JPH02123706A - High frequency coil and manufacture thereof - Google Patents
High frequency coil and manufacture thereofInfo
- Publication number
- JPH02123706A JPH02123706A JP27813188A JP27813188A JPH02123706A JP H02123706 A JPH02123706 A JP H02123706A JP 27813188 A JP27813188 A JP 27813188A JP 27813188 A JP27813188 A JP 27813188A JP H02123706 A JPH02123706 A JP H02123706A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductor
- coil
- coil conductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004020 conductor Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000001312 dry etching Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 abstract description 18
- 229910052751 metal Inorganic materials 0.000 abstract description 18
- 229910052709 silver Inorganic materials 0.000 abstract description 4
- 229910052804 chromium Inorganic materials 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 229910052763 palladium Inorganic materials 0.000 abstract description 3
- 229910052719 titanium Inorganic materials 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 68
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Coils Or Transformers For Communication (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、基板上にコイル導体を形成してなる高周波コ
イルに関し、特にコイル導体の輻及び隣合うコイル導体
の間隔を小さくすることによりコイルの小型化をはかり
、かつコイル導体の厚みを大きくすることによりコイル
のＱを向上できるようにした構造及びその製造方法に関
する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a high-frequency coil formed by forming a coil conductor on a substrate, and in particular to a high-frequency coil formed by forming a coil conductor on a substrate. The present invention relates to a structure in which the Q of the coil can be improved by reducing the size of the coil and increasing the thickness of the coil conductor, and a method for manufacturing the same.
従来から、コイルとして、金属導体を螺旋状に巻回して
なる空心コイル及びフェライトやアルミナ等のボビンに
巻線を施してなるボビン巻線コイル等がある。しかしこ
の両コイルは形状が大きく。2. Description of the Related Art Conventionally, coils include air-core coils formed by spirally winding a metal conductor, and bobbin-wound coils formed by winding a wire around a bobbin made of ferrite, alumina, or the like. However, both coils have large shapes.
特性が不安定であることから、高周波領域では採用でき
ない、これに対して絶縁体基板の表面に金属薄膜からな
る帯状のコイル導体を形成してなる高周波コイルは、部
品形状を小型化できるとともに、マイクロ波帯の高周波
領域に採用できる。この高周波コイルを製造する場合は
、従来、以下の方法が採用されている０例えばガラス、
セラミックス製基板の表面全面にスパッタリングあるい
は蒸着法等によりＡｇ等の金属薄膜を形成し、該薄膜の
上面にコイルパターンに応じた形状のレジスト膜を形成
し、これにより上記薄膜の不要部分をウェットエツチン
グ（化学エツチング）により除去してコイル導体を形成
する。Due to its unstable characteristics, it cannot be used in the high frequency range.In contrast, high frequency coils, which are made by forming a band-shaped coil conductor made of a thin metal film on the surface of an insulating substrate, can reduce the size of the component and Can be used in the high frequency range of the microwave band. When manufacturing this high frequency coil, the following methods have been conventionally adopted.
A thin film of metal such as Ag is formed on the entire surface of a ceramic substrate by sputtering or vapor deposition, a resist film with a shape corresponding to the coil pattern is formed on the top of the thin film, and unnecessary parts of the thin film are wet-etched. (chemical etching) to form a coil conductor.
ところで、上記従来の高周波コイルにおいては、コイル
導体をスパッタリング等の薄膜技術により形成すること
から、このコイル導体の厚みが薄い分導体抵抗が大きく
なり、Ｑが低いという問題があり、このＱの向上が要請
されている。By the way, in the above-mentioned conventional high-frequency coil, since the coil conductor is formed by thin film technology such as sputtering, there is a problem that the conductor resistance is large due to the thin thickness of the coil conductor, and the Q is low. is requested.
ここで、上記Ｑを向上させるには、コイル導体の幅ある
いは厚みの少なくとも一方を大きくして導体抵抗を小さ
くしてやればよいことが知られている。しかし、コイル
導体の幅を大きくすれば、コイル形状が大きくなってし
まうという別の問題が発生して好ましくない、そこで、
コイル導体の厚みのみを大きくすること、すなわち上記
薄膜技術により形成されたコイル導体の上面に、さらに
コイル導体を重ねて形成して厚みを大きくすることが考
えられる。しかしながら、線幅１間隔が数十μｍと非常
に細いコイル導体の上面に寸法精度よく同一のコイル導
体を形成することは困難である。Here, it is known that in order to improve the above-mentioned Q, the conductor resistance can be reduced by increasing at least one of the width and thickness of the coil conductor. However, if the width of the coil conductor is increased, another problem arises in that the coil shape becomes larger, which is not desirable.
