JPH02125672A - Josephson junction element and manufacture thereof - Google Patents
Josephson junction element and manufacture thereofInfo
- Publication number
- JPH02125672A JPH02125672A JP63279694A JP27969488A JPH02125672A JP H02125672 A JPH02125672 A JP H02125672A JP 63279694 A JP63279694 A JP 63279694A JP 27969488 A JP27969488 A JP 27969488A JP H02125672 A JPH02125672 A JP H02125672A
- Authority
- JP
- Japan
- Prior art keywords
- superconductor
- temperature oxide
- josephson junction
- junction element
- crystal structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000002887 superconductor Substances 0.000 claims abstract description 37
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 5
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims 2
- 238000010030 laminating Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 239000010949 copper Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910002826 PrBa Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、高温酸化物超電導薄膜を用いたジョセフソン
接合素子及びその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a Josephson junction device using a high-temperature oxide superconducting thin film and a method for manufacturing the same.
（ロ）従来の技術
ジョセフソン接合素子は、その高速性、低消費電力性の
ため半導体をしのぐ高速素子として期待され、ジョセフ
ソンコンピュータの試作が精力的に進められている（″
ジョセフソン。コンピューター技術”パリティ別冊ＮＱ
１．１９８６、Ｐ４０〜Ｐ１７）。(b) Conventional technology Josephson junction devices are expected to be a high-speed device that surpasses semiconductors due to their high speed and low power consumption, and prototype Josephson computers are being actively developed.
Josephson. Computer Technology” Parity Special Issue NQ
1.1986, P40-P17).
現在試作されている素子構造は、ニオブ（Ｎｂ）あるい
は窒化ニオブ（Ｎ ｂ Ｎ）の間に、ご（薄い絶縁膜を
挟んだトンネル接合型のものが主流を占めている。The main element structures currently being prototyped are tunnel junction types in which a thin insulating film is sandwiched between niobium (Nb) or niobium nitride (NbN).
（・・）発明が解決しようとする課題
１足来のジョセフソン接合素子は、液体ヘリウム温度で
動作することを前提としている。これに対して、最近発
見された高温酸化物超電導体を用いたジョセフソン接合
素子を作成することができれば、液体窒素温度での動作
が可能となり、実用性、経済性が苦しく向上する。(...) Problems to be Solved by the Invention The existing Josephson junction devices are premised on operating at liquid helium temperatures. On the other hand, if it were possible to create a Josephson junction device using a recently discovered high-temperature oxide superconductor, it would be possible to operate at liquid nitrogen temperatures, significantly improving its practicality and economic efficiency.
ところが、高温酸化物超電導体はコヒーレンス長が１０
人ときわめて短いため、絶縁膜の厚みを同程度まで薄く
することが困難で、トンネル型接合の作成には成功して
いなかった。However, high-temperature oxide superconductors have a coherence length of 10
Because they are extremely short, it has been difficult to reduce the thickness of the insulating film to the same level as humans, and it has not been possible to successfully create tunnel-type junctions.
本発明はかかる点に鑑み発明されたものにして、トンネ
ル型接合のジョセフソン素子及びその製造方法の提供を
課題とする。The present invention was devised in view of the above, and an object of the present invention is to provide a tunnel junction Josephson device and a method for manufacturing the same.
（ニ）課題を解決するための手段
本発明によるジョセフソン接合素子は、高温酸化物超を
導体Ｌ ｎ Ｂ ａ ｒ Ｃｕ ｓｏ ＋−ａと、この
超電導体と同一の結晶構造を有する非超電導体ＰｒＢａ
ｒｃ ｕ ＋Ｏ＋−ａと、の積層構造からなるもので
ある。(d) Means for Solving the Problems The Josephson junction device according to the present invention combines a high-temperature oxide superconductor with a conductor L n Bar Cu so +-a and a non-superconductor having the same crystal structure as this superconductor. PrBa
It has a laminated structure of rcu +O+-a.
