JPH02122677A - Optical coupling semiconductor device - Google Patents
Optical coupling semiconductor deviceInfo
- Publication number
- JPH02122677A JPH02122677A JP63276723A JP27672388A JPH02122677A JP H02122677 A JPH02122677 A JP H02122677A JP 63276723 A JP63276723 A JP 63276723A JP 27672388 A JP27672388 A JP 27672388A JP H02122677 A JPH02122677 A JP H02122677A
- Authority
- JP
- Japan
- Prior art keywords
- light
- thin film
- film sheet
- insulating thin
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 230000003287 optical effect Effects 0.000 title claims abstract description 9
- 230000008878 coupling Effects 0.000 title claims abstract 3
- 238000010168 coupling process Methods 0.000 title claims abstract 3
- 238000005859 coupling reaction Methods 0.000 title claims abstract 3
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims abstract description 20
- 230000005540 biological transmission Effects 0.000 claims abstract description 14
- 229920000728 polyester Polymers 0.000 claims abstract description 9
- 238000002834 transmittance Methods 0.000 claims abstract description 9
- 239000003822 epoxy resin Substances 0.000 claims abstract description 8
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 8
- 239000002985 plastic film Substances 0.000 claims abstract description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 abstract description 2
- 238000003780 insertion Methods 0.000 abstract description 2
- 230000037431 insertion Effects 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、発光素子と受光素子との間の絶縁耐圧の信頼
性を高めた光結合半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optically coupled semiconductor device with improved reliability of dielectric strength between a light emitting element and a light receiving element.
従来の技術 以下に、従来の光結合半導体装置について説明する。Conventional technology A conventional optically coupled semiconductor device will be described below.
第３図は、従来の光結合半導体装置の断面図で、リード
１に発光素子２が、リード３に受光素子４が、それぞれ
、相対向してマウントされている。発光素子２とリード
１との間にはワイヤー５が、また、受光素子４とリード
３との間にはワイヤー６が、それぞれ、ボンディングさ
れている。FIG. 3 is a sectional view of a conventional optically coupled semiconductor device, in which a light emitting element 2 is mounted on a lead 1, and a light receiving element 4 is mounted on a lead 3, facing each other. A wire 5 is bonded between the light emitting element 2 and the lead 1, and a wire 6 is bonded between the light receiving element 4 and the lead 3.
そして、発光素子２、受光素子４、ワイヤー５゜６およ
びリード１，３を、透過率の良好な一次モールド樹脂７
により一体化しており、さらに前記一次モールド樹脂７
を外部光を遮断するための黒色の二次モールド樹脂８に
より包囲している。入出方間絶縁耐圧を高めるために、
前記一次モールド樹脂７において、ポリイミドやＦＥＰ
（四フッ化エチレンー六フッ化エチレン共重合体）の
絶縁性薄膜シート９を前記、発光素子２と受光素子４と
の間を結ぶ光伝達路の光路を横切るような位置に設けて
いる。但し、前記絶縁性薄膜シート９は透過率が７５％
程度とおちるため、光の伝達効率を高めるために光透過
用の開口が設けられている。第４図は絶縁性薄膜シート
９の平面形状を示す図で、絶縁性薄膜シート９には光透
過用の開口１０が設けられている。The light emitting element 2, the light receiving element 4, the wire 5.6 and the leads 1 and 3 are then molded into a primary mold resin 7 with good transmittance.
The primary mold resin 7
is surrounded by a black secondary mold resin 8 to block external light. In order to increase the insulation voltage between input and output,
In the primary mold resin 7, polyimide or FEP is used.
An insulating thin film sheet 9 of (tetrafluoroethylene-hexafluoroethylene copolymer) is provided at a position crossing the optical path of the optical transmission path connecting the light emitting element 2 and the light receiving element 4. However, the transmittance of the insulating thin film sheet 9 is 75%.
