります▼ (式中R_3は水素原子、ハロゲン原子、水酸基または
アルキル基、 R_4は−O−、−CH_2−、▲数式、化学式、表等
があります▼、 −SO_2− ▲数式、化学式、表等があります▼ mは0〜10の整数) (C)無機質充填材 を必須成分とする封止用樹脂組成物。(1) (A) Bismaleimide resin obtained by reaction of bismaleimide and/or its derivative with aromatic diamine (B) Hydrodiene organopolysiloxane represented by the following formula [I] and [II] Addition polymer obtained by reacting a polyfunctional aromatic polyallyl compound in the presence of a platinum-based catalyst ▲ Numerical formulas, chemical formulas, tables, etc. are available▼……[I] (In the formula, R_1 and R_2 are an alkyl group or a phenyl group,
n is an integer from 10 to 200) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (In the formula, R_3 is a hydrogen atom, halogen atom, hydroxyl group, or alkyl group, R_4 is -O-, -CH_2-, ▲ Numerical formulas, chemical formulas, tables, etc.) etc.▼, -SO_2- ▲Mathematical formulas, chemical formulas, tables, etc.▼m is an integer from 0 to 10) (C) A sealing resin composition containing an inorganic filler as an essential component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26828788A JPH02117959A (en) | 1988-10-26 | 1988-10-26 | Sealing resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26828788A JPH02117959A (en) | 1988-10-26 | 1988-10-26 | Sealing resin composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02117959A true JPH02117959A (en) | 1990-05-02 |
Family
ID=17456440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26828788A Pending JPH02117959A (en) | 1988-10-26 | 1988-10-26 | Sealing resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02117959A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05175262A (en) * | 1991-12-26 | 1993-07-13 | Hitachi Chem Co Ltd | Resin sealing semiconductor device |
-
1988
- 1988-10-26 JP JP26828788A patent/JPH02117959A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05175262A (en) * | 1991-12-26 | 1993-07-13 | Hitachi Chem Co Ltd | Resin sealing semiconductor device |
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