JPH02162901A - Loaded line phase shifter - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to reducing the size, weight, and loss of a loaded line phase shifter used in the microwave band.

[Conventional technology]

FIG. 3 is a diagram showing the configuration of a single-bit phase shifter of a conventional loaded line type phase shifter. This is an example of a phase shifter. In the figure (1
) is a gallium arsenide semiconductor substrate that constitutes a microstrip line.

(2) is the main line consisting of a microstrip line constructed on the semiconductor substrate (1), (3) is the loading line, (4) is the drain electrode of the FET, and (5) is the FET.
, (6) is the source electrode of the FET, and (7) is an FET that combines (4), (5), and (6). (81 is a resistor, (9) is a capacitor, G is a capacitor grounding pad, αD is a gate bias application pad, (I3 is f
all +9+ fi (This is a gate bias circuit that integrates 10D. 0( is a grounding I-rad.

(141 is a high impedance line, α is 0α41'1
B: Comprehensive grounding circuit. Oe is an input/output line made of a microstrip line.

FIG. 4 is an example of a conventional 2-bit loaded line phase shifter configured by cascading the single-bit loaded line phase shifters shown in FIG. 3. (3a) Consisting of a U microstrip line The 1st bit loading line, (sb) is also the 2nd bit loading line, and the other symbols are the same as in FIG. 3.

Next, the operation will be explained. This loaded line type phase shifter controls the transmission phase of the microwave that enters from one input/output line a11 and exits to the other input/output line θG through the main line (21'f). By changing the bias state of the FET, the transmission phase of the main line is switched, and the phase difference is used to function as a desired phase shifter.

In Fig. 3, the transmission phase of the microwave input to one input/output line Oe is the same as the loading line (2) parallel to the main line (2).
3) is added. At this time.

If the susceptance value of the loaded line (3) seen from the main line (2) is a positive value, the loaded line (3) becomes a capacitive component, and the transmission phase of the passing microwave is delayed at that point, and the susceptance value becomes negative. If it is a value, the loading line (3) becomes an inductive component, and the transmission phase of the passing microwave advances at that point. In this way, by switching the susceptance value of the loaded line (3) seen from the main line (2) between positive and negative, the transmission phase changes, and the difference is used to operate as a phase shifter. Next, a method of changing the susceptance of the loading line (3) will be explained. Drain electrode (4), gate electrode (5)
, a source electrode (6), and an FET (71) whose impedance changes depending on the DC bias voltage applied to the gate electrode (5).

Normally, when the gate electrode (5) is set to the same potential as the drain electrode (4) and source electrode (6), the impedance is O
When K approaches K and the gate electrode (5) is set below the pinch-off voltage of the FIT, the impedance approaches infinity.In this way, the DC bias voltage is switched and the impedance changes FET (71 is caused by the loading line (3) Impedance conversion is performed and the susceptance value seen from the main line (2) is switched to a desired value.

Note that the loading line (3) is added to both ends of the main line (2).

The structure doubles the effect of transmission phase change and cancels the reflection of the loading line.

In FIG. 4, since each bit gives a desired transmission phase change as explained above, a total of four transmission phases can be set, and the device functions as a 2-bit load line type phase shifter.

[Problem to be solved by the invention]

When a conventional loaded line phase shifter is configured as a 2-bit phase shifter, it is configured in cascade connection to the main line (2), so the shape of the phase shifter needs to be enlarged.
Also, because the main line is twice as long as that for 1 bit, there is an insertion loss for microwaves.

There was an issue of increasing demand.

This invention was made in order to solve the above-mentioned problems, and it is an object of the present invention to obtain a low-deadline phase shifter that can reduce the insertion loss of microwaves by reducing the size of the phase shifter. With the goal.

[Problem t-Means for solving]

A loaded line phase shifter according to the present invention.

In this method, a multi-bit phase shifter is constructed using a plurality of single-bit phase shifters, in which part or all of the main line of each single-bit phase shifter is shared.

[Effect]

The loaded line phase shifter in this invention is:

In the method of configuring a multi-bit phase shifter using multiple single-bit phase shifters, the space on both sides of the main line can be used effectively because part or all of the main line of each single-bit phase shifter is shared. Since the length of the main line is approximately 172 mm, the phase shifter can be made smaller, lighter, and have lower loss.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIGS. 1 and 2 are diagrams showing the structure of a 2-bit low dead line phase shifter according to the present invention.

Items <1) to 011 in the figure are the same as those in FIGS. 3 and 4.

When configuring a 2-bit phase shifter, the main line (2) is shared, the 1st bit loading line (3a) is added in parallel to one side of the main line (2), and the 2nd bit loading line (3a) is added to the other side of the main line. Loading line (
sb) It is configured to add t-. An FET (71) is connected in series at the tip of each loading line, and is provided with means for applying a DC bias voltage to each FET.