It is conceivable to increase only the thickness of the coil conductor, that is, to increase the thickness by further forming a coil conductor overlappingly on the upper surface of the coil conductor formed by the above-mentioned thin film technique. However, it is difficult to form the same coil conductor with high dimensional accuracy on the upper surface of a very thin coil conductor with a line width of several tens of μm.
ここで、本件発明者らは、予め大きなＱが得られるよう
に厚みの大きな導体膜を形成しておき、これをウエット
エソチクングしてコイル導体を形成する方法を検討した
。しかしながら、導体膜の上面にコイル導体に応じた形
状のレジスト膜を形成した後、これを薬品溶液中に浸漬
してエツチングするウェットエツチングでは、コイル導
体のエツジ部分や厚み方向の側面が侵食されてギザギザ
になり易く、加工精度が悪化するため、例えばコイル導
体の幅を１０８ｍに設計した場合、コイル導体の厚みを
２μｍより太き（することができなかった、これを、コ
イル導体の幅と厚みの関係で示すと、幅と厚みの比率（
厚み／暢）を０．２以上にすることができなかった。つ
まり、ウェットエツチングによる方法では、コイル導体
の厚みを大きくしてＱを太き（するという目的は達成で
きないのである。Here, the inventors of the present invention have studied a method of forming a thick conductor film in advance so as to obtain a large Q, and wet etching this to form a coil conductor. However, in wet etching, in which a resist film with a shape corresponding to the coil conductor is formed on the top surface of the conductor film and then etched by immersing it in a chemical solution, the edges and sides of the coil conductor in the thickness direction are eroded. For example, if the width of the coil conductor is designed to be 108 m, the thickness of the coil conductor could not be made thicker than 2 μm. The ratio of width to thickness (
thickness/smoothness) could not be made 0.2 or more. In other words, the wet etching method cannot achieve the purpose of increasing the thickness of the coil conductor and increasing the Q value.
本発明の目的は、上記厚膜化した導体膜を精度良く加工
できるエツチング方法を見出し、コイルの小型化をはか
り、かつＱを向上できる高周波コイル及びその製造方法
を提供することにある。An object of the present invention is to find an etching method that can process the thickened conductive film with high precision, and to provide a high-frequency coil that can reduce the size of the coil and improve Q, and a method for manufacturing the same.
そこで、本願第１項の発明は、基板の表面に導体膜を形
成し、該導体膜の不要部分をドライエツチングにより除
去して幅と厚みの比率が０．２以上５．０以下のコイル
導体を形成したことを特徴とする高周波コイルである。Therefore, the invention of item 1 of the present application forms a conductor film on the surface of a substrate, and removes unnecessary portions of the conductor film by dry etching to form a coil conductor with a width-to-thickness ratio of 0.2 to 5.0. This is a high-frequency coil characterized by forming a
また、本願第２項の発明は、上記高周波コイルの製造方
法であって、基板の表面に導体膜を形成し、該導体膜の
表面を覆うように上記基板の上面にレジスト膜を形成し
、該レジスト膜の不要部分をエツチング法により除去し
てコイル導体に対応するマスクを形成し、しかる後該マ
スクの開口部分の導体膜をドライエツチング法により除
去して幅と厚みの比率が０．２以上５．０以下のコイル
導体を形成したことを特徴としている。In addition, the invention of item 2 of the present application is a method for manufacturing the above-mentioned high-frequency coil, which comprises: forming a conductor film on the surface of the substrate; forming a resist film on the upper surface of the substrate so as to cover the surface of the conductor film; An unnecessary portion of the resist film is removed by an etching method to form a mask corresponding to the coil conductor, and then the conductor film in the opening portion of the mask is removed by a dry etching method so that the width to thickness ratio is 0.2. The present invention is characterized in that a coil conductor having a diameter of 5.0 or less is formed.
ここで、上記ドライエツチングとしては、イオンビーム
エツチング、スバフタエッチング、プラズマエツチング
が採用できる。Here, as the dry etching, ion beam etching, baffle etching, and plasma etching can be employed.
