JPH02149954A - Recording/playback device and method - Google Patents

Recording/playback device and method

Info

Publication number
JPH02149954A
JPH02149954A JP30222388A JP30222388A JPH02149954A JP H02149954 A JPH02149954 A JP H02149954A JP 30222388 A JP30222388 A JP 30222388A JP 30222388 A JP30222388 A JP 30222388A JP H02149954 A JPH02149954 A JP H02149954A
Authority
JP
Japan
Prior art keywords
recording
probe electrode
recording medium
voltage
probe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30222388A
Other languages
Japanese (ja)
Inventor
Harunori Kawada
河田 春紀
Kiyoshi Takimoto
瀧本 清
Hiroshi Matsuda
宏 松田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP30222388A priority Critical patent/JPH02149954A/en
Priority to CA002000071A priority patent/CA2000071C/en
Priority to EP89310092A priority patent/EP0363147B1/en
Priority to DE68926602T priority patent/DE68926602T2/en
Priority to AT89310092T priority patent/ATE139051T1/en
Publication of JPH02149954A publication Critical patent/JPH02149954A/en
Priority to US08/019,344 priority patent/US5439777A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/08—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by electric charge or by variation of electric resistance or capacitance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B13/00—Recording simultaneously or selectively by methods covered by different main groups among G11B3/00, G11B5/00, G11B7/00 and G11B9/00; Record carriers therefor not otherwise provided for; Reproducing therefrom not otherwise provided for
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B13/00—Recording simultaneously or selectively by methods covered by different main groups among G11B3/00, G11B5/00, G11B7/00 and G11B9/00; Record carriers therefor not otherwise provided for; Reproducing therefrom not otherwise provided for
    • G11B13/06—Recording simultaneously or selectively by methods covered by different main groups among G11B3/00, G11B5/00, G11B7/00 and G11B9/00; Record carriers therefor not otherwise provided for; Reproducing therefrom not otherwise provided for optically and by styli
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は情報の記録再生装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an information recording/reproducing device.

(従来の技術) 近年、メモリ材料の用途は、コンピュータおよびその間
連機器、ビデオディスク、ディジタルオーディオディス
ク等のエレクトロニクス産業の中核をなすものであり、
その材料開発も極めて活発に進んでいる。メモリ材料に
要求される性能は用途により異なるが、−数的には、 ■高密度で記録容量が大きい、 ■記録再生の応答速度が速い、 ■消費電力が少ない、 ■生産性が高く、価格が安い、 等が挙げられる。
(Prior Art) In recent years, the use of memory materials has become the core of the electronics industry, such as computers and related equipment, video disks, digital audio disks, etc.
The development of these materials is also progressing very actively. The performance required of memory materials varies depending on the application, but in terms of numbers, they are: ■High density and large storage capacity; ■Fast response speed for recording and playback; ■Low power consumption; ■High productivity and price. is cheap, etc.

従来までは磁性体や半導体を素材とした半導体メモリや
磁気メモリが主であったが、近年レーザー技術の進展に
ともない、有機色素、フォトポリマーなとの有機薄膜を
用いた光メモリによる安価で高密度な記録媒体が登場し
てきた。
Until now, semiconductor memory and magnetic memory were mainly made of magnetic materials and semiconductors, but with the recent advances in laser technology, inexpensive and high-density optical memory using organic thin films such as organic dyes and photopolymers has been developed. recording media have appeared.

一方、最近、導体の表面原子の電子構造を直接観察でき
る走査型トンネル顕微鏡(以後、STMと略す)が開発
され、 [G、Binning et al、、tlelvet
ica Physica Acta。
On the other hand, recently, a scanning tunneling microscope (hereinafter abbreviated as STM) that can directly observe the electronic structure of surface atoms of a conductor has been developed.
ica Physica Acta.

55、726(1982) ] 単結晶、非晶質を問わず実空間像の高い分解能が測定が
できるようになり、しかも媒体に電流による損傷を与え
ずに低電力で観測できる利点をも有し、さらに大気中で
も動作し、種々の材料に対して用いることができるため
広範囲な応用が期待されている。
55, 726 (1982)] It has become possible to measure real space images with high resolution regardless of whether they are single crystal or amorphous, and it also has the advantage of being able to observe with low power without damaging the medium due to current. Furthermore, it is expected to have a wide range of applications because it can operate in the atmosphere and can be used with various materials.

STMは金属の探針と導電性物質の間に電圧を加えてl
nm程度の距離まで近づけるとトンネル電流が流れるこ
とを利用している。この電流は両者の距離変化に非常に
敏感であり、トンネル電流を一定に保つように探針を走
査することにより実空間の表面構造を描くことができる
と同時に表面原子の全電子雲に関する種々の情報をも読
み取ることができる。STMを用いた解析は導電性試料
に限られるが、導電性材料の表面に非常に薄く形成され
た単分子膜の構造解析にも応用され始めており、個々の
有機分子の状態の違いを利用した高密度記録の再生技術
としての応用も考えられる。
STM involves applying a voltage between a metal tip and a conductive material.
It takes advantage of the fact that a tunnel current flows when brought close to a distance of about nm. This current is very sensitive to changes in the distance between the two, and by scanning the probe while keeping the tunneling current constant, it is possible to draw the surface structure in real space and at the same time draw various information about the total electron cloud of surface atoms. Information can also be read. Analysis using STM is limited to conductive samples, but it is beginning to be applied to the structural analysis of extremely thin monomolecular films formed on the surface of conductive materials, using the differences in the states of individual organic molecules. Application as a reproduction technology for high-density recording is also considered.

