JPH021910B2 - - Google Patents
Info
- Publication number
- JPH021910B2 JPH021910B2 JP12076181A JP12076181A JPH021910B2 JP H021910 B2 JPH021910 B2 JP H021910B2 JP 12076181 A JP12076181 A JP 12076181A JP 12076181 A JP12076181 A JP 12076181A JP H021910 B2 JPH021910 B2 JP H021910B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- monitor
- rate
- control
- central monitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007740 vapor deposition Methods 0.000 claims description 14
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は撮像管のターゲツトの製造に用いて好
適な蒸着方法に係り、特にサチコン(商品名)膜
各層の蒸着源構成比を安定させるのに好適な自動
蒸着制御方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vapor deposition method suitable for use in manufacturing targets for image pickup tubes, and in particular to an automatic vapor deposition control method suitable for stabilizing the composition ratio of vapor deposition sources for each layer of Sachicon (trade name) film. Regarding.
従来のサチコン蒸着技術は、レートのコントロ
ールはサイドモニタで、膜厚量は中央モニタを使
つて行なつていた。サイドモニタは面板とは別の
位置にあるためコントロールするレートを中央と
サイドの理論的な比により計算して決めていた
が、この方法では蒸着源のボートのセツト状態、
又は治具等により、サイドと中央の蒸着比が一定
に出てこないという欠点があつた。 In the conventional Sachicon deposition technology, the rate was controlled using a side monitor, and the film thickness was controlled using a central monitor. Since the side monitor is located in a different position from the face plate, the control rate was determined by calculating the theoretical ratio between the center and the side.
Another drawback was that the deposition ratio between the sides and the center was not constant due to the use of jigs and the like.
本発明の目的は、サチコン等の蒸着膜各層の蒸
着源構成比を安定させ、特性の安定した蒸着膜を
形成する自動蒸着制御方法を提供することにあ
る。 An object of the present invention is to provide an automatic vapor deposition control method that stabilizes the composition ratio of vapor deposition sources for each layer of a vapor deposited film such as Sachicon, and forms a vapor deposited film with stable characteristics.
従来のレートコントロール方法で、ある程度の
特性が得られていたが、これ以上の安定した特性
を得るにはどうしたら良いかを検討中に、中央モ
ニタで蒸着量を測定しているのでそれを利用して
コントロールすれば安定した特性を得られること
がわかり、本発明にいたつた。 A certain level of characteristics had been obtained using the conventional rate control method, but while we were considering how to obtain more stable characteristics, we decided to use the central monitor to measure the amount of evaporation. It was found that stable characteristics could be obtained by controlling the temperature, leading to the present invention.
以下、本発明の実施例を第1図および第2図に
より説明する。 Embodiments of the present invention will be described below with reference to FIGS. 1 and 2.
第1図a,bにおいて、ベルジヤー1の中には
一定速度で回転するターンテーブル2が設けら
れ、その上にサイドモニタ3、中央モニタ4およ
び撮像管に用いる面板5が配置されている。スリ
ツト6には開口部が2個所あり、一方はサイドモ
ニタ3用、他方は中央モニタ4および面板5用と
なつているが、シヤツタ7がその開口部にかぶさ
つているため、レートが安定してシヤツタ7を開
ける(横に移動する)までは中央モニタ4および
面板5には蒸着されないようになつている。な
お、8は複数個の穴を持つボートである。 In FIGS. 1a and 1b, a turntable 2 that rotates at a constant speed is provided in a bell gear 1, and a side monitor 3, a central monitor 4, and a face plate 5 used for an image pickup tube are arranged on the turntable 2. The slit 6 has two openings, one for the side monitor 3 and the other for the central monitor 4 and face plate 5, but since the shutter 7 covers these openings, the rate is not stable. The central monitor 4 and the face plate 5 are not deposited until the shutter 7 is opened (moved sideways). Note that 8 is a boat having a plurality of holes.
第2図a,bにレートコントロールのタイムチ
ヤートを示す。スタートAと同時にボート8に電
流を通電し、ボート8内の材料を溶かして蒸発
(又は昇華)させる。サイドモニタ3でターンテ
ーブル2の1回転の蒸発量(レート)F1を測定
し、設定レートと比較して電流をコントロール
する。レートF1が安定したらB点でシヤツタ7
を開け、中央モニタ4および面板5に蒸着を開始
する。これと同時に中央モニタ4でレートF2を
測定し、電流をコントロールし蒸着をつづけ
る。規定の蒸着量になつたらC点でシヤツタ7を
閉じ、蒸着を終了する。設定レートはサイドモニ
タ3用と中央モニタ4用にそれぞれ任意の値を設
定する。 Figures 2a and 2b show time charts for rate control. At the same time as start A, current is applied to the boat 8 to melt and evaporate (or sublimate) the material inside the boat 8. The side monitor 3 measures the amount of evaporation (rate) F1 per rotation of the turntable 2, and compares it with the set rate to control the current. When rate F1 stabilizes, shutter 7 at point B
, and start vapor deposition on the central monitor 4 and face plate 5. At the same time, the rate F2 is measured on the central monitor 4, and the current is controlled to continue vapor deposition. When the prescribed amount of vapor deposition is reached, the shutter 7 is closed at point C, and the vapor deposition is completed. The set rate is set to an arbitrary value for the side monitor 3 and the central monitor 4, respectively.
