JPH02118068A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPH02118068A
JPH02118068A JP26946588A JP26946588A JPH02118068A JP H02118068 A JPH02118068 A JP H02118068A JP 26946588 A JP26946588 A JP 26946588A JP 26946588 A JP26946588 A JP 26946588A JP H02118068 A JPH02118068 A JP H02118068A
Authority
JP
Japan
Prior art keywords
target
film
substrate
gas
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26946588A
Other languages
Japanese (ja)
Inventor
Hideo Nikawa
二河　秀夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP26946588A priority Critical patent/JPH02118068A/en
Publication of JPH02118068A publication Critical patent/JPH02118068A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the infiltration of a sputtered gas ion rebounding from a target surface into a formed film on the surface of a substrate as impurities and to obviate the deterioration in the characteristic of the film by forming plural recesses on the target surface without flat face. CONSTITUTION:The substrate 4 is fixed to a substrate holder 3 in the vacuum vessel 1 of the sputtering device, and many recesses 8a are formed on the surface of the target 8. A sputtering gas, such as Ar is supplied into the vacuum vessel 1, a glow discharge is generated between the target 8 and the substrate holder 3 to produce plasma, the Ar ion is allowed to collide with the target 8 to deposit the sputtered atom 6 constituting the target 8 on the surface of the substrate 4, and a film is formed. Since the surface of the target 8 is not flat in this case, the energy of the Ar ion of the sputtering gas and secondary electron 7 from the target surface are scattered in the recesses 8a on the target surface and reduced, and the characteristic of the film on the substrate 4 is hardly deteriorated by the Ar ion and secondary electron.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、スパッタリング装置に関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a sputtering device.

（従来の技術） スパッタリング装置は、第４図に示したように。(Conventional technology) The sputtering apparatus is as shown in FIG.

真空容器１内を排気した後、スパッタ（放電）ガスを導
入し、プラズマを発生させ、スパッタ（放電）ガスイオ
ン５をターゲット２の表面に衝突させ、ターゲットを構
成するスパッタ原子６をたたき出し、基板ホルダー３上
に設置した基板４の上に膜を堆積するというものである
。前記スパッタ原子６以外にも、スパッタ（放電）ガス
イオン５がターゲット表面に入射した際に放出される二
次電子７やプラズマ中のスパッタ（放電）ガスイオン５
が直接基板に到達するが、そのエネルギーは小さいので
それ程影響はない。しかし、平担なターゲット表面で跳
反されたスパッタ（放電）ガスイオン５は、基板に高エ
ネルギーで到達して膜中に取り込まれ、膜特性に種々の
影響をおよぼす。After evacuating the inside of the vacuum container 1, a sputtering (discharge) gas is introduced to generate plasma, and the sputtering (discharge) gas ions 5 collide with the surface of the target 2 to knock out the sputtered atoms 6 constituting the target. A film is deposited on a substrate 4 placed on a holder 3. In addition to the sputtered atoms 6, secondary electrons 7 emitted when sputtered (discharged) gas ions 5 enter the target surface and sputtered (discharged) gas ions 5 in the plasma.
reaches the substrate directly, but its energy is small so it does not have much of an effect. However, the sputtering (discharge) gas ions 5 bounced off the flat target surface reach the substrate with high energy and are taken into the film, thereby exerting various effects on the film properties.

（発明が解決しようとする課題） このように、スパッタにおいては、スパッタ（放電）ガ
スイオンが平担なターゲット表面に入射した際、ターゲ
ット表面で跳反され、高エネルギーで基板に到達し、膜
中に不純物として取り込まれろ。このことによって膜に
応力が発生したり。(Problem to be solved by the invention) In this way, in sputtering, when sputtering (discharge) gas ions are incident on a flat target surface, they are bounced off the target surface, reach the substrate with high energy, and form a film. be taken in as an impurity. This causes stress in the membrane.

膜の電気抵抗率が高くなるほど膜特性に種々の影響を与
えるという問題があった。There has been a problem in that the higher the electrical resistivity of the film, the more it affects the film properties in various ways.

（１１１！題を解決するための手段） この問題点を解決するために１本発明は１表面に複数の
凹みを穿設したターゲットを備えたものである。(Means for Solving Problem 111!) In order to solve this problem, one aspect of the present invention includes a target having a plurality of recesses formed on one surface.

