JPH02141404A - Refining apparatus for gaseous hydrogen - Google Patents

Refining apparatus for gaseous hydrogen

Info

Publication number
JPH02141404A
JPH02141404A JP63293518A JP29351888A JPH02141404A JP H02141404 A JPH02141404 A JP H02141404A JP 63293518 A JP63293518 A JP 63293518A JP 29351888 A JP29351888 A JP 29351888A JP H02141404 A JPH02141404 A JP H02141404A
Authority
JP
Japan
Prior art keywords
gas
hydrogen gas
purification
catalyst
adsorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63293518A
Other languages
Japanese (ja)
Other versions
JP2627792B2 (en
Inventor
Yasusada Miyano
安定 宮野
Fushinobu Asano
浅野 節信
Kenji Otsuka
健二 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Pionics Ltd
Original Assignee
Japan Pionics Ltd
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Filing date
Publication date
Application filed by Japan Pionics Ltd filed Critical Japan Pionics Ltd
Priority to JP63293518A priority Critical patent/JP2627792B2/en
Publication of JPH02141404A publication Critical patent/JPH02141404A/en
Application granted granted Critical
Publication of JP2627792B2 publication Critical patent/JP2627792B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Separation Of Gases By Adsorption (AREA)
  • Hydrogen, Water And Hydrids (AREA)

Abstract

PURPOSE:To stably refine gaseous hydrogen in a high pure state by providing plural systems of the refining part in which the reaction cylinder converting oxygen impurities into water is connected in series with the adsorption cylinder adsorbing impurities in the gaseous hydrogen. CONSTITUTION:This refining apparatus of gaseous hydrogen is provided with >=2 systems of the refining parts A, B in which the refining cylinder 1 and the adsorption cylinder 2 are connected in series. In the reaction cylinder 1, the catalyst converting the oxygen impurities in the gaseous hydrogen into water is packed. In the adsorption cylinder 2, the impurities which are contained in the gaseous hydrogen and introduced from the reaction cylinder 1, such as water and cabon dioxide, are adsorbed and removed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は水素ガスの精製装置に関し、さらに詳細には水
素ガス中に含有される酸素、水および炭酸ガスなどの不
純物を除去することによって高純度の精製水素ガスを得
るための水素ガスの精製装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a hydrogen gas purification device, and more particularly, to a hydrogen gas purification device that purifies hydrogen gas by removing impurities such as oxygen, water, and carbon dioxide contained in hydrogen gas. The present invention relates to a hydrogen gas purification device for obtaining purified hydrogen gas of high purity.

半導体プロセスなどでは水素ガスが多量に使用されてい
るが、最近の半導体の高度集積化の急速な進展と共に水
素ガスも極めて高純度のものが要求されている。
Hydrogen gas is used in large quantities in semiconductor processes and the like, but with the recent rapid progress in the high degree of integration of semiconductors, extremely high purity hydrogen gas is required.

〔従来の技術〕[Conventional technology]

水素ガス中に不純物として含有される少量の酸素、水分
および炭酸ガスなどを除去して精製ガスを得るための装
置としてNi、 Cuなとの触媒により酸素を水に転換
する反応筒と合成ゼオライトなどの吸着剤により水分お
よび炭酸ガスなどを吸着除去するための吸着筒とを組合
わせた装置があり、水素ガスを常温で精製できることな
どから比較的多く用いられている。この場合には吸着剤
については不純物の吸着量が増加すると吸着剤の再生が
必要となるため、ガスの精製を連続的におこなうには吸
着筒は2筒とし、これらを交互に切替えて使用される。
A device for obtaining purified gas by removing small amounts of oxygen, moisture, carbon dioxide, etc. contained as impurities in hydrogen gas, including a reaction column and synthetic zeolite that converts oxygen into water using a catalyst such as Ni and Cu. There is a device that combines an adsorption cylinder for adsorbing and removing moisture, carbon dioxide, etc. with an adsorbent, and it is relatively widely used because hydrogen gas can be purified at room temperature. In this case, as the amount of adsorbed impurities increases, the adsorbent must be regenerated, so in order to continuously purify the gas, two adsorption cylinders are used, and these are used by switching alternately. Ru.

