JPH0217020B2 - - Google Patents

Info

Publication number
JPH0217020B2
JPH0217020B2 JP14341383A JP14341383A JPH0217020B2 JP H0217020 B2 JPH0217020 B2 JP H0217020B2 JP 14341383 A JP14341383 A JP 14341383A JP 14341383 A JP14341383 A JP 14341383A JP H0217020 B2 JPH0217020 B2 JP H0217020B2
Authority
JP
Japan
Prior art keywords
photoconductive layer
substrate
roughened
photoreceptor
selenium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14341383A
Other languages
Japanese (ja)
Other versions
JPS6033562A (en
Inventor
Akio Arai
Atsushi Asamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP14341383A priority Critical patent/JPS6033562A/en
Publication of JPS6033562A publication Critical patent/JPS6033562A/en
Publication of JPH0217020B2 publication Critical patent/JPH0217020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は、感光層表面が粗面化された電子写真
用感光体の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to a method for manufacturing an electrophotographic photoreceptor in which the surface of a photosensitive layer is roughened.

〔従来技術とその問題点〕[Prior art and its problems]

従来電子写真用感光体は、画像形成、信頼性等
から感光体表面は平滑でなければならないとされ
てきた。例えばこの種の感光体は、一般にSe合
金を用いる感光体が使用され、これは導電性基体
上に真空蒸着法等により無定形Se合金を付着し、
光導電層として用いるものであるが、その表面は
光沢を有する平滑面(鏡面)となつている。この
光導電層の表面が平滑であるとトナーとの密着性
が増大し転写性、クリーニング性、転写紙の分離
性が損われる欠点となつている。また、残留トナ
ー除去のため過度のクリーニング装置が必要とな
り感光体表面を損傷する等、感光体の寿命を低下
させクリーニング不良による画質低下を招く一因
となつている。
Conventionally, electrophotographic photoreceptors have been required to have a smooth surface in view of image formation, reliability, and the like. For example, this type of photoreceptor generally uses a photoreceptor using Se alloy, in which an amorphous Se alloy is deposited on a conductive substrate by vacuum evaporation method or the like.
It is used as a photoconductive layer, and its surface is a glossy smooth surface (mirror surface). If the surface of the photoconductive layer is smooth, the adhesion with the toner increases, resulting in a disadvantage that the transferability, cleaning performance, and separation of the transfer paper are impaired. Furthermore, an excessive amount of cleaning equipment is required to remove residual toner, which damages the surface of the photoreceptor, which shortens the life of the photoreceptor and causes deterioration in image quality due to poor cleaning.

最近上記のような欠点に対し、感光体の表面
は、ある程度荒れていた方が有効であることがわ
かつてきた。光導電層表面に微細な凹凸を付与す
る粗面化の提案がいくつかあるが、いずれも工業
的な難しさから実用化されていない。特に光導電
層形成過程において、Se系のような流動性の光
導電材料からなる光導電層表面を適度に荒らすこ
とは、従来の蒸着方法では因難である。光導電層
形成過程あるいは形成後に異物付着、異物接触に
よる粗面化は表面結晶化が起こり信頼性を損うと
されてきたが、As2Se3感光体に於いては、ガラ
ス転移点が高く、異物接触に対して抵抗力がある
ので光導電層表面を、例えば円筒研削、超仕上げ
加工等により直接表面加工して粗面化することが
できる。但し、光導電層表面を直接加工する方法
は、表面構造に変化が起こり電荷の保持率が悪く
電荷がのらなくなるなど、静電特性上好ましくな
い。また、導電性基体の表面を円筒研削、液体ホ
ーニング等により粗面とし、光導電層形成過程の
条件を、例えばSe系感光体において蒸着時の基
体温度をガラス転移点以下にするなどのように適
当に設定することにより、光導電層表面を粗面化
する方法がある。この方法は、静電特性上は問題
ないが基体の表面に安定した粗面が得られないの
で、この方法でも光導電層表面に安定した粗面を
形成することが難しい。
Recently, it has been found that it is more effective for the surface of the photoreceptor to be roughened to some extent in order to overcome the above-mentioned drawbacks. Although there are several proposals for roughening the surface of the photoconductive layer by adding fine irregularities to the surface, none of them have been put to practical use due to industrial difficulties. Particularly in the process of forming a photoconductive layer, it is difficult with conventional vapor deposition methods to moderately roughen the surface of the photoconductive layer made of a fluid photoconductive material such as Se-based material. It has been believed that surface roughening due to adhesion of foreign matter or contact with foreign matter during or after the formation of the photoconductive layer causes surface crystallization, which impairs reliability, but As 2 Se 3 photoreceptors have a high glass transition point. Since it is resistant to foreign matter contact, the surface of the photoconductive layer can be roughened by direct surface processing, for example, by cylindrical grinding, superfinishing, or the like. However, the method of directly processing the surface of the photoconductive layer is unfavorable in terms of electrostatic properties, such as changes in the surface structure resulting in poor charge retention and no charge being carried. In addition, the surface of the conductive substrate is made rough by cylindrical grinding, liquid honing, etc., and the conditions for the photoconductive layer formation process are adjusted such that the temperature of the substrate during vapor deposition is below the glass transition point for Se-based photoreceptors. There is a method of roughening the surface of the photoconductive layer by making appropriate settings. Although this method has no problem in terms of electrostatic properties, it is difficult to form a stable rough surface on the surface of the photoconductive layer because it does not provide a stable rough surface on the surface of the substrate.

