JPH02145333A - Board for electric circuit and manufacture thereof - Google Patents
Board for electric circuit and manufacture thereofInfo
- Publication number
- JPH02145333A JPH02145333A JP29803788A JP29803788A JPH02145333A JP H02145333 A JPH02145333 A JP H02145333A JP 29803788 A JP29803788 A JP 29803788A JP 29803788 A JP29803788 A JP 29803788A JP H02145333 A JPH02145333 A JP H02145333A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- bond
- alumina
- nitride insulating
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 32
- 239000000956 alloy Substances 0.000 claims abstract description 32
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 22
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 17
- 239000010935 stainless steel Substances 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 229910018516 Al—O Inorganic materials 0.000 claims 1
- 239000010953 base metal Substances 0.000 abstract description 27
- 239000000203 mixture Substances 0.000 abstract description 20
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 64
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 6
- 238000005524 ceramic coating Methods 0.000 description 6
- 230000035939 shock Effects 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 3
- 238000007750 plasma spraying Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910018509 Al—N Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は基体となるベース金属に直接セラミックの絶縁
層を形成してなる放熱特性に優れた電気回路用基板およ
びその製造方法に関するものである。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to an electric circuit board with excellent heat dissipation properties, which is formed by directly forming a ceramic insulating layer on a base metal, and a method for manufacturing the same. .
（従来の技術）
従来、ハイブリッドＩＣ用の基板としてアルミナ基板が
知られている。しかしながら、近年高集積化、ハイパワ
ー化したハイブリッドＩＣ用の基板として、従来のアル
ミナ基板よりも熱伝導特性の良好なものが望まれている
。(Prior Art) Alumina substrates have been known as substrates for hybrid ICs. However, in recent years, substrates for hybrid ICs that have become highly integrated and powerful have been desired to have better thermal conductivity than conventional alumina substrates.
その−例として、第２図にその断面を示すように、銅等
のベース金属１１上にアルミナ等のセラミック材料をプ
ラズマ溶射しセラミック絶縁層１２を形成した溶射基板
が知られている。As an example, as shown in a cross section in FIG. 2, a thermal sprayed substrate is known in which a ceramic insulating layer 12 is formed by plasma spraying a ceramic material such as alumina onto a base metal 11 such as copper.
（発明が解決しようとする課題）
第２図に示す構造の溶射基板は、熱伝導特性および耐熱
性が良好となる利点はあるものの、ベース金属１１とセ
ラミック絶縁層１２とが化学的な結合をしていないため
、密着強度が充分に得られない問題があった。特に、ハ
イブリッドＩＣ°を使用する際の基板に対して高温と低
温の繰り返し条件が与えられるヒートサイクルにより、
ベース金属１１とセラミック絶縁層１２とがはく離しや
すくなる問題があった。(Problems to be Solved by the Invention) Although the thermal sprayed substrate having the structure shown in FIG. Therefore, there was a problem that sufficient adhesion strength could not be obtained. In particular, when using a hybrid IC°, the heat cycle in which the substrate is subjected to repeated high and low temperatures,
There is a problem in that the base metal 11 and the ceramic insulating layer 12 tend to peel off.
本発明の目的は上述した課題を解消して、ベース金属と
表面に被覆される絶縁層とが強固に密着して熱的なヒー
トサイクルを受けても境界面がはく離しない放熱特性に
優れた電気回路用基板およびその製造方法を提供しよう
とするものである。The purpose of the present invention is to solve the above-mentioned problems, and to provide an electric wire with excellent heat dissipation properties in which the base metal and the insulating layer coated on the surface are firmly adhered and the interface does not peel off even when subjected to thermal heat cycles. The present invention aims to provide a circuit board and a method for manufacturing the same.
（課題を解決するための手段）
本発明の電気回路用基板は、少な（ともＴｉ０．２〜０
．８重量％およびＣ０，０１〜０．５重量％を含有する
ステンレス鋼またはニッケル基合金、もしくは少なくと
もＴｉｎ、２〜５．０重量％およびｃ０． ｏｏｏｔ〜
０．０１重量％を含有する銅基合金からなるいずれかの
基体の表面に、Ａ Ｉｌ−［３−Ｔｉ−Ｃ結合で密着し
たアルミナ絶縁層、Ｓｉ−Ｎ−Ｔｉ−Ｃ結合で密着した
窒化ケイ素絶縁層またはＡ １−Ｎ−ｒｌ−ｃ結合で密
着した窒化アルミ絶縁層を有することを特徴とするもの
である。(Means for Solving the Problems) The electric circuit board of the present invention has a low Ti content (both Ti0.2 to 0).
．． Stainless steel or nickel-based alloy containing 8% by weight and C0.01-0.5% by weight, or at least Tin, 2-5.0% by weight and c0. ooot~
On the surface of any substrate made of a copper-based alloy containing 0.01 wt. It is characterized by having a silicon insulating layer or an aluminum nitride insulating layer closely adhered by A1-N-rl-c bonds.
また、本発明の電気回路基板の製造方法は、少なくとも
Ｔｉ０．２〜０．８重量％およびＣ０，０１〜０．５重
量％を含有するステンレス鋼またはニッケル基合金、も
しくは少なくともＴｉ ０．２〜５．０重量％および
Ｃ０．０００１〜０．０１重量％を含有する銅基合金の
うちのいずれかの基体の表面に、アルミナ、窒化ケイ素
または窒化アルミを被覆し、６００〜１０００℃の温度
で１０分間以上熱処理して、基体の表面にＡ ｌ−０−
Ｔｉ−Ｃ結合、Ｓｉ−Ｎ−Ｔｊ−Ｃ結合、または＾ｊ！
−Ｎ−Ｔｉ−Ｃ結合によってアルミナ絶縁層、窒化ケイ
素絶縁層または窒化アルミ絶縁層を形成することを特徴
とするものである。Further, the method for manufacturing an electric circuit board of the present invention can be carried out using stainless steel or a nickel-based alloy containing at least 0.2 to 0.8% by weight of Ti and 0.01 to 0.5% by weight of CO, or at least 0.2 to 0.8% by weight of Ti. Alumina, silicon nitride or aluminum nitride is coated on the surface of a copper-based alloy substrate containing 5.0% by weight and 0.0001 to 0.01% by weight of C, and at a temperature of 600 to 1000°C. After heat treatment for 10 minutes or more, Al-0-
Ti-C bond, Si-N-Tj-C bond, or ^j!
It is characterized in that an alumina insulating layer, a silicon nitride insulating layer, or an aluminum nitride insulating layer is formed by -N-Ti-C bonds.
（作 用）
上述した構成において、ベースとなる基体金属となるス
テンレス鋼、ニッケル基合金または銅基合金中に所定量
のＴｉおよびＣを含有させているため、例えば熱処理す
ることによりその表面に設けたアルミナ層、窒化ケイ素
層または窒化アルミ層あるいはこれらの混合物が基体金
属中に析出したＴｉＣと反応し界面に強固なへβ−〇−
Ｔｉ−Ｃ結合、５ｌ−Ｎ−Ｔ ｉ−Ｃ結合またはＡ ｉ
’ −Ｎ−Ｔ ｉ−Ｃ結合が形成でき、基体金属とアル
ミナ絶縁層、窒化ケイ素絶縁層または窒化アルミ絶縁層
等の絶縁層との間に化学的な結合による強固な密着絶縁
層を形成できる。(Function) In the above-mentioned configuration, since a predetermined amount of Ti and C are contained in the base metal of stainless steel, nickel-based alloy, or copper-based alloy, it is possible to provide Ti and C on the surface by heat treatment, for example. The alumina layer, silicon nitride layer, aluminum nitride layer, or a mixture thereof reacts with the TiC precipitated in the base metal, forming a strong β-〇- layer at the interface.
Ti-C bond, 5l-N-T i-C bond or A i
-N-T i-C bond can be formed, and a strong adhesion insulating layer can be formed by chemical bonding between the base metal and an insulating layer such as an alumina insulating layer, a silicon nitride insulating layer, or an aluminum nitride insulating layer. .
ＴｉおよびＣの添加量を限定する理由は以下の通りであ
る。まず、下限については、後述する実施例から明らか
なように、ステンレス鋼またはニッケル基合金の場合は
Ｔｉの含有率が０．゛２重量％未満またはＣの含有率が
０．０１重量％未満の組成、銅基合金の場合はＴ１の含
有率が０．２重量％未満またはＣの含有率が０．０００
１重量％未渦の組成のときは、アルミナ絶縁層、窒化ケ
イ素絶縁層または窒化アルミ絶縁層等の絶縁層のはく離
がみられるためである。また、ステンレス鋼またはニッ
ケル基合金の場合Ｃの含有率が０．５重量％を超え、銅
基合金の場合Ｃの含有率が０．０１重量％を超えると、
基体金属とアルミナ絶縁層、窒化ケイ素絶縁層または窒
化アルミ絶縁層との界面にカーボンの析出が起きて接着
強度が低下し絶縁層が脆くはく離し易くなる。さらに、
ステンレス鋼またはニッケル基合金の場合Ｔｉの含有率
が０．８重量％を超え、銅基合金の場合Ｔｉの含有率が
５．０重量％を超えると、熱処理の繰り返しによりＴｉ
Ｃ結合層の厚さが増加し、その結合の硬さのために厚く
なるとアルミナ絶縁層、窒化ケイ素絶縁層または窒化ア
ルミ絶縁層がはく離し易くなる。以上の理由から、ステ
ンレス鋼またはニッケル基合金ではＴｉを０．２〜０．
８重量％、Ｃを０．０１〜０．５重量％、銅基合金では
Ｔ１を０．２〜５．０重量％、Ｃを０．０００１〜０．
０１重量％であることが大切である。The reason for limiting the amounts of Ti and C added is as follows. First, regarding the lower limit, as is clear from the examples described later, in the case of stainless steel or nickel-based alloy, the Ti content is 0.゛Composition with a C content of less than 2% by weight or less than 0.01% by weight, in the case of a copper-based alloy, a T1 content of less than 0.2% by weight or a C content of 0.000%
This is because when the composition is 1% by weight without vortex, peeling of insulating layers such as an alumina insulating layer, a silicon nitride insulating layer, or an aluminum nitride insulating layer is observed. In addition, if the C content exceeds 0.5% by weight in the case of stainless steel or nickel-based alloy, and if the C content exceeds 0.01% by weight in the case of copper-based alloy,
Carbon precipitation occurs at the interface between the base metal and the alumina insulating layer, silicon nitride insulating layer, or aluminum nitride insulating layer, reducing adhesive strength and making the insulating layer brittle and easy to peel off. moreover,
If the Ti content exceeds 0.8% by weight in the case of stainless steel or nickel-based alloys, and exceeds 5.0% by weight in the case of copper-based alloys, repeated heat treatments will remove Ti.
As the thickness of the C-bonding layer increases, due to the hardness of the bond, the alumina, silicon nitride, or aluminum nitride insulating layer becomes easier to peel off. For the above reasons, in stainless steel or nickel-based alloys, the Ti content is 0.2 to 0.
8% by weight, 0.01 to 0.5% by weight of C, 0.2 to 5.0% by weight of T1 in copper-based alloys, and 0.0001 to 0.00% of C.
It is important that the content is 0.01% by weight.
また、本発明においてＡ ｌ−０−Ｔｉ−Ｃ結合、Ｓｉ
−Ｎ−Ｔｉ−Ｃ結合およびＡ １−Ｎ−Ｔｉ−Ｃ結合を
生成する方法は特定しないが、基体金属上にアルミナ、
窒化ケイ素または窒化アルミ等の単味あるいはそれらの
混合物をスプレー等通常の方法で被覆するか、好ましく
はプラズマ溶射により５０〜２００μｍ程度の厚さにコ
ーティングし、ペース金属を６００〜１０００℃の温度
で１０分間以上熱処理する。これは、６００℃未満であ
ると基体金属とアルミナ絶縁層、窒化ケイ素絶縁層また
は窒化アルミ絶縁層との十分な密着強度が得られにくく
、一方１０００℃を超えると急激なＡ Ｉ！−０−Ｔｉ
−Ｃ結合、Ｓ １−Ｎ−Ｔ ｉ−Ｃ結合またはＡｌ−Ｎ
−Ｔｉ−Ｃ結合の生成のために、絶縁層がもろくはく離
しやすくなるためである。In addition, in the present invention, Al-0-Ti-C bond, Si
-N-Ti-C bonds and A1-N-Ti-C bonds are not specified, but alumina,
A single substance such as silicon nitride or aluminum nitride or a mixture thereof is coated by a conventional method such as spraying, or preferably by plasma spraying to a thickness of about 50 to 200 μm, and the paste metal is coated at a temperature of 600 to 1000°C. Heat treat for 10 minutes or more. This is because if the temperature is less than 600°C, it is difficult to obtain sufficient adhesion strength between the base metal and the alumina insulating layer, silicon nitride insulating layer, or aluminum nitride insulating layer, whereas if it exceeds 1000°C, the A I! -0-Ti
-C bond, S 1-N-T i-C bond or Al-N
This is because the insulating layer becomes brittle and easily peels off due to the formation of -Ti-C bonds.
以下、本発明の各構成要件の好ましい態様について、さ
らに詳細に説明する。Preferred embodiments of each component of the present invention will be described in more detail below.
（１）ベース金属について
（ａ） ステンレス鋼の組成範囲（単位はすべて重量
％とする）
以下の第１表に示す必須成分および添加元素からなる組
成である必要がある。(1) Regarding the base metal (a) Composition range of stainless steel (all units are weight %) It is necessary to have a composition consisting of the essential components and additional elements shown in Table 1 below.
そのうち、好ましいステンレス鋼として、以下の第２表
に示す組成のものがあげられる。Among these, preferable stainless steels include those having the compositions shown in Table 2 below.
第
表
（ｂ）Ｎｉ基合金の組成範囲（単位はすべて重量％とす
る）
以下の第３表に示す主成分および添加元素からなる組成
であることが好ましい。Table (b) Composition range of Ni-based alloy (all units are weight %) Compositions consisting of the main components and additional elements shown in Table 3 below are preferred.
第３表
そのうち、好ましいＮｉ基合金として、４表に示す組成
の合金があげられる。Table 3 Among these, preferable Ni-based alloys include alloys having the compositions shown in Table 4.
以下の第
（Ｃ） 銅基合金の組成範囲（単位はすべて重量％と
する）
以下の第５表に示す必須成分および添加元素からなる組
成であることが好ましい。Composition Range of Copper-Based Alloy in Section (C) below (All units are weight %) It is preferable to have a composition consisting of the essential components and additional elements shown in Table 5 below.
第５表
そのうち、好ましい銅基合金として、以下の第６表に示
す組成の合金があげられる。Table 5 Among these, preferable copper-based alloys include alloys having the compositions shown in Table 6 below.
（２）Ａｊ！−［］−Ｔｉ−Ｃ，Ｓｉ−Ｎ−Ｔｉ−Ｃ，
Ａ１−Ｎ−Ｔｉ−Ｃ結合層について
前記の好ましい熱処理後、基体金属とアルミナ絶縁層、
窒化ケイ素絶縁層または窒化アルミ絶、縁層との界面に
、それぞれ０．５μｍ以下のＡｌ−〇−Ｔ ｉ−Ｃ結合
層、Ｓｉ−Ｎ−Ｔｉ−Ｃ結合層またはＡ １−Ｎ−Ｔｉ
−Ｃ結合層が存在する。これは、ベース金属中のＴ１原
子が加熱により表面層に拡散しＴｉＣを形成し、・ベー
ス金属中のＣとアルミナ絶縁層中のＯ原子または窒化ケ
イ素絶縁層および窒化アルミ絶縁層中のＮ原子をＴｉ原
子が介在することで結び付け、八β−０−Ｔ ｉ−Ｃ結
合層、Ｓ １−Ｎ−Ｔ ｉ−Ｃ結合層またはＡｌ−Ｎ−
Ｔｉ−Ｃ結合層を形成し強固な化学結合をするためであ
る。(2) Aj! -[]-Ti-C, Si-N-Ti-C,
After the preferred heat treatment described above for the A1-N-Ti-C bonding layer, the base metal and the alumina insulating layer;
At the interface with the silicon nitride insulating layer or the aluminum nitride insulating layer, an Al-〇-Ti-C bonding layer, a Si-N-Ti-C bonding layer, or an A1-N-Ti bonding layer of 0.5 μm or less is provided, respectively.
-C bonding layer is present. This is because T1 atoms in the base metal diffuse into the surface layer by heating to form TiC, and ・C in the base metal and O atoms in the alumina insulating layer or N atoms in the silicon nitride insulating layer and the aluminum nitride insulating layer. are bonded through the presence of Ti atoms, forming an 8β-0-T i-C bonding layer, a S 1-N-T i-C bonding layer, or an Al-N-
This is to form a Ti--C bonding layer to form a strong chemical bond.
（実施例） 以下、実際の例について説明する。(Example) An actual example will be explained below.
実施例
以下の順序で本発明の電気回路用基板を作製して評価し
た。EXAMPLE An electric circuit board of the present invention was produced and evaluated in the following order.
（１） ベース金属の作製
真空溶解炉を使用して、所定の組成に調合したステンレ
ス鋼、Ｎｉ基合金、銅基合金を溶解しインゴフトを作っ
た。得られた各組成のインゴットを熱間圧延加工後、冷
間圧延加工と焼鈍を繰り返すことにより、約５０ Ｘ５
０ Ｘ ２ ｍｍの板を作製して試験用ベース金属基材
とした。(1) Preparation of base metal A vacuum melting furnace was used to melt stainless steel, a Ni-based alloy, and a copper-based alloy prepared to a predetermined composition to produce an ingot. After hot rolling the resulting ingots of each composition, repeated cold rolling and annealing resulted in approximately 50 x 5 ingots.
A 0 x 2 mm plate was prepared and served as the base metal substrate for testing.
（２）セラミックコーティング
得られた試験用ベース金属基材の一表面に、プラズマ溶
射機を使用してＡｆ、０．、 Ｓｉ、Ｎ４． ＾ｎＮ
のセラミックコーティングを実施した。セラミックコー
ティング層の厚さは約１００μｍとした。(2) A ceramic coating was applied to one surface of the obtained test base metal substrate using a plasma spraying machine to give Af of 0. , Si, N4. ^nN
Ceramic coating was applied. The thickness of the ceramic coating layer was approximately 100 μm.
（３） コーテイング後の熱処理
セラミックコーティング終了後の試験用ベース金属基材
に対して、９００℃で１５分間の熱処理を実施して、ベ
ース金属基材と各セラミックコーティング層との界面に
−Ｔｉ−Ｃ結合を生成させ、金属基体の表面上にＡ Ｉ
！−０−Ｔｉ−Ｃ結合で密着したアルミナ絶縁層、Ｓｉ
−Ｎ−Ｔｉ−Ｃ結合で密着した窒化ケイ素絶縁層、Ａ
Ｉ！ −Ｎ−Ｔ ｉ−Ｃ結合で密着した窒化アルミ絶縁
層を有する電気回路用基板を得た。(3) Heat treatment after coating The test base metal substrate after ceramic coating was heat treated at 900°C for 15 minutes to form -Ti- at the interface between the base metal substrate and each ceramic coating layer. A C bond is generated and A I is formed on the surface of the metal substrate.