一方、反応筒については触媒が水素ガス雰囲気下にあり
、常に活性が維持され再生処理は不要とされて1簡のみ
で複数の吸着筒に共通使用され、例えば第2図に示すよ
うなフローシートの装置とされている。
On the other hand, with regard to the reaction column, the catalyst is under a hydrogen gas atmosphere, and its activity is always maintained and regeneration treatment is not necessary, so only one reactor column is used in common for multiple adsorption columns.For example, a flow sheet as shown in Figure 2 is used. It is said to be a device for

第2図において、Ni、 Cuなとの触媒が充填された
反応筒11の入口および出口は原料ガスの供給路14お
よび反応ガスの流路とそれぞれ接続されている。一方、
合成ゼオライトなどの吸着剤が充填され、かつヒーター
Hが取付けられた吸着筒12および12の入口はそれぞ
れ流路13aおよび13bと接続され、流路13aおよ
び13bは分岐してその一方は弁VllaおよびVll
bをそれぞれ介して反応ガスの流路と、また、他方は弁
V12aおよびV12bを介して再生排ガスの排出路1
5と接続されている。さらに、吸着筒12および12の
出口は流路16aおよび16bと接続され、流路16a
および16bは分岐してその一方は弁V13aおよび■
13bを介して精製ガスの抜出し路17に、また、他方
は弁V14aおよびV14bを介して再生用の精製自己
ガスの供給路18に接続されている。
In FIG. 2, the inlet and outlet of a reaction tube 11 filled with catalysts such as Ni and Cu are connected to a raw material gas supply path 14 and a reaction gas flow path, respectively. on the other hand,
The inlets of the adsorption cylinders 12 and 12 filled with an adsorbent such as synthetic zeolite and equipped with a heater H are connected to channels 13a and 13b, respectively, and the channels 13a and 13b are branched, and one of them is connected to the valves Vlla and 13b. Vll
b, respectively, and the other is a regeneration exhaust gas discharge path 1 via valves V12a and V12b.
5 is connected. Furthermore, the outlets of the adsorption cylinders 12 and 12 are connected to the channels 16a and 16b, and the outlets of the adsorption columns 12 and 12 are connected to the channels 16a and 16b.
and 16b are branched, one of which is the valve V13a and
The other side is connected to a purification gas extraction passage 17 via valves V14a and V14b, and to a regeneration purified self-gas supply passage 18 via valves V14a and V14b.

供給路14から反応筒11に入った原料水素ガスは触媒
と接触することにより水素ガス中に含有される酸素ガス
が水素ガスと反応して水に転換され、接触後の水素ガス
は出口から反応ガスの流路にでる。反応筒から出たガス
の吸着精製は吸着筒12および12を交互に切替えて使
用することにより連続的におこなわれる。例えば左側の
吸着筒12が精製工程のときには弁Vllaおよびv1
3aが開かれて反応筒11を出たガスは弁Vllaおよ
び流路13aを経て左側の吸着筒12に入り、吸着剤と
接触することにより、水分、炭酸ガスなどの不純物が吸
着除去されて精製され、流路16a、弁V13aおよび
抜出し路17を経て抜き出される。この間右側の吸着筒
12では吸着剤の再生がおこなわれるが、まず、ヒータ
ーHにより吸着剤が加熱された状態で弁V12bおよび
V14bが開かれることにより再生用の精製自己ガス(
精製水素ガスの一部)は供給路18から弁V14bおよ
び流路16bを経て、右側の吸着筒12に入る。ここで
吸着剤に吸着されていた水分および炭酸ガスなどの不純
物は加熱によって脱着し、吸着剤は再生される。吸着剤
から脱着した不純物は精製自己ガスとともに流路13b
および弁V12bを経て再生排ガスとして排出路15か
ら排出される。このようにして吸着剤の再生がおこなわ
れる一方、反応筒11では吸着筒12および12間での
交互の切替えには関係なく常に連続的に原料ガスが流さ
れて転換反応が続けられる。
The raw hydrogen gas that has entered the reaction tube 11 from the supply path 14 comes into contact with the catalyst, so that the oxygen gas contained in the hydrogen gas reacts with the hydrogen gas and is converted to water, and after the contact, the hydrogen gas is reacted from the outlet. Out to the gas flow path. Adsorption purification of the gas discharged from the reaction column is carried out continuously by alternately using the adsorption columns 12 and 12. For example, when the left adsorption cylinder 12 is in the purification process, the valves Vlla and v1
3a is opened and the gas exits the reaction column 11, passes through the valve Vlla and the flow path 13a, enters the adsorption column 12 on the left side, and comes into contact with the adsorbent to adsorb and remove impurities such as moisture and carbon dioxide, resulting in purification. and is extracted through the flow path 16a, the valve V13a, and the extraction path 17. During this time, the adsorbent is regenerated in the adsorption cylinder 12 on the right side, but first, the purified self-gas for regeneration (
A portion of the purified hydrogen gas) enters the adsorption cylinder 12 on the right side from the supply path 18 through the valve V14b and the flow path 16b. Impurities such as moisture and carbon dioxide adsorbed on the adsorbent are desorbed by heating, and the adsorbent is regenerated. The impurities desorbed from the adsorbent flow into the flow path 13b together with the purified self-gas.
The regenerated exhaust gas is then discharged from the exhaust passage 15 through the valve V12b. While the adsorbent is regenerated in this manner, the conversion reaction continues in the reaction column 11 by constantly flowing the raw material gas regardless of the alternating switching between the adsorption columns 12 and 12.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

