JPH02128151U

JPH02128151U -

Info

Publication number: JPH02128151U
Application number: JP3780089U
Authority: JP
Priority date: 1989-03-31
Filing date: 1989-03-31
Publication date: 1990-10-23

Description

[Brief explanation of the drawing]

第１図乃至第１６図は、この考案の第１乃至第
１６の実施例によるホトマスクをそれぞれ示す上
面図、第１７図は、第１図乃至第１６図のマスク
パターンの転写例を示すウエハ上面図、第１８図
は、被露光パターン領域の平面図形の一例を示す
図、第１９図乃至第２１図は、被露光パターン領
域内におけるチツプ内パターン領域の異なる配置
例をそれぞれ示す平面図、第２２図は、第１８図
の図形の組合せ配置を示す平面図、第２３図、第
２５図、第２７図、第２９図、第３１図及び第３
３図は、被露光パターン領域の平面図形の他の例
をそれぞれ示す図、第２４図、第２６図、第２８
図、第３０図、第３２図及び第３４図は、それぞ
れ第２３図、第２５図、第２７図、第２９図、第
３１図及び第３３図の図形の組合せ配置を示す平
面図、第３５図は、従来のホトマスクの一例を示
す上面図、第３６図は、第３５図のＳ−Ｓ′線に
沿う断面図、第３７図は、投影露光系の一例を示
す図、第３８図は、第３５図のマスクパターンの
転写例を示すウエハ上面図である。１０……ホトマスク、１０Ａ……マスク基板、
１２……被露光パターン領域、ＡＭ_１〜ＡＭ_４…
…アライメントマーク、ＣＰ_１，ＣＰ_２……アラ
イメントずれチエツクマーク、Ａ〜Ｌ，Ｂ_１〜Ｂ
_３……チツプ内パターン領域。 1 to 16 are top views showing photomasks according to the first to 16th embodiments of this invention, and FIG. 17 is a top view of a wafer showing examples of transfer of the mask patterns shown in FIGS. 1 to 16. 18A and 18B are diagrams showing an example of the planar figure of the pattern area to be exposed, and FIGS. 22 is a plan view showing the combined arrangement of the figures in FIG. 18, FIGS. 23, 25, 27, 29, 31, and 3.
3 is a diagram showing other examples of the planar figure of the exposed pattern area, FIG. 24, FIG. 26, and FIG. 28.
30, 32, and 34 are plan views showing the combined arrangement of the figures in FIGS. 23, 25, 27, 29, 31, and 33, respectively. FIG. 35 is a top view showing an example of a conventional photomask, FIG. 36 is a sectional view taken along line S-S' in FIG. 35, FIG. 37 is a diagram showing an example of a projection exposure system, and FIG. 38 is a diagram showing an example of a projection exposure system. 35 is a top view of a wafer showing an example of transfer of the mask pattern of FIG. 35. FIG. 10...Photomask, 10A...Mask substrate,
12...Exposed pattern area, _AM1 to _AM4 ...
... Alignment mark, CP ₁ , CP ₂ ... Alignment deviation check mark, A to L, B ₁ to B
₃ ...Pattern area within the chip.

Claims

[Claims for Utility Model Registration] 1. A rectangular mask substrate, a pattern area to be transferred formed on the mask substrate, and a plurality of alignment portions formed on the mask substrate outside the pattern area to be transferred. What is claimed is: 1. A mask for a pattern transfer device, comprising: a plurality of alignment marks arranged near a plurality of corners of the mask substrate. 2. The pattern area to be transferred is formed by arranging a large number of pattern areas within the chip, each of which has a rectangular shape and approximately the same size, in an orthogonal matrix, and the plane of the pattern area to be transferred corresponds to the contour of this orthogonal matrix arrangement. The figure is divided into 2 parts in each direction in the row and column directions.
2. The pattern transfer according to claim 1, which is equally divisible, and the partial figures on both sides of each bisector form a dodecagon or more polygon that is symmetrical with respect to the bisector. Equipment mask. 3. The mask for a pattern transfer apparatus according to claim 2, wherein the pattern area to be transferred is arranged such that the row direction and the column direction are respectively parallel to two diagonal lines of the mask substrate. 4. On one surface of the mask substrate on which the transferred pattern area is formed, a polygonal loop-shaped or annular frame with 8 or more sides is provided so as to surround the transferred pattern area inwardly from the alignment mark. 4. The mask for a pattern transfer apparatus according to claim 2, further comprising a thin film provided on the frame so as to cover the pattern area to be transferred.