JPH0213846B2 - - Google Patents

Info

Publication number
JPH0213846B2
JPH0213846B2 JP57060022A JP6002282A JPH0213846B2 JP H0213846 B2 JPH0213846 B2 JP H0213846B2 JP 57060022 A JP57060022 A JP 57060022A JP 6002282 A JP6002282 A JP 6002282A JP H0213846 B2 JPH0213846 B2 JP H0213846B2
Authority
JP
Japan
Prior art keywords
transistor
harmonics
fundamental wave
oscillation
open stub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57060022A
Other languages
Japanese (ja)
Other versions
JPS58177010A (en
Inventor
Toshuki Saito
Mikio Iwakuni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57060022A priority Critical patent/JPS58177010A/en
Publication of JPS58177010A publication Critical patent/JPS58177010A/en
Publication of JPH0213846B2 publication Critical patent/JPH0213846B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014—Structural aspects of oscillators
    • H03B2200/0024—Structural aspects of oscillators including parallel striplines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/007—Generation of oscillations based on harmonic frequencies, e.g. overtone oscillators

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Description

【発明の詳細な説明】 発明の技術分野 本発明は、トランジスタを用いて超高周波を発
生させる発振逓倍器に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to an oscillation multiplier that uses transistors to generate ultra-high frequencies.

従来技術と問題点 超高周波を発生させる為に、ガンダイオード発
振器が知られているが、効率が低い欠点があつ
た。又トランジスタを用いた発振器の高調波成分
をフイルタにより取出す構成も知られているが、
発振出力に含まれる高調波成分は比較的小さいも
のであるから、充分な大きさの高調波を取出すこ
とが容易でない欠点があつた。
Prior Art and Problems Gunn diode oscillators are known for generating ultra-high frequencies, but they have the disadvantage of low efficiency. Also known is a configuration in which the harmonic components of an oscillator using a transistor are extracted using a filter.
Since the harmonic components included in the oscillation output are relatively small, there is a drawback that it is not easy to extract harmonics of sufficient magnitude.

発明の目的 本発明は、トランジスタにより基本波を発振さ
せ、その基本波を逓倍した高調波の超高周波を、
簡単な構成で具つ効率良く発生し得るようにする
ことを目的とするものである。以下実施例につい
て詳細に説明する。
Purpose of the Invention The present invention oscillates a fundamental wave using a transistor, and generates ultra-high frequency harmonics obtained by multiplying the fundamental wave.
The purpose is to enable efficient generation with a simple configuration. Examples will be described in detail below.

発明の実施例 第1図は本発明の一実施例の説明図であり、
GaAsFET(電界効果トランジスタ)を用いた場
合についてのものである。このGaAs FETを以
下単にトランジスタQと称す。トランジスタQの
ゲートGにはオープンスタブ1が接続され、ソー
スSにはオープンスタブ2が接続され、ドレイン
Dは接地されている。基本波の波長をλ1、出力す
べき高調波の波長をλnとすると、オープンスタ
ブ1は約λ1/4の長さで、オープンスタブ2は約
λ1/2の長さとする。又L1,L2はインダクタ
ンス、C1,C2はコンデンサ、R1,R2は抵
抗であり、電源電圧−Vを抵抗R1、インダクタ
ンスL1を介してトランジスタQのソースSに加
えると共に、抵抗R1による電圧降下分を、抵抗
R2、インダクタンスL2を介してゲートGにバ
イアス電圧として加える。又3はλn/4の結合
線路であり、出力端子OUTに接続される。
Embodiment of the invention FIG. 1 is an explanatory diagram of an embodiment of the present invention.
This is for the case where GaAsFET (field effect transistor) is used. This GaAs FET will be simply referred to as transistor Q hereinafter. The open stub 1 is connected to the gate G of the transistor Q, the open stub 2 is connected to the source S, and the drain D is grounded. When the wavelength of the fundamental wave is λ 1 and the wavelength of the harmonic to be output is λn, the open stub 1 has a length of about λ 1 /4, and the open stub 2 has a length of about λ 1 /2. Also, L1 and L2 are inductances, C1 and C2 are capacitors, and R1 and R2 are resistors, and the power supply voltage -V is applied to the source S of the transistor Q via the resistor R1 and inductance L1, and the voltage drop due to the resistor R1 is , resistor R2, and inductance L2 as a bias voltage. Further, 3 is a coupling line of λn/4, which is connected to the output terminal OUT.

