JPH02168548A - Charged particle beam irradiation type X-ray analyzer - Google Patents
Charged particle beam irradiation type X-ray analyzerInfo
- Publication number
- JPH02168548A JPH02168548A JP63322915A JP32291588A JPH02168548A JP H02168548 A JPH02168548 A JP H02168548A JP 63322915 A JP63322915 A JP 63322915A JP 32291588 A JP32291588 A JP 32291588A JP H02168548 A JPH02168548 A JP H02168548A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- charged particle
- particle beam
- hole
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はXMマイクロアリ−ライザのような荷電粒子(
電子、イオン)ビームで試料を照射し、試料から放射さ
れるX線を分光して試料の元素分析とか構造解析を行う
X線分析装置のX!l!i1分光検出手段に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention is directed to the application of charged particles (
The X! l! This invention relates to i1 spectral detection means.
(従来の技術)
上述したような分析装置においてはX線分光法として分
光結晶を用いる波長分散方式或は入射X線の光子エネル
ギーに比例した波高のパルスを出力する比例計数管或は
半導体検出器を用いるエネルギー分散方式が用いられて
いるが、従来は何れの方式による場合ではも、X線分光
検出手段は試料照射ビームとは異る方向から試料のビー
ム照射点を望むように設置されていた。(Prior art) In the above-mentioned analysis device, X-ray spectroscopy uses a wavelength dispersion method using a spectroscopic crystal, or a proportional counter or semiconductor detector that outputs a pulse with a wave height proportional to the photon energy of incident X-rays. An energy dispersive method is used, but conventionally, with either method, the X-ray spectroscopic detection means was installed so that it looked at the beam irradiation point on the sample from a direction different from the sample irradiation beam. .
このような従来のX線分光検出手段は試料のビーム照射
点から離れていて、試料のビーム照射点に対して張る立
体角が小さくそのためX線の入射効率が低くなっており
、また試料から放射される特性X線を測定する場合バッ
クグラウンドとなる試料照射粒子の制動輻射による連続
X線強度に対する特性X線の強度の比は照射ビームの照
射方向と反対方向で最大であり、垂直から離れるに従い
小さくなるが、従来方法ではこの照射ビームからかなり
離れた方向でX線を検出しているので、測定のS/N比
が低くなっていた。Such conventional X-ray spectroscopy detection means are located far from the beam irradiation point on the sample, and the solid angle with respect to the sample beam irradiation point is small, resulting in low X-ray incidence efficiency, and the radiation from the sample is small. When measuring characteristic X-rays, the ratio of the intensity of the characteristic X-rays to the continuous X-ray intensity due to the bremsstrahlung radiation of sample irradiation particles, which serves as the background, is maximum in the direction opposite to the irradiation direction of the irradiation beam, and increases as the distance from the vertical direction increases. However, in the conventional method, X-rays are detected in a direction far away from this irradiation beam, resulting in a low measurement S/N ratio.
(発明が解決しようとする課題)
本発明は荷電粒子ビームで試料面を照射し、試料から放
射されるX線を分光検出する装置において、X線の入射
効率を高め、S/N比の良好ならしめたX線の分光検出
装置を提供しようとするものである。(Problems to be Solved by the Invention) The present invention improves the incidence efficiency of X-rays and improves the S/N ratio in a device that irradiates a sample surface with a charged particle beam and spectrally detects the X-rays emitted from the sample. The present invention aims to provide a standardized X-ray spectroscopic detection device.
(課題を解決するための手段)
X線入射面の中央に透孔を有するX線検出素子を試料を
照射する荷電粒子ビームが上記透孔を通過するようにし
、X線入射面を試料面に向けて配置した。(Means for Solving the Problem) An X-ray detection element having a through hole in the center of the X-ray entrance surface is arranged so that the charged particle beam that irradiates the sample passes through the hole, and the X-ray entrance surface is made to face the sample surface. It was placed towards.
(作用)
本発明によればX線検出素子は試料を照射する荷電粒子
ビームを囲んで配置され、X線入射面を試料に向けてい
るから、試料面からのX線取出し角は90°に近(、従
ってS/N比の良い特性X線検出ができ、従来のように
斜めから試料を望むのに比し、X線検出素子の配直に構
造的な制約が少(、X線入射面の試料のビーム照射点に
対して張る立体角を従来より容易に大きくできて、X線
入射効率が高められる。(Function) According to the present invention, the X-ray detection element is arranged surrounding the charged particle beam that irradiates the sample, and the X-ray incident surface is directed toward the sample, so the X-ray extraction angle from the sample surface is 90°. Therefore, characteristic X-rays can be detected with a good S/N ratio, and there are fewer structural restrictions on the arrangement of the The solid angle formed with respect to the beam irradiation point of the sample on the surface can be made larger than before, and the X-ray incidence efficiency can be increased.
