JPH0216529A - Method of lowering resistance of transparent electrode - Google Patents

Method of lowering resistance of transparent electrode

Info

Publication number
JPH0216529A
JPH0216529A JP63168037A JP16803788A JPH0216529A JP H0216529 A JPH0216529 A JP H0216529A JP 63168037 A JP63168037 A JP 63168037A JP 16803788 A JP16803788 A JP 16803788A JP H0216529 A JPH0216529 A JP H0216529A
Authority
JP
Japan
Prior art keywords
metal
transparent electrode
photoresist
substrate
transparent electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63168037A
Other languages
Japanese (ja)
Inventor
Kaname Miyazawa
宮澤 要
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP63168037A priority Critical patent/JPH0216529A/en
Publication of JPH0216529A publication Critical patent/JPH0216529A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8051Anodes
    • H10K59/80516Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines

Landscapes

  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Liquid Crystal (AREA)

Abstract

PURPOSE:To inexpensively form transparent electrodes without requiring a special aligner for forming the transparent electrodes as metallic wirings by selectively coating a metal on the patterned transparent electrodes, coating the surface of an electrode substrate with a negative type photoresist and stripping the photoresist, then etching away the exposed metal. CONSTITUTION:The patterned transparent electrodes 2 are formed on a glass substrate 1 and only the surface of the transparent electrodes is selectively coated with the metal 3 by chemical plating or electroplating. The surface of the transparent electrode substrate coated with the metal is coated with the negative type photoresist 4. The substrate is then irradiated with UV rays from the rear side of the substrate and the photoresist on the metal is stripped by development. The exposed metal is etched away and the remaining photoresist is completely stripped. The selective metallization of only the two side edges of the transparent electrodes is enabled in this way without requiring a special photomask.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は液晶パネル、ELパネル等のガラス基板上に形
成された透明電極の金属アシストによる低抵抗化の方法
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for reducing the resistance of a transparent electrode formed on a glass substrate of a liquid crystal panel, an EL panel, etc. by metal assist.

〔従来の技術a 表示素子のパターン密度の増加、駆動周波数の増加によ
り透明電極の低抵抗化が増々望まれている。透明電極は
各種の材料、製膜方法の改善により、2 X 1 (f
”’Ω・α程度が量産的に得られるようになっているが
、低抵抗化に対する要求はさらに厳しくこれより10%
以下にする必要性がある。
[Prior Art a] With the increase in pattern density and drive frequency of display elements, it is increasingly desired to lower the resistance of transparent electrodes. Through improvements in various materials and film-forming methods, transparent electrodes can be made with 2 x 1 (f
``Although it is now possible to mass-produce resistances around Ω・α, the demand for lower resistance is even stricter, and it is 10% lower than this.
It is necessary to do the following.

そのために金属配線を透明電極に重ねて得ようとする試
みがなされている。一般には、パターン化された透明電
極基板上に金属(Or、Ti、Ni−0r 、Ni等)
を全面被覆し、フォト法により一部の金属を残す方法が
とられているが、数ミクロン以下の線巾で金属を断線な
く配することは非常に困難であり、又巾広く残すと開口
率がさがり表示全体の暗さをもたらすといった欠点を有
していた。
For this purpose, attempts have been made to overlap metal wiring with transparent electrodes. Generally, a metal (Or, Ti, Ni-0r, Ni, etc.) is placed on a patterned transparent electrode substrate.
A method has been used to cover the entire surface and leave some metal by photo method, but it is extremely difficult to arrange metal with a line width of several microns or less without disconnection, and if a large width is left, the aperture ratio will be reduced. This has the disadvantage that the display becomes dark as a whole.

[発明が解決しようとする課題] 本発明はかかる金属配線上の欠点を解決するための方法
を提供するものであり、透明電極の両側エツジのみを選
択的に金属化することを考え、それを特別なフォトマス
クを必要とすることなく得ることを目的としたものであ
る。
[Problems to be Solved by the Invention] The present invention provides a method for solving such drawbacks in metal wiring, and considers selectively metalizing only the edges of both sides of a transparent electrode, and The purpose is to obtain this without requiring a special photomask.