Therefore, a light transmission aperture is provided to increase the light transmission efficiency. FIG. 4 is a diagram showing the planar shape of the insulating thin film sheet 9, and the insulating thin film sheet 9 is provided with an opening 10 for light transmission.
発明が解決しようとする課題
上記従来例の構成では、絶縁性薄膜シートに光透過用の
開口を加工するのに手間がかかるという問題があった。Problems to be Solved by the Invention The configuration of the conventional example described above has a problem in that it takes time and effort to process the openings for light transmission in the insulating thin film sheet.
また、絶縁耐圧を高めるためには開口は極力小さ（する
必要があるが、樹脂モールド時の絶縁性薄膜シートのず
れによっては、発光素子と受光素子との間を結ぶ光伝達
路の光路をさえぎってしまうという問題があった。In addition, in order to increase the dielectric strength, the opening must be as small as possible, but depending on the misalignment of the insulating thin film sheet during resin molding, the optical path of the optical transmission path connecting the light emitting element and the light receiving element may be blocked. There was a problem with this.
本発明は、上記従来の問題点を解決するもので、絶縁性
薄膜シートに光透過用の開口を設けることなく、かつ発
光素子と受光素子との間の光伝達の良好な光結合半導体
装置を提供することを目的とする。The present invention solves the above-mentioned conventional problems, and provides an optically coupled semiconductor device with good light transmission between a light emitting element and a light receiving element without providing an opening for light transmission in an insulating thin film sheet. The purpose is to provide.
課題を解決するための手段
この目的を達成するために本発明の光結合半導体装置に
おいては、透過率が良好で、かつ電気的に絶縁性を有す
る三層構造薄膜シートを発光素子と受光素子間を結ぶ光
伝達路の光路を横切るような位置に設け、かつ三層構造
絶縁性薄膜シートに、エポキシ系樹脂とその両面にポリ
エステル系プラスチックシートを貼り合わせ、厚さを５
０〜２００μｍに設定したものを使用した構成を有して
いる。Means for Solving the Problems In order to achieve this object, in the optically coupled semiconductor device of the present invention, a three-layer thin film sheet having good transmittance and electrical insulation is used between the light emitting element and the light receiving element. The epoxy resin and polyester plastic sheets are bonded to the three-layer insulating thin film sheet, and the thickness is 5.
It has a configuration in which the thickness is set to 0 to 200 μm.
作用
この構成によって、絶縁性薄膜シートに開口を加工する
手間もかからな（なる上、発光素子と受光素子との間の
光伝達も良好で、入出力間絶Ｂ耐圧も高めることができ
る。Function: With this configuration, it is not necessary to process openings in the insulating thin film sheet (in addition, the light transmission between the light emitting element and the light receiving element is good, and the input/output breakdown voltage B can also be increased.
実施例
υ下、本発明の一実施例について、図面を参照しながら
説明する。Embodiment υ Below, an embodiment of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例における光結合半導体装置の
断面図を示すものである。第１図において、１１．１２
はリード、１３は発光素子、１４は受光素子、１５．１
６はワイヤー １７は三層構造絶縁性薄膜シート、１８
は一次モールド樹脂、１９は二次モールド樹脂である。FIG. 1 shows a sectional view of an optically coupled semiconductor device according to an embodiment of the present invention. In Figure 1, 11.12
is a lead, 13 is a light emitting element, 14 is a light receiving element, 15.1
6 is a wire, 17 is a three-layer insulating thin film sheet, 18
1 is a primary mold resin, and 19 is a secondary mold resin.
リード１１に発光素子１３を、リード１２に受光素子１
４を相対向してマウントしである。発光素子１３とリー
ド１１との間にはワイヤー１５が、受光素子１４とリー
ド１２との間にはワイヤー１６が、それぞれボンディン
グされている。そして発光素子１３．受光素子１４、リ
ード１１゜１２、ワイヤー１５．１６、及び三層構造絶
縁性薄膜シート１７を、透過率の良好なエポキシ系一次
モールド樹脂１８により一体化しである。さらに前記一
次モールド樹脂１８への外部光を遮断するための黒色の
二次モールド樹脂１９で包囲しである。The light emitting element 13 is attached to the lead 11, and the light receiving element 1 is attached to the lead 12.
