JPH0214367B2 - - Google Patents

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Publication number
JPH0214367B2
JPH0214367B2 JP18376581A JP18376581A JPH0214367B2 JP H0214367 B2 JPH0214367 B2 JP H0214367B2 JP 18376581 A JP18376581 A JP 18376581A JP 18376581 A JP18376581 A JP 18376581A JP H0214367 B2 JPH0214367 B2 JP H0214367B2
Authority
JP
Japan
Prior art keywords
bis
general formula
phenyl
group
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18376581A
Other languages
Japanese (ja)
Other versions
JPS58149916A (en
Inventor
Shunichi Numata
Koji Fujisaki
Tokuyuki Kaneshiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Hitachi Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP18376581A priority Critical patent/JPS58149916A/en
Publication of JPS58149916A publication Critical patent/JPS58149916A/en
Publication of JPH0214367B2 publication Critical patent/JPH0214367B2/ja
Granted legal-status Critical Current

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  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Description

【発明の詳现な説明】[Detailed description of the invention]

〔産業䞊の利甚分野〕 本発明は、耐熱性、耐湿性、䞊びに耐溶剀性が
すぐれたポリむミドを䞎えるポリアミド酞及び該
ポリむミドの補造方法に関する。 〔発明の背景〕 ポリむミド系ポリマヌが、PN接合の露出端郚
䞊の衚面安定化膜、倚局配線の局間絶瞁膜や、自
然界の攟射線特にα線によるメモリ玠子など
の゜フト゚ラヌ防止のためのシヌルド膜などずし
お有甚なこずは、既に呚知である。 しかし、通垞のポリむミドは吞湿率、透湿率が
倧きく、たた吞湿による接着性の劣化が倧きいな
どの欠点がある。すなわち、このような膜が吞湿
するず、PN接合郚でのリヌク電流が増加した
り、倚局配線やα線シヌルド膜の堎合、配線や電
極材料であるAlが腐食する問題がある。たた、
吞湿率が倧きいず補造プロセス䞊、急加熱によ぀
おポリむミド膜がふくれるずいう問題も起きるこ
ずがある。 本発明の目的は、䞊蚘埓来技術の欠点をなく
し、耐溶剀性がすぐれ、か぀、䜎吞湿性ずの熱安
定性を備えた有甚なポリむミドを䞎えるポリアミ
ド酞の補造方法を提䟛するにある。 〔発明の抂芁〕 䞊蚘目的は、 (a) 䞀般匏 および (b) 䞀般匏 〔匏䞭、は䟡あるいは䟡の有機
基、はアミノ基、カルバモむル基あるいはス
ルフアモむル基であり、−NH2に察しおオル゜
䜍に結合しおいる。はあるいはである。〕
で瀺されるアミン化合物ずテトラカルボン酞又
はその誘導䜓ずを反応させるこずを特城ずする
ポリアミド酞の補造方法によ぀お達成される。 曎に、 (a) 䞀般匏 および (b) 䞀般匏 〔匏䞭、は䟡あるいは䟡の有機
基、はアミノ基、カルバモむル基あるいはス
ルフアモむル基であり、−NH2に察しおオル゜
䜍に結合しおいる。はあるいはである。〕
で瀺されるアミノ化合物ずテトラカルボン酞又
はその誘導䜓を反応させお埗られるポリアミド
酞を脱氎瞮合反応させるこずによ぀お達成され
る。 発明者らは、皮々の化孊構造のポリむミドを合
成し、吞湿率、熱分解特性、耐溶剀性などの諞物
性を枬定した。その結果、䞋蚘の化孊構造のゞア
ミンDAPPず略すを甚いたポリむミドは、吞
湿率が非垞に小さくなるこずを芋出した。 しかし、メチル基の導入により耐熱性が倧幅に
䜎䞋しおしたう問題が生じた。そこで、−CH3基
を−CF3基にかえたゞアミン6FDAPPず略す
を䜿぀た結果、より吞湿率が小さく、か぀耐熱性
も党く䜎䞋しないこずを芋出した。 しかしながら、6FDAPPを䜿぀たポリむミド
にも、溶剀に溶け易く、か぀、ガラス転移枩床が
䜎䞋しおしたう問題点があ぀た。 発明者らは、この問題点の解決を鋭意怜蚎した
結果、ポリマ骚栌䞭に、ピロロン構造、あるいは
む゜むンドロキナゟリンゞオン構造などのラダヌ
構造を少し導入するず、これらの問題点が倧幅に
改善されるこずを芋出した。 本発明に最も重芁なラダヌ構造を䞎える䞀般匏
 で瀺されるアミン化合物は、−トリア
ミノベンれン、−トリアミノベンれ
ン、−テトラアミノベンれン、
−アミノベンゞゞン、3′−ゞアミノベンゞゞ
ン、4′−トリアミノゞプニル゚ヌテ
ル、3′4′−テトラアミノゞプニル゚
ヌテル、4′−トリアミノベンゟプノ
ン、3′4′−テトラアミノベンゟプノ
ン、4′−トリアミノゞプニルメタン、
3′4′−テトラアミノゞプニルメタ
ン、4′−トリアミノゞプニルサルフア
むド、3′4′−テトラアミノゞプニル
サルフアむド、4′−トリアミノゞプニ
ルスルホン、3′4′−テトラアミノゞフ
゚ニルスルホン、−ビス−ゞアミ
ノプニルプロパン、4′−ビス−
ゞアミノプノキシビプニル、−ビス
−−ゞアミノプノキシプニル
プロパン、−ビス−−ゞアミ
ノプノキシプニルヘキサフロロプロパン
などのトリたたはテトラアミン類、−ゞア
ミノ−−カルバモむルベンれン、−ゞア
ミノ−−カルバモむルベンれン、−ゞア
ミノ−−カルバモむルベンれン、−ゞア
ミノ−−ゞカルバモむルベンれン、−カ
ルバモむルベンゞゞン、3′−ゞカルバモむル
ベンゞゞン、−カルバモむル−4′−ゞアミ
ノゞプニル゚ヌテル、3′−ゞカルバモむル
−4′−ゞアミノゞプニル゚ヌテル、−カ
ルバモむル−4′−ゞアミノベンゟプノン、
3′−ゞカルバモむル−4′−ゞアミノベン
ゟプノン、−カルバモむル−4′−ゞアミ
ノゞプニルメタン、3′−ゞカルバモむル−
4′−ゞアミノゞプニルメタン、−カルバ
モむル−4′−ゞアミノゞプニルサルフアむ
ド、3′−ゞカルバモむル−4′−ゞアミノ
−ゞプニルサルフアむド、−カルバモむル−
4′−ゞアミノゞプニルスルホン、3′−
ゞカルバモむル−4′−ゞアミノゞプニルス
ルホン、−ビス−カルバモむル−−
アミノプニルプロパン、−ビス−
カルバモむル−−アミノプニルヘキサフロ
ロプロパン、4′−ビス−カルバモむル−
−アミノプノキシビプニル、−ビ
ス−−カルバモむル−−アミノプノ
キシプニルプロパン、−ビス−
−カルバモむル−−プノキシプニル
ヘキサフロロプロパンなどのカルバモむル基を
ケあるいはケも぀た芳銙族ゞアミン類などがあ
る。 −ゞアミノ−−スルフアモむルベンれ
ン、−ゞアミノ−−スルフアモむルベン
れン、−ゞアミノ−−スルフアモむルベ
ンれン、−ゞアミノ−−ゞスルフア
モむルベンれン、−スルフアモむルベンゞゞ
ン、3′−ゞスルフアモむルベンゞゞン、−
スルフアモむル−4′−ゞアミノゞプニル゚
ヌテル、3′−ゞスルフアモむル−4′−ゞ
アミノゞプニル゚ヌテル、−スルフアモむル
−4′−ゞアミノベンゟプノン、3′−ゞ
スルフアモむル−4′−ゞアミノベンゟプノ
ン、−スルフアモむル−4′−ゞアミノゞフ
゚ニルメタン、3′−ゞスルフアモむル−
4′−ゞアミノゞプニルメタン、−スルフアモ
むル−4′−ゞアミノゞプニルサルフアむ
ド、3′−ゞスルフアモむル−4′−ゞアミ
ノゞプニルサルフアむド、−スルフアモむル
−4′−ゞアミノゞプニルスルホン、
3′−ゞスルフアモむル−4′−ゞアミノゞプ
ニルスルホン、−ビス−スルフアモむ
ル−−アミノプニルプロパン、−ビ
ス−スルフアモむル−−アミノプニル
ヘキサフロロプロパン、4′−ビス−スル
フアモむル−−アミノプノキシビプニ
ル、−ビス−−スルフアモむル−
−アミノプノキシプニルプロパン、
−ビス−−スルフアモむル−−
アミノプノキシプニルヘキサフロロプロ
パンなどのスルフアモむル基をケあるいはケ
有する芳銙族ゞアミン類がある。 本発明に䜿甚できるテトラカルボン酞又はその
誘導䜓ずしおは、ピロメリツト酞、3′
4′−テトラカルボキシプニル、3′
4′−テトラカルボキシゞプニル、3′
4′−テトラカルボキシゞプニル゚ヌテル、
3′4′−テトラカルボキシゞプニル゚ヌテ
ル、3′4′−テトラカルボキシベンゟフ
゚ノン、3′4′−テトラカルボキシベン
ゟプノン、−テトラカルボキシ
ナフタレン、−テトラカルボキシ
ナフタレン、−テトラカルボキシ
ナフタレン、3′4′−テトラカルボキシ
ゞプニルメタン、−ビス−ゞカ
ルボキシプニルプロパン、−ビス
−ゞカルボキシプニルヘキサフロロ
プロパン、3′4′−テトラカルボキシゞ
プニルスルホン、−テトラカル
ボキシペリレン、−ビス−−
ゞカルボキシプノキシプニルプロパン
DAPP、−ビス−−ゞカル
ボキシプニノキシプニルヘキサフロロプ
ロパンなどの芳銙族テトラカルボン酞、たたは、
これらの酞二無氎物、䜎玚アルコヌルずの郚分的
な゚ステル化物などが䜿甚できる。 たた、高耐熱性が芁求されない堎合、ブタンテ
トラカルボン酞、シクロペンタンテトラカルボン
酞などの脂肪族のテトラカルボン酞又はそれらの
誘導䜓を利甚しおもよい。 たた、本発明においお、芳銙族ゞアミンずし
お、䞀般匏 で瀺される、−ビス−−アミノフ
゚ノキシプニルヘキサフロロプロパン、
−ビス−−アミノプノキシフ
゚ニルヘキサフロロプロパン、−ビス
−−アミノプノキシプニルヘキサ
フロロプロパン、−−−アミノプノキ
シプニル−−−−アミノプノキ
シプニルヘキサフロロプロパン、−
−−アミノプノキシプニル−−
−−アミノプノキシプニルヘキサフ
ロロプロパン、−−−アミノプノキ
シプニル−−−−アミノプノキ
シプニルヘキサフロロプロパンだけでな
く、耐湿性や耐熱性をあたり䜎䞋させない範囲に
おいお、通垞䜿甚される芳銙族ゞアミンを䜵甚し
おもよい。 芳銙族ゞアミンずしおは、次のようなものが挙
げられる。すなわち、−プニレンゞアミン、
−プニレンゞアミン、ベンゞゞン、4″−
ゞアミノタヌプニル、−ゞアミノクオ
ヌタヌプニル、4′−ゞアミノゞプニル゚
ヌテル、4′−ゞアミノゞプニルメタン、ゞ
アミノゞプニルスルホン、−ビス−
アミノプニルプロパン、−ビス−
アミノプニルヘキサフロロプロパン、
−ゞアミノナフタレン、−ゞアミノナフタ
レン、3′−ゞメチルベンゞゞン、3′−ゞ
メトキシベンゞゞン、3′−ゞメチル−
4′−ゞアミノゞプニル゚ヌテル、3′−ゞメ
チル−4′−ゞアミノゞプニルメタン、
−ビス−アミノプノキシベンれン、
4′−ビス−アミノプノキシビプニ
ル、−ビス−−アミノプノキシ
プニルプロパン、䞀般匏 のゞアミン、−テトラアミノ−
−プニレンゞアミンなどである。ここでは
〜である。 たた、ガラス、セラミツク、金属類ずの接着性
向䞊などの改善を目的に、䞀般匏 R2、R4は䟡の有機基、R1、R3は䟡の有機
基、はより倧きい敎数 で衚わされるシリコヌン含有ゞアミンを䜵甚しお
もよい。 本発明においお、6FDAPPなどの䞀般匏
で衚わされるゞアミン、テトラカルボン酞誘導
䜓、および䞀般匏 なる化合物あるいは他のゞアミンを反応させ
おポリマを埗る堎合、その配合割合は、テトラカ
ルボン酞誘導䜓モルに察しお、䞀般匏の
ゞアミンず䞀般匏の化合物ずの和が0.9〜
1.1モルの範囲がよい。たた、他のゞアミンを䜵
甚する堎合は、テトラカルボン酞誘導䜓モルに
察しお、䞀般匏のゞアミンず䞀般匏
の化合物の他のゞアミンずの和が0.9〜1.1モルの
範囲がよい。 反応条件は、各原料を溶融状態で反応されおも
よいが、通垞は比范的䜎枩で溶剀䞭で反応させお
䞀旊ポリアミド酞ワニス前駆䜓を埗、次いで
塗垃などの加工をした埌に、加熱也燥、閉環させ
お最終的な倉性ポリむミドを埗るこずが望たし
い。ポリアミド酞を埗る堎合、テトラカルボン酞
誘導䜓が無氎物の堎合は−20〜50℃皋床がよく、
フリヌのカルボン酞や゚ステル化合物の堎合、40
〜200℃の枩床範囲がよい。その埌のむミド閉環
など、最終的なポリマヌにするには、200〜500℃
の高枩に加熱する必芁がある。たた、ポリアミド
酞ワニスを埗る堎合の溶媒ずしおは、−メチル
−−ピロリドン、−ゞメチルアセトアミ
ド、−ゞメチルホルムアミド、ゞメチルス
ルホキサむド、−ゞ゚チルホルムアミド、
ヘキサメチルホスホルアミド、スルホラン、テト
ラメチレンスルホン、クレゟヌル、プノヌル、
キシレノヌルなどが甚いられる。 本発明における反応をテトラカルボン酞誘導䜓
ずしお二無氎物を甚いる堎合、䞀般匏で衚わすず
䟋えば次のようになる。 䞊蚘䞀般匏䞭、R″は䟡の有機基、は䟡
の有機基を瀺す。 䞊蚘䞀般匏䞭、R″は䟡の有機基、は䟡
の有機基を瀺す。は−、−CO−あるい
は−SO2−を瀺す。 〔実斜䟋〕 次に、本発明を実斜䟋を瀺しお曎に具䜓的に説
明する。ただし、本発明は以䞋の実斜䟋に限定さ
れるものではない。 実斜䟋〜4.比范䟋 枩床蚈、撹拌機、塩化カルシりム管、および窒
玠ガス吹蟌口を備えた300c.c.の぀口フラスコに、
−ビス−−アミノプノキシフ
゚ニルヘキサフロロプロパン、3′−ゞアミ
ノベンゞゞン、ならびに反応溶媒ずしお−メチ
ル−−ピロリドンを衚に瀺した量を仕蟌み、
宀枩で撹拌混合しお溶解した。次に氷氎バスで玄
℃に冷华し、ベンゟプノンテトラカルボン酞
二無氎物BTDAを、衚に瀺した量を採取
し、反応熱で枩床が䞊がるので、15℃以䞊になら
ないように少しず぀添加した。酞無氎物が溶解し
た埌、反応枩床を宀枩に戻し、ワニス粘床の䞊昇
によ぀お撹拌棒に巻き䞊がる皋床になるたで撹拌
を続け所望のポリアミド酞ワニスを埗た。 次いで、回転塗垃機を甚いお、衚面SiO2膜䞊
に硬化埌の膜厚が玄20Όになるようにポリアミ
ド酞ワニスを塗垃した。硬化条件は、窒玠䞭で
200℃30分300℃1h400℃15分の条件で
加熱硬化し、ポリむミドフむルムを埗た。フむル
ム状で物性を枬定するため、ガラス板䞊に塗垃埌
200℃30分加熱凊理埌、䞀旊はがしお、金属枠
で固定し、さらに、300℃ず400℃で加熱凊理した
詊料を䜜成した。25℃75RHでの飜和吞湿率
及び耐熱性の目安ずしお、空気䞭で熱分解した堎
合、枛量するたでに100分かかる枩床、即ち
120℃のトリクロロベンれン䞭に20分間浞挬埌の
残存フむルム厚Siり゚ハ䞊の塗膜を枬定し
た。 なお、耐熱性の枬定は、フむルムを200℃10
分で也燥した埌、300℃minの昇枩速床で熱分
解枩床たで䞊げ、等枩で熱分解した。熱分解枩床
は少なくずも点で行ない、Arrheniusプロツト
から、耐熱性の目安ずなる䞊述の枩床を求めた。 ガラス転移枩床は、フむルム50Ό厚を甚
いお、Thermo Mechanical Analyzer真空理工
瀟補により、寞法倉化ず枩床の関係から求め
た。
[Industrial Application Field] The present invention relates to a polyamic acid that provides a polyimide with excellent heat resistance, moisture resistance, and solvent resistance, and a method for producing the polyimide. [Background of the Invention] Polyimide polymers have been used as surface stabilizing films on the exposed ends of PN junctions, interlayer insulating films in multilayer wiring, and for preventing soft errors in memory devices caused by natural radiation (particularly alpha rays). It is already well known that it is useful as a shielding film. However, ordinary polyimide has drawbacks such as high moisture absorption and moisture permeability, and significant deterioration of adhesive properties due to moisture absorption. That is, when such a film absorbs moisture, leakage current at the PN junction increases, and in the case of multilayer wiring or an α-ray shielding film, there is a problem that Al, which is the wiring and electrode material, corrodes. Also,
If the moisture absorption rate is high, there may be a problem in the manufacturing process that the polyimide film swells due to rapid heating. An object of the present invention is to provide a method for producing polyamic acid that eliminates the drawbacks of the prior art and provides a useful polyimide that has excellent solvent resistance, low hygroscopicity, and thermal stability. [Summary of the invention] The above objects are: (a) General formula and (b) general formula [In the formula (), R is a trivalent or tetravalent organic group, and X is an amino group, a carbamoyl group, or a sulfamoyl group, and is bonded to the ortho position to -NH2 . n is 1 or 2. ]
This is achieved by a method for producing a polyamic acid, which is characterized by reacting the amine compound represented by the formula with a tetracarboxylic acid or a derivative thereof. Furthermore, (a) General formula () and (b) general formula [In the formula (), R is a trivalent or tetravalent organic group, and X is an amino group, a carbamoyl group, or a sulfamoyl group, and is bonded to the ortho position to -NH2 . n is 1 or 2. ]
This is achieved by subjecting a polyamic acid obtained by reacting the amino compound represented by the above with a tetracarboxylic acid or a derivative thereof to a dehydration condensation reaction. The inventors synthesized polyimides with various chemical structures and measured various physical properties such as moisture absorption rate, thermal decomposition characteristics, and solvent resistance. As a result, we found that polyimide using diamine (abbreviated as DAPP) with the chemical structure shown below has a very low moisture absorption rate. However, the introduction of the methyl group caused a problem in that the heat resistance was significantly reduced. Therefore, a diamine (abbreviated as 6FDAPP) in which -CH 3 group was changed to -CF 3 group
It was found that the moisture absorption rate was lower and the heat resistance did not decrease at all. However, polyimide using 6FDAPP also had the problem of being easily soluble in solvents and having a low glass transition temperature. As a result of intensive study on how to solve these problems, the inventors found that these problems can be greatly improved by introducing a small amount of ladder structure such as pyrrolone structure or isoindoquinazolinedione structure into the polymer skeleton. I discovered that. General formula () giving the most important ladder structure to the present invention The amine compounds represented by are 1,2,3-triaminobenzene, 1,2,4-triaminobenzene, 1,2,4,5-tetraaminobenzene,
-aminobenzidine, 3,3'-diaminobenzidine, 3,4,4'-triamino diphenyl ether, 3,3',4,4'-tetraamino diphenyl ether, 3,4,4'-triamino Benzophenone, 3,3',4,4'-tetraaminobenzophenone, 3,4,4'-triaminodiphenylmethane,
3,3',4,4'-tetraminodiphenylmethane, 3,4,4'-triaminodiphenyl sulfide, 3,3',4,4'-tetraminodiphenyl sulfide, 3,4 , 4'-triaminodiphenylsulfone, 3,3',4,4'-tetraminodiphenylsulfone, 2,2-bis(3,4-diaminophenyl)propane, 4,4'-bis(3 ,4-
Diaminophenoxy)biphenyl, 2,2-bis{4-(3,4-diaminophenoxy)phenyl}
Tri- or tetraamines such as propane, 2,2-bis{4-(3,4-diaminophenoxy)phenyl}hexafluoropropane, 1,3-diamino-2-carbamoylbenzene, 1,3-diamino-4 -Carbamoylbenzene, 1,4-diamino-2-carbamoylbenzene, 1,4-diamino-2,5-dicarbamoylbenzene, 3-carbamoylbenzidine, 3,3'-dicarbamoylbenzidine, 3-carbamoyl-4,4 '-Diamino diphenyl ether, 3,3'-dicarbamoyl-4,4'-diaminodiphenyl ether, 3-carbamoyl-4,4'-diaminobenzophenone,
3,3'-Dicarbamoyl-4,4'-diaminobenzophenone, 3-carbamoyl-4,4'-diaminodiphenylmethane, 3,3'-dicarbamoyl-
4,4'-diaminodiphenylmethane, 3-carbamoyl-4,4'-diaminodiphenyl sulfide, 3,3'-dicarbamoyl-4,4'-diamino-diphenyl sulfide, 3-carbamoyl-
4,4'-diaminodiphenylsulfone, 3,3'-
dicarbamoyl-4,4'-diaminodiphenylsulfone, 2,2-bis(3-carbamoyl-4-
aminophenyl)propane, 2,2-bis(3-
Carbamoyl-4-aminophenyl)hexafluoropropane, 4,4'-bis(3-carbamoyl-
4-aminophenoxy)biphenyl, 2,2-bis{4-(3-carbamoyl-4-aminophenoxy)phenyl}propane, 2,2-bis{4-
(3-carbamoyl-4-phenoxy)phenyl}
1 carbamoyl group such as hexafluoropropane
There are aromatic diamines with one or two atoms. 1,3-diamino-2-sulfamoylbenzene, 1,3-diamino-4-sulfamoylbenzene, 1,4-diamino-2-sulfamoylbenzene, 1,4-diamino-2,5-dis Rufuamoylbenzene, 3-sulfamoylbenzidine, 3,3'-disulfamoylbenzidine, 3-
Sulfamoyl-4,4'-diaminodiphenyl ether, 3,3'-disulfamoyl-4,4'-diaminodiphenyl ether, 3-sulfamoyl-4,4'-diaminobenzophenone, 3,3'-disulfamoyl- 4,4'-diaminobenzophenone, 3-sulfamoyl-4,4'-diaminodiphenylmethane, 3,3'-disulfamoyl-4,
4'-Diaminodiphenylmethane, 3-sulfamoyl-4,4'-diaminodiphenyl sulfide, 3,3'-disulfamoyl-4,4'-diaminodiphenyl sulfide, 3-sulfamoyl-4,4'- Diaminodiphenylsulfone, 3,
3'-disulfamoyl-4,4'-diaminodiphenylsulfone, 2,2-bis(3-sulfamoyl-4-aminophenyl)propane, 2,2-bis(3-sulfamoyl-4-aminophenyl)
Hexafluoropropane, 4,4'-bis(3-sulfamoyl-4-aminophenoxy)biphenyl, 2,2-bis{4-(3-sulfamoyl-
4-aminophenoxy)phenyl}propane,
2,2-bis{4-(3-sulfamoyl-4-
There are aromatic diamines having one or two sulfamoyl groups, such as aminophenoxy)phenyl}hexafluoropropane. Tetracarboxylic acids or derivatives thereof that can be used in the present invention include pyromellitic acid, 3,3',4,
4'-tetracarboxyphenyl, 2,3,3',
4'-tetracarboxydiphenyl, 3,3',4,
4'-Tetracarboxydiphenyl ether, 2,
3,3',4'-tetracarboxydiphenyl ether, 3,3',4,4'-tetracarboxybenzophenone, 2,3,3',4'-tetracarboxybenzophenone, 2,3, 6,7-tetracarboxynaphthalene, 1,4,5,7-tetracarboxynaphthalene, 1,2,5,6-tetracarboxynaphthalene, 3,3',4,4'-tetracarboxydiphenylmethane, 2, 2-bis(3,4-dicarboxyphenyl)propane, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane, 3,3',4,4'-tetracarboxydiphenyl sulfone, 1,2,7,8-tetracarboxyperylene, 2,2-bis{4-(3,4-
Aromatic tetracarboxylic acids such as dicarboxyphenoxy)phenyl}propane (DAPP), 2,2-bis{4-(3,4-dicarboxyphenynoxy)phenyl}hexafluoropropane, or
These acid dianhydrides, partially esterified products with lower alcohols, etc. can be used. Furthermore, when high heat resistance is not required, aliphatic tetracarboxylic acids such as butanetetracarboxylic acid and cyclopentanetetracarboxylic acid or derivatives thereof may be used. In addition, in the present invention, as the aromatic diamine, the general formula () 2,2-bis{4-(p-aminophenoxy)phenyl}hexafluoropropane, represented by
2,2-bis{4-(m-aminophenoxy)phenyl}hexafluoropropane, 2,2-bis{4-(o-aminophenoxy)phenyl}hexafluoropropane, 2-{4-(p-aminophenoxy)phenyl} -2-{4-(m-aminophenoxy)phenyl}hexafluoropropane, 2-{4
-(m-aminophenoxy)phenyl}-2-{4
-(o-aminophenoxy)phenyl}hexafluoropropane, 2-{4-(o-aminophenoxy)phenyl}-2-{4-(p-aminophenoxy)phenyl}hexafluoropropane, as well as moisture resistance and heat resistance. A commonly used aromatic diamine may be used in combination within a range that does not significantly reduce the amount. Examples of aromatic diamines include the following. That is, m-phenylenediamine,
p-phenylenediamine, benzidine, 4,4″-
Diaminoterphenyl, 4,4-diaminoquarterphenyl, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, diaminodiphenyl sulfone, 2,2-bis(p-
aminophenyl)propane, 2,2-bis(p-
aminophenyl) hexafluoropropane, 1,5
-diaminonaphthalene, 2,6-diaminonaphthalene, 3,3'-dimethylbenzidine, 3,3'-dimethoxybenzidine, 3,3'-dimethyl-4,
4'-diaminodiphenyl ether, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 1,
4-bis(p-aminophenoxy)benzene,
