JPH021859Y2 - - Google Patents

Info

Publication number
JPH021859Y2
JPH021859Y2 JP15839085U JP15839085U JPH021859Y2 JP H021859 Y2 JPH021859 Y2 JP H021859Y2 JP 15839085 U JP15839085 U JP 15839085U JP 15839085 U JP15839085 U JP 15839085U JP H021859 Y2 JPH021859 Y2 JP H021859Y2
Authority
JP
Japan
Prior art keywords
shroud
aluminum
stainless steel
cooling fluid
steel plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15839085U
Other languages
Japanese (ja)
Other versions
JPS6265828U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15839085U priority Critical patent/JPH021859Y2/ja
Publication of JPS6265828U publication Critical patent/JPS6265828U/ja
Application granted granted Critical
Publication of JPH021859Y2 publication Critical patent/JPH021859Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

【考案の詳細な説明】 産業上の利用分野 この考案は、Gaを含む膜状の半導体を製造す
る装置に用いられるシユラウドの製造方法に関す
る。
[Detailed Description of the Invention] Industrial Application Field This invention relates to a method for manufacturing a shroud used in an apparatus for manufacturing a film-like semiconductor containing Ga.

この明細書において、「アルミニウム」という
語には、純アルミニウムのほかにアルミニウム合
金も含むものとする。
In this specification, the term "aluminum" includes not only pure aluminum but also aluminum alloys.

従来技術とその問題点 たとえばGaAs等のGaを含む半導体膜をMBE
装置等の半導体製造装置で製造するにさいし、よ
り高性能なものを得るためには、超高真空中での
成膜が必要不可欠の条件となる。そのため、
MBE装置の成膜室にはシユラウドが用いられて
いる。従来のシユラウドは、ステンレス鋼板から
なる円筒状のもので、その外周面にステンレス鋼
製管がらせん状に巻付けられ、この管内を液体チ
ツソ等の冷却流体が流れるようになつている。そ
して、上記半導体膜の成膜時には、まずシユラウ
ドを200〜250℃に加熱することによりベーキング
処理を施してシユラウドの表面に吸着している水
分を除去した後、ステンレス鋼製管内に冷却流体
を流し、この冷却流体によつてシユラウドを冷却
し、その表面に真空化された成膜室中の残留ガス
を吸着させ、超高真空を得るようになつている。
しかしながら、従来のシユラウドでは筒体および
管がステンレス鋼製であるので、重量が大きく、
しかも熱伝導性が十分ではないという問題があつ
た。熱伝導性が十分でないと、上記ベーキングの
時にシユラウド全体が均一に加熱されるのに時間
がかかるとともに、冷却流体を流したさいにシユ
ラウドの表面が所定温度まで冷却されるのに時間
がかかるという問題があつた。
Conventional technology and its problems For example, MBE of semiconductor films containing Ga such as GaAs
When manufacturing with semiconductor manufacturing equipment such as equipment, film formation in an ultra-high vacuum is an essential condition in order to obtain higher performance. Therefore,
A shroud is used in the deposition chamber of the MBE equipment. A conventional shroud has a cylindrical shape made of a stainless steel plate, and a stainless steel tube is spirally wound around the outer peripheral surface of the shroud, and a cooling fluid such as liquid nitrogen flows through the tube. When forming the semiconductor film, first, the shroud is heated to 200 to 250°C to perform a baking treatment to remove moisture adsorbed on the surface of the shroud, and then a cooling fluid is poured into the stainless steel tube. The shroud is cooled by this cooling fluid, and the remaining gas in the evacuated film forming chamber is adsorbed on its surface to obtain an ultra-high vacuum.
However, in conventional shrouds, the cylinder body and tube are made of stainless steel, so they are heavy and
Moreover, there was a problem that the thermal conductivity was not sufficient. If the thermal conductivity is insufficient, it will take time for the entire shroud to be evenly heated during the above-mentioned baking process, and it will also take time for the surface of the shroud to cool down to a predetermined temperature when cooling fluid is flowed. There was a problem.

そこで、ステンレス鋼に比較して重量が小さ
く、熱伝導性が優れ、しかも表面のガス放出係数
の小さなアルミニウム材でシユラウドをつくるこ
とも考えられているが、アルミニウムは成膜中に
蒸発したGaが付着すると侵されて貫通孔が発生
するので、いまだアルミニウム製のシユラウドは
実現していないのが実情である。
Therefore, it has been considered to make a shroud using aluminum, which is lighter in weight than stainless steel, has excellent thermal conductivity, and has a small surface gas release coefficient. The reality is that shrouds made of aluminum have not yet been realized because if they adhere, they will corrode and create through holes.

この考案の目的は、上記の問題を解決した半導
体製造装置用シユラウドを提供することにある。
The purpose of this invention is to provide a shroud for semiconductor manufacturing equipment that solves the above problems.

問題点を解決するための手段 この考案による半導体製造装置用シユラウド
は、外面にアルミニウム製冷却流体流通管が接合
されたアルミニウム製本体の内面に、ステンレス
鋼板がクラツドされたものである。
Means for Solving the Problems The shroud for semiconductor manufacturing equipment according to this invention has a stainless steel plate clad on the inner surface of an aluminum body to which an aluminum cooling fluid flow pipe is bonded to the outer surface.

実施例 以下、この考案の実施例を図面を参照しながら
説明する。
Embodiments Hereinafter, embodiments of this invention will be described with reference to the drawings.

半導体製造装置用シユラウド1は、アルミニウ
ム製円筒状本体2と、本体2の外周面にらせん状
に巻付けられかつ本体2に接合されたアルミニウ
ム製冷却流体流通管3とよりなり、本体2の内面
にステンレス鋼板4がクラツドされたものであ
る。
A shroud 1 for semiconductor manufacturing equipment includes an aluminum cylindrical body 2 and an aluminum cooling fluid flow pipe 3 spirally wound around the outer peripheral surface of the body 2 and joined to the body 2. A stainless steel plate 4 is clad to the top.

冷却流体流通管3の両端はそれぞれ垂直下方に
伸びており、冷却流体流通管3における本体2の
下端部から下方に伸びた部分の端部に冷却流体供
給管5が接続され、本体2の上端部から下方に伸
びた部分の端部に冷却流体排出管6が接続されて
いる。そして、供給管5によつて冷却流体流通管
3の一端に送り込まれた液体チツ素等の冷却流体
は、本体2に沿つて上方に流れて上端に至り、そ
の後下方に垂直に流れて管3の他端から排出管6
内に流れ込むようになつている。
Both ends of the cooling fluid distribution pipe 3 extend vertically downward, and a cooling fluid supply pipe 5 is connected to the end of the portion of the cooling fluid distribution pipe 3 that extends downward from the bottom end of the main body 2. A cooling fluid discharge pipe 6 is connected to the end of the portion extending downward from the portion. The cooling fluid such as liquid nitrogen sent into one end of the cooling fluid distribution pipe 3 by the supply pipe 5 flows upward along the main body 2 to reach the upper end, and then vertically flows downward to the pipe 3. Discharge pipe 6 from the other end
It's starting to flow inward.

このようなシユラウド1は次のようにして製造
される。すなわち、まずアルミニウム板の片面に
ステンレス鋼板4をクラツドしてクラツド板をつ
くる。ついで、このクラツド板を円筒状に成形
し、その継目部分を溶接する。その後、この円筒
状体の外周面にらせん状のアルミニウム管を被せ
て円筒状体に接合する。こうして、シユラウド1
が製造される。上記クラツド板の厚さは2〜3
mm、クラツド板におけるステンレス鋼板4のクラ
ツド率は、2〜20%であることが好ましい。この
クラツド率が2%未満であると、Gaに対する耐
侵食効果が充分でなく、20%を越えると重量が大
きくなるからである。
Such a shroud 1 is manufactured as follows. That is, first, a stainless steel plate 4 is clad on one side of an aluminum plate to produce a clad plate. Next, this clad plate is formed into a cylindrical shape, and the joints are welded. Thereafter, a spiral aluminum tube is placed over the outer peripheral surface of this cylindrical body and joined to the cylindrical body. In this way, shroud 1
is manufactured. The thickness of the above clad plate is 2~3
mm, the cladding ratio of the stainless steel plate 4 in the clad plate is preferably 2 to 20%. If the cladding ratio is less than 2%, the anti-corrosion effect against Ga will not be sufficient, and if it exceeds 20%, the weight will increase.

