JPH02129985A - How to cleave a semiconductor laser wafer - Google Patents

Abstract

(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for cleaving a semiconductor laser wafer to produce a bar-shaped element having a predetermined size and shape by cleaving the semiconductor laser wafer.

[Conventional technology]

A conventional method for manufacturing a semiconductor laser device will be explained with reference to FIG.

First, a wafer 71 is placed on a tape 72, and lines with a pitch of a predetermined resonator size are formed on one end of the wafer 71 using a diamond scriber or the like. After affixing and fixing the wafer 71 to a slide glass 23 or the like with the surface on which the ruled traces are formed facing the slide glass 73 side, the slide glass 73 is passed between a small diameter roller 74 and a large diameter roller 75. The wafer 71 is cleaved by applying pressure uniformly with a small diameter roller 74 to form an optical resonator surface. In this way, a bar-shaped element was obtained.

[Problem that the invention seeks to solve]

However, in the above-mentioned conventional example, since pressure is uniformly applied to the contact line of the small-diameter roller 74 to the wafer, cleavage often starts from multiple parts of the wafer and the wafer is broken into pieces, resulting in the production of elements with accurate resonator dimensions. Production yields were very low.

The present invention was made in view of these problems,
The objective is to provide a cleavage method that allows devices with accurate resonator dimensions to be obtained with a high manufacturing yield.

[Means for solving problems]

The above objects can be achieved by the following invention.

The method of cleaving a wafer of a semiconductor laser according to the present invention is characterized in that the wafer is brought into local contact with a cleaving member for cleaving the wafer to cleave the wafer.

In other words, in the method of the present invention, cleavage is performed by intensively applying a load to one point of the ruled trace on the wafer, so it is only necessary to align one point for each ruled trace, and alignment is easy. This makes it easier and allows for more accurate pitch machining, and since cleavage starts from a single point on the ruled line,
The frequency of wafer shattering, which was noticeable in the prior art described above, is reduced, and the manufacturing yield of devices is significantly improved.

Note that the "cleaving member" as used in the present invention is not limited to the rollers shown in the conventional examples, but includes scalpels and bladed rollers as described below, and includes a knife or a bladed roller that comes into contact with one point on each ruled path of the wafer. Various materials can be used as long as they are durable and hard.

〔Example〕

Hereinafter, the present invention will be explained by giving specific examples and referring to the drawings.

1 to 5 are diagrams for explaining the method of cleaving a wafer of a semiconductor laser according to the present invention, and FIG. 1 shows a case in which a wafer is set on an inclined table 3 and pressurized by a roller 5. 2 is a diagram showing the state in which the tilting table 3 of FIG. 1 is tilted, FIG. 3 is a diagram showing the case where the roller 5 is set on the tilting table 3, and FIG. A diagram showing a case where a knife 12 is set in place of the roller 5, FIG. 5 is a diagram showing a case where a bladed roller 15 is set, and FIG. 6 is a diagram showing a case where a bladed roller 1 is set.
5 is a front view of the vehicle.

The devices used in the following examples include a rotating table 2 for mounting and rotating a wafer, a micrometer 21 for adjusting the rotation angle of the rotating table 2, and a tilting table 3 for tilting the wafer or cleaving member. , a micrometer 31 for adjusting the inclination angle of the tilt table 3, a moving stage 4 for moving the contact point between the wafer and the cleaving member, and a micrometer for adjusting the moving position of the moving stage 4. 41.

As the above-mentioned inclined table 3, for example, C
-141- (2) It may be a stage (product name) that moves like a gonio stage, or it may be a stage like a three-point support that moves one point and rotates the virtual center.

The cleavage method of the present invention using such an apparatus can be carried out, for example, as follows.

The wafer used in this embodiment was a GaAs wafer polished to a thickness of about 100 μm.

