JPH02179765A - Thermal head substrate - Google Patents
Thermal head substrateInfo
- Publication number
- JPH02179765A JPH02179765A JP67489A JP67489A JPH02179765A JP H02179765 A JPH02179765 A JP H02179765A JP 67489 A JP67489 A JP 67489A JP 67489 A JP67489 A JP 67489A JP H02179765 A JPH02179765 A JP H02179765A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- thin film
- conductor
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 239000004020 conductor Substances 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims abstract description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 239000012528 membrane Substances 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 23
- 238000007639 printing Methods 0.000 abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052759 nickel Inorganic materials 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000000615 nonconductor Substances 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 13
- 238000007747 plating Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000007772 electroless plating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はサーマルヘッド基板に関し、特に発熱抵抗素子
および電極その他の接続配線がそれぞれ薄膜技術により
形成されるサーマルヘッド基板に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thermal head substrate, and more particularly to a thermal head substrate in which heating resistive elements, electrodes, and other connection wiring are formed by thin film technology.
第3図(a)および(b)はそれぞれ従来の薄膜サーマ
ルヘッド基板の部分平面図およびそのA−A’断面図で
ある。このように、従来のサーマルヘッド基板では、薄
膜発熱抵抗素子4に対する印字電流の供給は、アルミナ
基板1の一主面上に同一膜厚の導体膜で形成された薄膜
共通電極3aと薄膜個別電極3bとを介して行われる。FIGS. 3(a) and 3(b) are a partial plan view and a sectional view taken along the line AA' of a conventional thin film thermal head substrate, respectively. In this way, in the conventional thermal head substrate, the printing current is supplied to the thin film heating resistor element 4 through the thin film common electrode 3a and the thin film individual electrodes formed of a conductor film of the same thickness on one main surface of the alumina substrate 1. 3b.
ここで、2はアルミナ基板IFに設けられた薄膜抵抗層
で薄膜発熱抵抗素子4を形成する。Here, 2 is a thin film resistance layer provided on the alumina substrate IF and forms the thin film heating resistance element 4.
一般に、このサーマルヘッド基板はA4或いはB4のよ
うな大型サイズの用紙に印字を行う場合には、薄膜共通
電極3aに対して大電流を供給する必要があり、例えば
薄膜発熱抵抗素子4の抵抗値が250Ω程度のときは、
これらが充分発熱できるように最大20アンペア前後の
電流を供給する必要がある。このとき共通電極3aの両
側から電波を2分して供給するとしても、それぞれが約
10アンペアと大きいため、電極導体膜の抵抗値が問題
となる。電極導体膜の材質には、搭載部品とのポンディ
ング接続を考えて1通常アルミニウム(AIL )また
は金(Au)が用いられるので、第3図の従来例のよう
に、基板の一主面上だけに電極導体膜を形成する構造の
ものでは、共通部の幅を4 m m、導体膜厚を2gm
とした場合の8膜共通電極3aの長さ10cm当りの導
体抵抗値を計算すると、アルミニウム(An)a[比抵
抗p = 2.75X 10−8am]金(Au)膜[
比抵抗p = 2.4X 10−8am]において、
それぞれ344mΩ、 300mΩとなる。従って、
10アンペアの電流が流れたときの電圧降下は何れも3
V/10c鵬前後の値となり、薄膜発熱抵抗素子4への
印加電圧が基板の中央寄りになる程小さくなるので、中
央部程印字濃度が淡くなる傾向を生じる。このような印
字濃度ムラの欠点は、導体膜厚を10倍以上にすれば改
善できるが、成膜装置の設備能力上からみて経済的では
なく、容易には実現できない。Generally, when this thermal head substrate prints on large size paper such as A4 or B4, it is necessary to supply a large current to the thin film common electrode 3a. When is about 250Ω,
It is necessary to supply a maximum current of around 20 amperes so that these can generate sufficient heat. At this time, even if the radio waves are divided into two parts and supplied from both sides of the common electrode 3a, each part is as large as about 10 amperes, so the resistance value of the electrode conductor film becomes a problem. The material of the electrode conductor film is usually aluminum (AIL) or gold (Au) in consideration of bonding connections with mounted components. For those with a structure in which the electrode conductor film is formed only on the electrode, the width of the common part is 4 mm, and the conductor film thickness is 2 gm.