また、上記導体膜の形成方法としては、スパッタリング
、蒸着、イオンブレーティング、あるいは電解、無電解
メツキ法が採用でき、これらの方法により一層、あるい
は複数層からなる導体膜を形成すればよい。Further, as a method for forming the conductive film, sputtering, vapor deposition, ion blating, electrolytic or electroless plating methods can be employed, and a conductive film consisting of one layer or a plurality of layers may be formed by these methods.
さらに、本発明の高周波コイルには、基板上にコイル導
体及び′ｈ＠縁膜を一層だけ形成してなる単層のもの、
コイル導体と絶縁膜を交互に積層してなる多層のものが
含まれる。Furthermore, the high-frequency coil of the present invention includes a single-layer coil in which only one layer of a coil conductor and a rim film is formed on a substrate;
Includes multilayered coil conductors and insulating films that are alternately laminated.
さらにまた、本発明のコイル導体の形状としては、例え
ばスパイラルタイプ、ミアンダタイプ等が考えられ、特
に限定されるものではない。Furthermore, the shape of the coil conductor of the present invention may be, for example, a spiral type, a meander type, etc., and is not particularly limited.
本発明に係る高周波コイル及びその製造方法によれば、
基板に形成された導体膜の不要部分を、ドライエツチン
グにより除去してコイル導体を形成したので、ウェット
エツチングによる場合の加工精度の悪化を回避でき、寸
法精度が高く、かつ幅に対して厚みの大きなコイル導体
を形成でき、小型でかつＱの大きなコイルを形成するこ
とができる。このドライエツチング法は、導体膜の不要
部分を薬品溶液で溶かすという方法ではなく、例えば不
活性ガス、イオン等を打ち込んで削り取る方法であるか
ら、高い加工精度が得られる。その結果、幅と厚みの比
率を０．２以上に形成した場合にも、厚み方向の側面を
精度良く垂直にでき、導体抵抗を小さ（してＱを向上で
きる。ただし、幅と厚みの比率が５．０を趨えると、コ
イル導体の形成は困難である。According to the high frequency coil and the manufacturing method thereof according to the present invention,
Since the coil conductor was formed by removing unnecessary parts of the conductor film formed on the substrate by dry etching, it is possible to avoid deterioration in processing accuracy that would be caused by wet etching, and the dimensional accuracy is high and the thickness is small relative to the width. A large coil conductor can be formed, and a small coil with a large Q can be formed. This dry etching method does not involve dissolving the unnecessary portions of the conductor film with a chemical solution, but instead removes them by injecting inert gas, ions, etc., so that high processing accuracy can be obtained. As a result, even when the width to thickness ratio is 0.2 or more, the sides in the thickness direction can be made vertical with high precision, and the conductor resistance can be reduced (and the Q can be improved. However, the width to thickness ratio When the value exceeds 5.0, it is difficult to form a coil conductor.
以下、本発明の実施例を図について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図ないし第３図は本発明の一実施例による高周波コ
イル、及びその製造方法を説明するための図である。FIGS. 1 to 3 are diagrams for explaining a high-frequency coil and a manufacturing method thereof according to an embodiment of the present invention.
まず、本願第１項の発明の一実施例による高周波コイル
の構造について説明する。First, the structure of a high frequency coil according to an embodiment of the invention described in item 1 of the present application will be described.
絶縁膜の導体表面より上側部分を除去した状態を示す第
１図において、ｌは本実施例のチンプ型の高周波コイル
であり、これはガラス又はセラミックスからなる絶縁体
基［２の上面の中央部に、膜厚２〜５０μｍ、線幅１０
μｍ１間隔ＩＯμｍの金属膜からなるスパイラル状のコ
イル導体４をパターン形成するとともに、上記基板２上
面の左、右縁部に端子電極３ａ、３ｂを形成して構成さ
れている。また、上記コイル導体４の外端部４ａは図面
左側の端子電極３ａに接続されており、内端部４ｂは後
述するリード電極８を介して図面右側の端子電極３ｂに
接続されている。In FIG. 1, which shows a state in which the upper part of the insulating film is removed from the conductor surface, l is the chimp-type high-frequency coil of this embodiment, and this is the center part of the upper surface of the insulating base [2] made of glass or ceramics. , film thickness 2 to 50 μm, line width 10
It is constructed by patterning a spiral coil conductor 4 made of a metal film with an interval of 1 μm and IO μm, and forming terminal electrodes 3a and 3b on the left and right edges of the upper surface of the substrate 2. The outer end 4a of the coil conductor 4 is connected to a terminal electrode 3a on the left side of the drawing, and the inner end 4b is connected to a terminal electrode 3b on the right side of the drawing via a lead electrode 8, which will be described later.
