JPH02168549A - Semiconductor base board ion implanting device - Google Patents
Semiconductor base board ion implanting deviceInfo
- Publication number
- JPH02168549A JPH02168549A JP63324139A JP32413988A JPH02168549A JP H02168549 A JPH02168549 A JP H02168549A JP 63324139 A JP63324139 A JP 63324139A JP 32413988 A JP32413988 A JP 32413988A JP H02168549 A JPH02168549 A JP H02168549A
- Authority
- JP
- Japan
- Prior art keywords
- implantation
- ion implantation
- base board
- semiconductor base
- beam current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000005468 ion implantation Methods 0.000 claims abstract description 16
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000002513 implantation Methods 0.000 abstract description 8
- 230000000737 periodic effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体基板イオン注入装置に関し、特に均一
性の向上に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor substrate ion implantation apparatus, and particularly to improving uniformity.
従来この種の半導体基板イオン注入装置において半導体
基板の回転速度は、イオン注入開始前に設定した値で決
まっていた。Conventionally, in this type of semiconductor substrate ion implantation apparatus, the rotation speed of the semiconductor substrate has been determined by a value set before the start of ion implantation.
上述した従来の半導体基板イオン注入装置はイオンビー
ム電流のバラツキにより注入時間が変化するので整数回
の回転で注入処理が完了せず注入方向の注入量不均一が
発生する。In the conventional semiconductor substrate ion implantation apparatus described above, the implantation time changes due to variations in the ion beam current, so the implantation process is not completed within an integral number of revolutions, resulting in non-uniformity in the implantation amount in the implantation direction.
まだこの不具合を避ける為に回転速度を上げると、イオ
ンビームのＸ、Ｙスキャンと回転の同期現象が起こり、
面内均一性が悪化するという欠点がある。If the rotation speed is increased to avoid this problem, a synchronization phenomenon between the X and Y scans and rotation of the ion beam will occur.
This has the disadvantage that in-plane uniformity deteriorates.
上述した従来の半導体基板イオン注入装置に対し、本発
明はイオン注入処理時の半導体基板の回転速度をイオン
ビーム電流によって制御する機能を持つという相違点を
有する。The present invention differs from the conventional semiconductor substrate ion implantation apparatus described above in that it has a function of controlling the rotational speed of the semiconductor substrate during ion implantation processing using the ion beam current.
本発明の半導体基板イオン注入装置は、イオンビーム電
流により半導体基板の回転速度を制御する回転速度コン
トロ−ラーを有している。The semiconductor substrate ion implantation apparatus of the present invention has a rotation speed controller that controls the rotation speed of the semiconductor substrate using the ion beam current.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例である。FIG. 1 shows an embodiment of the present invention.
イオン注入処理の際には、プラテン５上にある半導体基
板１をプラテン回転用モーター２で回転させてイオンの
注入を行なう。この時の、イオンビーム電流をビーム電
流モニタ一部３によってモニターしこのビーム量から回
転速度コントローラ４によってプラテン回転用モーター
２の回転速度を制御する。これは、イオン注入開始から
終了までに半導体基板が設定された回数だけ回転するよ
うに制御され、また回転速度はイオンビーム電流の変化
によって変わる。During the ion implantation process, the semiconductor substrate 1 placed on the platen 5 is rotated by the platen rotation motor 2 to implant ions. At this time, the ion beam current is monitored by the beam current monitor part 3, and the rotational speed of the platen rotation motor 2 is controlled by the rotational speed controller 4 based on the beam amount. This is controlled so that the semiconductor substrate rotates a set number of times from the start to the end of ion implantation, and the rotation speed changes depending on changes in the ion beam current.
以上説明したように本発明は半導体基板を回転させなが
ら注入処理を行なうイオン注入装置において、半導体基
板の回転速度を下記の式のようにイオンビーム電流によ
って制御する。As described above, the present invention is an ion implantation apparatus that performs implantation processing while rotating a semiconductor substrate, and the rotation speed of the semiconductor substrate is controlled by the ion beam current as shown in the following equation.
設定した回転の回数をｎ回とすると、
これにより整数回の回転でイオン注入処理を完了させる
ことができるので、周期現象で面内均一性が悪化する回
転数を避けて十分低い回転数を設定することにより注入
方向の均一性面内均一性ともに良好な処理が可能となる
。If the set number of rotations is n times, the ion implantation process can be completed in an integral number of rotations, so set a sufficiently low rotation speed to avoid rotation speeds that would deteriorate in-plane uniformity due to periodic phenomena. By doing so, it is possible to perform processing with good uniformity in both the injection direction and the in-plane uniformity.
第１図は本発明の詳細な説明する為の半導体基板イオン
注入装置の一部分の模式図である。
なお、図において
ｌ・・・・・・半導体基板、２・・・・・・プラテン回
転用モーター ３・・・・・・ビーム電流モニタ一部、
４・・・・・・回転速度コントロ−ラー ５・・・・・
・プラテンである。
代理人 弁理士 内 原 晋FIG. 1 is a schematic diagram of a portion of a semiconductor substrate ion implantation apparatus for explaining the present invention in detail. In the figure, l...semiconductor substrate, 2... platen rotation motor, 3... part of the beam current monitor,
4...Rotation speed controller 5...
・It is a platen. Agent Patent Attorney Susumu Uchihara
Claims (1)
イオン注入装置において、イオンビーム電流値により半
導体基板の回転速度を制御する回転速度コントロ−ラー
を有していることを特徴とする半導体基板イオン注入装
置。An ion implantation apparatus for implanting ions while rotating a semiconductor substrate, the apparatus comprising a rotation speed controller for controlling the rotation speed of the semiconductor substrate based on an ion beam current value. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63324139A JPH02168549A (en) | 1988-12-21 | 1988-12-21 | Semiconductor base board ion implanting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63324139A JPH02168549A (en) | 1988-12-21 | 1988-12-21 | Semiconductor base board ion implanting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02168549A true JPH02168549A (en) | 1990-06-28 |
Family
ID=18162572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63324139A Pending JPH02168549A (en) | 1988-12-21 | 1988-12-21 | Semiconductor base board ion implanting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02168549A (en) |
-
1988
- 1988-12-21 JP JP63324139A patent/JPH02168549A/en active Pending
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