Calculating the conductor resistance value per 10 cm of length of the 8-film common electrode 3a in the case of
Specific resistance p = 2.4X 10-8 am],
They are 344mΩ and 300mΩ, respectively. Therefore,
The voltage drop when a current of 10 amperes flows is 3.
The value is around V/10c, and since the voltage applied to the thin film heating resistor element 4 becomes smaller as it approaches the center of the substrate, there is a tendency for the print density to become lighter toward the center. Such a drawback of uneven print density can be improved by increasing the conductor film thickness by ten times or more, but this is not economical in terms of the equipment capacity of the film forming apparatus and cannot be easily realized.
本発明の目的は、上記の情況に鑑み、従来問題とされた
基板中央寄りの印字濃度ムラの欠点を解決したサーマル
ヘッド基板を提供することである。In view of the above circumstances, an object of the present invention is to provide a thermal head substrate that solves the conventional problem of uneven print density near the center of the substrate.
本発明によれば、サーマルヘッド基板は、アルミナ基板
と、前記アルミナ基板の一主面上に列状に配置形成され
る薄膜発熱抵抗素子と、前記t11i膜発熱抵抗素子に
対する共通および個別の各電極導体膜とを含み、前記共
通の電極導体膜は前記アルミナ基板の一主面上に電極部
を形成するtJ膜膜体体部該薄膜導体部に端部の一方を
重ねて接続し他方を前記アルミナ基板の他の主面上にま
で延在せしめる厚膜導体部とから構成される。According to the present invention, the thermal head substrate includes an alumina substrate, thin film heating resistance elements arranged in a row on one main surface of the alumina substrate, and common and individual electrodes for the t11i film heating resistance elements. the common electrode conductor film includes a tJ film body forming an electrode portion on one main surface of the alumina substrate; one of its ends is overlapped and connected to the thin film conductor portion; The thick film conductor portion extends onto the other main surface of the alumina substrate.
本発明によれば、従来の薄膜共通電極に付加された良導
電体からなる厚膜導体部が共通電極の導体抵抗値を大幅
に下げ、印字位置による薄膜発熱抵抗素子への印加電圧
差を充分小さくするので、印字濃度が基板全面にわたり
均一化される。According to the present invention, the thick film conductor portion made of a good conductor added to the conventional thin film common electrode significantly lowers the conductor resistance value of the common electrode and sufficiently reduces the difference in voltage applied to the thin film heating resistor element depending on the printing position. Since it is made small, the printing density can be made uniform over the entire surface of the substrate.
次に本発明の実施例について、図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の一実施例を示すサーマルヘッド基板の
部分断面図である0本実施例によれば、サーマルヘッド
基板は、従来例と同様に、アルミナ基板lと、このアル
ミナ基板lの一主面上に列状配置される#!I発熱抵抗
素子4と、この薄膜発熱抵抗素子4に印字電流を直接供
給する薄膜共通電極3aおよび薄膜個別電極3bとを備
えると共に、更にこの薄膜共通電極3aに端部の一方を
重ね合わせ他方をアルミナ基板lの他の主面(裏面)に
まで延在させて実効的に薄膜共通電極3aに対する低抵
抗電流通路を形成する銅(Cu)メツキ層5からなる厚
膜導体部を含んで構成される。ここで、6a、6bはそ
れぞれ銅メツキ層5を形成するための中間層の役目を果
たすニッケル(Xi)メツキ層である。FIG. 1 is a partial cross-sectional view of a thermal head substrate showing an embodiment of the present invention. According to this embodiment, the thermal head substrate includes an alumina substrate l and an alumina substrate l, as in the conventional example. # Arranged in rows on one main surface! It is equipped with an I heating resistor element 4, a thin film common electrode 3a and a thin film individual electrode 3b which directly supply a printing current to this thin film heating resistor element 4, and furthermore, one end of the thin film common electrode 3a is overlapped with the other end. It includes a thick film conductor section made of a copper (Cu) plating layer 5 that extends to the other main surface (back surface) of the alumina substrate l to effectively form a low resistance current path to the thin film common electrode 3a. Ru. Here, 6a and 6b are nickel (Xi) plating layers each serving as an intermediate layer for forming the copper plating layer 5.