〔発明の目的〕[Purpose of the invention]

本発明はこれに対し、トナーの転写性、転写紙
の分離性、クリーニング性の向上のために光導電
層表面が粗面化された感光体を、静電特性を害す
ることなく安定して形成できる電子写真用感光体
の製造方法を提供することを目的とする。
In order to improve toner transfer performance, transfer paper separation performance, and cleaning performance, the present invention can stably form a photoreceptor with a roughened photoconductive layer surface without impairing electrostatic properties. An object of the present invention is to provide a method for manufacturing an electrophotographic photoreceptor that can be produced.

〔発明の要点〕[Key points of the invention]

本発明は導電性基体表面にセレン系材料からな
る第1の光導電層を蒸着する工程とこの工程によ
り形成された第1の光導電層の表面を粗面化する
工程と、粗面化された第1の光導電層の表面に同
様にセレン系材料からなる第2の光導電層を蒸着
する工程とにより感光体を製造するものである。
The present invention comprises a step of vapor depositing a first photoconductive layer made of a selenium-based material on the surface of a conductive substrate, a step of roughening the surface of the first photoconductive layer formed by this step, and a step of roughening the surface of the first photoconductive layer formed by this step. A photoreceptor is manufactured by a step of similarly vapor depositing a second photoconductive layer made of a selenium-based material on the surface of the first photoconductive layer.

一般にSe又はSe合金はガラス転移点Tg近傍で
粘性が急変し流動性が変動する。即ちTg近傍も
しくはそれより上の温度では流動性が増大し、
Tgより下では流動性が低減する。無定形Se又は
Se合金による光導電層の形成は、真空蒸着法に
より行なわれるが、蒸着時に設定される基体温度
により基体上での上記のSeまたはSe合金の流動
性を変えることができる。
Generally, the viscosity of Se or Se alloy changes suddenly near the glass transition point Tg, and the fluidity fluctuates. In other words, at temperatures near or above Tg, fluidity increases,
Below Tg, fluidity decreases. Amorphous Se or
Formation of the photoconductive layer using the Se alloy is carried out by a vacuum evaporation method, and the fluidity of the Se or Se alloy on the substrate can be changed by the substrate temperature set at the time of vapor deposition.

本発明は、上述の性質を利用し一層目の光導電
層を従来通りの方法で蒸着により形成し、この一
層目の光導電層の表面を粗面化し、この粗面が層
表面に出るよう二層目の光導電層をTg以下の温
度で蒸着により形成するのである。
The present invention utilizes the above-mentioned properties to form a first photoconductive layer by vapor deposition using a conventional method, and roughens the surface of this first photoconductive layer so that the rough surface appears on the layer surface. The second photoconductive layer is formed by vapor deposition at a temperature below Tg.

〔発明の実施例〕[Embodiments of the invention]

第1図は本発明の実施例の感光体の断面を示
す。1はAl,Fe,Cu等の金属または合金からな
る導電性基体であり、その表面は円筒研削、液体
ホーニング等で表面加工するが限定した粗度にす
る必要はない。この基体1上にセレン又はセレン
合金からなる第一の光導電層2を蒸着し、その表
面を円筒研削、液体ホーニング等で表面加工し粗
面化する。さらにその上にAs2Se3からなる第二
の光導電層3をAs2Se3のガラス転移点以下の温
度で蒸着することによりその表面に粗面4を形成
する。
FIG. 1 shows a cross section of a photoreceptor according to an embodiment of the present invention. Reference numeral 1 denotes a conductive substrate made of metal or alloy such as Al, Fe, Cu, etc., and its surface is processed by cylindrical grinding, liquid honing, etc., but it is not necessary to have a limited roughness. A first photoconductive layer 2 made of selenium or a selenium alloy is deposited on this substrate 1, and its surface is roughened by surface processing such as cylindrical grinding or liquid honing. Furthermore, a second photoconductive layer 3 made of As 2 Se 3 is deposited thereon at a temperature below the glass transition point of As 2 Se 3 to form a rough surface 4 on its surface.