4,4'-bis(p-aminophenoxy)biphenyl, 2,2-bis{4-(p-aminophenoxy)
phenyl}propane, general formula diamine, 2,3,5,6-tetraamino-p
- phenylene diamine, etc. Here m is 1
~3. In addition, for the purpose of improving adhesion with glass, ceramics, and metals, (R 2 and R 4 are divalent organic groups, R 1 and R 3 are monovalent organic groups p and q are integers greater than 1) A silicone-containing diamine represented by the following may be used in combination. In the present invention, the general formula () such as 6FDAPP
Diamines, tetracarboxylic acid derivatives, and general formula () represented by When obtaining a polymer by reacting a compound (or other diamine), the mixing ratio is such that the sum of the diamine of the general formula () and the compound of the general formula () is 0.9 per mole of the tetracarboxylic acid derivative. ~
A range of 1.1 mol is preferable. In addition, when using other diamines in combination, the diamine of general formula () and the general formula ()
The sum of the compound and other diamines is preferably in the range of 0.9 to 1.1 mol. The reaction conditions may be such that each raw material is reacted in a molten state, but usually it is reacted in a solvent at a relatively low temperature to obtain a polyamic acid varnish (precursor), then processed such as coating, and then heated. It is desirable to obtain the final modified polyimide by drying and ring-closing. When obtaining polyamic acid, if the tetracarboxylic acid derivative is anhydride, the temperature is preferably around -20 to 50℃;
For free carboxylic acids and ester compounds, 40
A temperature range of ~200°C is preferred. 200-500℃ for the final polymer, including subsequent imide ring closure.
It is necessary to heat it to a high temperature. In addition, as a solvent when obtaining a polyamic acid varnish, N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethylsulfoxide, N,N-diethylformamide,
Hexamethylphosphoramide, sulfolane, tetramethylene sulfone, cresol, phenol,
Xylenol etc. are used. When dianhydride is used as the tetracarboxylic acid derivative in the reaction of the present invention, the general formula is expressed as follows, for example. In the above general formula, R'' represents a tetravalent organic group, and R represents a trivalent organic group. In the above general formula, R'' represents a tetravalent organic group and R represents a trivalent organic group. Y represents -N=, -CO-N= or -SO 2 -N=. [Example] Next The present invention will now be described in more detail with reference to Examples. However, the present invention is not limited to the following Examples. Examples 1 to 4. Comparative Example 1 Thermometer, stirrer, chloride In a 300 c.c. four-necked flask equipped with a calcium tube and a nitrogen gas inlet,
2,2-bis{4-(4-aminophenoxy)phenyl}hexafluoropropane, 3,3'-diaminobenzidine, and N-methyl-2-pyrrolidone as a reaction solvent were charged in the amounts shown in Table 1,
The mixture was stirred and mixed at room temperature to dissolve. Next, cool to approximately 5℃ in an ice water bath, collect benzophenonetetracarboxylic dianhydride (BTDA) in the amount shown in Table 1, and take care not to exceed 15℃ as the temperature will rise due to the reaction heat. was added little by little. After the acid anhydride was dissolved, the reaction temperature was returned to room temperature, and stirring was continued until the viscosity of the varnish increased to the extent that it was rolled up on a stirring bar to obtain a desired polyamic acid varnish. Next, polyamic acid varnish was applied onto the surface SiO 2 film using a rotary coating machine so that the film thickness after curing would be about 20 ÎŒm. Curing conditions are in nitrogen
A polyimide film was obtained by heating and curing under the conditions of 200°C/30 minutes + 300°C/1 hour + 400°C/15 minutes. After coating on a glass plate to measure physical properties in film form.
After heat treatment at 200°C for 30 minutes, it was peeled off, fixed with a metal frame, and then heat-treated at 300°C and 400°C to create samples. As a guideline for saturated moisture absorption rate and heat resistance at 25℃/75%RH, the temperature at which it takes 100 minutes to lose 3% when thermally decomposed in air, i.e.
The remaining film thickness (coating film on Si wafer) was measured after immersion in trichlorobenzene at 120°C for 20 minutes. In addition, heat resistance was measured at 200℃/10
After drying for 1 minute, the temperature was raised to the pyrolysis temperature at a rate of 300°C/min, and pyrolysis was carried out isothermally. The thermal decomposition temperature was determined at at least four points, and the above-mentioned temperature, which is a measure of heat resistance, was determined from the Arrhenius plot. The glass transition temperature was determined from the relationship between dimensional change and temperature using a Thermo Mechanical Analyzer (manufactured by Shinku Riko Co., Ltd.) using a film (50 Όm thick).

【衚】 実斜䟋のポリアミド酞および、ポリむミドの
赀倖線吞収スペクトルを枬定した。その結果、ポ
リアミド酞には1660cm-1にアミドの吞収ず、1710
cm-1にカルボン酞の吞収が珟われた。加熱硬化し
たポリむミドには、1780cm-1にむミド環に起因す
る吞収ず、1620cm-1にピロロン環の−−に
起因する吞収が珟われ、䞀方、1660cm-1のアミド
酞に起因する吞収が、消倱した。これらの結果か
ら、目的ずするポリマヌが埗られたこずを確認で
きた。 䜆し、ポリアミド酞のワニスをフむルム状に塗
垃し、これを氎䞭に浞挬し、超音波掗浄噚で、30
分間ず぀回、蒞留氎で掗浄した埌、真空也燥し
お詊料を䜜成した。たた、そのフむルムを実斜䟋
ず同様にしおポリむミド化した。赀倖線吞収ス
ペクトルの枬定は、KBr錠剀法で行぀た。 実斜䟋〜7.比范䟋 実斜䟋〜ず同様の条件で、−メチル−
−ピロリドン䞭で、6FDAPP、4′−ゞアミノ
−−カルバモむルゞプニル゚ヌテル
DDEC、ピロメリツト酞二無氎物PMDA
ずBTDAを反応させお、ポリアミド酞ワニスを
埗た。さらに、Siり゚ハ䞊にポリむミド塗膜たた
はポリむミドフむルムを䜜成し、諞物性を枬定し
た。配合割合ならびに諞物性を衚に瀺した。
[Table] The infrared absorption spectra of the polyamic acid and polyimide of Example 4 were measured. As a result, polyamic acid has amide absorption at 1660 cm -1 and amide absorption at 1710 cm -1
Absorption of carboxylic acid appeared at cm -1 . In heat-cured polyimide, absorption due to the imide ring appears at 1780 cm -1 and absorption due to -C=N- of the pyrolone ring appears at 1620 cm -1 , while absorption due to amic acid at 1660 cm -1 appears. But it disappeared. From these results, it was confirmed that the desired polymer was obtained. However, polyamic acid varnish is applied in the form of a film, immersed in water, and washed in an ultrasonic cleaner for 30 minutes.
After washing with distilled water for 6 minutes each time, a sample was prepared by vacuum drying. Further, the film was converted into polyimide in the same manner as in Example 1. Infrared absorption spectra were measured using the KBr tablet method. Examples 5 to 7. Comparative Example 2 Under the same conditions as Examples 1 to 4, N-methyl-2
-6FDAPP, 4,4'-diamino-3-carbamoyl diphenyl ether (DDEC), pyromellitic dianhydride (PMDA) in pyrrolidone
was reacted with BTDA to obtain a polyamic acid varnish. Furthermore, polyimide coatings or polyimide films were prepared on Si wafers and their physical properties were measured. Table 2 shows the blending ratio and various physical properties.