オープンスタブ1,2がトランジスタQのゲー
トGとソースSとに接続され、ドレイン接地の基
本波の発振回路が構成される。結合線路3はオー
ブンスタブ2のソースSへの接続側に結合され、
λn/4の結合線路長であるから、波長λnの高調
波のみが出力端子OUTに出力される。即ち、波
長λ1の基本波は、オープンスタブ2を伝搬した
後、そのオープンスタブ2の開放端に於いて全反
射されてトランジスタQに帰還され、そのトラン
ジスタQの非線形特性により逓倍されて、基本波
の整数倍の高調波が発生することになり、その逓
倍された高調波の中の波長λnのみがλn/4の結
合長の結合線路3により取出されることになる。
このとき、波長λn以外の高調波は、基本波と同
様にオープンスタブ2により全反射されてトラン
ジスタQに帰還されるから、逓倍効率を向上する
ことができる。従つて、例えば、40GHz程度の超
高周波を効率良く発生させることができる。
Open stubs 1 and 2 are connected to the gate G and source S of the transistor Q, forming a fundamental wave oscillation circuit with a common drain. The coupled line 3 is coupled to the connection side of the oven stub 2 to the source S,
Since the coupling line length is λn/4, only harmonics of wavelength λn are output to the output terminal OUT. That is, the fundamental wave of wavelength λ 1 propagates through the open stub 2, is totally reflected at the open end of the open stub 2, is fed back to the transistor Q, is multiplied by the nonlinear characteristics of the transistor Q, and becomes the fundamental wave. Harmonics that are integral multiples of the wave are generated, and only the wavelength λn of the multiplied harmonics is extracted by the coupling line 3 having a coupling length of λn/4.
At this time, harmonics other than the wavelength λn are totally reflected by the open stub 2 and fed back to the transistor Q in the same manner as the fundamental wave, so that the multiplication efficiency can be improved. Therefore, for example, ultra-high frequencies of about 40 GHz can be efficiently generated.

又オープスタブ2の根元で結合させている為、
取出す波長λnの高調波信号は、発振条件を満た
す基本波回路(オープンスタブ2は高調波に対す
る損失が大きい)を通過することがないので、そ
れによる回路損が含まれないものとなり、基本波
の発振と高調波の出力調整とは、独立にできるこ
とになる。
Also, since it is joined at the base of the open stub 2,
Since the harmonic signal of wavelength λn to be extracted does not pass through the fundamental wave circuit that satisfies the oscillation conditions (open stub 2 has a large loss for harmonics), the resulting circuit loss is not included, and the fundamental wave is Oscillation and harmonic output adjustment can be done independently.

第2図は本発明の他の実施例を示し、直流給電
系は図示を省略している。この実施例は、λn/
2波長の分布結合形バンドパスフイルタ4を用い
た場合についてのものであり、それぞれλn/2
の長さの結合線路をλn/4の長さで相互に結合
したものである。なお第1図と同一符号は同一部
分を示す。
FIG. 2 shows another embodiment of the present invention, and the DC power supply system is not shown. In this example, λn/
This is for the case where a two-wavelength distributed coupling type bandpass filter 4 is used, and each wavelength is λn/2.
The length of the coupled line is λn/4, and the length of the coupled line is λn/4. Note that the same symbols as in FIG. 1 indicate the same parts.

第3図は本発明の更に他の実施例を示し、直流
給電系は図示を省略している。この実施例は誘電
体共振器5を設けた場合についてのものであり、
第1図及び第2図に示すようなオープンスタブ1
をストリツプ線路で構成したときのQ0が約100〜
200程度であるのに対し、誘電体共振器5はQ0が
約400〜5000程度であるから、周波数の安定化を
図ることができる。又ソースSに接続したオープ
ンスタブ2の根元にλn/4の結合線路3を設け
た場合を示しているが、第2図に示す実施例のよ
うに、分布結合形バンドパスフイルタとすること
もできる。なお第1図と同一符号は同一部分を示
すものである。
FIG. 3 shows still another embodiment of the present invention, and the DC power supply system is not shown. This example is about the case where a dielectric resonator 5 is provided,
Open stub 1 as shown in Figures 1 and 2
When configured with strip lines, Q 0 is approximately 100 ~
200, whereas the dielectric resonator 5 has a Q 0 of about 400 to 5000, making it possible to stabilize the frequency. Furthermore, although the case is shown in which a coupled line 3 of λn/4 is provided at the root of the open stub 2 connected to the source S, it is also possible to use a distributed coupled bandpass filter as in the embodiment shown in FIG. can. Note that the same reference numerals as in FIG. 1 indicate the same parts.

前述の各実施例はドレイン接地で出力ポートを
ソースS側とした場合について示すものである
が、他の接形式及び出力ポートをゲートG側とす
ることも勿論可能である。
Although each of the above-mentioned embodiments shows the case where the drain is grounded and the output port is on the source S side, it is of course possible to use other connection types and the output port is on the gate G side.