本実施例の構造を得るのは極めて容易である。第2図(
a)〜(f)に製造方法の一手法を工程順に示す。It is extremely easy to obtain the structure of this example. Figure 2 (
A) to (f) show one method of the manufacturing method in order of steps.
まず、グ1/−ズドアルミナ基板lの上に薄膜抵抗層2
をスパッタリング法により1000^〜200OA厚に
形成し、ついでその上にアルミ(AM)導体N3を同じ
くスパッタリング法により約1.0ルm厚に形成する〔
第2図(a))、つぎに、この多層金属層に対し周知の
ホトレジスト技術によるバターニング工程を行う、すな
わち、アルミ(An)導体層3に対してはリン酸系のエ
ッチャントを用い、また、薄膜抵抗層2に対してはフッ
化水素酸と硝酸の混酸系エッチャントを用いてそれぞれ
を選択エツチングし、薄膜抵抗層2の一部を薄膜発熱抵
抗素子4に、アルミ(All )導体層3で薄膜共通電
極3aと薄膜個別電極3bを形成する(第2図(b))
、ついで、前工程のホトレジストを剥離除去した後、薄
膜共通電極3aの一部領域をホトレジストでマスキング
した後、公知の亜鉛置換法を利用した無電解メツキ法に
よりニッケル(旧)メツキ層6aを約1000〜200
0A厚に形成する〔第2図(C))、つづいて触媒化処
理法を用いてアルミナ基板1の側面および裏面の不導体
部分を活性化させた後、公知の無電解メツキ液へ浸漬し
て、ニッケル(Ni)メツキ層6aを側面および裏面に
まで生成させる〔第2図(d)〕 なお、この触媒化処
理法によるアルミナ基板l上ヘノニッケル(Xi)メツ
キは次の工程で行われるものである。First, a thin film resistor layer 2 is placed on a glued alumina substrate l.
is formed to a thickness of 1000~200 OA by sputtering method, and then an aluminum (AM) conductor N3 is formed thereon to a thickness of about 1.0 μm by sputtering method.
As shown in FIG. 2(a)), this multilayer metal layer is then subjected to a patterning process using a well-known photoresist technique. The thin film resistance layer 2 is selectively etched using a mixed acid etchant of hydrofluoric acid and nitric acid, and a part of the thin film resistance layer 2 is formed into a thin film heating resistance element 4 and an aluminum conductor layer 3 is formed. A thin film common electrode 3a and a thin film individual electrode 3b are formed (FIG. 2(b)).
Then, after peeling off the photoresist from the previous step and masking a partial area of the thin film common electrode 3a with photoresist, the nickel (old) plating layer 6a is approximately removed by an electroless plating method using a known zinc substitution method. 1000-200
The alumina substrate 1 is formed to a thickness of 0A (Fig. 2 (C)), and after activating the nonconducting portions on the side and back surfaces of the alumina substrate 1 using a catalytic treatment method, it is immersed in a known electroless plating solution. Then, a nickel (Ni) plating layer 6a is formed on the side and back surfaces [FIG. 2(d)]. The nickel (Xi) plating on the alumina substrate l by this catalytic treatment method is performed in the next step. It is.
脱脂→酸洗浄→センシタイジング→アクチベーション→
Ni無電解メツキ。Degreasing → Acid cleaning → Sensitizing → Activation →
Ni electroless plating.