また、本発明によるその素子の製造方法は、ＭＢＥ装置
の成長室内で、高温酸化物超電導体ＬｎＢ ａ ｒｃ
ｕ 、ｏｔ−ａと、この超電導体と同一の結晶構造を有
する非超電導体Ｐ ｒ Ｂ ａ ｔｃ ｕ ｓｏ ｖ−
ａとを連続的に形成することを特徴とするものである。Further, the method for manufacturing the device according to the present invention includes growing a high-temperature oxide superconductor LnB a rc in a growth chamber of an MBE apparatus.
u, ot-a, and a non-superconductor P r B atc u so v- which has the same crystal structure as this superconductor.
A is characterized in that it is formed continuously.
（＋）作 用
非超電導体ｉ’ ｒ Ｂａ、Ｃｕ５Ｏ＋−ｚは、高温酸
化物超電導体Ｌ ｎ Ｂ ａ ｚｃ ｕ 、０ ？−＃
と結晶構造が同一であり、互いにエピタキシャル成長が
可能である。このため、非超電導体の膜厚は、結晶の配
向性を保持したまま任意になし得、ｔ、ｎ以外は構成元
素が共通であり、相互拡散などで高温酸化物超、［導体
のＭｉ電導性を阻害することがない。The (+) action non-superconductor i' r Ba, Cu5O+-z is the high temperature oxide superconductor L n B a zc u ,0? -#
They have the same crystal structure and can be epitaxially grown together. Therefore, the film thickness of the non-superconductor can be made arbitrarily while maintaining the crystal orientation, and the constituent elements are common except for t and n, and by interdiffusion etc. It does not interfere with sexuality.
また、高温酸化物超電導体と非超電導体とを同じＭ Ｂ
Ｅ装置で連続的に形成することができる。In addition, high-temperature oxide superconductors and non-superconductors have the same M B
It can be formed continuously with E equipment.
（・・）実施例 本発明の一実施例を図面に基づいて説明する。(··)Example An embodiment of the present invention will be described based on the drawings.
この図面において、成長室ｌ内には準備室２がら基板３
が挿入されており、成長室１は到達真空度１ｘｌＯ−’
Ｐａであり、ターボポンプ４、イオンポンプ５及び液体
窒素ンユラウド１１にて超高真空が形成される。前記基
板としてマグネシア（Ｍｇｏ）を用いた。In this drawing, the growth chamber 1 includes a preparation chamber 2 and a substrate 3.
is inserted, and the growth chamber 1 has an ultimate vacuum of 1xlO-'
Pa, and an ultra-high vacuum is formed by the turbo pump 4, ion pump 5, and liquid nitrogen cloud 11. Magnesia (Mgo) was used as the substrate.
成長室ｌは５個の分子線源６を有し、ＬｎＢａ） Ｃｕ
ｓ Ｏｙ−ｚ及びＰｒＢａｍＣｕ５Ｏ＋−ａの構成元
素である金属バリウム（Ｂａ）、銅（Ｃｕ）、プラセオ
ジウム（Ｐｒ）、希土類元素（Ｌｎ）及び固体酸素源（
Ｓｂ、０．）が用意され、各分子線源６から個別に原子
又は分子で基板３に照射されるようになっている。希土
類元素（Ｌｎ）はＹ、 Ｌａ、Ｎｄ、Ｓｍ、Ｅｕ、Ｇ
ｄ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕの少なくとも
一種が用いられる。The growth chamber l has five molecular beam sources 6, LnBa)Cu
Metallic barium (Ba), copper (Cu), praseodymium (Pr), rare earth element (Ln), and solid oxygen source (
Sb, 0. ) are prepared, and each molecular beam source 6 irradiates the substrate 3 with atoms or molecules individually. Rare earth elements (Ln) are Y, La, Nd, Sm, Eu, G
At least one of d, Dy, Ho, Er, Tm, Yb, and Lu is used.
存分子線源６の前には、成長速度制御器７にて制御され
るシャッター８が取付けられている。A shutter 8 controlled by a growth rate controller 7 is installed in front of the molecular beam source 6 .
