JPH02129913U - - Google Patents
Info
- Publication number
- JPH02129913U JPH02129913U JP3912089U JP3912089U JPH02129913U JP H02129913 U JPH02129913 U JP H02129913U JP 3912089 U JP3912089 U JP 3912089U JP 3912089 U JP3912089 U JP 3912089U JP H02129913 U JPH02129913 U JP H02129913U
- Authority
- JP
- Japan
- Prior art keywords
- door
- vehicle body
- back door
- base plate
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Body Structure For Vehicles (AREA)
Description
第１図乃至第４図はこの考案の一実施例を示す
もので、第１図は要部の斜視図、第２図はバツク
ドアのドアヒンジの取付け状態を示す要部の正面
図、第３図はチエツカーの取付け状態を示す要部
の縦断面図、第４図はリヤコンビネーシヨンラン
プの取付け状態を示す要部の横断面図、第５図は
車体背面の外観を示す斜視図、第６図乃至第９図
は従来例を示すもので、第６図はドアヒンジの概
略構成を示す斜視図、第７図は第５図の−線
断面図、第８図は第５図の−線断面図、第９
図はドアヒンジのヒンジブラケツトの取付け状態
を示す要部の斜視図である。 １…車体、２…背面開口部、３…バツクドア、
４…ドア本体、６…上部ドアヒンジ、９…ベース
プレート、１０…回動アーム、１１…チエツカー
、２１…下方延出部、２２…取付けブラケツト。
もので、第１図は要部の斜視図、第２図はバツク
ドアのドアヒンジの取付け状態を示す要部の正面
図、第３図はチエツカーの取付け状態を示す要部
の縦断面図、第４図はリヤコンビネーシヨンラン
プの取付け状態を示す要部の横断面図、第５図は
車体背面の外観を示す斜視図、第６図乃至第９図
は従来例を示すもので、第６図はドアヒンジの概
略構成を示す斜視図、第７図は第５図の−線
断面図、第８図は第５図の−線断面図、第９
図はドアヒンジのヒンジブラケツトの取付け状態
を示す要部の斜視図である。 １…車体、２…背面開口部、３…バツクドア、
４…ドア本体、６…上部ドアヒンジ、９…ベース
プレート、１０…回動アーム、１１…チエツカー
、２１…下方延出部、２２…取付けブラケツト。
Claims (1)
- 回動軸を支持するベースプレートと前記回動軸
に取付けられた回動アームとを備えた上、下一対
のドアヒンジが車体の背面開口部を開閉操作する
バツクドアのドア本体の一側部側に配設され、前
記ドアヒンジのベースプレートが車体側に、また
前記回動アームが前記バツクドアのドア本体にそ
れぞれ固定された車体のバツクドア取付け構造に
おいて、前記ドア本体の上部側に配置される前記
ドアヒンジのベースプレートに下方向に延出させ
た下方延出部を設け、この下方延出部に前記バツ
クドアのドア本体の回動量を規制するチエツカー
の取付けブラケツトを固定したことを特徴とする
車体のバツクドア取付け構造。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3912089U JPH02129913U (ja) | 1989-03-31 | 1989-03-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3912089U JPH02129913U (ja) | 1989-03-31 | 1989-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02129913U true JPH02129913U (ja) | 1990-10-26 |
Family
ID=31547743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3912089U Pending JPH02129913U (ja) | 1989-03-31 | 1989-03-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02129913U (ja) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855368B1 (en) | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7022948B2 (en) | 2000-12-29 | 2006-04-04 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US7595263B2 (en) | 2003-06-18 | 2009-09-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |
-
1989
- 1989-03-31 JP JP3912089U patent/JPH02129913U/ja active Pending
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7033922B2 (en) | 2000-06-28 | 2006-04-25 | Applied Materials. Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7465666B2 (en) | 2000-06-28 | 2008-12-16 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7235486B2 (en) | 2000-06-28 | 2007-06-26 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US7115494B2 (en) | 2000-06-28 | 2006-10-03 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US6855368B1 (en) | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7022948B2 (en) | 2000-12-29 | 2006-04-04 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7094680B2 (en) | 2001-02-02 | 2006-08-22 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US7352048B2 (en) | 2001-09-26 | 2008-04-01 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7494908B2 (en) | 2001-09-26 | 2009-02-24 | Applied Materials, Inc. | Apparatus for integration of barrier layer and seed layer |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7473638B2 (en) | 2002-01-26 | 2009-01-06 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US7094685B2 (en) | 2002-01-26 | 2006-08-22 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7429516B2 (en) | 2002-02-26 | 2008-09-30 | Applied Materials, Inc. | Tungsten nitride atomic layer deposition processes |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US7595263B2 (en) | 2003-06-18 | 2009-09-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |