JPH0217517B2 - - Google Patents

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Publication number
JPH0217517B2
JPH0217517B2 JP59211500A JP21150084A JPH0217517B2 JP H0217517 B2 JPH0217517 B2 JP H0217517B2 JP 59211500 A JP59211500 A JP 59211500A JP 21150084 A JP21150084 A JP 21150084A JP H0217517 B2 JPH0217517 B2 JP H0217517B2
Authority
JP
Japan
Prior art keywords
ferrite
polycrystalline
crystal
single crystal
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59211500A
Other languages
Japanese (ja)
Other versions
JPS6191091A (en
Inventor
Hidetoshi Isaji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP59211500A priority Critical patent/JPS6191091A/en
Publication of JPS6191091A publication Critical patent/JPS6191091A/en
Publication of JPH0217517B2 publication Critical patent/JPH0217517B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

(産業上の利用分野) 本発明は、多結晶フエライトと単結晶フエライ
トとを接触加熱し、単結晶フエライトを多結晶フ
エライト方向に結晶成長させて単結晶フエライト
を育成するフエライト単結晶の製造法であり、さ
らに詳しくは単結晶中の含有気孔の少ないフエラ
イト単結晶の製造法に関するものである。 (従来の技術) 従来、単結晶フエライトの製造法としては、原
料を溶融点以上の高温で溶融した液相より単結晶
を育成するブリツヂマン法が知られている。しか
しながら、ブリツヂマン法では大型の製造装置を
必要とし、量産性に乏しく、従つて得られる単結
晶フエライト製品が高価となる欠点があつた。 上述した欠点を解消するために、本願人は特開
昭56−155100号公報において、多結晶フエライト
と単結晶フエライトとを接触させ、加熱すること
により単結晶フエライトを多結晶フエライト方向
に結晶成長させて単結晶フエライトを育成する単
結晶フエライトの製造に際し、特に多結晶フエラ
イトとしてスピネル構造を有する酸化鉄および/
又はスピネル構造の履歴を有する酸化鉄をFe2O3
に換算して60重量%以上含有する酸化鉄を使用し
て製造した多結晶フエライトを用い、さらに多結
晶フエライトの不連続な結晶粒子成長の起る温度
未満の温度に加熱する単結晶フエライトの製造法
を開示している。 (発明が解決しようとする問題点) 上述した温度フエライトの製造法においては、
確かに安価かつ大量に単結晶製品が得られるが、
単結晶フエライト中に5〜10μmという大きな気
孔が残留することがあり、気孔の大きい部分は
VTR磁気ヘツドには使用できないと共に収率が
極めて低い欠点があつた。 本発明の目的は、上述した欠点を解消し、フエ
ライト単結晶中に発生する比較的大きな5μm以上
の気孔の出現を抑制し、製品収率を良好にすると
共に安価にフエライト単結晶を得ることができる
製造法を提供しようとするものである。 (問題点を解決するための手段) 本発明のフエライト単結晶の製造法は、多結晶
フエライトと単結晶フエライトとを接触加熱し、
単結晶フエライトを多結晶フエライト方向に結晶
成長させて単結晶フエライトを育成するフエライ
ト単結晶の製造法において、Fe2O3,MnO,ZnO
等よりなる多結晶フエライト形成混合物を仮焼す
ると共に、仮焼後のフエライト粉末中の硫黄含有
量を40ppm以下とし、多結晶フエライト粉砕物の
平均粒子径を1.0〜2.0μmに調整した後、成形焼成
して得た多結晶フエライトを使用することを特徴
とするものである。 (作 用) 第1図は本発明の製造法を説明するためのフロ
ーチヤートである。マグネタイト(Fe3O4)を履
歴したSの含有量が1.5%以下のFe2O3とMnO,
ZnO等を所定の割合に混合し、この混合物を仮焼
後湿式微粉砕する。得られたフエライト微粉砕物
の平均粒子径は1.0〜2.0μm、好ましくは1.2〜
1.8μmに調整すると共に、Fe2O3中に含まれるS
残留含有量を洗浄や焼成条件等を調整することに
より1.5%以下とし、フエライト粉末中の硫黄残
留含有量を400ppm以下とする。上述したように
調整したフエライト微粉砕物を成形後焼成し、多
結晶フエライト成形体を得る。次に、多結晶フエ
ライト成形体と予じめ準備した種単結晶フエライ
トの接合面を鏡面研磨した後、これら接合面間に
好ましくはHNO3を介在させて接合し、加熱す
る。この加熱は、多結晶フエライトの不連続な結
晶粒子成長の起る温度未満で行なう。これによ
り、接合面より単結晶フエライトが多結晶フエラ
イト方向に結晶成長して多結晶フエライトを単結
晶化し、単結晶フエライトを得ている。 本発明は、比較的大きい気孔の発生原因が、フ
エライト粉末の粒子径と密接な関連があり、さら
に原料フエライト粉末中に含有されるSまたはS
化合物にも関連があることを見い出してなされた
ものである。すなわち、第2図にフエライト粉末
中の平均粒子径およびS含有量とフエライト単結
晶中の5μm以上の気孔数の関係を示すように、平
均粒子径が大になるほど5μm以上の大気孔は減少
するが、1.8μm以上では成形における充填不良に
起因する気孔が逆に増大すること、またフエライ
ト粉末中のS量と大気孔の数は正相関を示すこと
がわかつた。以上のことにより経済的効果も考慮
して、平均粒子径を1.0〜2.0μmに限定し、さらに
フエライト粉末中のSまたはS化合物の含有量を
Sとして40ppm以下に限定した。また、フエライ
ト粉末中のSまたはS化合物の含有量は、原料に
不純物として含有されるS化合物に左右されるた
め、フエライト粉末中のS量を40ppm以下にする
ことができる範囲として、原料として使用する
Fe2O3中の残留S含有量を.5%以下と限定し
た。なお、上述した数値限定範囲外では、5μm以
上の大気孔を平均値で1個以下とすることは困難
であつた。 (実施例) 湿式法で製造され不純物として硫黄0.9%を含
有した酸化鉄(Fe2O398.5%)を温湯で洗浄し、
硫黄含有量の異なる3種類(0.3%,0.5%,0.9
%)の酸化鉄、純度99.9%の酸化マンガン及び純
度99.9%の酸化亜鉛を原料とし、その組成が
Fe2O352.5モル%、MnO28モル%、ZnO19.5モル
%となるように混合した調合物を仮焼し、硫黄含
有量の異なる3種類の仮焼物を得た。 これら三種類の仮焼物を粗砕後、各々さらに三
等分し、5のボールミルで10H,15H,20Hの
微粉砕をして、計九種類のフエライト粉末を作成
し、成形ののち、平衡酸素分圧下で1320℃で4時
間の焼結をして9種類の母多結晶フエライトを得
た。 一方、これら3種類の多結晶フエライトとほぼ
同一の組成を有する高圧ブリツジマン法で製造さ
れた単結晶フエライトを用意した。これら母多結
晶フエライトと単結晶フエライトをそれぞれ10×
30×5mmと10×30×0.5mmのブロツクに切り出し、
その接合面をダイヤモンド砥粒で鏡面研磨したの
ち、6NのHNO3を塗布し、密着、乾燥させて接
合した。接合した母多結晶フエライトと単結晶フ
エライトを調整雰囲気下、1340℃で3時間加熱
し、単結晶フエライトを多結晶フエライト方向へ
結晶成長させ、単結晶フエライトを得た。 本発明の目的とする5μm以上の気孔の数を調査
するため、得られた単結晶フエライトから5×10
×5mmの小片を切り出しその一面をダイアモンド
砥粒で鏡面研磨したのち、光学顕微鏡を使用し倍
率1000倍で1mm2の範囲内に存在する5μm以上の気
孔を目視で数えて観察した。その結果は第1表に
示す通りである。なお、平均粒子径は公知の空気
透過法によつて測定した結果である。