半導体の高度集積化が進み、サブミクロン級の超LSI
の製造プロセスなどに対し、さらに精製ガスの純度向上
に対する要求が高まるにつれ、このような精製装置を用
いても時間経過と共に精製ガスの純度が徐々に低下して
くるため、高純度の精製ガスが連続的に安定して得られ
ないということが判明してきた。
As semiconductors become more highly integrated, submicron-level ultra-LSI
As the demand for improving the purity of purified gas increases in the manufacturing process of It has become clear that it cannot be obtained continuously and stably.

〔課題を解決するための手段〕[Means to solve the problem]

本発明者らは、これらの純度低下の原因を究明し、水素
ガスを常に高純度状態で精製しうる装置を得るべく鋭意
研究を進めた結果、Ni、 Cuなとの触媒を常温で用
いた場合に基本的には酸素は水素と反応して水に転換さ
れるが、同時に酸素、−酸化炭素などの不純成分が触媒
の表面で固定されて活性が徐々に低下することおよびこ
のような状態となった触媒は水素雰囲気下で加熱するこ
とによって元の活性化状態に再生しうろことを見いだし
、本発明に到達した。
The inventors of the present invention investigated the causes of these decreases in purity, and as a result of conducting intensive research to obtain a device that can constantly refine hydrogen gas in a highly pure state, the inventors discovered that a catalyst containing Ni or Cu was used at room temperature. Basically, oxygen reacts with hydrogen and is converted to water, but at the same time, impurity components such as oxygen and carbon oxides are fixed on the surface of the catalyst and the activity gradually decreases. It was discovered that the catalyst can be regenerated to its original activated state by heating in a hydrogen atmosphere, leading to the present invention.

すなわち本発明は、水素ガス中に不純物として含有され
る酸素ガスを水に転換するための触媒が充填された反応
筒と、該反応筒から導かれた水素ガス中に含有される水
分および炭酸ガスなどの不純物を吸着除去するための吸
着筒とを備えてなる水素ガスの精製装置において、該反
応筒と吸着筒とが直列に接続された精製部を少なくとも
2系列備えてなることを特徴とする水素ガスの精製装置
である。
That is, the present invention provides a reaction tube filled with a catalyst for converting oxygen gas contained as an impurity in hydrogen gas into water, and a reaction tube filled with a catalyst for converting oxygen gas contained as an impurity in hydrogen gas into water, and moisture and carbon dioxide contained in the hydrogen gas led from the reaction tube. A hydrogen gas purification device comprising an adsorption column for adsorbing and removing impurities such as This is a hydrogen gas purification device.

本発明は不純物として酸素、−酸化炭素、炭酸ガスおよ
び水などを含有する水素ガスの高純度精製に使用される
。
The present invention is used for high purity purification of hydrogen gas containing impurities such as oxygen, carbon oxide, carbon dioxide, and water.

本発明を図面によって例示し具体的に説明する。The present invention will be illustrated and specifically explained with reference to the drawings.

第1図は本発明の水素ガス精製装置のフロー一 シートである。Figure 1 is a flowchart of the hydrogen gas purification apparatus of the present invention. It is a sheet.