（作　用） 本発明によれば、ターゲット表面で跳反されるスパッタ
（放電）ガスイオンのエネルギーを低減することができ
、膜中に混入するスパッタ（放電）ガス粒子を減少させ
ることが可能となる。(Function) According to the present invention, it is possible to reduce the energy of sputter (discharge) gas ions rebounding on the target surface, and it is possible to reduce sputter (discharge) gas particles mixed into the film. Become.

（実施例） 第１図は１本発明の一実施例のスパッタリング装置の構
成を模式的に示したものであり、第４図と同一符号のも
のは同一のものを示し、また、８は−その表面に複数の
凹み８ａを穿設したターゲットである。(Embodiment) FIG. 1 schematically shows the configuration of a sputtering apparatus according to an embodiment of the present invention, in which the same reference numerals as in FIG. 4 indicate the same components, and 8 indicates - This target has a plurality of depressions 8a formed on its surface.

次に１本実施例の動作を説明する。ターゲット８に入射
、衝突したスパッタ（放電）ガスイオン５は、ターゲッ
トを構成するスパッタ原子６．二次電子７をたたき出す
、また、スパッタ（放電）ガスイオン自身もターゲット
８の表面で跳反し、基板４に到達する。そこで、第４図
のように平担なターゲット表面に入射し跳反されたガス
粒子は、高エネルギーで基板に到達するが、本発明のタ
ーゲット８のように、穿設した凹み８ａに入射したスパ
ッタ（放電）ガスイオン５は、凹み内で散乱され、エネ
ルギーを失う。Next, the operation of this embodiment will be explained. The sputtering (discharge) gas ions 5 that are incident on and collide with the target 8 are sputtered atoms 6. The secondary electrons 7 are ejected, and the sputtering (discharge) gas ions themselves also bounce off the surface of the target 8 and reach the substrate 4. Therefore, as shown in Fig. 4, the gas particles that are incident on the flat target surface and rebounded reach the substrate with high energy, but as in the target 8 of the present invention, gas particles that are incident on the drilled recess 8a. Sputter (discharge) gas ions 5 are scattered within the depression and lose energy.

例えば、スパッタ（放電）ガスとしてアルゴン（Ａｒ）
を用い、Ａｒガス圧力を変化させてタングステン（Ｗ）
膜を形成した時の膜中へのＡｒ混入量と膜応力をそれぞ
れ第２図及び第３図に示す０図中、破線は本発明の凹み
を穿設したターゲットを用いた場合、実線は通常の平担
なターゲットを用いた場合を表わしている。For example, argon (Ar) is used as the sputtering (discharge) gas.
tungsten (W) by changing the Ar gas pressure using
Figures 2 and 3 show the amount of Ar mixed into the film and the film stress when the film was formed, respectively. In the diagrams, the broken line indicates the amount of Ar mixed into the film and the stress of the film when the target with the recesses of the present invention is used, and the solid line indicates the normal value. This shows the case using a flat target.

第２図で見られるように、低いＡｒガス圧力では膜中へ
のＡｒ混入量が多く、Ａｒガス圧力が高くなるにつれて
、　ＩＩ’Ｊ中のＡ　ｒ　Ｑ入量は少なくなる。As seen in FIG. 2, at low Ar gas pressures, the amount of Ar mixed into the film increases, and as the Ar gas pressure increases, the amount of Ar Q mixed into II'J decreases.

これは低いガス圧力程、プラズマ中の粒子が少なく、タ
ーゲットで跳反されたスパッタ（放？１りガスイオンが
プラズマ中であまり散乱されずに、大きなエネルギーを
持って基板に到達するためであると考えられる。膜中に
混入したＡｒは、膜の格子を拡げ、膜に圧縮応力を発生
させる。したがって。This is because the lower the gas pressure, the fewer particles in the plasma, and the sputtered gas ions rebounded by the target are not scattered as much in the plasma and reach the substrate with high energy. It is thought that Ar mixed into the film expands the lattice of the film and generates compressive stress in the film.

第３図で見られるように膜中のＡｒ混入量が多い程、膜
応力は大きな圧縮応力を示すようになる。As seen in FIG. 3, the greater the amount of Ar mixed into the film, the greater the compressive stress in the film.