First, as shown in FIG. 1, a wafer 1 to be cleaved is fixed on a rotating table 2. Then, the micrometer 21 is turned to align the cleavage axis direction with the line marks made on the wafer 1 and the roller 5 supported by the roller support 6, and the rotary table 2 is rotated in the horizontal direction. so that it is parallel to Next, the micrometer 31 is turned to tilt the tilt table 3. By adjusting the micrometer 31 at this time, the load applied to the ruled traces on the wafer 1 can be changed as desired. For example, when the diameters of the GaAs wafer 1 and roller 5 are 10 mmφ, the inclined table 3 may be appropriately adjusted to apply a pressure of about 20 g/mm 2 so that cleavage can be performed effectively. FIG. 2 shows a state in which the tilt table 3 is tilted. In this state, the ruled line contacts the roller 5,
A load of approximately 20 g/mm2 is applied to the local area to cleave it. Furthermore, by turning the micrometer 41 and moving the moving stage 4, a load is applied to the ruled traces on the wafer 1 one after another, and the wafer is cleaved.

Alternatively, as shown in FIG. 3, the wafer 1 is fixed on a flat wafer support IO, and the roller 5 is attached to the tilting stage 3, and by tilting the wafer 1, a load is applied to the ruled traces of the wafer 1 and localized. Cleavage may also be performed by applying pressure.

Furthermore, as shown in FIG.
The blade tip of the scalpel 12 may be brought into contact with the scribed mark and then pressurized to cleave it. In this case, the next time cleavage is performed, the inclined table 3 is returned to the horizontal position, moved to the next ruled trace, and the same operation as above is performed. In addition, the scalpel 12 is a surgical scalpel AII manufactured by Ft]TAB^.
LIO was used.

Furthermore, as shown in FIG. 5, a bladed roller 15 with disk blades formed on the roller at resonator length intervals is used instead of the roller 5 and the knife 12, and by tilting the tilt table 3, the wafer 1 can be removed. It is also possible to cleave all at once. FIG. 6 shows a front view of the bladed roller 15. Here, d indicates the resonator length interval.

In the above embodiments, the wafer is made of GaAs, but other compound semiconductors or mixed crystal semiconductors can also have similar effects.

[Effects of the Invention] As explained above, according to the present invention, when applying pressure to the ruled lines on the wafer to cleave it, by applying a load to a local part of the wafer, the wafer can be precisely aligned at the pitch of the resonator dimensions. I was able to process it into a bar state. Furthermore, since cleavage starts locally, the frequency of shattering is reduced, and the manufacturing yield of the device is improved.

[Brief explanation of drawings]

1 to 5 are diagrams for explaining the method of cleaving a wafer of a semiconductor laser according to the present invention, and FIG. 1 shows a case in which a wafer is set on an inclined table 3 and pressurized by a roller 5. 2 is a diagram showing the state in which the tilting table 3 of FIG. 1 is tilted, FIG. 3 is a diagram showing the case where the roller 5 is set on the tilting table 3, and FIG. FIG. 5 is a diagram showing a case where a knife 12 is set in place of the roller 5, and FIG. 5 is a diagram showing a case where a bladed roller 15 is set. FIG. 6 is a front view of the bladed roller 15, and FIG. 7 is a diagram showing a conventional example. 1. Working... wafer, 2... rotating table, 3... tilting table, 4... moving stage, 5... roller, 6... roller support, 10... wafer support stand, 12... ... Scalpel, 13... Knife support column, 15... Roller with blade, 21.31.41... Micrometer < Figure 1 Patent applicant Canon Co., Ltd.

Claims (1)

[Scope of Claims] 1) A semiconductor laser wafer cleavage method for manufacturing a bar-shaped element having a predetermined size and shape by cleaving a semiconductor laser wafer, comprising: the wafer; and for cleaving the wafer. A method for cleaving a semiconductor laser wafer, characterized in that the wafer is cleaved by bringing the wafer into local contact with a cleavage member. 2) The wafer is cleaved by tilting the cleavage member relative to the wafer and bringing the cleavage member into contact with the wafer and an edge of the wafer. method for cleaving semiconductor laser wafers. 3) The method of cleaving a semiconductor laser wafer according to claim 1 or 2, wherein the cleaving member is roller-shaped. 4) Claim 1, wherein the cleavage member is female-shaped.
A method for cleaving a semiconductor laser wafer according to item 1 or 2. 5) The method of cleaving a semiconductor laser wafer according to claim 1 or 2, wherein the cleaving member is in the shape of a roller with blades.