第1図においてNi、 Cuなどの触媒が充填された反
応筒1と合成ゼオライトなどの吸着剤が充填された吸着
筒2とが直列に接続され、かつ、それぞれの筒にヒータ
ーHが配設されてなる2系列の精製部AおよびBが設け
られている。精製部AおよびBそれぞれの反応筒1およ
び1は流路3aおよび3bと接続され、流路3aおよび
3bのは分岐してその一方は弁ViaおよびVlbを介
して原料ガスの供給路4に、他方は弁V2aおよびV2
bを介してそれぞれ再生排ガスの排出路5に接続されて
いる。
In Fig. 1, a reaction cylinder 1 filled with a catalyst such as Ni or Cu and an adsorption cylinder 2 filled with an adsorbent such as synthetic zeolite are connected in series, and a heater H is arranged in each cylinder. Two lines of purification sections A and B are provided. Reaction columns 1 and 1 of purification sections A and B are connected to channels 3a and 3b, and one of the channels 3a and 3b is branched, and one of them is connected to the source gas supply channel 4 through valves Via and Vlb. The other is valves V2a and V2
They are each connected to the regenerated exhaust gas discharge path 5 via b.

また、精製部AおよびBそれぞれの吸着筒2および2は
流路6aおよび6bと接続され、流路6aおよび6bは
分岐してその一方は弁V3aおよびV3bを介して精製
ガスの抜出し路7に、他方は弁V4aおよびV4bを介
して抜出し路7から分岐した再生用自己ガス(精製水素
ガスの一部)の供給路8にそれぞれ接続されている。
In addition, the adsorption cylinders 2 and 2 of purification sections A and B are connected to channels 6a and 6b, and the channels 6a and 6b are branched, and one of them is connected to the extraction channel 7 for purified gas via valves V3a and V3b. , the other one is connected to a regeneration self-gas (part of purified hydrogen gas) supply path 8 branched from the extraction path 7 via valves V4a and V4b.

〔作 用〕[For production]

水素ガスの精製は2系列の精製部AおよびBを交互に切
替えて使用することにより連続的におこなわれる。
Purification of hydrogen gas is carried out continuously by alternately switching between two lines of purification sections A and B.

例えば精製部Aが精製工程のときには弁ViaおよびV
3aが開かれることによって酸素、−酸化炭素、炭酸ガ
スなどの不純物を含有する原料水素ガスは供給路4から
弁Viaおよび流路3aを経て精製部Aの反応筒1に入
り、Ni、 Cuなとの触媒と接触して水素ガス中に含
有される酸素のほとんどは水素と反応して水に転換され
るが、このとき少量の酸素および一酸化炭素などの不純
物は触媒表面に捕捉されてガス中から除去される。次い
でガスは吸着筒2に入り、合成ゼオライトなどの吸着剤
と接触して炭酸ガスおよび水分などの不純物が吸着除去
され、高純度に精製される。吸着筒1から出た精製ガス
は流路6a、弁V3aおよび精製ガスの抜出し路7を経
て抜出される。
For example, when refining section A is in the refining process, valves Via and V
3a is opened, the raw hydrogen gas containing impurities such as oxygen, carbon oxide, and carbon dioxide enters the reaction column 1 of the refining section A from the supply path 4 via the valve Via and the flow path 3a, and enters the reaction column 1 of the refining section A. Most of the oxygen contained in the hydrogen gas reacts with the hydrogen and is converted to water, but at this time, a small amount of impurities such as oxygen and carbon monoxide are captured on the catalyst surface and are converted into gas. removed from inside. The gas then enters the adsorption column 2 and comes into contact with an adsorbent such as synthetic zeolite, where impurities such as carbon dioxide and water are adsorbed and removed, and the gas is purified to a high degree of purity. The purified gas coming out of the adsorption cylinder 1 is extracted through the flow path 6a, the valve V3a, and the purified gas extraction path 7.

この状態で長時間精製を続けると吸着剤に吸着された水
分および炭酸ガスなどの不純物が増加して吸着能力が低
下するばかりでなく、触媒についてもその表面で捕捉さ
れた酸素、−酸化炭素などの不純物が蓄積し、−酸化炭
素が除去できなくなる他、酸素を水に転換する触媒活性
も徐々に低下する傾向が出てくる。そのため、このよう
な影響が生ずる以前に精製は精製部Bに切替えられ、精
製部Aは触媒および吸着剤の再生工程に入る。
If refining is continued for a long period of time in this state, impurities such as moisture and carbon dioxide adsorbed on the adsorbent will increase, and the adsorption capacity will not only decrease, but also oxygen, carbon oxides, etc. trapped on the surface of the catalyst will increase. impurities accumulate, making it impossible to remove carbon oxide, and the catalytic activity for converting oxygen to water also tends to gradually decrease. Therefore, before such an effect occurs, purification is switched to purification section B, and purification section A enters the catalyst and adsorbent regeneration step.