(実施例)
図は本発明の一実施例装置を示す。図でBは試料を照射
する荷電粒子ビーム、Lは対物レンズでSは試料である
。Dが本発明に係るX線検出素子で円板状に形成された
半導体X線検出素子であり、中央に透孔りが設けられて
いて荷電粒子ビームBが通過するようになっている。試
料から放射されるX線は図に矢印Xで示すようにX線検
出素子りに入射する。半導体X線検出素子では入射した
X線光子に対し、そのエネルギーに比例した強さのパル
ス電流を発生する。このパルス電流信号はプリアンプP
A比例アンプLAで増幅された後、波高分析器PICA
により測定しようとする特11X線のエネルギーに相当
する波高範囲のパルス信号が取出されてカウンタCによ
り計数される。(Embodiment) The figure shows an apparatus according to an embodiment of the present invention. In the figure, B is the charged particle beam that irradiates the sample, L is the objective lens, and S is the sample. D is an X-ray detection element according to the present invention, which is a semiconductor X-ray detection element formed in a disk shape, and has a hole in the center so that the charged particle beam B can pass through. X-rays emitted from the sample enter the X-ray detection element as shown by arrows X in the figure. In response to incident X-ray photons, a semiconductor X-ray detection element generates a pulse current whose strength is proportional to the energy of the incident X-ray photons. This pulse current signal is the preamplifier P
After being amplified by the A proportional amplifier LA, the pulse height analyzer PICA
A pulse signal having a wave height range corresponding to the energy of the X-ray to be measured is extracted and counted by a counter C.
(発明の効果)
従来のこの種装置では図で鎖線で示すような方向にX線
を取出していたが、本発明では図から明らかなように試
料照射ビームの入射方向と反対方向に放射されるX線を
検出するので、連8% X Mバックグラウンドに対す
る試料の特性X線強度の比が従来例より高くなり、S/
N比の良好な測定ができ、xvA検出素子は試料照射ビ
ームを囲んで、同ビームに近接して配置されるので、X
線検出素子の配置についての構造的制約が少く、X線検
出面を試料面に近付づけ、試料面のビーム照射点Oに対
して張る立体角を容易に大きくすることが太き(するこ
とができるからX線入射効率が良く、従来より分析感度
9分析器度が向」二し、しかも構造的に簡単なものとな
る。(Effects of the Invention) Conventional devices of this type emit X-rays in the direction shown by the chain line in the figure, but in the present invention, as is clear from the figure, the X-rays are emitted in the opposite direction to the incident direction of the sample irradiation beam. Since X-rays are detected, the ratio of the characteristic X-ray intensity of the sample to the background is higher than that of the conventional example, and S/
Good N-ratio measurements can be made, and since the xvA detection element is placed surrounding the sample irradiation beam and close to it,
There are few structural restrictions on the arrangement of the radiation detection element, and it is possible to bring the X-ray detection surface closer to the sample surface and easily increase the solid angle with respect to the beam irradiation point O on the sample surface. Because of this, the X-ray incidence efficiency is good, the analytical sensitivity is 9.2 times higher than that of the conventional analyzer, and the structure is simpler.
図面は本発明の一実施例装置の側面図である。
B・・・荷電粒子ビーム、L・・・対物レンズ、S・・
・試料、D・・・X線検出器、h・・・透孔、PHA・
・・波高分析器、C・・・カウンタ。
代理人 弁理士 縣 浩 介The drawing is a side view of an apparatus according to an embodiment of the present invention. B...Charged particle beam, L...Objective lens, S...
・Sample, D...X-ray detector, h...Through hole, PHA・
... Wave height analyzer, C... Counter. Agent Patent Attorney Kosuke Agata
Claims (1)
線入射面を試料に向け、試料面を照射する荷電粒子ビー
ムが上記透孔を通過するように配置したことを特徴とす
る荷電粒子ビーム照射型X線分析装置。An X-ray detection element with a through hole in the center of the X-ray incident surface is
A charged particle beam irradiation type X-ray analyzer characterized in that the ray incidence surface is directed toward the sample and the charged particle beam irradiating the sample surface is arranged so as to pass through the through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63322915A JPH02168548A (en) | 1988-12-20 | 1988-12-20 | Charged particle beam irradiation type X-ray analyzer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63322915A JPH02168548A (en) | 1988-12-20 | 1988-12-20 | Charged particle beam irradiation type X-ray analyzer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02168548A true JPH02168548A (en) | 1990-06-28 |
Family
ID=18149048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63322915A Pending JPH02168548A (en) | 1988-12-20 | 1988-12-20 | Charged particle beam irradiation type X-ray analyzer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02168548A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS553129A (en) * | 1978-06-21 | 1980-01-10 | Jeol Ltd | X-ray analyzer for scanning electron microscope or the like |
| JPS6136955B2 (en) * | 1978-02-28 | 1986-08-21 | Yaskawa Denki Seisakusho Kk |
-
1988
- 1988-12-20 JP JP63322915A patent/JPH02168548A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6136955B2 (en) * | 1978-02-28 | 1986-08-21 | Yaskawa Denki Seisakusho Kk | |
| JPS553129A (en) * | 1978-06-21 | 1980-01-10 | Jeol Ltd | X-ray analyzer for scanning electron microscope or the like |
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