平担なターゲットを用いた場合よりも、凹みを穿設した
ターゲットを用いた場合の方が、膜中のＡ「混入量は少
なくなる。これは、ターゲットに入射したスパッタ（放
電）ガスイオンが、ターゲットに穿設した凹み内部で散
乱され、エネルギーを失ってから基板に到達するので、
膜中へ混入するＡｒｉが減少するためと考えられる。こ
のことにより、第３図で見られるように、ターゲットに
凹みを穿設した場合の方が膜応力は小さな値を示す上う
になる。When using a target with holes, the amount of A mixed into the film is smaller than when using a flat target.This is because sputtering (discharge) gas ions incident on the target , it is scattered inside the recess drilled in the target and reaches the substrate after losing energy.
This is thought to be because the amount of Ari mixed into the film is reduced. As a result, as shown in FIG. 3, the film stress exhibits a smaller value when a recess is formed in the target.

（発明の効果） 以上説明したように、本発明によれば、ターゲット表面
に入射し跳反されるスパッタ（放＠）ガスイオンをター
ゲットに穿設した凹み内部で散乱させることにより、そ
のエネルギーを減少させ、膜中へ混入するスパッタ（放
電）ガス粒子の麓を抑えることができ、スパッタ（放１
ｆｔ）ガス混入による膜特性への影響を低減することが
可能となる。(Effects of the Invention) As explained above, according to the present invention, sputtering (emitted) gas ions that are incident on the target surface and rebounding are scattered inside the recesses formed in the target, thereby reducing the energy of the sputtering gas ions. It is possible to reduce the amount of sputter (discharge) gas particles mixed into the film, and to reduce sputter (discharge) gas particles.
ft) It is possible to reduce the influence of gas contamination on film properties.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は１本発明の一実施例のスパッタリング装置の構
成を示す模式図、第２図は１本発明と従来のスパッタリ
ング装置によりタングステン膜を形成した時の膜中への
Ａｒガス混入量を示す図。 第：３図は、同膜応力を示す図、第４図は、従来のスパ
ッタリング装置の構成を示す模式図である。 １　・・・真空容器、　３　・・・基板ホルダー４　・
・・基板、　５　・・・スパッタ（放１りガスイオン、
　６　・・・スパッタ原子、　７・・・二次電子、　８
　・・・ターゲット、　　８ａ・・・凹み。 特許出願人　松下電子工業株式会社Fig. 1 is a schematic diagram showing the configuration of a sputtering apparatus according to an embodiment of the present invention, and Fig. 2 shows the amount of Ar gas mixed into the film when a tungsten film is formed using the sputtering apparatus of the present invention and the conventional sputtering apparatus. Figure shown. FIG. 3 is a diagram showing the film stress, and FIG. 4 is a schematic diagram showing the configuration of a conventional sputtering apparatus. 1...Vacuum container, 3...Substrate holder 4・
...Substrate, 5 ... Sputtering (released gas ions,
6...Sputtered atoms, 7...Secondary electrons, 8
...Target, 8a...dent. Patent applicant Matsushita Electronics Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 表面に複数の凹みを穿設したターゲットを備えたことを
特徴とするスパッタリング装置。A sputtering device characterized by having a target with a plurality of depressions on its surface.
JP26946588A 1988-10-27 1988-10-27 Sputtering device Pending JPH02118068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26946588A JPH02118068A (en) 1988-10-27 1988-10-27 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26946588A JPH02118068A (en) 1988-10-27 1988-10-27 Sputtering device

Publications (1)

Publication Number Publication Date
JPH02118068A true JPH02118068A (en) 1990-05-02

Family

ID=17472816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26946588A Pending JPH02118068A (en) 1988-10-27 1988-10-27 Sputtering device

Country Status (1)

Country Link
JP (1) JPH02118068A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5632869A (en) * 1990-08-30 1997-05-27 Sony Corporation Method of pretexturing a cathode sputtering target and sputter coating an article therewith
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
JP5377796B2 (en) * 2011-03-01 2013-12-25 シャープ株式会社 Sputtering target, manufacturing method thereof, and manufacturing method of thin film transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5632869A (en) * 1990-08-30 1997-05-27 Sony Corporation Method of pretexturing a cathode sputtering target and sputter coating an article therewith
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
JP5377796B2 (en) * 2011-03-01 2013-12-25 シャープ株式会社 Sputtering target, manufacturing method thereof, and manufacturing method of thin film transistor

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