つぎにこのNiメツキ層6a上に公知の電解メツキ法を
用いて銅(Cu)メツキ層5を 3〜lOpm厚に形成
する〔第2図(e))、ついで、この銅(Cu)メツキ
層5上に無電解メツキ法を用いてニッケル(Xi)層6
bを約1000〜200OA厚に被覆する〔第2図(f
))、最後にシリコン酸化膜(Si02)から成る耐摩
耗層7をスパッタリング法で約7uLm厚に形成し、つ
いで、従来のスクリーン印刷法を用いて薄膜共通電極3
aと個別電極3bおよびアルミナ基板lの側面と裏面部
をそれぞれ絶縁樹脂膜8でコーティングすれば、目的と
するサーマルヘッド基板を得る。Next, a copper (Cu) plating layer 5 is formed on this Ni plating layer 6a to a thickness of 3 to 1 Opm by using a known electrolytic plating method [FIG. 2(e)]. A nickel (Xi) layer 6 is formed on 5 using an electroless plating method.
b to a thickness of about 1000 to 200 OA [Fig. 2 (f
)) Finally, a wear-resistant layer 7 made of a silicon oxide film (Si02) is formed to a thickness of about 7 μLm by sputtering, and then a thin common electrode 3 is formed using a conventional screen printing method.
The desired thermal head substrate is obtained by coating the side surfaces and back surfaces of the individual electrodes a, the individual electrodes 3b, and the alumina substrate l with an insulating resin film 8, respectively.
本実施例におけるサーマルヘッド基板では、ニッケル(
旧)層6a、6bは、銅(Cu)メツキ層5を形成する
ための中間層の役目を果たしているもので、これにより
比抵抗が格段に小さな銅(Cu)材を用いた厚膜メツキ
が実現される。The thermal head board in this example uses nickel (
The old) layers 6a and 6b serve as intermediate layers for forming the copper (Cu) plating layer 5, and this allows thick film plating using a copper (Cu) material with a significantly lower resistivity. Realized.
以−L詳細に説明したように、本発明によれば薄膜発熱
抵抗素子に対し印字電流を直接供給する薄膜共通電極に
は、厚膜の銅(Cu)メツキ層が新たに接続され、共通
電極全面の抵抗値を低く抑えることができるので、サー
マルヘッド基板上の印字位置による発熱抵抗素子への印
加電圧値をきわめて均一化することが可能である。従っ
て、従来のサーマルヘッド基板に生じていた基板中央寄
りの印字濃度ムラを充分に改善できる効果がある。また
、アルミナ絶縁基板の側面と裏面を電極部の形成面とし
て利用しているので、−主面(表面)上に形成する薄膜
共通電極の導体幅を狭くすることが可能となる。従って
、サーマルヘッド基板の小型化を達成することも可能で
ある。As described in detail below, according to the present invention, a thick copper (Cu) plating layer is newly connected to the thin film common electrode that directly supplies printing current to the thin film heating resistor element, and the common electrode Since the resistance value of the entire surface can be kept low, it is possible to make the voltage applied to the heating resistor element extremely uniform depending on the printing position on the thermal head substrate. Therefore, it is possible to sufficiently improve the print density unevenness near the center of the substrate, which occurs in conventional thermal head substrates. Furthermore, since the side and back surfaces of the alumina insulating substrate are used as surfaces for forming the electrode portions, it is possible to narrow the conductor width of the thin film common electrode formed on the -main surface (front surface). Therefore, it is also possible to achieve miniaturization of the thermal head substrate.