上記コイル導体４及び端子電極３ａ、３ｂは、上記基板
２の上面に、Ｔｉ、Ｃｒ、Ｐｄ等からなる金属膜、及び
これの表面にＮｉ、Ｃｕ、Ａｇ。The coil conductor 4 and the terminal electrodes 3a, 3b are formed by a metal film made of Ti, Cr, Pd, etc. on the upper surface of the substrate 2, and a metal film made of Ti, Cr, Pd, etc. on the surface thereof.
Ａ１等からなる金属膜を蒸着、スパッタリングあるいは
イオンブレーティング等により形成し、さらに該金属膜
の表面に電解、又は無電解メツキによりＡｇ、Ｃｕ、Ａ
ｕ等を被覆して厚さが２μｍ以上になるように導体膜を
形成し、この導体膜の不要部分をドライエツチングによ
り除去して形成されたものである。A metal film made of A1, etc. is formed by vapor deposition, sputtering, ion blating, etc., and then Ag, Cu, A, etc. are formed on the surface of the metal film by electrolysis or electroless plating.
A conductor film is formed to have a thickness of 2 .mu.m or more covering the conductor film, and unnecessary portions of the conductor film are removed by dry etching.
また、上記コイルの断面を示す第２図において、上記基
板２の各端子電極３ａ、３ｂを除くコイル導体４の上面
にはポリイミドあるいはポリアミド等からなる樹脂製絶
縁膜５がコーティングされており、この絶縁膜５の上記
コイル導体４の内端部４ｂ部分にはスルーホール６が形
成されている。Further, in FIG. 2 showing a cross section of the coil, the upper surface of the coil conductor 4 except for each terminal electrode 3a, 3b of the substrate 2 is coated with a resin insulating film 5 made of polyimide, polyamide, etc. A through hole 6 is formed in the insulating film 5 at the inner end 4b of the coil conductor 4.
また、上記絶縁膜５の上面には帯状のリード電極８が形
成されており、該電極８の一端は上記スルーホール６を
介して内端部４ｂに接続され、他端は端子電極３ｂに接
続されている。これにより本実施例の高周波コイルｌが
構成されている。なお、電極８を保護、絶縁するために
、絶縁膜５及び電極８の上面に、さらに絶縁膜を形成し
てもよい。Further, a strip-shaped lead electrode 8 is formed on the upper surface of the insulating film 5, one end of which is connected to the inner end 4b via the through hole 6, and the other end is connected to the terminal electrode 3b. has been done. This constitutes the high frequency coil l of this embodiment. Note that an insulating film may be further formed on the upper surfaces of the insulating film 5 and the electrode 8 in order to protect and insulate the electrode 8.
次に、本願第２項の発明の一実施例によろ上記高周波コ
イル１の製造方法を説明する。Next, a method for manufacturing the high frequency coil 1 will be described according to an embodiment of the invention in Section 2 of the present application.
第３図（ａ）ないし第３図（目は本実施例の製造工程を
示す断面図であり、この各図は第２図の中央部分を示す
。3(a) to 3 (eyes are cross-sectional views showing the manufacturing process of this embodiment, and each figure shows the central portion of FIG. 2).
■ まず、鏡面研磨が施された厚さ０．６ ｗｈのガラ
ス基板２の上面全面に、密着性を向上させるためのＴＩ
膜７ａをスパッタリング法により形成し、次に１ｊＦＴ
Ｉｌ！！７ａの表面にＴＩ、Ａｇを同時に２元スパッタ
リングすることによりＴｉ−Ａｇ膜７ｂを形成し、続い
てこのＴｉ−Ａｇ膜７ｂの表面に導電性の良いＡｇ膜７
ｃを同じくスパッタリングにより形成して、３層構造の
第１金属膜７を形成する（第３図Ｔａｇ）。■ First, a TI film was applied to the entire upper surface of the mirror-polished glass substrate 2 with a thickness of 0.6 wh to improve adhesion.