以上の構成において、６００〜６５０℃に加熱した基板
３上に、超電導薄膜ＬｎＢａ、Ｃｕ３０ｔ、を形成する
際には、Ｐｒの分子線源６の前のシャッター８のみが閉
じられ、他のシャッターは全て開かれる。代表的な成長
速度は１人／秒程度である。この場合の基板３の結晶の
成長は、第２図に示すように、各分子線源６から出発し
た原子又は分子が基板３の方に飛んでいき、基板３に衝
突する。すると、基板上で一部再蒸発するものもあるが
、多くは基板表面近傍にとどまり、熟エネルギーを基板
３に４えながら動き回り、捕獲中心で原ｒ−村又は原子
集団を捕獲し、核を形成し、この績はつぎつぎ到着する
原子と合体して安定核となり、順次成長していく。Ｓ
ｂ ｓ Ｏｓはこの合体時に、酸素のみが取り込まれ、
ｓｂ又はｓｂｏが基板゛３から飛散する。かくして超電
導薄；漢を厚み０．２μｍに形成した。In the above configuration, when forming the superconducting thin film LnBa, Cu30t on the substrate 3 heated to 600 to 650°C, only the shutter 8 in front of the Pr molecular beam source 6 is closed, and the other shutters are closed. Everything will be opened. A typical growth rate is on the order of 1 person/second. In this case, as shown in FIG. 2, the crystals on the substrate 3 grow as atoms or molecules starting from each molecular beam source 6 fly toward the substrate 3 and collide with the substrate 3. Then, some of them re-evaporate on the substrate, but most of them stay near the substrate surface and move around while imparting ripe energy to the substrate 3, capturing the original r-village or atomic group at the capture center and releasing the nucleus. This nucleus coalesces with the atoms that arrive one after another to form a stable nucleus, which grows sequentially. S
During this coalescence, b s Os only takes in oxygen,
sb or sbo scatters from the substrate 3. In this way, a superconducting thin film with a thickness of 0.2 μm was formed.
この超電導薄膜の形成に続いて、Ｌｎのシャッター８を
閉じると同時にＰｒのシャンク−を開き、１重続的に絶
縁膜として機能するＰｒ、Ｂａ＋Ｃｕ、Ｏ＋９を数１０
秒で厚み２３〜３５人に形成した。Following the formation of this superconducting thin film, the Ln shutter 8 is closed and at the same time the Pr shank is opened, and several dozen layers of Pr, Ba+Cu, and O+9, which function as an insulating film, are layered in one layer.
It was formed to a thickness of 23 to 35 layers in seconds.
その後再びＰｒのシャッター８を閉じ、Ｌｎのシャッタ
ーを開けて超電導薄膜を形成した。Thereafter, the Pr shutter 8 was closed again, and the Ln shutter was opened to form a superconducting thin film.
このようにしてトンネル型ジョセフソン接合素ｆを得た
。第３図はこの素子の模式断面図であフ、基板３上に高
温酸化物超電導薄膜ＬｎＢａ。In this way, a tunnel type Josephson junction element f was obtained. FIG. 3 is a schematic cross-sectional view of this device, in which a high-temperature oxide superconducting thin film LnBa is formed on a substrate 3.
Ｃｔｌ １０ ＋−１９、非超電導薄膜ＰｒＢａ＋Ｃｕ
＋（）＋−ａｌｏ及び高温酸化物超電導薄膜ＬｎＢａ。Ctl 10 +-19, non-superconducting thin film PrBa+Cu
+()+-alo and high temperature oxide superconducting thin film LnBa.
Ｃｋｌ ３０ ｔ −ａ ９を順次積層したものである
。Ckl 30t-a 9 were sequentially laminated.