なお、蒸着源は数ボジシヨンあり、同時に複数
ボジシヨンのレートコントロールを行ない、全て
のボジシヨンのレートが安定するまではシヤツタ
7は開けない。 It should be noted that the evaporation source has several positions, and the rate control of a plurality of positions is performed at the same time, and the shutter 7 is not opened until the rates of all positions are stabilized.
本実施例によれば、複数の蒸着源で蒸着をした
場合、その構成比が安定し、特性、歩留り効果が
ある。 According to this embodiment, when vapor deposition is performed using a plurality of vapor deposition sources, the composition ratio is stabilized, and the characteristics and yield are improved.
本発明によれば、シヤツタを開けると同時に中
央モニタコントロールに切り換えるため、ボート
のかたむき等によるサイドモニタと中央モニタの
比のムラを解消できるので制御性の向上に効果が
ある。 According to the present invention, since the control is switched to the central monitor at the same time as the shutter is opened, it is possible to eliminate unevenness in the ratio between the side monitor and the central monitor due to the tilting of the boat, etc., thereby improving controllability.
第1図は本発明の一実施例を適用する蒸着装置
を示すものでaは平面図、bは断面図、第2図は
タイムチヤートである。
1……ベルジヤ、2……ターンテーブル、3…
…サイドモニタ、4……中央モニタ、5……面
板、6……スリツト、7……シヤツタ、8……ボ
ート。
FIG. 1 shows a vapor deposition apparatus to which an embodiment of the present invention is applied, in which a is a plan view, b is a sectional view, and FIG. 2 is a time chart. 1... Berjia, 2... Turntable, 3...
...Side monitor, 4...Central monitor, 5...Face plate, 6...Slit, 7...Shutter, 8...Boat.
Claims (1)
着制御方法において、レートコントロール用のモ
ニタとしてサイドモニタと被蒸着物と同じ位置に
ある中央モニタとを設け、レートが安定し蒸着を
開始するまではサイドモニタにてコントロール
し、蒸着を開始してからは自動的に切換えて中央
モニタにてコントロールするようにした自動蒸着
制御方法。1. In an automatic evaporation control method for a vacuum evaporation apparatus having multiple evaporation sources, a side monitor and a central monitor located at the same position as the object to be evaporated are provided as monitors for rate control, and until the rate stabilizes and evaporation starts, An automatic vapor deposition control method in which control is performed using a side monitor, and after the start of vapor deposition, it is automatically switched to control using a central monitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12076181A JPS5822378A (en) | 1981-08-03 | 1981-08-03 | Automatic deposition control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12076181A JPS5822378A (en) | 1981-08-03 | 1981-08-03 | Automatic deposition control method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5822378A JPS5822378A (en) | 1983-02-09 |
| JPH021910B2 true JPH021910B2 (en) | 1990-01-16 |
Family
ID=14794331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12076181A Granted JPS5822378A (en) | 1981-08-03 | 1981-08-03 | Automatic deposition control method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5822378A (en) |
-
1981
- 1981-08-03 JP JP12076181A patent/JPS5822378A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5822378A (en) | 1983-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003160855A (en) | Thin film forming equipment | |
| GB1532183A (en) | Apparatus for vacuum deposition | |
| JPS5210869A (en) | Thin film forming method | |
| JPS59208069A (en) | Evaporation device having radiation heat portion for evaporating many substances | |
| JPS61250163A (en) | Method and apparatus for production of multi-layered thin film | |
| JPS6115964A (en) | Vacuum deposition device | |
| JPS6082663A (en) | Method and apparatus for manufacturing mixture thin film | |
| JPS5822378A (en) | Automatic deposition control method | |
| JPH0419302B2 (en) | ||
| JPS62230966A (en) | Device for growing crystal | |
| JPS58207369A (en) | Vacuum deposition device | |
| JPS6473075A (en) | Film forming device by ion beam sputtering | |
| JPS5739172A (en) | Apparatus for preparing thin film | |
| JPS5837952Y2 (en) | Vacuum deposition equipment | |
| JPS62297466A (en) | Thin film production method | |
| JPH0562459B2 (en) | ||
| JPS595733Y2 (en) | Vacuum deposition equipment | |
| JPH0630179B2 (en) | Vacuum deposition equipment | |
| JPH01319673A (en) | Laser beam sputtering method | |
| JPS6327870B2 (en) | ||
| JPH1150239A (en) | PVD equipment | |
| JPH0242062U (en) | ||
| JPS62287069A (en) | Sputtering apparatus | |
| JPS6011373B2 (en) | Method for manufacturing magnetic recording media | |
| JP2600179B2 (en) | Method of forming racemic thin film |