JPH0218567B2 - - Google Patents
Info
- Publication number
- JPH0218567B2 JPH0218567B2 JP12504282A JP12504282A JPH0218567B2 JP H0218567 B2 JPH0218567 B2 JP H0218567B2 JP 12504282 A JP12504282 A JP 12504282A JP 12504282 A JP12504282 A JP 12504282A JP H0218567 B2 JPH0218567 B2 JP H0218567B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- phosphorus
- magnetized film
- perpendicularly magnetized
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005291 magnetic effect Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 description 21
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 230000005415 magnetization Effects 0.000 description 6
- 229910001096 P alloy Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Landscapes
- Thin Magnetic Films (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】
近年、新しい高密度記録方式として、垂直磁気
記録方式と光磁気記録方式が注目され、そのため
の記録媒体として、垂直方向に磁気異方性を備え
た垂直磁化膜が開発され、特にCo−Cr系垂直磁
化膜が実用上優れて居り、これを基材面に析出さ
せた磁気記録体は公知である。然し乍ら、この磁
気記録体を製造するに、基材面に、蒸着法やマグ
ネトロン型の高速スパツタ法等の析出速度が数千
Å〜数μmm/minの析出速度でCo−Cr系磁化膜
を生成せしめる場合は、基材の温度を200℃付近
に加熱しないと垂直磁化膜が得られないことが分
つてきた。このことは、この製造法には、磁気テ
ープやフロツピーデイスク等として一般に用いら
れるポリエチレンテレフタレート(PET)など
の熱に弱い合成樹脂を基材として用いることがで
きない不利がある。工業生産規模からみて、基材
を加熱しないで、一般に、室温でCo−Cr系垂直
磁化膜を高速析出生成せしめ得ることが望まし
い。[Detailed Description of the Invention] In recent years, perpendicular magnetic recording and magneto-optical recording have attracted attention as new high-density recording methods, and perpendicular magnetization films with magnetic anisotropy in the perpendicular direction have been developed as recording media for these methods. Among these, a Co--Cr perpendicular magnetization film is particularly excellent in practical use, and magnetic recording bodies in which this film is deposited on a substrate surface are known. However, in order to manufacture this magnetic recording medium, a Co-Cr magnetized film is produced on the substrate surface at a deposition rate of several thousand Å to several μmm/min using a vapor deposition method or a magnetron-type high-speed sputtering method. It has been found that a perpendicularly magnetized film cannot be obtained unless the base material is heated to around 200°C. This means that this manufacturing method has the disadvantage that heat-sensitive synthetic resins such as polyethylene terephthalate (PET), which are commonly used in magnetic tapes, floppy disks, etc., cannot be used as the base material. From an industrial production scale, it is generally desirable to be able to rapidly deposit and generate a Co--Cr perpendicularly magnetized film at room temperature without heating the substrate.
本発明は、常温でもCo−Cr系垂直磁化膜をも
つ新規な磁気記録体を提供するもので、基材面上
のCo−Cr系垂直磁化膜にPが少量混入している
ことを特徴とする。 The present invention provides a novel magnetic recording medium having a Co-Cr perpendicularly magnetized film even at room temperature, and is characterized in that a small amount of P is mixed in the Co-Cr perpendicularly magnetized film on the substrate surface. do.
次に本発明の実施例を説明する。 Next, embodiments of the present invention will be described.
最も優れた垂直磁化特性を示すCo−20Wt%Cr
合金の板状等の材面にCo−P合金の小片を均一
に配置したものをターゲツトとし、通常のDCマ
グネトロンスパツタ法によりこれをスパツタリン
グし、PETのシートから成る常温の基材面に
6000Å/minの析出速度で析出させる。該基材面
は冷却されたホルダーに接着させてスパツタ中の
温度上昇を防止した。かくして、ポリエチレンテ
レフタレートの基材面に4000Åの厚さを有し4Wt
%程度Pの混入したCo−Cr垂直磁化膜が得られ
た。同様の製法で、但しPの混入量を種々変える
ため、Co−Crターゲツト上に配置されるCo−P
合金の小片の量を変えて各種混入量の各種のCo
−Cr析出生成膜をもつ製品を得た。比較のため、
前記のCo−P合金小片を配置しない従来のCo−
20wt%Cr合金のみをターゲツトとして同様にス
パツタして従来のCo−Cr磁化膜をもつ磁気記録
体を得た。 Co-20Wt%Cr exhibiting the best perpendicular magnetization characteristics
Small pieces of Co-P alloy are uniformly arranged on the surface of a material such as an alloy plate, and this is sputtered using the normal DC magnetron sputtering method, and then sputtered onto the base material surface of a PET sheet at room temperature.