[課題を解決するための手段] 本発明の透明電極の低抵抗化方法は、透明電極の抵抗を
金属被覆により低抵抗化する方法において (a)ガラス基板上にパターン化された透明電極を形成
する工程 Cb)透明電極上にのみ選択的に化学メッキ又は電気メ
ッキにて金属を被覆する工程 (c)ネガ型光レジストにより該金属被覆透明電極基板
表面を被覆する工程 (d)基板の裏側から紫外線を照射し、現像により金属
上の光レジストをストリップする工程(t)II出した
金属をエツチング除去する工程(f)残された光レジス
トを全てストリップする工程 (a)〜(f)を少なくとも含むことを特徴とする。
[Means for Solving the Problems] A method for reducing the resistance of a transparent electrode of the present invention includes (a) forming a patterned transparent electrode on a glass substrate in a method for reducing the resistance of a transparent electrode by coating with a metal; Step Cb) Step of selectively coating metal only on the transparent electrode by chemical plating or electroplating (c) Step of coating the surface of the metal-coated transparent electrode substrate with a negative photoresist (d) Step of coating the surface of the metal-coated transparent electrode substrate from the back side of the substrate step (t) of stripping the photoresist on the metal by irradiating ultraviolet rays and developing; (t) a step of etching away the exposed metal; and (f) stripping all the remaining photoresist. At least the steps (a) to (f) It is characterized by containing.

本発明を第1図を用いて説明する。The present invention will be explained using FIG.

第1図(a)において1はガラス基板であり、ソーダガ
ラス、ホウクイ酸ガラス、石英ガラス等が用いられ、必
要に応じてSin、、At、0゜等のパシペイション処
理がなされる。2は透明電極であり、工To、ATO,
ZnO,At、O。
In FIG. 1(a), reference numeral 1 denotes a glass substrate, which is made of soda glass, borosilicate glass, quartz glass, etc., and is subjected to passivation treatment such as Sin, At, 0°, etc., as required. 2 is a transparent electrode;
ZnO, At, O.

等が用いられるが、現在までのところ工TOが最も小い
低抵抗を有しており2 X i O−’ΩmがMIN値
である。スパッタリング、蒸着、PVD等の手段で被覆
され、所定のフォト工程を経て第1図のようにパターニ
ングされる。
etc. are used, but to date, TO has the lowest resistance, and the MIN value is 2 X i O-'Ωm. It is coated by means of sputtering, vapor deposition, PVD, etc., and is patterned as shown in FIG. 1 through a predetermined photo process.

次に工程Cb)において3は金属であり、透明電極上に
選択的に被覆する手段により形成される。電気メッキ、
化学メッキはその手段であり、特に化学メッキは有効な
手段である。化学メッキにより選択的に透明電極上に金
属化する方法は本発明者らによりすでに知られた手段で
ある。N1−P又はN i −P / A u 、 M
 i −P / Ou 、 M i −P / N i
−B * N i−P / M i−B / A u等
の単−金属又は積層メッキを用いることができる。複層
メッキの場合は工程(f)後に二層目以後を行なっても
よい。又必要により熱処理等の密着性向上手段を追加す
ることも可能である。
Next, in step Cb), 3 is a metal and is formed by selectively coating the transparent electrode. electroplating,
Chemical plating is a means for this purpose, and chemical plating is a particularly effective means. A method of selectively metallizing a transparent electrode by chemical plating is a method already known by the present inventors. N1-P or N i -P / A u , M
i-P/Ou, M i-P/Ni
-B*Ni-P/Mi-B/Au, etc. Single metal or multilayer plating can be used. In the case of multilayer plating, the second and subsequent layers may be applied after step (f). It is also possible to add adhesion improving means such as heat treatment, if necessary.