考案の効果 この考案による半導体製造装置用シユラウド
は、外面にアルミニウム製冷却流体流通管が接合
されたアルミニウム製本体の内面に、ステンレス
鋼板がクラツドされたものであるから、従来の全
体がステンレス鋼でつくられたものと比較して軽
量で、熱伝導性が良い。特に、熱伝導性に優れて
いるので、従来のものに比べて半導体膜の成膜時
のベーキング処理時間を短縮することができると
ともに、冷却流体流通部に冷却流体を流して行な
う冷却のさいの冷却効率が向上し、半導体膜の成
膜時の残留ガス吸着率が向上する。しかも、半導
体膜の成膜時に蒸発したGaと接触する内面にス
テンレス鋼板がクラツドされているので、Gaに
対する耐侵食性がステンレス鋼製のものと同等で
ある。
Effects of the invention The shroud for semiconductor manufacturing equipment according to this invention has a stainless steel plate clad on the inner surface of an aluminum main body to which an aluminum cooling fluid flow pipe is bonded to the outer surface. It is lighter in weight and has better thermal conductivity compared to other manufactured materials. In particular, since it has excellent thermal conductivity, it is possible to shorten the baking treatment time during semiconductor film formation compared to conventional products, and it is also possible to reduce the time required for baking when forming a semiconductor film. Cooling efficiency is improved, and residual gas adsorption rate during semiconductor film formation is improved. Moreover, since a stainless steel plate is clad on the inner surface that comes into contact with Ga evaporated during the formation of the semiconductor film, the corrosion resistance against Ga is equivalent to that of stainless steel.

また、本体をアルミニウム材からつくるのであ
るから、全体をステンレス鋼材からつくる場合に
比較して加工が容易である。
Furthermore, since the main body is made from aluminum, it is easier to process than when the whole body is made from stainless steel.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案による半導体製造装置用シユ
ラウドの正面図、第2図は第1図の−線にそ
う拡大断面図である。 1……半導体製造装置用シユラウド、2……ア
ルミニウム製本体、3……アルミニウム製冷却流
体流通管、4……ステンレス鋼板。
FIG. 1 is a front view of a shroud for semiconductor manufacturing equipment according to this invention, and FIG. 2 is an enlarged sectional view taken along the - line in FIG. 1. DESCRIPTION OF SYMBOLS 1... Shroud for semiconductor manufacturing equipment, 2... Aluminum main body, 3... Aluminum cooling fluid distribution pipe, 4... Stainless steel plate.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 外面にアルミニウム製冷却流体流通管が接合さ
れたアルミニウム製本体の内面に、ステンレス鋼
板がクラツドされた半導体製造装置用シユラウ
ド。
A shroud for semiconductor manufacturing equipment that has a stainless steel plate clad on the inner surface of an aluminum body with aluminum cooling fluid flow pipes bonded to the outer surface.
JP15839085U 1985-10-15 1985-10-15 Expired JPH021859Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15839085U JPH021859Y2 (en) 1985-10-15 1985-10-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15839085U JPH021859Y2 (en) 1985-10-15 1985-10-15

Publications (2)

Publication Number Publication Date
JPS6265828U JPS6265828U (en) 1987-04-23
JPH021859Y2 true JPH021859Y2 (en) 1990-01-17

Family

ID=31081832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15839085U Expired JPH021859Y2 (en) 1985-10-15 1985-10-15

Country Status (1)

Country Link
JP (1) JPH021859Y2 (en)

Also Published As

Publication number Publication date
JPS6265828U (en) 1987-04-23

Similar Documents

Publication Publication Date Title
CN105253917B (en) A kind of preparation method of chemical vapor deposition rhenium metal presoma
CN110530184A (en) Aluminum-copper bonded vapor chamber and manufacturing method thereof
GB1302622A (en)
JPH021859Y2 (en)
FR3059758A1 (en) CRYOGENIC FLUID TRANSPORT TANK
CN106802106A (en) A kind of etch-proof heat exchanger preparation method with Graphene diaphragm of heat transfer efficient
JPH021860Y2 (en)
CN106338575A (en) Liquid metal purifying experiment apparatus
CN206724527U (en) A kind of refrigerator refrigeration system backheat structure
US3512245A (en) Method of bonding metals and products produced thereby
CN211476324U (en) Heat collecting pipe with high-efficiency heat conduction
JPS60108643A (en) solar heat collector
JPH0568539B2 (en)
CN109059600A (en) Silicon carbide-metal composite finned heat exchange tube and preparation method thereof
CN223846269U (en) Desublimator for refining iodine
CN223525320U (en) Far infrared heating's hot water tank
US3387969A (en) Oxygen scavenging method
CN110524146A (en) A kind of titanium alloy test plate (panel) welding atmosphere protection setting device
JPS5923860A (en) Production of lead coated steel pipe
JPS5982114A (en) Production of aluminum finned iron pipe
CN213242499U (en) Thyristor chip mesa corrosion equipment
JPH0429198Y2 (en)
CN210241972U (en) Water circulation device for heating boiler
JPH10274399A (en) Portable ultra-low temperature liquefied gas container
JPH0699755B2 (en) Heat treatment method for metal tubes