In FIG. 1, two 1st bit loading lines (3a) and two 2nd bit loading lines (3b) are used, and in FIG.

The second bit loading line (3b) is composed of only one line.

Next, the operation will be explained. In FIG.

The microwave input to one end of the input/output line travels along the input/output line, and is connected to the 1st bit loading line (3a) and the 2nd bit loading line (3b) in parallel to the main line (2).
The transmission phase of the microwave changes at the point where is added.

At this time, the susceptance value of the 1st bit loading line (3a) as seen from the main line (2) changes in two ways, and in addition, the susceptance value of the 2nd bit loading line (3b) changes in 2 ways. , so there are a total of four different susceptance values. In this way, the transmission phase of the microwave passing through the main line (2) can be set in four ways based on the four susceptance values.

Operates as a 2-bit phase shifter. The method of changing the susceptance value of the loaded line is the same as the conventional method.

In addition, in Figure 1, the 1st bit loading line (3a), 2
Two main lines (2) for each bit loading line (3b)
is added in parallel to double the transmission phase change effect and cancel the reflection of the loading line. In FIG. 2, there is only one 2nd bit loading line (3b), and the 2nd bit receives a transmission phase change from only one loading line. This method of reducing the number of loading lines to one is an effective method for obtaining a minute amount of phase shift.

In the above embodiments, a 2-bit loaded line phase shifter has been described, but a multi-bit phase shifter having a 3-bit phase shifter or more may also be described.

Application is possible by devising the pattern layout. Furthermore, the circuit configuration of the phase shifter is a monolithic MIC in which FETs and capacitors are fabricated on a single board.
Hybrid type M made by assembling parts on a board or board
It can be applied to both ICs. Moreover, it is applicable not only to MIC but also to strip lines and coaxial lines. The present invention can also be applied to a phase shifter using a PIN diode instead of PET as a switching element. In addition, the main line may not be completely shared, but may be partially shared. [Effects of the Invention] As described above, according to the present invention, each main line of the single-bit loaded line phase shifter Since the multi-bit loaded line phase shifter is configured so that some or all of the lines are shared, the phase shifter can be made smaller, lighter, and have lower loss.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing a 2-bit load line type phase shifter according to one embodiment of the present invention, FIG. 2 is a diagram showing a 2-bit load line type phase shifter according to another embodiment of the invention,
FIG. 3 is a diagram showing a conventional single-bit loaded line type phase shifter, and FIG. 4 is a diagram showing a conventional two-bit loaded line type phase shifter. In the figure, (1) is the semiconductor substrate, (2) is the main line, (3) is the loading line, (5a) is the 1st bit loading line, (
3b) is the second bit loading line, (4) is the drain electrode,
(5) is the gate electrode, (6) is the source electrode, (7) is the F
ET, (81 is a resistor, (9) is a capacitor, αG is a capacitor grounding pad, aD is a gate bias application pad, aZ is a gate bias circuit, a3 is a grounding pad, α knob is a high impedance line, α!i is the ground circuit, O
F3 is an input/output line. Note that the same reference numerals in Figure 6 indicate the same or equivalent parts.

Claims (4)

[Claims] (1) A main line consisting of a strip line formed on a substrate board. A loaded line consisting of a strip line is added in parallel to both ends of the above main line. It was connected in series to the tip of each of the above loading lines.
A semiconductor element that exhibits different impedances by changing the applied DC bias voltage. In a method of configuring a multi-bit loaded line phase shifter using multiple stages of single bit loaded line phase shifters each having means for applying a DC bias voltage to the semiconductor element. A loaded line type phase shifter characterized in that a part or all of the main line of each single bit loaded line type phase shifter is shared by a plurality of bits. (2) A main line consisting of a strip line formed on a substrate board. A loaded line consisting of a strip line is added in parallel to both ends of the above main line. It was connected in series to the tip of each of the above loading lines.
A semiconductor element that exhibits different impedances by changing the applied DC bias voltage. In a method of constructing a multi-bit loaded line phase shifter using a single bit loaded line phase shifter comprising means for applying a DC bias voltage to the semiconductor element. Add a loading line in addition to the loading line above in parallel to the main line of the single-bit phase shifter. It was connected in series to the tip of the loading line.
A semiconductor element that exhibits different impedances by changing the applied DC bias voltage. A loaded line type phase shifter characterized in that it can be made into multiple bits by comprising means for applying a DC bias voltage to the semiconductor element. (3) Main line. A loaded line phase shifter according to claims (1) and (2), characterized in that the loaded line is a triplate strip line. (4) Main line. A loaded line phase shifter according to claims (1) and (2), characterized in that the loading line is a coaxial line.