その例としてSTMを用いたデバイスでは有機整流素子
(米国特許3953874)有機記憶素子(米国特許3
833894)がある。これら一連の研究によって素子
特性が検討されているが特性はまた実用上充分でない。
For example, devices using STM include an organic rectifying element (US Pat. No. 3,953,874) and an organic memory element (US Pat. No. 3,953,874).
833894). Although device characteristics have been investigated through these series of studies, the characteristics are still insufficient for practical use.

また、一方1個の有機分子に論理素子やメモリ素子等の
機能を持たせた分子電子デバイスの提案が発表され、分
子電子デバイスの構築技術の一つとみられるラングミュ
アーブロジェット膜(以下LB膜と略す)についての研
究も活発化している。LB膜は有機分子を規則正しく1
分子層ずつ積層したもので膜厚の制御が分子長の単位で
行うことができ、−様で均質なM?#膜を形成できる。
Meanwhile, a proposal for a molecular electronic device in which a single organic molecule has functions such as a logic element or a memory element was announced, and a Langmuir-Blodgett film (hereinafter referred to as LB film), which is considered to be one of the construction technologies for molecular electronic devices, was announced. Research on (abbreviated) is also becoming more active. The LB film arranges organic molecules in an orderly manner.
The film thickness can be controlled in units of molecular length by laminating one molecular layer at a time, and the M? #Can form a film.

この特徴を十分に活かしたデバイス作成としてLB膜を
絶縁膜として使う多くの試みが行なわれてきている。例
えば金属・絶縁体・金属(MIM)構造のトンネル接合
素子[G、L、Larkinset al、、 Th1
n 5olid Filns、 99. (1983)
]や金属・絶縁体・半導体(MIS)構造に発光素子[
G、G、Roberts  et  al、、  El
ectronics  Letters。
Many attempts have been made to use the LB film as an insulating film to create devices that take full advantage of this feature. For example, tunnel junction devices with metal-insulator-metal (MIM) structures [G, L, Larkins et al., Th1
n 5 solid filns, 99. (1983)
] and metal-insulator-semiconductor (MIS) structures with light-emitting elements [
G.G., Roberts et al., El.
electronics Letters.

20、489(1984) ]あるいはスイッチング素
子[N。
20, 489 (1984)] or switching elements [N.

J、Thoa+as at al、、 Electro
nics Letters、 20゜838 (198
4) ]さらにSTMとの組合せによる高密度記録に関
する特開昭63〜161552 、特開昭63−161
553がある。これら一連の研究によって素子特性が検
討されているが未だ素子ごとの特性のバラツキ、経時変
化など再現性と安定性、あるいは実用特性はまだ充分で
なく未解決の問題として残った。
J,Thoa+as at al,, Electro
nics Letters, 20°838 (198
4) Furthermore, JP-A-63-161552 and JP-A-63-161 regarding high-density recording in combination with STM
There are 553. Although device characteristics have been investigated through a series of these studies, variations in characteristics between devices, reproducibility and stability such as changes over time, and practical characteristics are still insufficient and remain unresolved problems.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

本発明の目的は電圧・電流のスイッチング特性に対して
メモリ性を有する特性の優れた高密度記録媒体を用いた
記録再生装置及び記録再生法を提供することにある。
An object of the present invention is to provide a recording/reproducing apparatus and a recording/reproducing method using a high-density recording medium having excellent voltage/current switching characteristics and memory properties.

〔課題を解決するための手段〕 本発明は光源、プローブ電極、電荷移動錯体の単分子膜
からなる記録媒体を有する記録再生装置である。
[Means for Solving the Problems] The present invention is a recording/reproducing device having a light source, a probe electrode, and a recording medium comprising a monomolecular film of a charge transfer complex.

この記録再生装置の記録媒体が前記プローブ電極と該プ
ローブ電極に対向して配置された対向電極との間に配置
されていること、また記録媒体がラングミュアーブロジ
ェット法により形成されていることも本発明に含まれる
。
The recording medium of this recording/reproducing device is disposed between the probe electrode and a counter electrode disposed opposite to the probe electrode, and the recording medium is formed by the Langmuir-Blodgett method. Included in the present invention.

面記電荷移動錯体が金属、金属イオン及び有機電子受容
体よりなること、前記プローブ電極のXY走査駆動装置
を有していること、首記プローブ電極と記録媒体の相対
位置を3次元的に微動制御する手段を有していることも
本発明に含まれる。
The planar charge transfer complex is composed of a metal, a metal ion, and an organic electron acceptor, the probe electrode has an XY scanning drive device, and the relative position of the probe electrode and the recording medium is finely moved in three dimensions. The present invention also includes means for controlling.