発明の効果 以上説明したように、本発明は、GaAs FET
等のトランジスタを用いた発振逓倍器に於いて、
トランジスタの入出力端子にそれぞれオープンス
タブを接続して基本波発振回路を構成すると共
に、それぞれのオープンスタブの何れか一方の根
元即ちトランジスタ側に高調波を取出す為の分布
結合形バンドパスフイルタ等の結合部を設けて、
トランジスタにより逓倍された高調波を取出す構
成としたものであり、オープンスタブや結合部を
マイクロストリツプ線路により形成することによ
りマイクロ波集積回路(MIC)化することがで
きる。又トランジスタの発振可能周波数に対して
数倍の高調波を逓倍によつて取出すことができる
と共に、オープンスタブの根元で結合して高調波
を取出すものであるから、効率良く数10GHzの超
高周波を発生することができる利点があり、更に
基本波の発振と高調波の取出しとの調整を独立的
に行なうことができる利点がある。又結合部によ
り直流が遮断されるので、直流カツトの手段を特
に設ける必要がないものとなる。
Effects of the Invention As explained above, the present invention provides a GaAs FET
In an oscillation multiplier using transistors such as
A fundamental wave oscillation circuit is constructed by connecting open stubs to the input and output terminals of each transistor, and a distributed coupling bandpass filter or the like is installed to extract harmonics from one of the roots of each open stub, that is, on the transistor side. Provide a joint,
It is configured to extract harmonics multiplied by a transistor, and can be made into a microwave integrated circuit (MIC) by forming open stubs and coupling parts with microstrip lines. In addition, harmonics several times higher than the oscillation frequency of the transistor can be extracted by multiplication, and the harmonics can be extracted by combining at the root of the open stub, so it is possible to efficiently generate ultra-high frequencies of several tens of GHz. There is an advantage in that the oscillation of the fundamental wave and the extraction of the harmonics can be independently adjusted. Further, since the direct current is cut off by the coupling portion, there is no need to provide special means for cutting off the direct current.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図及び第3図は本発明のそれぞれ
異なる実施例の説明図である。 1,2はオープンスタブ、3は結合線路、4は
分布結合形バンドパスフイルタ、5は誘電体共振
器、Qはトランジスタ、OUTは出力端子である。
FIGS. 1, 2, and 3 are explanatory diagrams of different embodiments of the present invention. 1 and 2 are open stubs, 3 is a coupled line, 4 is a distributed coupling bandpass filter, 5 is a dielectric resonator, Q is a transistor, and OUT is an output terminal.

Claims (1)

【特許請求の範囲】[Claims] 1 トランジスタを用いた発振逓倍器に於いて、
前記トランジスタの入出力端子にそれぞれオープ
ンスタブを接続して基本波発振回路を構成すると
共に、前記入出力端子にそれぞれ接続したオープ
ンスタブの前記トランジスタ側に高調波を取出す
結合部を設け、前記トランジスタの非線形特性に
より逓倍された高調波を取出す構成としたことを
特徴とする発振逓倍器。
1 In an oscillation multiplier using transistors,
Open stubs are connected to the input and output terminals of the transistors to form a fundamental wave oscillation circuit, and a coupling portion for extracting harmonics is provided on the transistor side of the open stubs connected to the input and output terminals of the transistors. An oscillation multiplier characterized by having a configuration that extracts harmonics multiplied by nonlinear characteristics.
JP57060022A 1982-04-10 1982-04-10 Oscillation multiplier Granted JPS58177010A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57060022A JPS58177010A (en) 1982-04-10 1982-04-10 Oscillation multiplier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57060022A JPS58177010A (en) 1982-04-10 1982-04-10 Oscillation multiplier

Publications (2)

Publication Number Publication Date
JPS58177010A JPS58177010A (en) 1983-10-17
JPH0213846B2 true JPH0213846B2 (en) 1990-04-05

Family

ID=13130019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57060022A Granted JPS58177010A (en) 1982-04-10 1982-04-10 Oscillation multiplier

Country Status (1)

Country Link
JP (1) JPS58177010A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722244B2 (en) * 1986-12-19 1995-03-08 富士通株式会社 Microwave oscillator
JP2731571B2 (en) * 1989-02-10 1998-03-25 日本電気 株式会社 Stripline type oscillator
JP5288939B2 (en) * 2008-08-13 2013-09-11 三菱電機株式会社 High frequency oscillation source
JP6450204B2 (en) * 2015-01-28 2019-01-09 株式会社ヨコオ High frequency oscillator
JP6666652B2 (en) * 2015-02-06 2020-03-18 株式会社ヨコオ High frequency oscillator

Also Published As

Publication number Publication date
JPS58177010A (en) 1983-10-17

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