而して、超１を等薄膜９の電気抵抗特性を測定したとこ
ろ、第４図の特性を得た。この図面はＬｎとしてＹ、Ｅ
ｒ、Ｈｏ、Ｄｙ、Ｇｄを用いた場合を示しているが、こ
れ以外にＬａ、Ｎｄ、Ｓｍ、Ｅｌｌ、Ｔｍ、Ｙｂ、Ｌｕ
を用いて超電導薄膜９を形成してもよい。これらの元素
を含む超電導薄膜９はいずれも第６図に示すＸ線（Ｃｕ
−Ｋａ線）回折特性を有し、結晶構造が同じである。When the electrical resistance characteristics of the ultra-uniform thin film 9 were measured, the characteristics shown in FIG. 4 were obtained. This drawing shows Y, E as Ln.
The case where r, Ho, Dy, and Gd are used is shown, but in addition to these, La, Nd, Sm, Ell, Tm, Yb, and Lu are used.
The superconducting thin film 9 may be formed using the following. The superconducting thin film 9 containing these elements is exposed to X-rays (Cu
-Ka line) and have the same crystal structure.
非超電導薄膜１０の電気抵抗特性を第５図に示す。また
、この非超電導！Ｖ膜ｌＯのＸ線（Ｃｕ−Ｋａ線）回折
特性を第７図に示す。第６図及び第７図から、肉薄膜９
と１０は同じ結晶構造をもつことがわかる。The electrical resistance characteristics of the non-superconducting thin film 10 are shown in FIG. Also, this non-superconducting! FIG. 7 shows the X-ray (Cu--Ka ray) diffraction characteristics of the V film IO. From FIG. 6 and FIG. 7, the thin film 9
It can be seen that and 10 have the same crystal structure.
尚、実施例において、分子状態で照射される固（本酸素
源としてｓｂ、ｏ、を用いたが、これに代ってＡｓ、Ｏ
，を用いることもできる。特にＡＳ＋Ｏｉはｓｂ、ｏ、
に比し低い温度で照射するのに好ましい。In the examples, solids irradiated in a molecular state (sb, o, etc. were used as oxygen sources, but As, O, etc. were used instead).
, can also be used. Especially AS+Oi is sb, o,
It is preferable to irradiate at a temperature lower than that of irradiation.
（ト）発明の効果
本発明によれば、絶縁膜となる非超電導体Ｐｒ１（ａ
ｒｃ ｕ 、ｏ ＋−１の膜厚を、高温酸化物超電導体
１、ｎ Ｒａ ＋ Ｃｕ ｓｏ ＋−＃のコヒーレンス
長程度にしたトンネル型ジョセフソン接合素子を提供す
ることができる。また、その高温酸化物超電導体と非超
電導体を連続的に形成することにより、ジョセフソン接
合素子の製造が容易になる。(g) Effects of the invention According to the invention, the non-superconductor Pr1 (a
It is possible to provide a tunnel-type Josephson junction element in which the film thicknesses of rcu and o+-1 are approximately the same as the coherence length of high-temperature oxide superconductor 1, nRa+Cuso+-#. Further, by continuously forming the high temperature oxide superconductor and the non-superconductor, manufacturing of the Josephson junction device is facilitated.
第１図はＭ Ｂ Ｅ装置の模式図、第２図はＭ Ｂ Ｅ
装置における基板上の薄膜の形成状況の説明図、第３図
はジョセフソン接合素子の模式断面図、第１図及び第５
図は高温酸化物超電導体及び非超電る。
３・・基板、９・・・高温酸化物超電導体、１０・・・
非超電導体。Figure 1 is a schematic diagram of the MBE device, Figure 2 is the MBE
An explanatory diagram of the state of formation of a thin film on a substrate in the device, Figure 3 is a schematic cross-sectional view of a Josephson junction element, Figures 1 and 5.
The diagram shows high-temperature oxide superconductors and non-superconductors. 3...Substrate, 9...High temperature oxide superconductor, 10...
Non-superconductor.