Deposition is performed at a deposition rate of 6000 Å/min. The surface of the base material was adhered to a cooled holder to prevent temperature rise during sputtering. Thus, 4Wt with a thickness of 4000 Å on the substrate surface of polyethylene terephthalate
A Co--Cr perpendicularly magnetized film containing about 10% P was obtained. Co-P placed on the Co-Cr target using the same manufacturing method, but varying the amount of P mixed in.
Various amounts of Co mixed in by changing the amount of small pieces of alloy are mixed.
-A product with a Cr precipitation film was obtained. For comparison,
Conventional Co-P alloy without the aforementioned Co-P alloy pieces
A magnetic recording medium with a conventional Co--Cr magnetized film was obtained by sputtering using only a 20 wt% Cr alloy as a target.
これらのサンプルにつき、各種の磁気特性を測
定し、図示の如き結果を得た。 Various magnetic properties of these samples were measured, and the results shown in the figure were obtained.
該図から明らかなように、従来のりん無添加の
場合は、膜面に垂直方向の保磁力Hc⊥と平行方
向の保磁力Hcは、その夫々の特性曲線A及び
Bに示すように、殆んど同じで、垂直磁化膜にな
つていないが、りんを添加し、その添加量が増大
すると共にHc⊥は急激に増加し、Hc⊥/
Hcの値も増大し、その垂直磁化膜ができ且つ
増大する膜が得られることが分る。しかし乍ら、
Msの値は、その特性曲線Cに示すように、5.5%
付近で非強磁性となることが分つた。この結果、
垂直磁化膜としては、Pの添加量は、約5%以下
の少量にとゞめることが望ましい。 As is clear from the figure, in the conventional case without phosphorus addition, the coercive force Hc⊥ in the direction perpendicular to the film surface and the coercive force Hc in the parallel direction are almost the same, as shown in their respective characteristic curves A and B. It is almost the same, and it is not a perpendicularly magnetized film, but when phosphorus is added, as the amount of addition increases, Hc⊥ increases rapidly, and Hc⊥/
It can be seen that the value of Hc also increases, and a film with perpendicular magnetization is formed and the value of Hc increases. However,
The value of Ms is 5.5%, as shown in its characteristic curve C.
It was found that it becomes non-ferromagnetic in the vicinity. As a result,
As for the perpendicularly magnetized film, it is desirable to keep the amount of P added to a small amount of about 5% or less.
この垂直磁化膜の生成の原因は、次のように推
定される。即ち、りんが析出粒子の粒界に偏析す
るため、粒子が孤立することにより、単磁区粒子
となり、形状異方性が増大することや磁化過程が
磁壁移動から回転になることにより垂直方向の保
磁力を増大するためである。又りんが粒界に偏析
するのは、本来的にりんが偏析し易く、低温でも
拡散しやすい元素であることに加え、Crとの結
合がCoとの結合より大きいために、多少とも粒
界に偏析しているCr原子に伴なわれてりんも析
出するためと考えられる。 The cause of the formation of this perpendicularly magnetized film is estimated as follows. In other words, since phosphorus segregates at the grain boundaries of precipitated grains, the grains become isolated and become single-domain grains, which increases the shape anisotropy and changes the magnetization process from domain wall movement to rotation, resulting in the retention in the vertical direction. This is to increase magnetic force. The reason why phosphorus segregates at grain boundaries is that phosphorus inherently segregates easily and is an element that easily diffuses even at low temperatures, and its bond with Cr is larger than its bond with Co. This is thought to be because phosphorus also precipitates along with the Cr atoms that are segregated.