【衚】 実斜䟋のポリアミド酞、およびポリむミドの
赀倖線吞収スペクトルを、実斜䟋の堎合ず同様
にしお行぀た。その結果、ポリアミド酞には、
1660cm-1ず1710cm-1にアミド酞に起因する吞収が
珟われ、硬化埌のポリむミドには、1780cm-1のむ
ミド環に起因する吞収ず、1620cm-1にむ゜むンド
ロキナゟリンゞオン環に起因する吞収が珟われ、
アミド酞に起因する吞収は消倱した。これらの結
果から、目的のポリマヌが埗られたこずを確認で
きた。 実斜䟋〜10.比范䟋 実斜䟋〜は同様の条件で、−メチル−
−ピロリドン䞭で、−ビス−−ア
ミノプノキシプニルヘキサフロロプロパ
ン6FDMAPPず略す、PMDAおよび3′−
ゞアミノベンゞゞンずを反応させお、ポリアミド
酞ワニスを埗た。次いで、フむルムを䜜成、ある
いはSiり゚ハ䞊に20Ό厚に塗垃しお、諞物性を
枬定した。その結果を衚に瀺した。
[Table] Infrared absorption spectra of the polyamic acid and polyimide of Example 7 were conducted in the same manner as in Example 4. As a result, polyamic acid has
Absorption due to amic acid appears at 1660cm -1 and 1710cm -1 , and absorption due to imide ring at 1780cm -1 and absorption due to isoindoquinazolinedione ring at 1620cm -1 appear in the polyimide after curing. appears,
Absorption due to amic acid disappeared. From these results, it was confirmed that the desired polymer was obtained. Examples 8 to 10. Comparative Example 3 In Examples 1 to 4, N-methyl-2
- in pyrrolidone, 2,2-bis{4-(m-aminophenoxy)phenyl}hexafluoropropane (abbreviated as 6FDMAPP), PMDA and 3,3'-
A polyamic acid varnish was obtained by reacting with diaminobenzidine. Next, a film was prepared or coated on a Si wafer to a thickness of 20 ÎŒm, and various physical properties were measured. The results are shown in Table 3.