さらに本発明は、記録媒体に光源より光照射を行いなが
ら、情報に応じて該記録媒体にメモリ効果を生じるしき
い値電圧を超えた電圧をプローブ電極によって印加する
ことにより情報の記録を行う方法、プローブ電極に電圧
を印加し、かつ記録媒体とプローブ電極との間隔を一定
に保ちながらプローブ電極を記録媒体に沿って走査し、
プローブ電極に流れる電流値の変化を検知することによ
り情報を再生する方法、および記録媒体に記録された情
報を掘勤エネルギーを与えることにより消去する方法も
含む。
Furthermore, the present invention provides a method for recording information by applying a voltage exceeding a threshold voltage that causes a memory effect to the recording medium according to the information using a probe electrode while irradiating the recording medium with light from a light source. , applying a voltage to the probe electrode and scanning the probe electrode along the recording medium while keeping the distance between the recording medium and the probe electrode constant;
It also includes a method of reproducing information by detecting a change in the value of current flowing through a probe electrode, and a method of erasing information recorded on a recording medium by applying excavation energy.

本発明は光源、プローブ電極、電気メモリー効果をもつ
記録媒体及び首記プローブ電極から記録媒体に電圧を印
加する書込み読取り電圧印加手段及び消去手段とを有す
る記録再生装置並びに電気メモリー効果をもつ記録媒体
に光照射を行いながらプローブ電極から電気メモリー効
果を生じる閾値電圧を越えた電圧を印加する記録法に特
徴を有している。
The present invention relates to a recording/reproducing apparatus having a light source, a probe electrode, a recording medium having an electric memory effect, a write/read voltage applying means for applying a voltage to the recording medium from the probe electrode, and an erasing means, and a recording medium having an electric memory effect. The recording method is characterized by applying a voltage exceeding a threshold voltage that causes an electrical memory effect from the probe electrode while irradiating the area with light.

読み取り法においてはSTMを用いプローブ、電極間の
距離を一定に保ちながらプローブに電圧を印加し、流れ
る電流量の変化を測定し行うことを特徴とする。
The reading method is characterized by using STM, applying voltage to the probe while keeping the distance between the probe and electrode constant, and measuring changes in the amount of current flowing.

更に消去法においては光照射等を行うことにより記録媒
体に振動エネルギーを与え簡便に記録された情報を消去
することができる。
Furthermore, in the erasure method, recorded information can be easily erased by applying vibrational energy to the recording medium by irradiating it with light or the like.

また記録媒体に用いる材料は金属と有機電子受容体との
電荷移動錯体を含む両親媒性のLB膜に通した材料であ
わばよく、例えばn−オクタデシルテトラシアノキノジ
メタン銅錯体(ODTCNQ/Cu)、n−ドデシルテ
トラシアノキノジメタン銅錯体(DDTCNQ/Cu)
、n−オクタデシルテトラシアノキノジメタン銀錯体(
ODTCNQ/Ag)、n−ドデシルテトラシアノキノ
ジメタン銀錯体(DDTCNQ/Ag)及びその置換体
などが挙げられる。
The material used for the recording medium may be any material passed through an amphiphilic LB film containing a charge transfer complex of a metal and an organic electron acceptor, such as n-octadecyltetracyanoquinodimethane copper complex (ODTCNQ/Cu ), n-dodecyltetracyanoquinodimethane copper complex (DDTCNQ/Cu)
, n-octadecyltetracyanoquinodimethane silver complex (
ODTCNQ/Ag), n-dodecyltetracyanoquinodimethane silver complex (DDTCNQ/Ag), and substituted products thereof.

電極材料は導電性、平滑性の優れた膜を形成するもので
あれば良く、例えばAu/Pd、Pt、n″″−3iな
どが挙げられる。
The electrode material may be any material as long as it forms a film with excellent conductivity and smoothness, and examples thereof include Au/Pd, Pt, n''''-3i, and the like.

光源は可視光から赤外光の間の波長の光を放出するもの
であれば良く、例えば、キセノンランプ、ヘリウム−ネ
オンレーザ−、アルゴンレーザー、半導体レーザー、炭
酸ガスレーザー等各種の光源を任意に用いることができ
る。また光強度の違いにより記録できる印加電圧を変化
させることも可能である。
The light source may be anything that emits light with a wavelength between visible light and infrared light; for example, various light sources such as xenon lamps, helium-neon lasers, argon lasers, semiconductor lasers, and carbon dioxide lasers may be used. Can be used. It is also possible to change the applied voltage that allows recording by varying the light intensity.

第1図は本発明の記録装置を示すブロック構成図である
。第1図中、5はプローブ電流増巾器で、6はプローブ
電流が一定になるように圧電素子を用いた微動機構7を
制御するサーボ回路である。8はプローブ電極2と電極
3の間に記録/消去用のパルス電圧を印加するための電
源である。
FIG. 1 is a block diagram showing a recording apparatus of the present invention. In FIG. 1, 5 is a probe current amplifier, and 6 is a servo circuit that controls a fine movement mechanism 7 using a piezoelectric element so that the probe current is constant. Reference numeral 8 denotes a power source for applying a pulse voltage for recording/erasing between the probe electrode 2 and the electrode 3.

パルス電圧を印加するときプローブ電流が急激に変化す
るためサーボ回路6は、その間出力電圧が一定になるよ
うに、HOLD回路をONにするように制御している。
Since the probe current changes rapidly when the pulse voltage is applied, the servo circuit 6 controls the HOLD circuit to be turned on so that the output voltage remains constant during that time.

9はXY力方向プローブ電極2を移動制御するためのX
Y走査駆動回路である。10と1■は、あらかしめ10
−’A程度のプローブ電流が得られるようにプローブ電
極2と記録媒体1との距離を粗動制御するものである。
9 is an X for controlling the movement of the XY force direction probe electrode 2.
This is a Y scan drive circuit. 10 and 1■ are 10
The distance between the probe electrode 2 and the recording medium 1 is coarsely controlled so that a probe current of about -'A is obtained.

これらの各機能は、すべてマイクロコンピュータ12に
より中央制御されている。また13は表示機器を表して
いる。
All of these functions are centrally controlled by the microcomputer 12. Further, 13 represents a display device.

また、圧電素子を用いた移動制御における機械的性能例
を下記に示す。
Furthermore, examples of mechanical performance in movement control using piezoelectric elements are shown below.

Z方向微動制御範囲:  0.1nm y  lnmZ
方向粗動制御範囲:   lOnm 〜IOma+XY
方向走査範囲 :  0.1nm 〜Inm計測、制御
許容誤差:<0.1nm 以下、本発明を実施例に従って説明する。
Z direction fine movement control range: 0.1nm y lnmZ
Directional coarse movement control range: lOnm ~IOma+XY
Directional scanning range: 0.1 nm to Inm Measurement, control tolerance: <0.1 nm The present invention will be described below with reference to Examples.

実施例1 第1図に示す記録再生装置を用いた。プローブ電極2と
して白金/ロジウム製のプローブ電極を用いた。このプ
ローブ電極2は記録層+01の表面との距m <z>を
制御するためのもので電流を一定に保つように圧電素子
により、その距II!(Z)が微動制御されている。更
に微動制御機構7は距離Zを一定に保ったまま、面内(
X、Y)方向にも微動制御できるように設計されている
。しかし、これらはすべて従来公知の技術である。また
プローブ電極2は直接記録・再生・消去を行うことがで
きる。また、記録媒体は高精度のXYステージ14の上
に置かれ、任意の位置に移動させることができる。
Example 1 A recording/reproducing apparatus shown in FIG. 1 was used. As the probe electrode 2, a platinum/rhodium probe electrode was used. This probe electrode 2 is used to control the distance m<z> from the surface of the recording layer +01, and is controlled by a piezoelectric element to keep the current constant. (Z) is controlled by fine movement. Furthermore, the fine movement control mechanism 7 maintains the distance Z constant and moves the in-plane (
It is designed to allow fine movement control in the X, Y) directions as well. However, these are all conventionally known techniques. Further, the probe electrode 2 can directly perform recording, reproduction, and erasing. Further, the recording medium is placed on a high-precision XY stage 14 and can be moved to any position.

次にオクタデシルテトラシアノキノジメタン/銅錯体(
OD T CN Q / Cu )の成膜方法について
記す。アセトニトリル(ACN)を溶媒に用いOD T
 CN Q / Cuの4 * 10−’Mの濃度の溶
液を調整した。この溶液を純水20℃の水相に展開し、
表面圧を20mN/IBまで高め、水面上に単分子膜を
形成した。表面圧を一定に保ちながらあらかじめ水相中
に浸漬しておいた金/パラジウム(Au/Pd)を30
0人の厚さで蒸着したガラス基板を水面に横切る方向に
静かに5 mm/winの速さで引き」二げ、OD T
 CN Q / Cu単分子膜をA u / P d蒸
着ガラス基板上に成膜した。これを記録媒体1とした。
Next, octadecyltetracyanoquinodimethane/copper complex (
The method for forming a film of ODTCNQ/Cu) will be described. ODT using acetonitrile (ACN) as a solvent
A solution of CNQ/Cu with a concentration of 4*10-'M was prepared. This solution was developed in an aqueous phase of pure water at 20°C,
The surface pressure was increased to 20 mN/IB to form a monomolecular film on the water surface. Gold/palladium (Au/Pd), which had been immersed in the water phase in advance while keeping the surface pressure constant, was
A glass substrate deposited with a thickness of 0.0 mm was gently pulled across the water surface at a speed of 5 mm/win.
A CNQ/Cu monolayer was deposited on an Au/Pd evaporated glass substrate. This was designated as recording medium 1.

次にOD T CN Q / Cu −L B膜を1層
累積した記録媒体1を用いた、記録・再生・消去の実験
について記す。記録媒体1をxYステージ14の上に置
きまず目視によりプローブ電極2の位置をきめ固定した
。A u / P d電極3とプローブの間に3■の電
圧を印加し、電流をモニターしながらプローブ電極2と
記録層101表面との距離Zを調整した。プローブ電J
Ji2に+300mVの電圧をがけたとこる測定された
電流値は1pA以下であった。電圧印加をやめ、キセノ
ンランプを用いて記録媒体重を照射し、再度プローブ電
極2に+5vの電圧をかけ、記録を行ったところ電気が
良好に流れるON状態に遷移した。光照射、電圧印加を
やめて再度同じ位置でプローブ電i2に÷3000]V
の電圧を印加し、記録再生を行ったところ5nAの電流
が流れON状態が保存され、記録が保存されているのが
分かった。電圧印加をやめアルゴンレーザーを用いて記
録部位を照射し、振動エネルギーを与えた。再度同じ位
置でプローブ電8i2に+300[11Vの電圧を印加
し、記録再生したところ電流値1p^以下のOFF状憇
に遷移し、記録が消去されたことが確認された。
Next, a recording/reproducing/erasing experiment using a recording medium 1 having one layer of ODTCNQ/Cu-LB film will be described. The recording medium 1 was placed on the xY stage 14, and the position of the probe electrode 2 was determined and fixed visually. A voltage of 3 cm was applied between the A u / P d electrode 3 and the probe, and the distance Z between the probe electrode 2 and the surface of the recording layer 101 was adjusted while monitoring the current. Probe electric J
When a voltage of +300 mV was applied to Ji2, the measured current value was less than 1 pA. When the voltage application was stopped, the recording medium was irradiated with a xenon lamp, and a voltage of +5 V was applied to the probe electrode 2 again, recording was performed, and the probe transitioned to an ON state in which electricity flows well. After stopping light irradiation and voltage application, set the probe voltage i2 to ÷3000]V again at the same position.
When a voltage of 5 nA was applied and recording/reproduction was performed, a current of 5 nA flowed and the ON state was preserved, indicating that the recording was preserved. The voltage application was stopped and the recording site was irradiated with an argon laser to give vibrational energy. When a voltage of +300[11 V was applied to the probe voltage 8i2 again at the same position and recording/reproduction was performed, a transition occurred to an OFF state with a current value of 1 p^ or less, and it was confirmed that the recording had been erased.

実施例2 実施例1と同様に第1図に示す記録再生装置を用いた。Example 2 As in Example 1, the recording and reproducing apparatus shown in FIG. 1 was used.

ドデシルテトラシアノキノジメタン/銅錯体(D D 
T CN Q / Cu )の成膜方法について記す。
Dodecyltetracyanoquinodimethane/copper complex (DD
The method for forming a film of TCNQ/Cu) will be described.

アセトニトリル(ACN)を溶媒に用いD D T C
N Q / Cuの4 * 10””Mの濃度の溶液を
調整した。この溶液を純水20℃の水相に展開し、表面
圧を20111N/[11まで高め、水面上に単分子膜
を形成した。表面圧を一定に保ちながらあらかじめ水相
中に浸漬しておいた金/パラジウム(Au/Pd)を3
00人の厚さで蒸着したガラス基板を水面に横切る方向
に静かに5 mm/minの速さで引き上げ、D D 
T CN Q / Cu単分子膜をA u / P d
蒸着ガラス基板上に成膜した。これを記録媒体1とした
。
D D T C using acetonitrile (ACN) as a solvent
A solution of NQ/Cu with a concentration of 4*10''M was prepared. This solution was developed in an aqueous phase of pure water at 20° C., the surface pressure was increased to 20111 N/[11], and a monomolecular film was formed on the water surface. Gold/palladium (Au/Pd), which had been immersed in the water phase in advance while keeping the surface pressure constant, was
Gently lift the glass substrate deposited to a thickness of 0.00 mm across the water surface at a speed of 5 mm/min.
T CN Q / Cu monolayer A u / P d
A film was formed on a vapor-deposited glass substrate. This was designated as recording medium 1.

次にDDTCNQ/Cu−LB膜を1層累積した記録媒
体1を用いた、記録・再生・消去の実験について記す。
Next, a recording/reproducing/erasing experiment using a recording medium 1 in which one layer of DDTCNQ/Cu-LB films was accumulated will be described.