(Industrial Application Field) The present invention is a method for producing a ferrite single crystal, in which polycrystalline ferrite and single-crystal ferrite are contacted and heated, and single-crystal ferrite is grown in the direction of polycrystalline ferrite to grow single-crystal ferrite. More specifically, it relates to a method for producing a ferrite single crystal containing few pores in the single crystal. (Prior Art) Conventionally, as a method for producing single crystal ferrite, the Bridgeman method is known in which a single crystal is grown from a liquid phase obtained by melting raw materials at a high temperature equal to or higher than the melting point. However, the Bridgman method requires large-scale manufacturing equipment, is not suitable for mass production, and has the disadvantage that the resulting single-crystal ferrite products are expensive. In order to eliminate the above-mentioned drawbacks, the applicant disclosed in Japanese Patent Application Laid-Open No. 155100/1983 that polycrystalline ferrite and single-crystal ferrite are brought into contact with each other, and by heating the single-crystal ferrite is grown in the direction of the polycrystalline ferrite. When producing single crystal ferrite, especially iron oxide and/or iron oxide having a spinel structure are used as polycrystalline ferrite.
Or iron oxide with a history of spinel structure as Fe 2 O 3
Production of single-crystal ferrite using polycrystalline ferrite produced using iron oxide containing 60% by weight or more in terms of iron oxide, and further heating it to a temperature below the temperature at which discontinuous crystal grain growth of polycrystalline ferrite occurs. Discloses the law. (Problems to be solved by the invention) In the above-mentioned method for producing temperature ferrite,
Although it is true that single crystal products can be obtained cheaply and in large quantities,
Large pores of 5 to 10 μm may remain in single crystal ferrite, and the large pores are
The drawback was that it could not be used in VTR magnetic heads and the yield was extremely low. The purpose of the present invention is to eliminate the above-mentioned drawbacks, suppress the appearance of relatively large pores of 5 μm or more that occur in ferrite single crystals, improve product yield, and obtain ferrite single crystals at low cost. The aim is to provide a manufacturing method that can. (Means for Solving the Problems) The method for producing a ferrite single crystal of the present invention includes contact heating of polycrystalline ferrite and single crystal ferrite,
In the manufacturing method of single crystal ferrite, which grows single crystal ferrite by growing single crystal ferrite in the direction of polycrystalline ferrite, Fe 2 O 3 , MnO, ZnO
After calcining the polycrystalline ferrite-forming mixture consisting of the following, the sulfur content in the ferrite powder after calcining was adjusted to 40 ppm or less, and the average particle size of the polycrystalline ferrite powder was adjusted to 1.0 to 2.0 μm, and then molded. It is characterized by using polycrystalline ferrite obtained by firing. (Function) FIG. 1 is a flowchart for explaining the manufacturing method of the present invention. Fe 2 O 3 and MnO with an S content of 1.5% or less, which have a history of magnetite (Fe 3 O 4 ),
ZnO and the like are mixed in a predetermined ratio, and this mixture is calcined and wet-pulverized. The average particle diameter of the obtained finely ground ferrite is 1.0 to 2.0 μm, preferably 1.2 to 2.0 μm.
In addition to adjusting the diameter to 1.8 μm, S contained in Fe 2 O 3