! -0-Ti-C bonded alumina insulating layer, Si
-Silicon nitride insulating layer adhered by N-Ti-C bonds, A
I! An electric circuit board having an aluminum nitride insulating layer adhered by -N-T i-C bonds was obtained.
（４）特性評価
特性を評価するため、得られた熱処理後の試験体に対し
て、５００℃の電気炉中に試験体を自動で出し入れする
装置を使用して加熱冷却による熱衝撃試験を実施した。(4) Characteristic evaluation In order to evaluate the characteristics, the obtained heat-treated test specimen was subjected to a thermal shock test by heating and cooling using a device that automatically takes the specimen into and out of an electric furnace at 500°C. did.
熱衝撃試験は大気中５００℃１５分間と室温１５分間と
の間を５００回くり返し、試験体の表面状態を肉眼にて
観察した。The thermal shock test was repeated 500 times at 500° C. for 15 minutes in the atmosphere and at room temperature for 15 minutes, and the surface condition of the test piece was observed with the naked eye.
結果を第７表〜第１５表に示す。The results are shown in Tables 7 to 15.
第７表
第８表
第
表
第
表
第
表
第
表
第
表
ベース金属としてステンレス鋼の結果を示す第７表〜第
９表、ニッケル基合金の結果を示す第１Ｏ表〜第１２表
および銅基合金の結果を示す第１３表〜第１５表に示す
とおり、本発明のＴ１およびＣの組成範囲を満たす例で
は熱衝撃試験によりまったく異常がなかったのに対し、
ＴｉまたはＣの組成範囲が本発明の組成範囲を満たさな
い例では各絶縁層の一部はく離が生じることがわかる。Table 7 Table 8 Table 8 Table Table 8 Tables 7 to 9 showing the results for stainless steel as the base metal, Tables 10 to 12 showing the results for nickel-based alloys and copper base As shown in Tables 13 to 15 showing the results of the alloys, in the examples satisfying the composition range of T1 and C of the present invention, there was no abnormality at all in the thermal shock test.
It can be seen that in examples where the composition range of Ti or C does not satisfy the composition range of the present invention, part of each insulating layer peels off.
また、本発明の組成範囲を満たすステンレス鋼、ニッケ
ル葺合゛金および銅基合金にそれぞれアルミナ絶縁層、
窒化ケイ素絶縁層および窒化アルミ絶縁層を形成した試
験体に対して、熱処理温度の影響を調べるため、種々の
温度で熱処理したものについて同様に熱衝撃試験を実施
した。結果を第１６表〜第１８表に示す。In addition, an alumina insulating layer is added to stainless steel, nickel-plated alloy, and copper-based alloy that meet the composition range of the present invention.
In order to investigate the influence of heat treatment temperature on test specimens on which a silicon nitride insulating layer and an aluminum nitride insulating layer were formed, thermal shock tests were similarly conducted on specimens heat treated at various temperatures. The results are shown in Tables 16 to 18.
第
表
第１６表〜第１８表の結果から、ベース金属を６００〜
１０００℃の温度で１０分間以上熱処理すると好ましい
ことがわかる。なお、上述した例では、ベース金属と絶
縁層の組合わせの一例を示したのみであるが、他の組合
せについても同様の結果を得ることができた。From the results in Tables 16 to 18, the base metal is
It can be seen that heat treatment at a temperature of 1000° C. for 10 minutes or more is preferable. In addition, in the example mentioned above, only one example of the combination of the base metal and the insulating layer was shown, but similar results could be obtained with other combinations.