上記のP混入の材料としてP−Co合金に変え、
その他のりん合金でも良く、又固体に限らず、
PH3ガス等としてガス状物でもよく、この場合
は、Arガスと同時に真空処理容器内に導入する
方法でもよい。 Change the above P-mixed material to P-Co alloy,
Other phosphorus alloys may also be used, and they are not limited to solid materials.
A gaseous substance such as PH 3 gas may be used, and in this case, it may be introduced into the vacuum processing container at the same time as Ar gas.
又、上記のスパツタリング法の他、蒸着法、イ
オンプレーテイング法その他の適当な薄膜生成手
段が採用できる。Co−Cr系合金としては、Co−
Cr20wt%合金の他、従来使用されているCo−
Cr10〜30wt%合金、更にはこれにMo、W、Ti、
V、Rh等の金属を少量添加したものを含む。 In addition to the above-mentioned sputtering method, other suitable thin film forming methods such as vapor deposition method and ion plating method can be employed. As a Co-Cr alloy, Co-
In addition to the Cr20wt% alloy, the conventionally used Co-
Cr10~30wt% alloy, furthermore, Mo, W, Ti,
Contains those with small amounts of metals such as V and Rh added.
尚、基材の温度は、そのりんの少量添加によ
り、冷却しないでも差支えなく、200℃以下の比
較的低温の上昇でも垂直磁化膜が得られることが
分つた。勿論基材が耐熱性を有するものを使用
し、りんの混入した本発明のCo−Cr垂直磁化膜
をもつ磁気記録体を製造するようにする。 It has been found that by adding a small amount of phosphorus, the temperature of the substrate can be raised without cooling, and that a perpendicularly magnetized film can be obtained even when the temperature of the substrate is increased to a relatively low temperature of 200° C. or less. Of course, a heat-resistant base material is used to produce a magnetic recording body having the Co--Cr perpendicularly magnetized film of the present invention mixed with phosphorus.
本発明によるときは、りんを少量混入させるこ
とによりCo−Cr垂直磁化膜が得られ、基材とし
て耐熱性の劣る合成樹脂等の基材でも使用可能と
なり、大期模な大量生産に適した高速析出法によ
るCo−Cr系垂直磁化膜型磁気記録体が得られる
等の効果を有する。 According to the present invention, a Co-Cr perpendicular magnetization film can be obtained by mixing a small amount of phosphorus, and it can be used as a base material even with synthetic resins that have poor heat resistance, making it suitable for large-scale mass production. This method has effects such as the ability to obtain a Co-Cr-based perpendicularly magnetized film type magnetic recording material using a high-speed deposition method.
図面は本発明のCo−Cr垂直磁化膜の各種の磁
気特性とりん添加量との関係グラフである。
A……垂直方向保磁力の特性曲線、B……平行
方向保磁力の特性曲線、C……Ms特性曲線。
The drawing is a graph of the relationship between various magnetic properties of the Co--Cr perpendicularly magnetized film of the present invention and the amount of phosphorus added. A...Characteristic curve of perpendicular coercive force, B...Characteristic curve of parallel coercive force, C...Ms characteristic curve.
Claims (1)
混入していることを特徴とする磁気記録体。 2 Pの混入量は、約5Wt%以下である特許請求
の範囲1に記載の磁気記録体。[Scope of Claims] 1. A magnetic recording material characterized in that a small amount of P is mixed in a Co-Cr perpendicularly magnetized film on a substrate surface. 2. The magnetic recording medium according to claim 1, wherein the amount of P mixed is about 5 Wt% or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12504282A JPS5917215A (en) | 1982-07-20 | 1982-07-20 | Magnetic recorder and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12504282A JPS5917215A (en) | 1982-07-20 | 1982-07-20 | Magnetic recorder and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5917215A JPS5917215A (en) | 1984-01-28 |
| JPH0218567B2 true JPH0218567B2 (en) | 1990-04-26 |
Family
ID=14900394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12504282A Granted JPS5917215A (en) | 1982-07-20 | 1982-07-20 | Magnetic recorder and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5917215A (en) |
-
1982
- 1982-07-20 JP JP12504282A patent/JPS5917215A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5917215A (en) | 1984-01-28 |
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