4 are mounted facing each other. A wire 15 is bonded between the light emitting element 13 and the lead 11, and a wire 16 is bonded between the light receiving element 14 and the lead 12. and light emitting element 13. The light receiving element 14, the leads 11 and 12, the wires 15 and 16, and the three-layer insulating thin film sheet 17 are integrated using an epoxy primary mold resin 18 with good transmittance. Further, the primary mold resin 18 is surrounded by a black secondary mold resin 19 for blocking external light.
ここで前記三層構造絶縁性薄膜シート１７としては、ポ
リエステルシートをエポキシ系の樹脂により張り合わせ
た三層構造シートを使用している。第２図に三層構造絶
縁性薄膜シート１７の断面を示す。２０．２１はポリエ
ステルシート、２２はエポキシ系樹脂である。Here, as the three-layer structure insulating thin film sheet 17, a three-layer structure sheet made of polyester sheets laminated with epoxy resin is used. FIG. 2 shows a cross section of the three-layer insulating thin film sheet 17. 20 and 21 are polyester sheets, and 22 is an epoxy resin.
三層構造でしかも開口等がないため、入出力量絶縁耐圧
は５ＫＶ以上と高い。それでいて、厚さも、８０μｍ程
度と薄（、透過率も９８％程度（三層構造絶縁性薄膜シ
ートのない状態を１００％）あり、前記発光素子１３と
受光素子１４との間の光伝達は極めて良好である。Since it has a three-layer structure and has no openings, the input/output dielectric strength is as high as 5KV or more. However, the thickness is as thin as about 80 μm (and the transmittance is about 98% (100% without the three-layer insulating thin film sheet), and light transmission between the light emitting element 13 and the light receiving element 14 is extremely low. In good condition.
また、三層構造絶縁性薄膜シートの透過率の温度（Ｔａ
＝１５０℃、ｔ＝５００ｈ）に対する経時変化も１％程
度であり問題ない。さらに三層構造の絶縁物としたこと
により、国際安全規格ｌＥＣ３８０や各国安全規格（た
とえばＶＤＥＯ８０６）をも十分満足する。In addition, the transmittance temperature (Ta
The change over time (=150°C, t=500h) is also about 1%, which is no problem. Furthermore, by using an insulator with a three-layer structure, it fully satisfies the international safety standard 1EC380 and the safety standards of each country (for example, VDEO806).
発明の効果
本発明は、゛三層構造絶縁性薄膜シートを、エポキシ系
樹脂とその両面にポリエステル系プラスチックシートを
貼り合わせた三層構造の薄膜シートで構造し、かつその
厚さを５０〜２００μｍに設定したことにより、絶縁性
薄膜シートの加工および、挿入を容易にし、かつ光伝達
も極めて良好で、入出力量絶縁耐圧も高い、優れた光結
合半導体装置を実現できるものである。Effects of the Invention The present invention consists of a three-layer insulating thin film sheet consisting of an epoxy resin and a polyester plastic sheet laminated on both sides, and the thickness of the three-layer insulating thin film sheet is 50 to 200 μm. By setting this, it is possible to realize an excellent optically coupled semiconductor device that facilitates processing and insertion of the insulating thin film sheet, has extremely good optical transmission, and has high input/output dielectric strength.