Reduce the residual content to 1.5% or less by adjusting cleaning and firing conditions, etc., and reduce the residual sulfur content in the ferrite powder to 400ppm or less. The finely ground ferrite prepared as described above is molded and then fired to obtain a polycrystalline ferrite molded body. Next, after mirror-polishing the joint surfaces of the polycrystalline ferrite molded body and the seed single crystal ferrite prepared in advance, the joint surfaces are preferably joined with HNO 3 interposed between them and heated. This heating is carried out below the temperature at which discontinuous grain growth of the polycrystalline ferrite occurs. As a result, the single crystal ferrite grows from the joint surface in the direction of the polycrystalline ferrite, converting the polycrystalline ferrite into a single crystal, thereby obtaining single crystal ferrite. The present invention shows that the cause of relatively large pores is closely related to the particle size of the ferrite powder, and that the S or S contained in the raw material ferrite powder is closely related to the particle size of the ferrite powder.
This was done after discovering that compounds are also related. In other words, as shown in Figure 2, which shows the relationship between the average particle diameter and S content in ferrite powder and the number of pores of 5 μm or more in a ferrite single crystal, the larger the average particle diameter becomes, the fewer the large pores of 5 μm or more decrease. However, it was found that the number of pores caused by poor filling during molding increases when the diameter is 1.8 μm or more, and that the amount of S in the ferrite powder and the number of large pores show a positive correlation. Considering the above-mentioned economic effects, the average particle diameter was limited to 1.0 to 2.0 μm, and the content of S or S compound in the ferrite powder was limited to 40 ppm or less as S. In addition, the content of S or S compounds in ferrite powder depends on the S compound contained as an impurity in the raw material, so it is used as a raw material within a range that can reduce the amount of S in ferrite powder to 40 ppm or less. do
Residual S content in Fe 2 O 3 . It was limited to 5% or less. In addition, outside the above-mentioned numerical limitation range, it was difficult to reduce the average value of large pores of 5 μm or more to one or less. (Example) Iron oxide (Fe 2 O 3 98.5%) produced by a wet method and containing 0.9% sulfur as an impurity was washed with hot water,
Three types with different sulfur content (0.3%, 0.5%, 0.9
%) iron oxide, 99.9% pure manganese oxide, and 99.9% pure zinc oxide as raw materials.
A mixture of 52.5 mol % Fe 2 O 3 , 28 mol % MnO, and 19.5 mol % ZnO was calcined to obtain three types of calcined products with different sulfur contents. After coarsely crushing these three types of calcined products, each was further divided into three equal parts, and finely pulverized in a ball mill of 5 for 10H, 15H, and 20H to create a total of nine types of ferrite powders. After molding, equilibrium oxygen Nine types of mother polycrystalline ferrites were obtained by sintering at 1320°C for 4 hours under partial pressure. On the other hand, single-crystal ferrite produced by the high-pressure Bridgeman method and having almost the same composition as these three types of polycrystal ferrite was prepared. These mother polycrystalline ferrite and single crystalline ferrite are each 10×
Cut into blocks of 30 x 5 mm and 10 x 30 x 0.5 mm,
After mirror-polishing the joint surfaces with diamond abrasive grains, 6N HNO 3 was applied, and the joints were bonded by adhesion and drying. The bonded mother polycrystalline ferrite and single-crystalline ferrite were heated at 1340° C. for 3 hours in a controlled atmosphere to cause crystal growth of the single-crystalline ferrite in the direction of the polycrystalline ferrite, thereby obtaining single-crystalline ferrite. In order to investigate the number of pores of 5 μm or more, which is the objective of the present invention, 5 × 10
A small piece of 5 mm in size was cut out, one side of the piece was mirror-polished with diamond abrasive grains, and then pores of 5 μm or more present within a 1 mm 2 area were visually counted and observed using an optical microscope at 1000x magnification. The results are shown in Table 1. Note that the average particle diameter is the result of measurement by a known air permeation method.