弁VlbおよびV3bを開くと同時に弁ViaおよびV
3aを閉じることによって原料水素ガスは精製部Bの系
列に流れて精製がおこなわれる。次いで精製部Aの反応
筒1および吸着筒2をヒーターHおよびHで触媒および
吸着剤を加熱しながら弁V2aおよびV4aを開くこと
により精製水素ガスの一部は再生用ガスとして精製自己
ガスの供給路8から弁V4aおよび流路6aを経て精製
部Aの吸着筒2に入る。ここで吸着剤に吸着されていた
炭酸ガスおよび水などの不純物は加熱によって脱着し、
再生用ガスとともに反応筒1に入るが、ここでは触媒に
捕捉されていた微量の酸素が加熱状態で水素と反応して
水に転換されると同時に一酸化炭素などの微量不純物も
離脱し、−酸化炭素および炭酸ガスはNi触媒により水
素と反応してメタンに転換され、再生用ガスとともに流
路3aおよび弁V2aを経て再生排ガスの排出路5から
排出される。これによって吸着剤は再生され、かつ触媒
表面は高温水素還元によって活性化され次の精製工程に
備えられる。
At the same time as opening valves Vlb and V3b, valves Via and V
By closing 3a, the raw hydrogen gas flows into the purification section B series and is purified. Next, by opening valves V2a and V4a while heating the catalyst and adsorbent in reaction column 1 and adsorption column 2 of purification section A with heaters H and H, a part of the purified hydrogen gas is used as regeneration gas and purified self-gas is supplied. From channel 8, it enters adsorption cylinder 2 of purification section A via valve V4a and flow channel 6a. Impurities such as carbon dioxide and water that were adsorbed on the adsorbent are desorbed by heating.
It enters the reaction tube 1 together with the regeneration gas, where the trace amount of oxygen captured by the catalyst reacts with hydrogen under heating and is converted to water, while at the same time trace impurities such as carbon monoxide are also released. The carbon oxide and carbon dioxide react with hydrogen by the Ni catalyst and are converted into methane, which is discharged together with the regeneration gas from the regeneration exhaust gas discharge path 5 via the flow path 3a and the valve V2a. This regenerates the adsorbent and activates the catalyst surface by high temperature hydrogen reduction in preparation for the next purification step.

このように吸着剤と同時に触媒についても加熱再生をお
こなうことにより活性が維持され、水素ガスは常に安定
した状態で高純度に精製される。
By heating and regenerating the catalyst at the same time as the adsorbent, the activity is maintained, and hydrogen gas is always purified to a high degree of purity in a stable state.

本発明において、精製部となる反応筒および吸着筒は必
ずしも個々の筒とする必要はなく、両者を合わせて1つ
の筒とし、これに触媒および吸着剤が充填された形態で
あってもよい。また、精製部は、通常は2系列とされる
が、所望により3系列以上としてもよい。反応筒の再生
は吸着筒と同じ周期でおこなわれるため、その大きさな
どは再生サイクルの時間などに応じて定められる。
In the present invention, the reaction column and the adsorption column which serve as the purification section do not necessarily have to be separate tubes, but may be combined into one tube filled with a catalyst and an adsorbent. Further, the purification section usually has two lines, but may have three or more lines if desired. Since the reaction column is regenerated at the same cycle as the adsorption column, its size is determined depending on the regeneration cycle time and other factors.