実施例 1: 導電性基体1の表面を円筒研削により加工し、
基体1の温度を230℃に保つて、60μmの厚さに
As2Se3を蒸着する。このようにして得られた感
光体の第1の光導電層2の表面を超仕上げ加工に
より粗面化する。光導電層2の表面は#2000の砥
石にて0.1〜0.5μmの粗さにされた。このままで
は、静電特性上、従来品と比較して電荷の保持率
が50%以下であり電荷をのせられないので実用上
好ましくない。さらに同じ蒸発源を用い、基体1
の温度を150℃に保つて、1〜5μmの厚さに蒸着
し、第2の光導電層3を形成したところその表面
に粗さ0.1〜0.4μmの粗面を得ることができた。
Example 1: The surface of the conductive substrate 1 was processed by cylindrical grinding,
The temperature of substrate 1 was kept at 230℃ and the thickness was 60μm.
Deposit As2Se3 . The surface of the first photoconductive layer 2 of the photoreceptor thus obtained is roughened by superfinishing. The surface of the photoconductive layer 2 was roughened to a roughness of 0.1 to 0.5 μm using a #2000 grindstone. In this state, due to electrostatic properties, the charge retention rate is less than 50% compared to conventional products, and it is not practical to carry charge. Furthermore, using the same evaporation source, the substrate 1
When the second photoconductive layer 3 was formed by vapor deposition to a thickness of 1 to 5 .mu.m while maintaining the temperature at 150.degree. C., a rough surface with a roughness of 0.1 to 0.4 .mu.m could be obtained on the surface.

実施例 2: 導電性基体1の表面を円筒研削により加工し基
体1の温度を150℃に保つて、As2Se3層1を厚さ
60μmに蒸着し、得られた光導電層表面を超仕上
げ加工により粗面加工した。光導電層1の表面は
#2000の砥石により0.1〜0.5μmの粗さにして、
さらにAs2Se3を基体1の温度を150℃に保つて1
〜5μm蒸着したところ、その表面が0.1〜0.4μm
の粗さに粗された第2の光導電層3を得ることが
できた。
Example 2: The surface of the conductive substrate 1 was processed by cylindrical grinding, the temperature of the substrate 1 was maintained at 150°C, and the thickness of the As 2 Se 3 layer 1 was
The photoconductive layer was deposited to a thickness of 60 μm, and the surface of the resulting photoconductive layer was roughened by superfinishing. The surface of the photoconductive layer 1 was roughened to a roughness of 0.1 to 0.5 μm using a #2000 grindstone.
Furthermore, As 2 Se 3 was added to substrate 1 while keeping the temperature of substrate 1 at 150℃.
When ~5μm was deposited, the surface was 0.1~0.4μm
It was possible to obtain a second photoconductive layer 3 roughened to a roughness of .

実施例1,2によつて得られた感光体の静電特
性は従来品と同等で画像品質が良く、画像上白す
じとなる欠陥も発生しなかつた。そして表面が粗
面化された感光層が得られたのでトナーの転写
性、転写紙の分離性、クリーニング性が良好にな
つた。
The electrostatic properties of the photoreceptors obtained in Examples 1 and 2 were comparable to those of conventional products, the image quality was good, and no defects such as white streaks occurred on the images. Since a photosensitive layer with a roughened surface was obtained, toner transfer properties, transfer paper separation properties, and cleaning properties were improved.

一層目を粗面化する方法は、砥石による超仕上
げ加工(SF)によるほかに砥石を回転させなが
らドラムを廻して研摩する方法、砥石の代わりに
エメリーペーパー、研摩布等を使用する方法等に
よつてもよい。又、画像上に加工痕が出にくい梨
地仕上げを得ることのできる液体ホーニングも有
効である。
Methods for roughening the first layer include super finishing (SF) using a grindstone, polishing by rotating a drum while rotating the grindstone, and using emery paper, polishing cloth, etc. in place of the grindstone. You can read it. Liquid honing is also effective because it can provide a matte finish that does not easily leave processing marks on the image.

感光層(第2光電導層)の表面に表われる凹凸
は、粗さ0.1〜2μmの範囲が使用され、特に0.1〜
1μmの範囲にするのが望ましく、また表面方向
にはその凹凸の幅が使用トナーの粒径より小さい
ことが有効である。これより凹凸が大きい場合
は、スポツト状の帯電ムラが生じ画像上の欠陥と
なる。またクリーニング用のブレードに傷が入
り、ブレードの寿命を短かくする。凹凸が小さい
場合は、所望のクリーニング性が得られなくな
る。
The irregularities appearing on the surface of the photosensitive layer (second photoconductive layer) have a roughness in the range of 0.1 to 2 μm, particularly 0.1 to 2 μm.
A range of 1 μm is desirable, and it is effective that the width of the unevenness in the surface direction is smaller than the particle size of the toner used. If the unevenness is larger than this, spot-like charging unevenness will occur, resulting in a defect on the image. Also, the cleaning blade gets scratched, shortening its lifespan. If the unevenness is small, desired cleaning performance cannot be obtained.