【表】 (発明の効果) 以上詳細に説明したところから明らかなよう
に、本発明のフエライト単結晶の製造法によれ
ば、フエライト微粉砕物の平均粒子径を1.0〜
2.0μmの範囲に微粉砕すること、および好ましく
は微粉砕物中のS含有量を40ppm以下に調整する
ことにより、5μm以上の大きな気孔の出現を抑制
した品質のよい単結晶フエライトを収率よく得る
ことができる。さらに、従来必要であつた気孔数
の検査等を省略ることができるため、工程数の減
少、工程期間の短縮が可能となる。 本発明によれば、品質のよいFe2O3―MnO―
ZnO系の単結晶フエライトが得られるので、
VTR用磁気ヘツドに使用できると共にノイズの
少ない単結晶フエライトが得られるので、各種磁
気ヘツドに有効に使用できる。
[Table] (Effects of the invention) As is clear from the detailed explanation above, according to the method for producing a ferrite single crystal of the present invention, the average particle diameter of the finely ground ferrite is 1.0 to 1.
By finely pulverizing the ferrite to a size in the range of 2.0 μm and preferably adjusting the S content in the pulverized material to 40 ppm or less, high-quality single crystal ferrite with suppressed appearance of large pores of 5 μm or more can be produced in a high yield. Obtainable. Furthermore, since inspection of the number of pores, etc., which were conventionally necessary, can be omitted, the number of steps and process period can be reduced. According to the present invention, high quality Fe 2 O 3 -MnO-
Since ZnO-based single crystal ferrite can be obtained,
Since a single crystal ferrite which can be used in magnetic heads for VTRs and has low noise can be obtained, it can be effectively used in various magnetic heads.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の製造法を説明するためのフ
ローチヤート、第2図は、フエライト粉末中の平
均粒子径およびS含有量とフエライト単結晶中の
5μm以上の気孔数の関係を示すグラフである。
Figure 1 is a flowchart for explaining the manufacturing method of the present invention, and Figure 2 shows the average particle diameter and S content in ferrite powder and the ferrite single crystal.
It is a graph showing the relationship between the number of pores of 5 μm or more.