記録媒体1をXYステージ14の上に置きまず目視によ
りプローブ電極2の位置をきめ固定した。A u / 
P d電極3とプローブの間に3vの電圧を印加し、電
流をモニターしながらプローブ電極2と記録層101表
面との距gzを調整した。プローブ電極2に+300m
Vの電圧をかけたところ測定された電流値は1pA以下
であった。電圧印加をやめ、キセノンランプを用いて記
録媒体1を照射し、再度プローブ電極2に+5vの電圧
をかけ、記録を行ったところ電気が良好に流れるON状
態に遷移した。光照射、電圧印加をやめて再度同じ位置
でプローブ電8i2に+300mVの電圧を印加し、記
録再生を行ったところ5nAの電流が流れON状態が保
存され、記録が保存されているのが分かった。電圧印加
をやめアルゴンレーザーを用いて記録部位を照射し、振
動エネルギーを与えた。再度同じ位置でプローブ電極2
に+300mVの電圧を印加し、再生したところ電流値
1pA以下のOFF状態に遷移し、記録が消去されたこ
とが確認された。
The recording medium 1 was placed on the XY stage 14, and the position of the probe electrode 2 was determined and fixed visually. A u /
A voltage of 3 V was applied between the Pd electrode 3 and the probe, and the distance gz between the probe electrode 2 and the surface of the recording layer 101 was adjusted while monitoring the current. +300m to probe electrode 2
When a voltage of V was applied, the measured current value was 1 pA or less. When the voltage application was stopped, the recording medium 1 was irradiated with a xenon lamp, and a voltage of +5 V was applied to the probe electrode 2 again to perform recording, the probe electrode 2 transitioned to an ON state in which electricity flows well. When light irradiation and voltage application were stopped, a voltage of +300 mV was again applied to the probe electrode 8i2 at the same position, and recording and reproduction was performed, a current of 5 nA flowed and the ON state was preserved, indicating that the recording was preserved. The voltage application was stopped and the recording site was irradiated with an argon laser to give vibrational energy. Probe electrode 2 again at the same position
When a voltage of +300 mV was applied to and played back, it was confirmed that the current value was 1 pA or less and the data shifted to the OFF state, and that the recording had been erased.

実施例3 実施例1と同様に第1図に示す記録再生装置を用いた。Example 3 As in Example 1, the recording and reproducing apparatus shown in FIG. 1 was used.

オクタデ°シルテトラシアノキノジメタン/銀錯体(O
D T CN Q/A g )の成1摸方法について記
す。アセトニトリル(ACN)を溶媒に用い0DTcN
Q/Agの4*l0−6M のKJ、度の溶液を調整し
た。この溶液を純水20℃の水相に展開し、表面圧を1
5+nN/mまで高め、水面上に単分子膜を形成した。
Octade°siltetracyanoquinodimethane/silver complex (O
DTCNQ/Ag)'s production method is described below. 0DTcN using acetonitrile (ACN) as a solvent
A 4*10-6M solution of Q/Ag was prepared. This solution was developed in an aqueous phase of pure water at 20°C, and the surface pressure was adjusted to 1
The pressure was increased to 5+nN/m to form a monomolecular film on the water surface.

表面圧を一定に保ちながらあらかじめ水相中に浸漬して
おいた金/パラジウム(Au/Pd)を300人の厚さ
で蒸着したガラス基板を水面に横切る方向に静かに5 
mm/minの速さで引き一ヒげ、OD T CN Q
 / A g単分子11%をA u / P d蒸着ガ
ラス基板上に成膜した。これを記録媒体lとした。
While keeping the surface pressure constant, a glass substrate on which gold/palladium (Au/Pd), which had been previously immersed in the water phase, had been vapor-deposited to a thickness of 300 mm, was gently moved across the water surface for 5 minutes.
Pull at a speed of mm/min, OD T CN Q
A single molecule of 11% of A/Ag was deposited on an Au/Pd vapor-deposited glass substrate. This was designated as recording medium 1.

次に0DTCNQ/Ag−LB膜を1層累積した記録媒
体1を用いた、記録・再生・消去の実験について記す。
Next, a recording/reproducing/erasing experiment using recording medium 1 in which one layer of 0DTCNQ/Ag-LB film was accumulated will be described.

記録媒体1をXYステージ14のトに置きまず目視によ
りプローブ電極2の位置をきめ固定した。Au/Pd′
准Vi3とプローブの間に3vの電圧を印加し、電流を
モニターしながらプローブ電極2と記録層101表面と
の距離Zを調整した。プローブ電極、極2に+300m
Vの電圧をかけたところ測定された電流値は1 pA以
下であった。電圧印加をやめ、ヘリウム−ネオンレーザ
−を用いて記録媒体1を照射し、再度プローブ電極2に
+3vの電圧をかけ、記録を行ったところ電気が良好に
流れるON状態に遷移した。光照射、電圧印加をやめて
再度同じ位置でプローブ電極2に一300mVの電圧を
印加し、記録再生を行ったところ5nAの電流が流れO
N状態が保存され、記録が保存されているのが分かった
。
The recording medium 1 was placed on the XY stage 14, and the position of the probe electrode 2 was determined and fixed visually. Au/Pd′
A voltage of 3 V was applied between the quasi-Vi3 and the probe, and the distance Z between the probe electrode 2 and the surface of the recording layer 101 was adjusted while monitoring the current. Probe electrode, +300m to pole 2
When a voltage of V was applied, the measured current value was 1 pA or less. When the voltage application was stopped, the recording medium 1 was irradiated with a helium-neon laser, and a voltage of +3 V was applied to the probe electrode 2 again to perform recording, the probe electrode 2 transitioned to an ON state in which electricity flows well. After stopping the light irradiation and voltage application, a voltage of -300 mV was applied to the probe electrode 2 again at the same position, and when recording and reproducing were performed, a current of 5 nA flowed.
It was found that the N state was saved and the records were saved.