さらに、セラミックコーティング層の厚さの影響を調べ
るため、上述した方法によりベース金属として本発明範
囲内の組成を有するステンレス鋼を使用し、アルミナ絶
縁層、窒化ケイ素絶縁層および窒化アルミ絶縁層の厚さ
を変えて試験体を作製し、耐電圧を測定した。結果を第
１図に示す。Furthermore, in order to investigate the effect of the thickness of the ceramic coating layer, stainless steel having a composition within the range of the present invention was used as the base metal by the method described above, and the thicknesses of the alumina insulating layer, silicon nitride insulating layer, and aluminum nitride insulating layer were Test specimens were prepared with different sizes, and the withstand voltage was measured. The results are shown in Figure 1.
第１図の結果から、セラミック層の厚さは５０μｍ未満
ではいずれも５００ｖ以下の耐電圧になり使用に耐えな
くなるため、５０μｍ以上が好ましい。From the results shown in FIG. 1, if the thickness of the ceramic layer is less than 50 μm, the withstand voltage will be less than 500 V and the ceramic layer will not be usable, so it is preferable to have a thickness of 50 μm or more.
（発明の効果）
以上の説明から明らかなように、本発明の電気回路用基
板およびその製造方法によれば、各基体金属と各絶縁層
間に化学的で強固なＡ Ｒ−０−Ｔｉ−Ｃ結合、Ｓｉ−
Ｎ−Ｔｉ−Ｃ結合またはＡ １−Ｎ−Ｔｉ−Ｃ結合層を
有しているため、各ベース金属と各絶縁層間の強固な密
着を達成できる。(Effects of the Invention) As is clear from the above description, according to the electric circuit board and the manufacturing method thereof of the present invention, chemically strong A R-0-Ti-C is formed between each base metal and each insulating layer. bond, Si-
Since it has an N-Ti-C bond layer or an A1-N-Ti-C bond layer, strong adhesion between each base metal and each insulating layer can be achieved.
第１図は本発明の電気回路基板におけるセラミック層の
厚さと耐電圧との関係を示すグラフ、第２図は従来の溶
射基板の一例の構成を示す断面図である。
第１図
特許出願人 日本碍子株式会社
でラミ・ノブ漫Ｊこ （）ｔｍ）
第２図
手続補正書
平成元年１１月３０日
特許庁長官 吉 １） 文 毅 殿１、事件
の表示
昭和６３年特許願第２９８０３７号
２、発明の名称
電気回路用基板およびその製造方法
３、補正をする者
事件との関係 特許出願人
（４０６）日本碍子株式会社
１、明細書第３０頁第１〜２行のｒベース金属を６００
〜１０００°Ｃの温度で」を「ベース金属がステンレス
鋼およびニッケル基合金では６００〜１０００℃、銅基
合金では５００〜９００°Ｃの温度で」と訂正する。
４、代理人FIG. 1 is a graph showing the relationship between the thickness of the ceramic layer and the withstand voltage in the electric circuit board of the present invention, and FIG. 2 is a sectional view showing the structure of an example of a conventional thermal sprayed board. Figure 1 Patent Applicant: Nippon Insulators Co., Ltd. Rami Nobuman J () tm) Figure 2 Procedural Amendments November 30, 1989 Director General of the Patent Office Yoshi 1) Moon Yi 1, Display of the Case 1986 Patent Application No. 298037 2, Name of the invention: Electric circuit board and its manufacturing method 3, Relationship with the amended case Patent applicant (406) Nippon Insulators Co., Ltd. 1, Specification page 30, Nos. 1-2 row r base metal 600
"at a temperature of ~1000°C" is corrected to "at a temperature of 600-1000°C for base metals of stainless steel and nickel-based alloys, and 500-900°C for copper-based alloys." 4. Agent
Claims (2)
．０１〜０．５重量％を含有するステンレス鋼またはニ
ッケル基合金、もしくは少なくともＴｉ０．２〜５．０
重量％およびＣ０．０００１〜０．０１重量％を含有す
る銅基合金からなるいずれかの基体の表面に、Ａｌ−Ｏ
−Ｔｉ−Ｃ結合で密着したアルミナ絶縁層、Ｓｉ−Ｎ−
Ｔｉ−Ｃ結合で密着した窒化ケイ素絶縁層またはＡｌ−
Ｎ−Ｔｉ−Ｃ結合で密着した窒化アルミ絶縁層を有する
ことを特徴とする電気回路用基板。1. At least 0.2-0.8% by weight of Ti and C0
．． Stainless steel or nickel-based alloy containing 0.01 to 0.5 wt%, or at least 0.2 to 5.0 Ti
Al-O
-Alumina insulating layer adhered by Ti-C bond, Si-N-
Silicon nitride insulating layer or Al-
An electric circuit board characterized by having an aluminum nitride insulating layer closely adhered by N-Ti-C bonds.