第１図は本発明一実施例の光結合半導体装置のでの絶縁
性薄膜シートの平面図である。
１・・・・・・リード、２・・・・・・発光素子、３・
・・・・・リード、４・・・・・・受光素子、５・・・
・・・ワイヤー、６・・・・・・ワイヤー、７・・・・
・・一次モールド樹脂、８・・・・・・二次モールド樹
脂、９・・・・・・絶縁性薄膜シート、１０・・・・・
・開口、１１・・・・・・リード、１２・・・・・・リ
ード、１３・・・・・・発光素子、１４・・・・・・受
光素子、１５・・・・・・ワイヤー、１６・・・・・・
ワイヤー、１７・・・・・・三層構造絶縁性薄膜シート
、１８・・・・・・一次モールド樹脂、１つ・・・・・
・二次モールド樹脂、２０・・・・・・ポリエステルシ
ート、２１・・・・・・ポリエステルシート、２２・・
・・・・エポキシ系樹脂。
代理人の氏名 弁理士 粟野重孝 ほか１名第
図
第
図FIG. 1 is a plan view of an insulating thin film sheet of an optically coupled semiconductor device according to an embodiment of the present invention. 1...Lead, 2...Light emitting element, 3.
...Lead, 4...Light receiving element, 5...
...Wire, 6...Wire, 7...
...Primary mold resin, 8...Secondary mold resin, 9...Insulating thin film sheet, 10...
・Opening, 11... Lead, 12... Lead, 13... Light emitting element, 14... Light receiving element, 15... Wire, 16...
Wire, 17...Three-layer insulating thin film sheet, 18...Primary mold resin, 1 piece...
・Secondary mold resin, 20...polyester sheet, 21...polyester sheet, 22...
...Epoxy resin. Name of agent: Patent attorney Shigetaka Awano and one other person
Claims (1)
記発光素子と受光素子とを共に包囲し、一体化した透過
率の良好な一次モールド樹脂と、前記一次モールド樹脂
を包囲して外部光を遮断するための黒色の二次モールド
樹脂と、前記発光素子と受光素子間を結ぶ光伝達路の光
路を横切るような位置に設けた三層構造絶縁性薄膜シー
トとを備え、前記三層構造絶縁性薄膜シートを、エポキ
シ系樹脂とその両面にポリエステル系プラスチックシー
トを貼り合わせた三層構造の薄膜シートで構成し、かつ
、その厚さを５０〜２００μｍに設定したことを特徴と
する光結合半導体装置。A light-emitting element, a light-receiving element provided opposite to the light-emitting element, a primary molding resin that surrounds the light-emitting element and the light-receiving element and has good transmittance, and a primary molding resin that surrounds the primary molding resin and absorbs external light. and a three-layer structure insulating thin film sheet provided at a position crossing the optical path of the light transmission path connecting the light-emitting element and the light-receiving element. An optical coupling characterized in that the insulating thin film sheet is composed of a three-layer thin film sheet made of an epoxy resin and a polyester plastic sheet laminated on both sides, and the thickness is set to 50 to 200 μm. Semiconductor equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63276723A JPH02122677A (en) | 1988-11-01 | 1988-11-01 | Optical coupling semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63276723A JPH02122677A (en) | 1988-11-01 | 1988-11-01 | Optical coupling semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02122677A true JPH02122677A (en) | 1990-05-10 |
Family
ID=17573439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63276723A Pending JPH02122677A (en) | 1988-11-01 | 1988-11-01 | Optical coupling semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02122677A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009021333A (en) * | 2007-07-11 | 2009-01-29 | Nec Electronics Corp | Method of manufacturing optical coupling apparatus, and optical coupling apparatus |
| US10400375B2 (en) | 2015-11-26 | 2019-09-03 | Bernina International Ag | Accessories box for a sewing machine |
| WO2023068149A1 (en) * | 2021-10-20 | 2023-04-27 | ローム株式会社 | Semiconductor device |
-
1988
- 1988-11-01 JP JP63276723A patent/JPH02122677A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009021333A (en) * | 2007-07-11 | 2009-01-29 | Nec Electronics Corp | Method of manufacturing optical coupling apparatus, and optical coupling apparatus |
| US10400375B2 (en) | 2015-11-26 | 2019-09-03 | Bernina International Ag | Accessories box for a sewing machine |
| WO2023068149A1 (en) * | 2021-10-20 | 2023-04-27 | ローム株式会社 | Semiconductor device |
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