〔発明の効果〕〔Effect of the invention〕

本発明の水素ガス精製装置は従来1簡のみであった反応
筒を吸着筒と同様に少なくとも2筒とし吸着剤の再生と
同時に触媒の再生をおこなうようにしたものであり、こ
れによって従来技術では把握し得なかった長時間使用に
おける触媒の活性低下による精製ガスの僅かな純度低下
をも防止できると同時に一酸化炭素の除去も確実におこ
なうことができ、半導体プロセスなどに連続的に供給さ
れる水素ガスを常に高純度状態で安定して精製すること
が可能となった。しかも再生を繰り返しておこなうこと
ができるため、反応筒についても小型のものでよく、装
置は全体としてコンパクト化され、より狭いスペースで
の設置も可能となった。
The hydrogen gas purification device of the present invention has at least two reaction columns, like the adsorption column, instead of only one in the past, so that the catalyst can be regenerated at the same time as the adsorbent is regenerated. It is possible to prevent a slight decrease in the purity of purified gas due to a decrease in catalyst activity during long-term use, which could not be detected, and at the same time, it can also reliably remove carbon monoxide, allowing it to be continuously supplied to semiconductor processes, etc. It has become possible to consistently refine hydrogen gas in a highly pure state. Moreover, since regeneration can be repeated, the reaction tube only needs to be small, making the device more compact as a whole and allowing it to be installed in a narrower space.

〔実施例〕〔Example〕

第1図に示したと同様の構成の精製装置で、Ni系触媒
610gを充填した内径43fflII+の反応筒と、
モレキュラーシーブ5Aを190g充填した内径28.
4闘の吸着筒を直列に接続してなる精製部を2系列有す
る精製装置を用いて水素ガスの精製をおこなった。
A refining apparatus having the same configuration as shown in FIG.
Inner diameter 28. Filled with 190g of molecular sieve 5A.
Hydrogen gas was purified using a purification device having two lines of purification sections each consisting of four adsorption cylinders connected in series.

原料ガスとして水素ガスにマスフローコントローラーを
用いて酸素、−酸化炭素および炭酸ガスがそれぞれ10
ppmとなるように添加しながら圧力5Kgf/cボG
、精製流量2.7Nn(/hで供給し1、精製部各系列
の切替え周期を8時間毎として連続精製をおこない、そ
の精製ガス純度を分析した。酸素については微量酸素分
析計(富士電気製造■製)、−酸化炭素および炭酸ガス
についてはFIDガスクロマトグラフを用いて分離カラ
ム出口のガスを水素の存在下に600℃でNi触媒上で
接触させ、−酸化炭素および炭酸ガスをメタンに変換し
た後、FID (水素炎イオン化検出器〉に導いて分析
した。結果を第1表に示す。
Oxygen, -carbon oxide, and carbon dioxide gas were each mixed with 10% of hydrogen gas as a raw material gas using a mass flow controller.
Pressure 5Kgf/c BoG while adding so that it becomes ppm.
, purification flow rate was 2.7Nn (/h), and continuous purification was performed with a switching cycle of each purification section every 8 hours, and the purity of the purified gas was analyzed.Oxygen was measured using a trace oxygen analyzer (Fuji Electric - For carbon oxide and carbon dioxide gas, the gas at the outlet of the separation column was brought into contact with a Ni catalyst at 600°C in the presence of hydrogen using an FID gas chromatograph, and - carbon oxide and carbon dioxide were converted to methane. Thereafter, it was introduced into an FID (Flame Ionization Detector) for analysis.The results are shown in Table 1.

第1表 1サイクル(8時間)毎における原料ガス中に添加され
た一酸化炭素および炭酸ガスの合計量と再生排ガス中の
メタンの合計量の関係を第2表に示す。
Table 1 Table 2 shows the relationship between the total amount of carbon monoxide and carbon dioxide added to the raw material gas and the total amount of methane in the recycled exhaust gas in each cycle (8 hours).

第2表 一方の系列の精製部で精製をおこなう間に、他方の系列
の精製部では反応筒を200℃、吸着筒を350°Cに
それぞれ加熱しながら精製ガスの一部を用い、常圧下に
て7ONI/hの流量で、3時間加熱再生処理をおこな
った後、ヒーターをOFFとして、さらに、4.5時間
精製水素ガスを流して冷却し次回の精製に備えた。
Table 2 While purification is being carried out in the purification section of one series, in the purification section of the other series, a portion of the purified gas is used while heating the reaction column to 200°C and the adsorption column to 350°C, under normal pressure. After performing heating regeneration treatment for 3 hours at a flow rate of 7 ONI/h, the heater was turned off, and purified hydrogen gas was flowed for an additional 4.5 hours to cool and prepare for the next purification.