A film 7a is formed by sputtering, and then 1jFT
Il! ! A Ti-Ag film 7b is formed by simultaneous binary sputtering of TI and Ag on the surface of the Ti-Ag film 7a, and then a highly conductive Ag film 7 is formed on the surface of the Ti-Ag film 7b.
Similarly, the first metal film 7 having a three-layer structure is formed by sputtering (Tag in FIG. 3).
■ 次に、上記第１金属１ＩＩＩ７の表面に、電解。(2) Next, the surface of the first metal 1III7 is electrolyzed.
又は無電解メツキにより第２金属膜９を形成する。Alternatively, the second metal film 9 is formed by electroless plating.
これにより、厚さ２〜５０μｍ程度の導体膜１０を形成
する（第３図偽））。As a result, a conductor film 10 having a thickness of approximately 2 to 50 μm is formed (FIG. 3 (false)).
■ 上記導体膜１０の表面に感光性ポリイミド樹脂から
なるレジスト膜１１をコーティングし、これを乾爆させ
る（第３図＋０１）、そして、上記レジスト膜１１のコ
イル導体４及び端子電極３ａ。(2) A resist film 11 made of photosensitive polyimide resin is coated on the surface of the conductor film 10, and this is dry-exploded (FIG. 3+01), and the coil conductor 4 and terminal electrode 3a of the resist film 11 are coated.
３ｂ部分以外の不要部分をマスクで覆い、これを露光す
る０次に、これを現像（エツチング）する。Unnecessary parts other than the part 3b are covered with a mask, which is exposed to light, and then developed (etched).
すると、コイル導体４及び端子電極３ａ、３ｂ部分の上
面のみレジスト膜１１が残ることになる。Then, the resist film 11 remains only on the upper surface of the coil conductor 4 and the terminal electrodes 3a and 3b.
これにより、コイル導体４．＠子電極３ａ、３ｂに対応
した開口１２ａを有するマスク１２が形成されることと
なる（第３図（ｄ））。As a result, the coil conductor 4. A mask 12 having openings 12a corresponding to the child electrodes 3a and 3b is formed (FIG. 3(d)).
■ 次に、上記ガラス基板２の上面にドライエツチング
を施す、このドライエツチングは、ＥＣＲプラズマエツ
チング、希ガスイオンビームエツチング、あるいは希ガ
ス逆スパツタリングエツチングを採用する０例えば反応
性ＥＣＲプラズマエツチングは、減圧したガスに高周波
電界をかけて放電を起こし、この低温のプラズマ中に存
在する化学的に活性な原子、電子、イオンと、上記不要
部分の導電１ｌｌｌＯとの化学反応でエツチングするも
のである。Next, dry etching is performed on the upper surface of the glass substrate 2. This dry etching employs ECR plasma etching, rare gas ion beam etching, or rare gas reverse sputtering etching. For example, reactive ECR plasma etching , a high-frequency electric field is applied to the depressurized gas to cause a discharge, and etching is carried out through a chemical reaction between the chemically active atoms, electrons, and ions present in this low-temperature plasma and the conductive 1lllO in the unnecessary parts. .
これにより、上記マスク１２の開口１２ａ部分の導体膜
１０が削り取られ、線幅１０μｍ２間隔１０μｍのコイ
ル導体４及び端子電極３ａ、３ｂが形成される（第３図
ｔｅｌ） 、 Ｌかる後、上記マスク１２を剥離、除去
する。As a result, the conductor film 10 in the opening 12a portion of the mask 12 is scraped off, and the coil conductor 4 and the terminal electrodes 3a, 3b with a line width of 10 μm and an interval of 10 μm are formed (FIG. 3, tel). 12 is peeled off and removed.
なお、上記ポリイミドが非感光性の場合は、ポジ形レジ
ストを塗布した後、絶縁ＷＡ１１の残さない部分を露光
してエツチングすればよい。If the polyimide is non-photosensitive, after applying a positive resist, the portions where the insulating WA 11 is not left may be exposed and etched.
■ 次に、上記コイル導体４．ｉ予電ｉ３ ａ。■Next, the above coil conductor 4. i Pre-charge i3 a.