第1図は本発明の一実施例を示すサーマルヘッド基板の
部分断面図、第2図(a)〜(f)は本発明サーマルヘ
ッド基板の製造方法の一手法を示す工程順序図、第3図
(a)および(b)はそれぞれ従来の薄膜サーマルヘッ
ド基板の部分平面図およびそのA−A’断面図である。
l・・・アルミナ基板、
2・・・薄膜抵抗層、
3・・・アルミ(A文)導体層。
3a・・・薄膜共通電極、
3b・・・薄膜個別電極、
4・・・薄膜発熱抵抗素子。
5・・・銅(Cu)メツキ層、
6a、6b・・・ニッケル(Xi)メツキ層、7・・・
耐摩耗層、
8・・・絶縁樹脂膜。FIG. 1 is a partial sectional view of a thermal head substrate showing an embodiment of the present invention, FIGS. Figures (a) and (b) are a partial plan view and an AA' cross-sectional view of a conventional thin film thermal head substrate, respectively. l...Alumina substrate, 2...Thin film resistance layer, 3...Aluminum (A pattern) conductor layer. 3a... Thin film common electrode, 3b... Thin film individual electrode, 4... Thin film heating resistor element. 5... Copper (Cu) plating layer, 6a, 6b... Nickel (Xi) plating layer, 7...
Wear-resistant layer, 8... Insulating resin film.
Claims (1)
に配置形成される薄膜発熱抵抗素子と、前記薄膜発熱抵
抗素子に対する共通および個別の各電極導体膜とを含み
、前記共通の電極導体膜は前記アルミナ基板の一主面上
に電極部を形成する薄膜導体部と該薄膜導体部に端部の
一方を重ねて接続し他方を前記アルミナ基板の他の主面
上にまで延在せしめる厚膜導体部とから構成されること
を特徴とするサーマルヘッド基板。an alumina substrate, thin film heating resistance elements arranged and formed in a row on one main surface of the alumina substrate, and common and individual electrode conductor films for the thin film heating resistance elements, the common electrode conductor film is a thin film conductor portion forming an electrode portion on one main surface of the alumina substrate, and a thickness that allows one of the end portions to be overlapped and connected to the thin film conductor portion and the other end extends onto the other main surface of the alumina substrate. A thermal head substrate comprising a membrane conductor section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP67489A JPH02179765A (en) | 1989-01-04 | 1989-01-04 | Thermal head substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP67489A JPH02179765A (en) | 1989-01-04 | 1989-01-04 | Thermal head substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02179765A true JPH02179765A (en) | 1990-07-12 |
Family
ID=11480293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP67489A Pending JPH02179765A (en) | 1989-01-04 | 1989-01-04 | Thermal head substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02179765A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995032867A1 (en) * | 1994-05-31 | 1995-12-07 | Rohm Co., Ltd. | Thermal printing head |
| WO1996041722A1 (en) * | 1995-06-13 | 1996-12-27 | Rohm Co., Ltd. | Method of forming auxiliary electrode layer for common electrode pattern in thermal head |
| JP2009522878A (en) * | 2005-12-29 | 2009-06-11 | エクスアテック、エル.エル.シー. | Antennas for plastic window panels |
-
1989
- 1989-01-04 JP JP67489A patent/JPH02179765A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995032867A1 (en) * | 1994-05-31 | 1995-12-07 | Rohm Co., Ltd. | Thermal printing head |
| US5680170A (en) * | 1994-05-31 | 1997-10-21 | Rohm Co. Ltd. | Thermal printhead |
| WO1996041722A1 (en) * | 1995-06-13 | 1996-12-27 | Rohm Co., Ltd. | Method of forming auxiliary electrode layer for common electrode pattern in thermal head |
| EP0775584A4 (en) * | 1995-06-13 | 1997-07-16 | Rohm Co Ltd | Method of forming auxiliary electrode layer for common electrode pattern in thermal head |
| US5979040A (en) * | 1995-06-13 | 1999-11-09 | Rohm Co., Ltd. | Method of making auxiliary electrode layer for common electrode pattern in thermal printhead |
| CN1070113C (en) * | 1995-06-13 | 2001-08-29 | 罗姆股份有限公司 | Method for forming auxiliary electrode layer of common electrode structure on thermal head |
| JP2009522878A (en) * | 2005-12-29 | 2009-06-11 | エクスアテック、エル.エル.シー. | Antennas for plastic window panels |
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