【衚】 実斜䟋11〜13.比范䟋 実斜䟋〜ず同様の条件で、−メチル−
−ピロリドン䞭で、−ビス−−ア
ミノプノキシプニルヘキサフロロプロパ
ン6FDMAPPず、−カルバモむル−
4′−ゞアミノゞプニル゚ヌテルDDEC
−ビス−ゞカルボキシプノキシ
プニルヘキサフロロプロパン二無氎物
6FTCPPず略すずを反応させお、ポリアミド
酞ワニスを埗た。 次いで、フむルムならびにSiり゚ハ䞊に塗垃し
おむミド化した膜20Όを圢成しお、緒物性
を枬定した。その結果を衚に瀺した。
[Table] Examples 11 to 13. Comparative Example 4 Under the same conditions as Examples 1 to 4, N-methyl-2
- 2,2-bis{4-(m-aminophenoxy)phenyl}hexafluoropropane (6FDMAPP) and 3-carbamoyl-4,
4'-diaminodiphenyl ether (DDEC) 2,
2-bis{4(3,4-dicarboxyphenoxy)
Phenyl}hexafluoropropane dianhydride (abbreviated as 6FTCPP) was reacted to obtain a polyamic acid varnish. Next, an imidized film (20 ÎŒm) was formed by coating on a film and a Si wafer, and the physical properties were measured. The results are shown in Table 4.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、耐氎性及び耐溶剀性にすぐれ
た含フツ玠ポリむミドを䞎えるポリアミド酞なら
びに該ポリむミドを埗るこずができる。
According to the present invention, it is possible to obtain a polyamic acid that provides a fluorine-containing polyimide having excellent water resistance and solvent resistance, and the polyimide.