Claims (2)
＿−＿■と、 この超電導体と同一の結晶構造を有する非超電導体Ｐｒ
Ｂａ＿２Ｃｕ＿３Ｏ＿７＿−＿■と、の積層構造からな
るジョセフソン接合素子。 但し、ＬｎはＹ、Ｌａ、Ｎｄ、Ｓｍ、Ｅｕ、Ｇｄ、Ｄｙ
、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕの少なくとも一種であ
る。(1) High-temperature oxide superconductor LnBa_2Cu_3O_7
＿－＿■ and a non-superconductor Pr having the same crystal structure as this superconductor
A Josephson junction element consisting of a laminated structure of Ba_2Cu_3O_7_-_■. However, Ln is Y, La, Nd, Sm, Eu, Gd, Dy
, Ho, Er, Tm, Yb, and Lu.
ｎＢａ＿２Ｃｕ＿３Ｏ＿７＿−■と、この超電導体と同
一の結晶構造を有する非超電導体ＰｒＢａ＿２Ｃｕ＿３
Ｏ＿７＿−＿■とを連続的に形成することを特徴とする
ジョセフソン素子の製造方法。 但し、ＬｎはＹ、Ｌａ、Ｎｄ、Ｓｍ、Ｅｕ、Ｇｄ、Ｄｙ
、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕの少なくとも一種であ
る。(2) High-temperature oxide superconductor L is grown in the growth chamber of the MBE device.
nBa_2Cu_3O_7_-■ and a non-superconductor PrBa_2Cu_3 having the same crystal structure as this superconductor.
A method for manufacturing a Josephson element, characterized in that O_7_-_■ is formed continuously. However, Ln is Y, La, Nd, Sm, Eu, Gd, Dy
, Ho, Er, Tm, Yb, and Lu.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63279694A JPH02125672A (en) | 1988-11-04 | 1988-11-04 | Josephson junction element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63279694A JPH02125672A (en) | 1988-11-04 | 1988-11-04 | Josephson junction element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02125672A true JPH02125672A (en) | 1990-05-14 |
Family
ID=17614572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63279694A Pending JPH02125672A (en) | 1988-11-04 | 1988-11-04 | Josephson junction element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02125672A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0570105A (en) * | 1991-09-17 | 1993-03-23 | Sumitomo Electric Ind Ltd | Oxide superconducting thin film |
| JPH0575171A (en) * | 1991-09-17 | 1993-03-26 | Sumitomo Electric Ind Ltd | Superconducting junction |
| JPH0585705A (en) * | 1991-09-26 | 1993-04-06 | Sumitomo Electric Ind Ltd | Oxide superconducting thin film |
| WO1994025969A1 (en) * | 1993-04-30 | 1994-11-10 | Varian Associates, Inc. | High-temperature josephson junction and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6413777A (en) * | 1987-07-07 | 1989-01-18 | Sharp Kk | Josephson element |
| JPH01272171A (en) * | 1988-02-02 | 1989-10-31 | Thomson Csf | Element having thin layer made of superconducting material |
| JPH0221676A (en) * | 1988-07-08 | 1990-01-24 | Semiconductor Energy Lab Co Ltd | Tunnel junction between superconductors |
-
1988
- 1988-11-04 JP JP63279694A patent/JPH02125672A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6413777A (en) * | 1987-07-07 | 1989-01-18 | Sharp Kk | Josephson element |
| JPH01272171A (en) * | 1988-02-02 | 1989-10-31 | Thomson Csf | Element having thin layer made of superconducting material |
| JPH0221676A (en) * | 1988-07-08 | 1990-01-24 | Semiconductor Energy Lab Co Ltd | Tunnel junction between superconductors |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0570105A (en) * | 1991-09-17 | 1993-03-23 | Sumitomo Electric Ind Ltd | Oxide superconducting thin film |
| JPH0575171A (en) * | 1991-09-17 | 1993-03-26 | Sumitomo Electric Ind Ltd | Superconducting junction |
| JPH0585705A (en) * | 1991-09-26 | 1993-04-06 | Sumitomo Electric Ind Ltd | Oxide superconducting thin film |
| WO1994025969A1 (en) * | 1993-04-30 | 1994-11-10 | Varian Associates, Inc. | High-temperature josephson junction and method |
| US5399881A (en) * | 1993-04-30 | 1995-03-21 | Varian Associates, Inc. | High-temperature Josephson junction and method |
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