第2の光導電層形成過程に於いて基体の温度
は、前述したように感光層の表面を大きく左右す
るので適切な範囲に設定する必要がある。感光層
の表面粗面化を可能とする基体の温度はAs2Se3
を光導電材として用いる場合は通常180℃以下で
あり、特に100〜170℃が適当である。また、第2
の光導電層の蒸着厚は、これをあまり大く選ぶ
と、その表面が平滑化され、小さく選ぶと粗面の
粗さが大きくなるので、粗さが上記の範囲となる
ように調節する必要がある。
In the process of forming the second photoconductive layer, the temperature of the substrate greatly influences the surface of the photosensitive layer, as described above, and therefore needs to be set within an appropriate range. The temperature of the substrate that makes it possible to roughen the surface of the photosensitive layer is As 2 Se 3
When used as a photoconductive material, the temperature is usually 180°C or lower, particularly 100 to 170°C. Also, the second
If the deposition thickness of the photoconductive layer is selected to be too large, the surface will be smoothed, and if it is selected to be too small, the roughness of the surface will become large, so it is necessary to adjust the roughness so that it falls within the above range. There is.

〔発明の効果〕〔Effect of the invention〕

本発明は導電性基体上に形成した第一の光導電
層の表面を機械的に加工して粗面化し、この粗面
化した光導電層の上に基体温度を蒸着する光導電
材のガラス転移点以下にして第2の光導電層を蒸
着により形成して表面に粗面を有する電子写真用
感光体を得るもので、これによりトナーの転写
性、転写紙の分離性、クリーニング性の良好でか
つ画像品質の良好な電子写真用感光体を安定して
製造することが可能となつたので得られる効果は
極めて大きい。
The present invention involves mechanically processing the surface of a first photoconductive layer formed on a conductive substrate to make it rough, and depositing the substrate temperature on the roughened photoconductive layer to achieve a glass transition of the photoconductive material. A second photoconductive layer is formed by vapor deposition to obtain a photoreceptor for electrophotography having a rough surface. Moreover, it has become possible to stably produce an electrophotographic photoreceptor with good image quality, so the effects obtained are extremely large.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例による電子写真用感
光体の部分断面図である。 1…導電性基体、2…第一光導電層、3…
As2Se3層、4…粗面。
FIG. 1 is a partial sectional view of an electrophotographic photoreceptor according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Conductive substrate, 2... First photoconductive layer, 3...
As 2 Se 3 layers, 4...Rough surface.

Claims (1)

【特許請求の範囲】[Claims] 1 導電性基体表面にセレン・ヒ素合金よりなる
第1の光導電層を蒸着し、つぎにこの表面を粗面
加工したのち、その上に第2の光導電層を、その
表面粗さが0.1〜2.0μmになるようなセレン・ヒ
素合金のガラス転移温度以下の所定温度に前記基
体を保持しながら1〜5μmの厚さに蒸着するこ
とを特徴とする電子写真用感光体の製造方法。
1. A first photoconductive layer made of a selenium-arsenic alloy is deposited on the surface of a conductive substrate, and then this surface is roughened, and then a second photoconductive layer is placed on top of it, with a surface roughness of 0.1. A method for producing an electrophotographic photoreceptor, which comprises depositing the substrate to a thickness of 1 to 5 μm while maintaining the substrate at a predetermined temperature below the glass transition temperature of a selenium-arsenic alloy such that the thickness of the selenium-arsenic alloy becomes 2.0 μm.
JP14341383A 1983-08-05 1983-08-05 Manufacture of electrophotographic sensitive body Granted JPS6033562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14341383A JPS6033562A (en) 1983-08-05 1983-08-05 Manufacture of electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14341383A JPS6033562A (en) 1983-08-05 1983-08-05 Manufacture of electrophotographic sensitive body

Publications (2)

Publication Number Publication Date
JPS6033562A JPS6033562A (en) 1985-02-20
JPH0217020B2 true JPH0217020B2 (en) 1990-04-19

Family

ID=15338187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14341383A Granted JPS6033562A (en) 1983-08-05 1983-08-05 Manufacture of electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS6033562A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61238060A (en) * 1985-04-16 1986-10-23 Canon Inc Electrophotographic photoreceptor and its image forming method
JPS6223049A (en) * 1985-07-24 1987-01-31 Fuji Electric Co Ltd Electrophotographic sensitive body
MD341Z (en) * 2010-07-30 2011-09-30 Институт Прикладной Физики Академии Наук Молдовы Method for manufacturing relief holographic diffraction gratings

Also Published As

Publication number Publication date
JPS6033562A (en) 1985-02-20

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