Claims (1)

【特蚱請求の範囲】  (a) 䞀般匏 および (b) 䞀般匏 〔匏䞭、は䟡あるいは䟡の有機
基、はアミノ基、カルバモむル基あるいはス
ルフアモむル基であり、−NH2に察しおオル゜
䜍に結合しおいる。はあるいはである。〕
で瀺されるアミン化合物ずテトラカルボン酞又
はその誘導䜓ずを反応させるこずを特城ずする
ポリアミド酞の補造方法。  (a) 䞀般匏 および (b) 䞀般匏 〔匏䞭、は䟡あるいは䟡の有機
基、はアミノ基、カルバモむル基あるいはス
ルフアモむル基であり、−NH2に察しおオル゜
䜍に結合しおいる。はあるいはである。〕
で瀺されるアミン化合物ずテトラカルボン酞又
はその誘導䜓を反応させお埗られるポリアミド
酞を脱氎瞮合反応させるこずを特城ずするポリ
むミドの補造方法。
[Claims] 1 (a) General formula and (b) general formula [In the formula (), R is a trivalent or tetravalent organic group, and X is an amino group, a carbamoyl group, or a sulfamoyl group, and is bonded to the ortho position to -NH2 . n is 1 or 2. ]
A method for producing a polyamic acid, which comprises reacting an amine compound represented by the formula with a tetracarboxylic acid or a derivative thereof. 2 (a) General formula and (b) general formula [In the formula (), R is a trivalent or tetravalent organic group, and X is an amino group, a carbamoyl group, or a sulfamoyl group, and is bonded to the ortho position to -NH2 . n is 1 or 2. ]
A method for producing a polyimide, which comprises subjecting a polyamic acid obtained by reacting an amine compound represented by the above with a tetracarboxylic acid or a derivative thereof to undergo a dehydration condensation reaction.
JP18376581A 1981-11-18 1981-11-18 Polyamic acid, polyaimide and their production Granted JPS58149916A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18376581A JPS58149916A (en) 1981-11-18 1981-11-18 Polyamic acid, polyaimide and their production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18376581A JPS58149916A (en) 1981-11-18 1981-11-18 Polyamic acid, polyaimide and their production

Publications (2)

Publication Number Publication Date
JPS58149916A JPS58149916A (en) 1983-09-06
JPH0214367B2 true JPH0214367B2 (en) 1990-04-06

Family

ID=16141571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18376581A Granted JPS58149916A (en) 1981-11-18 1981-11-18 Polyamic acid, polyaimide and their production

Country Status (1)

Country Link
JP (1) JPS58149916A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725642A (en) * 1985-04-29 1988-02-16 E. I. Du Pont De Nemours And Company Melt-fusible co-polyimide from diamine mixture
JPS62231222A (en) * 1986-03-31 1987-10-09 Nitto Electric Ind Co Ltd Solution for forming orientation film of liquid crystal

Also Published As

Publication number Publication date
JPS58149916A (en) 1983-09-06

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