JPH02129747U

JPH02129747U -

Info

Publication number: JPH02129747U
Application number: JP1989038098U
Authority: JP
Priority date: 1989-03-31
Filing date: 1989-03-31
Publication date: 1990-10-25

Description

[Brief explanation of drawings]

第１図は本考案の原理説明図、第２図は本考案
の実施例を示す概略断面図、第３図はヘツダへの
取付け要領の説明図、第４図は問題点の説明図、
第５図はシリコンサーモパイルの部分斜視図、第
６図はシリコンサーモパイルの概略断面図、第７
図はシリコンサーモパイルの概略平面図。第１図で１４，１６は第１、第２導電型層、１
９は電磁波吸収体層、４１〜４４は開口である。 Fig. 1 is an explanatory diagram of the principle of the present invention, Fig. 2 is a schematic sectional view showing an embodiment of the invention, Fig. 3 is an explanatory diagram of how to attach it to a header, Fig. 4 is an explanatory diagram of problems,
Fig. 5 is a partial perspective view of a silicon thermopile, Fig. 6 is a schematic sectional view of a silicon thermopile, and Fig. 7 is a partial perspective view of a silicon thermopile.
The figure is a schematic plan view of a silicon thermopile. In FIG. 1, 14 and 16 are the first and second conductivity type layers, 1
9 is an electromagnetic wave absorber layer, and 41 to 44 are openings.

Claims

[Claims for Utility Model Registration] An epitaxial layer 12 of a first conductivity type grown on a silicon substrate and a first conductor layer 14 of an opposite conductivity type.
In some cases, a large number of second conductor layers 16 of the first conductivity type are formed in parallel to form a cross shape as a whole, and one end and the other end of each are connected with a metal layer to form a zigzag series. As a connection body, an electromagnetic wave absorber layer 1 is placed on a rectangular area formed in the center of the cross via an insulating layer.
9, one end of the first and second conductivity type layers on the absorber layer side is used as a hot junction, and the other end is used as a cold junction, and the silicon substrate at the bottom of the absorber is thinned to form a cavity in this part. Part 11A
In a silicon thermopile in which the silicon substrate is attached to the header 31 of the package at its bottom surface, an opening 41 communicating with the cavity is formed in a rectangular area between the sides of the cross, with the two sides being the two sides. A silicon thermopile characterized by the provision of.