次に工程(c)において4はフォトレジストであり、ネ
ガ型のみが適用でき、スピンコード法。
Next, in step (c), 4 is a photoresist, and only a negative type can be applied, and a spin code method is used.

ロールフート法等により被覆される。It is coated by a roll foot method or the like.

次に工程(d)は基板の裏側からUV光を照射する工程
と原像工程を示したものである。本発明の目的からして
平行光線でない方がより望ましい次に工程(e)は露出
した金属のエツチングであり透明電極のエツチングと選
択比の大きなものを選択する必要がある。
Next, step (d) shows a step of irradiating UV light from the back side of the substrate and an original image step. For the purposes of the present invention, it is more desirable to use non-parallel light.The next step (e) is the etching of the exposed metal, and it is necessary to select a method that has a large etching selectivity with respect to the transparent electrode.

次に工程(f)はレジストの剥離工程であり、この工程
により透明電極の両エツジが金属化された電極が完成す
る。
Next, step (f) is a resist stripping step, and through this step, an electrode in which both edges of the transparent electrode are metallized is completed.

[実施例] S10.パシベイシコンヲ施シた1、2m厚ソーダガラ
ス上に1500Xの工TOをスパッタリングで被覆し所
定の方法でパターニングした。・・・・・・工程(a) シート抵抗は15Ω/口であった。
[Example] S10. A 1 to 2 m thick soda glass coated with a passivation coating was coated with 1500X TO by sputtering and patterned using a predetermined method. ...Step (a) Sheet resistance was 15Ω/hole.

次に基板をp a o t、  ・S n Ot、混合
アクチベーターである日立化成社製Hi9101Bに5
分間浸漬し、さらに水洗した。次にカニゼン社製無電解
N1−PメッキS−680でsoooXmt−Pメッキ
した。次に無電解Mi−Bメッキ(奥野製薬製ナイクラ
ッド704)を2μメッキした・・・・・・工程(b) 次にロールコータにより電極面にネガ型フォトレジスト
である東京応化製OMR−85を1μ塗布した。・・・
・・・工程(c) 次に基板の裏側から紫外線により露光現像を行なった。
Next, the substrate was exposed to a mixed activator, Hi9101B manufactured by Hitachi Chemical Co., Ltd., for 5 minutes.
It was soaked for a minute and then washed with water. Next, soooXmt-P plating was performed using electroless N1-P plating S-680 manufactured by Kanigen Co., Ltd. Next, 2μ of electroless Mi-B plating (Nyclad 704 manufactured by Okuno Pharmaceutical Co., Ltd.) was plated...Step (b) Next, a negative photoresist OMR-85 manufactured by Tokyo Ohka Chemical Co., Ltd. was applied to the electrode surface using a roll coater. 1μ was applied. ...
...Step (c) Next, exposure and development was performed using ultraviolet rays from the back side of the substrate.

・・・・・・工程(d) 次にHNO,、H,304,01(,0OOHから残る
エツチング液でN1−B、N1−Pをエツチング除去し
た。・・・・・・工程(d)次に残されたフォトレジス
トを除去した。・・・・・・工程(f) 体電極として用いられる。
...Step (d) Next, N1-B and N1-P were etched away using the etching solution remaining from HNO,,H,304,01(,0OOH. ...Step (d) Next, the remaining photoresist was removed. Step (f) Used as a body electrode.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)〜(f −を示す基板断面図。 1・・・・・・・・・ガラス基板 2・・・・・・・・・透明電極 3・・・・・・・・・メッキされた金属4・・・・・・
・・・ネガ型フォトレジスト)l’!、本発明のプロセ
スフロ [発明の効果コ
FIG. 1 (a) to (f-) are cross-sectional views of the substrate. 1...Glass substrate 2...Transparent electrode 3... Plated metal 4...
...Negative photoresist) l'! , the process flow of the present invention [the effect code of the invention]

Claims (1)