この再生処理時におけるNi系触媒および吸着剤からの
一酸化炭素および炭酸ガスの脱着を確認するため、8時
間再生サイクル毎の再生排ガス中のメタンの排出量の分
析をおこなった。
In order to confirm the desorption of carbon monoxide and carbon dioxide from the Ni-based catalyst and adsorbent during this regeneration process, the amount of methane emitted in the regenerated exhaust gas was analyzed for each 8-hour regeneration cycle.

第2表に示した如(Ni触媒および吸着剤で除去された
一酸化炭素および炭酸ガスのほとんど全量が再生時に触
媒および吸着剤から脱着すると同時に水素と反応してメ
タンに転換されて排出され、触媒および吸着剤が確実に
再生されていることが分かった。
As shown in Table 2 (almost the entire amount of carbon monoxide and carbon dioxide removed by the Ni catalyst and adsorbent is desorbed from the catalyst and adsorbent during regeneration and at the same time reacts with hydrogen to be converted to methane and discharged; It was found that the catalyst and adsorbent were regenerated reliably.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の水素ガスの精製装置の一例を示すフロ
ーシートであり、第2図は従来の水素ガスの精製装置の
フローシートである。 図面の各番号は以下の通りである。 1および113反応筒 2および12.吸着筒Aおよび
B、精製部 3a、3b;6a、6b、13a、13b
。 16aJ6b 、流路  4,8,14.および18供
給路5および15.排出路 7および17.抜出し路特
許出願人 日本バイオニクス株式会社代理人 弁理士 
小 堀 貞 文
FIG. 1 is a flow sheet showing an example of the hydrogen gas purification apparatus of the present invention, and FIG. 2 is a flow sheet of a conventional hydrogen gas purification apparatus. The drawing numbers are as follows. 1 and 113 reaction cylinders 2 and 12. Adsorption cylinders A and B, purification section 3a, 3b; 6a, 6b, 13a, 13b
. 16aJ6b, flow path 4, 8, 14. and 18 supply lines 5 and 15. Discharge passages 7 and 17. Extraction path patent applicant Japan Bionics Co., Ltd. Agent Patent attorney
Sadafumi Kobori

Claims (1)

【特許請求の範囲】[Claims] 水素ガス中に不純物として含有される酸素ガスを水に転
換するための触媒が充填された反応筒と、該反応筒から
導かれた水素ガス中に含有される水分および炭酸ガスな
どの不純物を吸着除去するための吸着筒とを備えてなる
水素ガスの精製装置において、該反応筒と吸着筒とが直
列に接続された精製部を少なくとも2系列備えてなるこ
とを特徴とする水素ガスの精製装置。
A reaction tube filled with a catalyst for converting oxygen gas contained as an impurity in hydrogen gas into water, and adsorbing impurities such as moisture and carbon dioxide contained in the hydrogen gas led from the reaction tube. A hydrogen gas purification device comprising an adsorption column for removing hydrogen gas, characterized in that the hydrogen gas purification device comprises at least two lines of purification sections in which the reaction column and the adsorption column are connected in series. .
JP63293518A 1988-11-22 1988-11-22 Hydrogen gas purification equipment Expired - Lifetime JP2627792B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63293518A JP2627792B2 (en) 1988-11-22 1988-11-22 Hydrogen gas purification equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63293518A JP2627792B2 (en) 1988-11-22 1988-11-22 Hydrogen gas purification equipment

Publications (2)

Publication Number Publication Date
JPH02141404A true JPH02141404A (en) 1990-05-30
JP2627792B2 JP2627792B2 (en) 1997-07-09

Family

ID=17795778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63293518A Expired - Lifetime JP2627792B2 (en) 1988-11-22 1988-11-22 Hydrogen gas purification equipment

Country Status (1)

Country Link
JP (1) JP2627792B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0441716U (en) * 1990-07-31 1992-04-09
JPH06199513A (en) * 1992-07-31 1994-07-19 Cvd Inc Method for production of silicon carbide having high polishing ability and high heat conductivity and use thereof
JP2007223861A (en) * 2006-02-24 2007-09-06 Kobe Steel Ltd Hydrogen compressing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0441716U (en) * 1990-07-31 1992-04-09
JPH06199513A (en) * 1992-07-31 1994-07-19 Cvd Inc Method for production of silicon carbide having high polishing ability and high heat conductivity and use thereof
JP2007223861A (en) * 2006-02-24 2007-09-06 Kobe Steel Ltd Hydrogen compressing apparatus

Also Published As

Publication number Publication date
JP2627792B2 (en) 1997-07-09

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