３ｂのガラス基板２上面全面に感光性ポリイミド樹脂を
コーティングして絶縁膜５を形成し、乾燥させる（第３
図（ｆ））、そして、マスクをかけてこの絶縁膜５の上
記端子電極３ａ、３ｂ （第２図参照）、及びスルーホ
ール６対応部分を除く以外の部分について、上記■工程
と同様の方法にて露光−現像を行う、すると、上記端子
電極３ａ、３ｂ（第２図参照）部分が露出されるととも
に、内端部４ｂ部分にスルーホール６が形成されること
になる（第３図（梢）。3b, the entire upper surface of the glass substrate 2 is coated with photosensitive polyimide resin to form an insulating film 5, and dried (third step
(f)), and the same method as in step (2) above is applied to the parts of the insulating film 5 other than the terminal electrodes 3a, 3b (see Fig. 2) and the parts corresponding to the through holes 6 with a mask applied. When exposure and development are performed at the terminal electrodes 3a and 3b (see FIG. 2), the terminal electrodes 3a and 3b (see FIG. 2) are exposed, and a through hole 6 is formed at the inner end 4b (see FIG. 3). Kozue).
■ 最後に、上記絶縁膜５の上面にスパッタリングによ
り金属膜を形成し、これの不要部分をエツチングして、
上記内端部４ｂと端子電極３ｂとを接続するリード電極
８を形成する（第３図ｆｈｌ）。■Finally, a metal film is formed on the upper surface of the insulating film 5 by sputtering, and unnecessary parts of this are etched.
A lead electrode 8 is formed to connect the inner end portion 4b and the terminal electrode 3b (FIG. 3 fhl).
これにより、本実施例の１．６ Ｘ３．２ Ｘｏ、８
ｔｍからなる大きさの高周波コイル１が製造される（第
１図及び第２図参照）。As a result, 1.6 X3.2 Xo, 8
A high frequency coil 1 having a size of tm is manufactured (see FIGS. 1 and 2).
なお、上記■工程では、コイル導体４の内端部４ｂと端
子電極３ｂとをリード電極８で接続したが、上記両者４
ｂ、３ｂをＡｕ線によるワイヤボンディングにより接続
し、これをナイロン、エポキシ樹脂系の接着剤で固定し
てもよい。In addition, in the above step (2), the inner end 4b of the coil conductor 4 and the terminal electrode 3b were connected by the lead electrode 8, but the above-mentioned both 4
b and 3b may be connected by wire bonding using an Au wire, and this may be fixed with a nylon or epoxy resin adhesive.
次に本実施例の作用効果について説明する。Next, the effects of this embodiment will be explained.
本実施例の高周波コイル１によれば、基板２の上面に導
体膜ｌＯを形成し、該導体膜ｌＯの表面を覆うように上
記基板２の上面にレジスト膜１１を形成し、該レジスト
膜１１の不要部分をエツチングにより除去してコイル導
体４、端子電極３ａ。According to the high frequency coil 1 of this embodiment, a conductive film 10 is formed on the upper surface of the substrate 2, a resist film 11 is formed on the upper surface of the substrate 2 so as to cover the surface of the conductive film 10, and the resist film 11 Unnecessary parts of the coil conductor 4 and terminal electrode 3a are removed by etching.
３ｂに対応するマスク１２を形成し、しかる後マスク１
２の開口１２ａ部分の導体１！１１０をドライエツチン
グ法により除去したので、加工精度の良い垂直な側面を
有する幅と厚みの比率が０．２以上のコイル導体４が形
成でき、それだけ導体抵抗を小さくでき、Ｑを向上でき
る。これにより、高周波領域、ＧＨｚ帯まで自己共振し
ない小型の平面コイルが得られる。A mask 12 corresponding to 3b is formed, and then mask 1
Since the conductor 1!110 in the opening 12a of No. 2 was removed by dry etching, a coil conductor 4 with vertical sides with good processing accuracy and a width to thickness ratio of 0.2 or more can be formed, and the conductor resistance can be reduced accordingly. It can be made smaller and Q can be improved. As a result, a small planar coil that does not self-resonate in the high frequency range, up to the GHz band, can be obtained.
また、本実施例によれば、レジスト膜１１．絶縁膜５に
ポリイミドあるいはポリアミド樹脂を採用することによ
り、マスク１２やスルーホール６を形成する際の微細加
工を可能にでき、寸法精度に対する信頼性を向上できる
とともに、耐熱性耐薬剤性、耐湿性に優れ、かつヒート
シロツク性耐振動性特性にも優れた部品が得られる。Further, according to this embodiment, the resist film 11. By using polyimide or polyamide resin for the insulating film 5, it is possible to perform microfabrication when forming the mask 12 and the through holes 6, improve reliability in dimensional accuracy, and improve heat resistance, chemical resistance, and moisture resistance. It is possible to obtain parts with excellent heat-sealable and vibration-resistant properties.