０１〜０．５重量％を含有するステンレス鋼またはニッ
ケル基合金、もしくは少なくともＴｉ０．２〜５．０重
量％およびＣ０．０００１〜０．０１重量％を含有する
銅基合金のうちのいずれかの基体の表面に、アルミナ、
窒化ケイ素または窒化アルミを被覆し、６００〜１００
０℃の温度で１０分間以上熱処理して、基体の表面にＡ
ｌ−Ｏ−Ｔｉ−Ｃ結合、Ｓｉ−Ｎ−Ｔｉ−Ｃ結合、また
はＡｌ−Ｎ−Ｔｉ−Ｃ結合によってアルミナ絶縁層、窒
化ケイ素絶縁層または窒化アルミ絶縁層を形成すること
を特徴とする電気回路用基板の製造方法。2. At least 0.2-0.8% by weight of Ti and C0.
of stainless steel or nickel-based alloys containing at least 0.2-5.0 wt.% Ti and 0.0001-0.01 wt.% C. Alumina on the surface of the base,
Coated with silicon nitride or aluminum nitride, 600-100
Heat treatment is performed at a temperature of 0°C for 10 minutes or more to coat the surface of the substrate with A.
An electrical device characterized in that an alumina insulating layer, a silicon nitride insulating layer, or an aluminum nitride insulating layer is formed by l-O-Ti-C bond, Si-N-Ti-C bond, or Al-N-Ti-C bond. A method for manufacturing circuit boards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29803788A JPH02145333A (en) | 1988-11-28 | 1988-11-28 | Board for electric circuit and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29803788A JPH02145333A (en) | 1988-11-28 | 1988-11-28 | Board for electric circuit and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02145333A true JPH02145333A (en) | 1990-06-04 |
Family
ID=17854306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29803788A Pending JPH02145333A (en) | 1988-11-28 | 1988-11-28 | Board for electric circuit and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02145333A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008047869A1 (en) * | 2006-10-20 | 2008-04-24 | Sumitomo Metal Industries, Ltd. | Nickel material for chemical plant |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63274673A (en) * | 1987-04-30 | 1988-11-11 | Nec Corp | Ceramics substrate having high heat conductivity |
-
1988
- 1988-11-28 JP JP29803788A patent/JPH02145333A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63274673A (en) * | 1987-04-30 | 1988-11-11 | Nec Corp | Ceramics substrate having high heat conductivity |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008047869A1 (en) * | 2006-10-20 | 2008-04-24 | Sumitomo Metal Industries, Ltd. | Nickel material for chemical plant |
| JP5035250B2 (en) * | 2006-10-20 | 2012-09-26 | 住友金属工業株式会社 | Nickel materials for chemical plants |
| US8986470B2 (en) | 2006-10-20 | 2015-03-24 | Nippon Steel & Sumitomo Metal Corporation | Nickel material for chemical plant |
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