電圧印加をやめ炭酸ガスレーザーを用いて記録部位を照
射し、振動エネルギーを与えた。再度同じ位置でプロー
ブ電極2に+300mVの電圧を印加し、記録再生した
ところ電流値1ρ八以下のOFF状態に遷移し、記録が
消去されたことが確認された。
The voltage application was stopped and the recording site was irradiated with a carbon dioxide laser to provide vibrational energy. When a voltage of +300 mV was again applied to the probe electrode 2 at the same position and recording/reproduction was performed, a transition occurred to an OFF state with a current value of 1ρ8 or less, and it was confirmed that the recording had been erased.

実施例4 実施例1と同様に第1図に示す記録再生装置を用いた。Example 4 As in Example 1, the recording and reproducing apparatus shown in FIG. 1 was used.

オクタデシルテトラシアノキノジメタン/Sfi鉗体(
ODTCNQ/Ag)の成膜方法について記す。アセト
ニトリル(ACN)を溶媒に用い0DTcNQ/Agの
4*Io−’Mの濃度の溶液を調整した。この78液を
純水20℃の水相に展開し、表面圧を15111N/[
11まで高め、水面上に単分子膜を形成した。表面圧を
一定に保ちながらあらがじめ水相中に浸漬しておいたn
”−3i基板を水面に横切る方向に静かに5 mm/m
inの速さで引き一トげ、oorcNQ/Ag単分子膜
をn”−5i基板上に成膜した。これを記録媒体1とし
た。
Octadecyltetracyanoquinodimethane/Sfi forceps (
The method for forming a film of ODTCNQ/Ag) will be described. A solution of 0DTcNQ/Ag at a concentration of 4*Io-'M was prepared using acetonitrile (ACN) as a solvent. This 78 liquid was developed into an aqueous phase of pure water at 20°C, and the surface pressure was adjusted to 15111N/[
11 to form a monomolecular film on the water surface. The sample was previously immersed in the aqueous phase while keeping the surface pressure constant.
”-3i board gently at 5 mm/m in the direction across the water surface.
A monomolecular film of oorcNQ/Ag was formed on the n''-5i substrate by pulling the film at a speed of 1.5 in. This was designated as recording medium 1.

次にOD T CN Q / A g −L B Mを
1層累積した記録媒体1を用いた、記録・再生・消去の
実験について記す。記録媒体1をXYステージ14の上
に置きまず目視によりプローブ電極2の位置をきめ固定
した。電極(nゝ−3i)3とプローブの間に3vの電
圧を印加し、電流をモニターしながらプローブ電極2と
記録層101表面との距SZを調整した。プローブ電極
2に+300mVの電圧をがけたところ測定された電流
値は1p八以下であった。電圧印加をやめ、ヘリウム−
ネオンレーザ−を用いて記録媒体1を照射し、再度プロ
ーブ電極2に+3vの電圧をかけ、記録を行ったところ
電気が良好に流れるON状態に遷移した。光照射、電圧
印加をやめて再度同じ位置でプローブ電極2に+300
+nVの電圧を印加し、記録再生を行ったところ5nA
の電流が流れON状態が保存され、記録が保存されてい
るのが分かった。
Next, a recording/reproducing/erasing experiment using the recording medium 1 in which one layer of ODTCNQ/Ag-LBM was accumulated will be described. The recording medium 1 was placed on the XY stage 14, and the position of the probe electrode 2 was determined and fixed visually. A voltage of 3 V was applied between the electrode (n-3i) 3 and the probe, and the distance SZ between the probe electrode 2 and the surface of the recording layer 101 was adjusted while monitoring the current. When a voltage of +300 mV was applied to the probe electrode 2, the measured current value was 1p8 or less. Stop applying voltage and turn off the helium
The recording medium 1 was irradiated with a neon laser, a voltage of +3 V was applied to the probe electrode 2 again, and recording was performed, resulting in a transition to an ON state in which electricity flows well. Stop light irradiation and voltage application and apply +300 to probe electrode 2 at the same position again.
When a voltage of +nV was applied and recording/reproduction was performed, the result was 5nA.
It was found that the current flowed, the ON state was preserved, and the record was preserved.

電圧印加をやめ炭酸ガスレーザーを用いて記録部位を照
射し、振動エネルギーを与えた。再度同じ位置でプロー
ブ電極2に+300mVの電圧を印加し、記録再生した
ところ電流値ip八へ下のOFF状態に遷移し、記録が
消去されたことが確認された。
The voltage application was stopped and the recording site was irradiated with a carbon dioxide laser to provide vibrational energy. When a voltage of +300 mV was again applied to the probe electrode 2 at the same position and recording and reproduction was performed, the current value changed to ip8 and the state shifted to the OFF state below, confirming that the recording was erased.