なお、上記実施例では、ガラス基板２上に、コイル導体
４及び絶縁膜５を一層形成した場合を例にとって説明し
たが、本発明は上記実施例のコイル１において、上記絶
［１５の上面にさらにコイル導体、絶縁膜を操り返し形
成してなる多層コイルにも適用でき、また上記基板２を
挟んだ両表面にコイルを形成してなるものにも適用でき
る。In the above embodiment, the case where the coil conductor 4 and the insulating film 5 are formed in one layer on the glass substrate 2 has been explained as an example. Furthermore, the present invention can be applied to a multilayer coil formed by repeatedly forming a coil conductor and an insulating film, and also to a multilayer coil formed by forming coils on both surfaces of the substrate 2 sandwiched therebetween.
また、上記実施例では、第１金属膜７の上面に第２金属
膜９を形成して導体膜１０を形成した場合を例にとって
説明したが、この導体膜１０の形成方法はこれに限られ
るものではなく、例えばスパッタリング、あるいは電解
、無電解メツキだけで導体膜１０を形成してもよい。Further, in the above embodiment, the second metal film 9 is formed on the upper surface of the first metal film 7 to form the conductor film 10. However, the method for forming the conductor film 10 is limited to this. For example, the conductor film 10 may be formed only by sputtering, electrolytic plating, or electroless plating.
さらに、上記実施例ではスパイラル状のコイルを例にと
って説明したが、本発明は勿論これに限られるものでは
ない０例えば、第４図に示すようなミアンダタイプのコ
イル導体２０にも通用でき、この場合も上記実施例と同
様の効果が得られる。Furthermore, although the above embodiments have been explained using a spiral coil as an example, the present invention is of course not limited to this.For example, the present invention can also be applied to a meander type coil conductor 20 as shown in FIG. In this case, the same effects as in the above embodiment can be obtained.
さらにまた、上記実施例では高周波コイル１を例にとっ
たが、本発明はコイルとコンデンサとを組み合わせてな
るＬＣフィルタや、トランスなどにも適用できる。Furthermore, although the high frequency coil 1 was taken as an example in the above embodiment, the present invention can also be applied to an LC filter or a transformer formed by combining a coil and a capacitor.
以上のように本発明に係る高周波コイル及びその製造方
法によれば、基板上に形成された導体膜をドライエツチ
ングで処理してコイル導体を形成したので、加工精度を
向上して寸法精度に優れ、かつ幅に対して厚みの大きな
コイルパターンが形成できるとともに、Ｑを向上できる
効果がある。As described above, according to the high frequency coil and the method for manufacturing the same according to the present invention, the coil conductor is formed by dry etching the conductor film formed on the substrate, so processing accuracy is improved and dimensional accuracy is excellent. , a coil pattern with a large thickness relative to the width can be formed, and the Q can be improved.
第１図ないし第３図は本発明の一実施例による高周波コ
イル及びその製造方法を説明するための図であり、第１
図はその平面図、第２図はその断面図、第３図ｆａｌな
いし第３図（＋１１はそれぞれ製造工程を示す断面図、
第４図は上記実施例の変形例を示す斜視図である。
図において、１は高周波コイル、２はガラス基ｖｉ（基
板）、４はコイル導体、１０は導体膜、１１はレジスト
膜、１２はドライエツチング用マスク、１２ａはドライ
エツチング用マスクの開口である。1 to 3 are diagrams for explaining a high frequency coil and a manufacturing method thereof according to an embodiment of the present invention, and FIG.
The figure is a plan view, Figure 2 is a sectional view, Figures 3 to 3 (+11 are sectional views showing the manufacturing process,
FIG. 4 is a perspective view showing a modification of the above embodiment. In the figure, 1 is a high frequency coil, 2 is a glass substrate vi (substrate), 4 is a coil conductor, 10 is a conductor film, 11 is a resist film, 12 is a dry etching mask, and 12a is an opening in the dry etching mask.