Claims (1)

【特許請求の範囲】 1 多結晶フエライトと単結晶フエライトとを接
触加熱し、単結晶フエライトを多結晶フエライト
方向に結晶成長させて単結晶フエライトを育成す
るフエライト単結晶の製造法において、 Fe2O3,MnO,ZnO等よりなる多結晶フエライ
ト形成混合物を仮焼すると共に、仮焼後のフエラ
イト粉末中の硫黄含有量を40ppm以下とし、微粉
砕工程において平均粒子径を1.0〜2.0μmに調整し
た後、成形焼成して得た多結晶体フエライトを使
用することを特徴とするフエライト単結晶の製造
法。 2 フエライト原料としてマグネタイト
(Fe3O4)を履歴しかつ残留硫黄含有量が1.5%以
下のFe2O3を使用することを特徴とする特許請求
の範囲第1項記載のフエライト単結晶の製造法。
[Scope of Claims] 1. A method for producing a ferrite single crystal in which polycrystalline ferrite and single-crystal ferrite are contacted and heated, and single-crystal ferrite is grown in the direction of polycrystalline ferrite to grow single-crystal ferrite, comprising : 3. A polycrystalline ferrite-forming mixture consisting of MnO, ZnO, etc. was calcined, and the sulfur content in the ferrite powder after calcining was reduced to 40 ppm or less, and the average particle size was adjusted to 1.0 to 2.0 μm in the pulverization process. A method for producing a ferrite single crystal, characterized in that a polycrystalline ferrite obtained by molding and firing is used. 2. Production of a ferrite single crystal according to claim 1, characterized in that Fe 2 O 3 with a history of magnetite (Fe 3 O 4 ) and a residual sulfur content of 1.5% or less is used as a ferrite raw material. Law.
JP59211500A 1984-10-11 1984-10-11 Production of ferrite single crystal Granted JPS6191091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59211500A JPS6191091A (en) 1984-10-11 1984-10-11 Production of ferrite single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59211500A JPS6191091A (en) 1984-10-11 1984-10-11 Production of ferrite single crystal

Publications (2)

Publication Number Publication Date
JPS6191091A JPS6191091A (en) 1986-05-09
JPH0217517B2 true JPH0217517B2 (en) 1990-04-20

Family

ID=16606968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59211500A Granted JPS6191091A (en) 1984-10-11 1984-10-11 Production of ferrite single crystal

Country Status (1)

Country Link
JP (1) JPS6191091A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05188U (en) * 1991-06-21 1993-01-08 株式会社パル Pachinko machine
JP2500188B2 (en) * 1993-02-08 1996-05-29 有限会社インターナショナルテクノロジイデザイン Cigarette butts processing equipment
US6048394A (en) * 1997-08-14 2000-04-11 Competitive Technologies Of Pa, Inc. Method for growing single crystals from polycrystalline precursors
US7208041B2 (en) 2000-02-23 2007-04-24 Ceracomp Co., Ltd. Method for single crystal growth of perovskite oxides
US8202364B2 (en) 2002-10-11 2012-06-19 Ceracomp Co., Ltd. Method for solid-state single crystal growth

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5921591A (en) * 1982-07-28 1984-02-03 Matsushita Electric Ind Co Ltd Manufacturing method of single crystal ferrite

Also Published As

Publication number Publication date
JPS6191091A (en) 1986-05-09

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