(発明の効果〕 1)LB法により単分子膜を形成させるため化学吸着法
等に比較して分子の秩序が優れており、且つ高密度な膜
で得ることができるため超高密度記録媒体に通している
。
(Effects of the invention) 1) Since a monomolecular film is formed by the LB method, the molecular order is superior compared to chemical adsorption methods, etc., and a high-density film can be obtained, making it suitable for ultra-high-density recording media. I'm passing through.

2)光照射を行いなから記録を行うので再生時における
書き込みエラーを防止することができる。
2) Since recording is performed without performing light irradiation, writing errors during reproduction can be prevented.

3)記録消去時において振動エネルギーを与えなければ
ならないので保存安定性に俺れる。
3) Since vibration energy must be applied when erasing records, storage stability is compromised.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の記録再生装置の実施例である。 15;光源 +01:記録層 FIG. 1 shows an embodiment of the recording/reproducing apparatus of the present invention. 15; light source +01: Recording layer

Claims (1)

【特許請求の範囲】 1)電荷移動錯体の単分子膜からなる記録媒体、光源お
よびプローブ電極を有する記録再生装置 2)前記単分子膜が前記プローブ電極と該プローブ電極
に対向して配置された電極との間に配置されている請求
項1に記載の記録再生装置 3)前記単分子膜がラングミュアーブロジェット法によ
り形成されている請求項1に記載の記録再生装置 4)前記電荷移動錯体が金属または金属イオン及び有機
電子受容体よりなる請求項1に記載の記録再生装置 5)前記プローブ電極のXY走査駆動装置を有している
請求項1に記載の記録再生装置 6)前記プローブ電極と記録媒体の相対位置を3次元的
に微動制御する手段を有している請求項1に記載の記録
再生装置 7)記録媒体に光源より光照射を行いながら、情報に応
じて該記録媒体にメモリ効果を生じるしきい値電圧を超
えた電圧をプローブ電極によって印加することにより情
報の記録を行う方法 8)プローブ電極に電圧を印加し、かつ記録媒体とプロ
ーブ電極との間隔を一定に保ちながらプローブ電極を記
録媒体に沿って走査し、プローブ電極に流れる電流値の
変化を検知することにより情報を再生する方法 9)請求項1に記載の記録媒体に記録された情報を振動
エネルギーを与えることにより消去する方法
[Scope of Claims] 1) A recording/reproducing device having a recording medium made of a monomolecular film of a charge transfer complex, a light source, and a probe electrode. 2) The monomolecular film is arranged to face the probe electrode and the probe electrode. 3) The recording/reproducing device according to claim 1, wherein the monomolecular film is formed by a Langmuir-Blodgett method; 4) the charge transfer complex; 5) The recording/reproducing device according to claim 1, wherein the recording/reproducing device comprises a metal or a metal ion and an organic electron acceptor. 5) The recording/reproducing device according to claim 1, further comprising an XY scanning drive device for the probe electrode. 6) The probe electrode 7) The recording/reproducing apparatus according to claim 1, further comprising means for finely controlling the relative position of the recording medium in three dimensions.7) While irradiating the recording medium with light from a light source, the recording medium is A method of recording information by applying a voltage that exceeds a threshold voltage that causes a memory effect using a probe electrode. 8) While applying a voltage to the probe electrode and keeping the distance between the recording medium and the probe electrode constant. A method of reproducing information by scanning a probe electrode along a recording medium and detecting a change in the value of a current flowing through the probe electrode 9) Applying vibrational energy to the information recorded on the recording medium according to claim 1. How to erase by
JP30222388A 1988-10-04 1988-12-01 Recording/playback device and method Pending JPH02149954A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP30222388A JPH02149954A (en) 1988-12-01 1988-12-01 Recording/playback device and method
CA002000071A CA2000071C (en) 1988-10-04 1989-10-03 Recording and reproducing apparatus and recording and reproducing method and recording medium for the recording and reproducing method
EP89310092A EP0363147B1 (en) 1988-10-04 1989-10-03 Recording and reproducing apparatus and recording and reproducing method and recording medium for the recording and reproducing method
DE68926602T DE68926602T2 (en) 1988-10-04 1989-10-03 Apparatus and method for recording and reproducing and recording medium for the recording and reproducing method
AT89310092T ATE139051T1 (en) 1988-10-04 1989-10-03 APPARATUS AND METHOD FOR RECORDING AND REPRODUCTION AND RECORDING MEDIUM FOR THE RECORDING AND REPRODUCTION PROCESS
US08/019,344 US5439777A (en) 1988-10-04 1993-02-18 Recording and reproducing apparatus and method for applying a pulse voltage and an electromagnetic wave

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30222388A JPH02149954A (en) 1988-12-01 1988-12-01 Recording/playback device and method

Publications (1)

Publication Number Publication Date
JPH02149954A true JPH02149954A (en) 1990-06-08

Family

ID=17906431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30222388A Pending JPH02149954A (en) 1988-10-04 1988-12-01 Recording/playback device and method

Country Status (1)

Country Link
JP (1) JPH02149954A (en)

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