Claims (2)
部分をドライエッチングにより除去して上記導体膜の幅
と厚みの比率（厚み／幅）が０．２以上５．０以下のコ
イル導体を形成したことを特徴とする高周波コイル。(1) A conductive film is formed on the surface of the substrate, and unnecessary parts of the conductive film are removed by dry etching so that the ratio of width to thickness (thickness/width) of the conductive film is 0.2 or more and 5.0 or less. A high-frequency coil characterized by forming a coil conductor.
を覆うように上記基板の上面にレジスト膜を形成し、該
レジスト膜の不要部分をエッチング法により除去してコ
イル導体に対応するマスクを形成し、しかる後該マスク
の開口部分の導体膜をドライエッチング法により除去し
て上記導体膜の幅と厚みの比率が０．２以上５．０以下
のコイル導体を形成したことを特徴とする高周波コイル
の製造方法。(2) A conductive film is formed on the surface of the substrate, a resist film is formed on the upper surface of the substrate so as to cover the surface of the conductive film, and unnecessary portions of the resist film are removed by an etching method to correspond to the coil conductor. A coil conductor having a width-to-thickness ratio of the conductor film of 0.2 or more and 5.0 or less is formed by forming a mask, and then removing the conductor film in the opening portion of the mask by dry etching. Features: High-frequency coil manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63278131A JPH07101652B2 (en) | 1988-11-01 | 1988-11-01 | High frequency coil manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63278131A JPH07101652B2 (en) | 1988-11-01 | 1988-11-01 | High frequency coil manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02123706A true JPH02123706A (en) | 1990-05-11 |
| JPH07101652B2 JPH07101652B2 (en) | 1995-11-01 |
Family
ID=17593030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63278131A Expired - Lifetime JPH07101652B2 (en) | 1988-11-01 | 1988-11-01 | High frequency coil manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07101652B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991019303A1 (en) * | 1990-05-25 | 1991-12-12 | Murata Manufacturing Co., Ltd. | High frequency coil and method of manufacturing the same |
| JPH04209507A (en) * | 1990-12-05 | 1992-07-30 | Murata Mfg Co Ltd | High-frequency coil |
| JPH04223307A (en) * | 1990-12-25 | 1992-08-13 | Murata Mfg Co Ltd | Chip type coil with shield |
| US5307045A (en) * | 1989-12-28 | 1994-04-26 | Murata Manufacturing Co., Ltd. | High-frequency inductor and manufacturing method thereof |
| JPH0945570A (en) * | 1995-08-03 | 1997-02-14 | Koa Corp | Electronic component and method of manufacturing the same |
| US6593841B1 (en) | 1990-05-31 | 2003-07-15 | Kabushiki Kaisha Toshiba | Planar magnetic element |
| US7480980B2 (en) | 2005-01-07 | 2009-01-27 | Samsung Electro-Mechanics Co., Ltd. | Planar magnetic inductor and method for manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691406A (en) * | 1979-12-26 | 1981-07-24 | Hitachi Ltd | Thin film coil |
| JPS5739598A (en) * | 1980-08-21 | 1982-03-04 | Asahi Chemical Ind | Thick film fine pattern |
-
1988
- 1988-11-01 JP JP63278131A patent/JPH07101652B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691406A (en) * | 1979-12-26 | 1981-07-24 | Hitachi Ltd | Thin film coil |
| JPS5739598A (en) * | 1980-08-21 | 1982-03-04 | Asahi Chemical Ind | Thick film fine pattern |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5307045A (en) * | 1989-12-28 | 1994-04-26 | Murata Manufacturing Co., Ltd. | High-frequency inductor and manufacturing method thereof |
| WO1991019303A1 (en) * | 1990-05-25 | 1991-12-12 | Murata Manufacturing Co., Ltd. | High frequency coil and method of manufacturing the same |
| US6593841B1 (en) | 1990-05-31 | 2003-07-15 | Kabushiki Kaisha Toshiba | Planar magnetic element |
| JPH04209507A (en) * | 1990-12-05 | 1992-07-30 | Murata Mfg Co Ltd | High-frequency coil |
| JPH04223307A (en) * | 1990-12-25 | 1992-08-13 | Murata Mfg Co Ltd | Chip type coil with shield |
| JPH0945570A (en) * | 1995-08-03 | 1997-02-14 | Koa Corp | Electronic component and method of manufacturing the same |
| US7480980B2 (en) | 2005-01-07 | 2009-01-27 | Samsung Electro-Mechanics Co., Ltd. | Planar magnetic inductor and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07101652B2 (en) | 1995-11-01 |
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