【特許請求の範囲】 透明電極の抵抗を金属被覆により低抵抗化する方法にお
いて、 (a)ガラス基板上にパターン化された透明電極を形成
する工程 (b)透明電極上にのみ選択的に化学メッキ又は電気メ
ッキにて金属を被覆する工程 (c)ネガ型光レジストにより該金属被覆透明電極基板
表面を被覆する工程 (d)基板の裏側から紫外線を照射し、現像により金属
上の光レジストをストリップする工程 (e)露出した金属をエッチング除去する工程 (f)残された光レジストを全てストリップする工程 (a)〜(f)を少なくとも含むことを特徴とする透明
電極の低抵抗化方法。
[Claims] A method for lowering the resistance of a transparent electrode by metal coating, which includes: (a) forming a patterned transparent electrode on a glass substrate; (b) selectively applying a chemical coating only on the transparent electrode; (c) Covering the surface of the metal-coated transparent electrode substrate with a negative photoresist (d) Applying ultraviolet rays from the back side of the substrate and developing the photoresist on the metal. A method for reducing the resistance of a transparent electrode, comprising at least the steps (a) to (f) of stripping (e) etching away the exposed metal and (f) stripping all the remaining photoresist.
JP63168037A 1988-07-05 1988-07-05 Method of lowering resistance of transparent electrode Pending JPH0216529A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63168037A JPH0216529A (en) 1988-07-05 1988-07-05 Method of lowering resistance of transparent electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63168037A JPH0216529A (en) 1988-07-05 1988-07-05 Method of lowering resistance of transparent electrode

Publications (1)

Publication Number Publication Date
JPH0216529A true JPH0216529A (en) 1990-01-19

Family

ID=15860649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63168037A Pending JPH0216529A (en) 1988-07-05 1988-07-05 Method of lowering resistance of transparent electrode

Country Status (1)

Country Link
JP (1) JPH0216529A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997034447A1 (en) * 1996-03-12 1997-09-18 Idemitsu Kosan Co., Ltd. Organic electroluminescent element and organic electroluminescent display
JPH10106751A (en) * 1996-09-30 1998-04-24 Nec Corp Electrode structure of organic thin film electroluminescent display
WO1999059024A3 (en) * 1998-05-12 2000-01-13 Minnesota Mining & Mfg Display substrate electrodes with auxiliary metal layers for enhanced conductivity
JP2006162732A (en) * 2004-12-03 2006-06-22 Bridgestone Corp Panel for information display and information display device
JP2007065260A (en) * 2005-08-31 2007-03-15 Seiko Epson Corp Method for manufacturing electrophoresis apparatus, electrophoresis apparatus, and electronic apparatus
JP2009525583A (en) * 2006-01-31 2009-07-09 トーマス・アンド・ベッツ・インターナショナル・インコーポレーテッド Vacuum switchgear

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997034447A1 (en) * 1996-03-12 1997-09-18 Idemitsu Kosan Co., Ltd. Organic electroluminescent element and organic electroluminescent display
EP1555856A3 (en) * 1996-03-12 2010-09-22 Idemitsu Kosan Company Limited Organic electroluminescence element and organic electroluminescence display device
JPH10106751A (en) * 1996-09-30 1998-04-24 Nec Corp Electrode structure of organic thin film electroluminescent display
WO1999059024A3 (en) * 1998-05-12 2000-01-13 Minnesota Mining & Mfg Display substrate electrodes with auxiliary metal layers for enhanced conductivity
US6037005A (en) * 1998-05-12 2000-03-14 3M Innovative Properties Company Display substrate electrodes with auxiliary metal layers for enhanced conductivity
JP2006162732A (en) * 2004-12-03 2006-06-22 Bridgestone Corp Panel for information display and information display device
JP2007065260A (en) * 2005-08-31 2007-03-15 Seiko Epson Corp Method for manufacturing electrophoresis apparatus, electrophoresis apparatus, and electronic apparatus
JP2009525583A (en) * 2006-01-31 2009-07-09 トーマス・アンド・ベッツ・インターナショナル・インコーポレーテッド Vacuum switchgear

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