JPH02192145A - Semiconductor device - Google Patents

Abstract

PURPOSE:To make small the area to be occupied by a fuse formation part in a chip and, moreover, to prevent the insulation failure, which is caused by breaking, of an interlayer insulating film and a field insulating film by a method wherein a fuse consisting of a poly silicon wiring is provided between first and second Al wiring layers. CONSTITUTION:A fuse consisting of a poly silicon wiring 3 is forned on a first Al wiring 2 formed on an interlayer insulating film 4 and is connected to a second Al wiring 1 formed on the film 4. Thereby, the area of a fuse formation part becomes equal with the areas of the wirings 2 and 1 formed somewhat wider than the wiring 3 and can be made smaller than the area of that formed by a conventional method. Moreover, as the fuse is formed in such a way that it is pinched by the wirings 2 and 1 in the direction over a semiconductor substrate 6, the insulation failure, which is caused by breaking, of the upper and lower parts of the fuse can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device with a built-in fuse, and particularly to a first semiconductor device.
The present invention relates to the structure of a fuse made of polycrystalline silicon wiring formed between an aluminum wiring layer and a second aluminum wiring layer.

[Conventional technology]

Conventionally, semiconductor devices with built-in fuses, which have built-in fuses and redundant circuits for trimming internal resistance, etc., have a fuse made of polycrystalline silicon wiring between the first aluminum wirings, and a fuse made of polycrystalline silicon wiring to prevent damage due to heat. It had a structure in which a window was provided by removing a portion of the upper interlayer insulating film and passivation film.

[Problem to be solved by the invention]

The conventional fuse built-in semiconductor device described above is shown in FIG.
As shown in a) and (b), a fuse consisting of a polycrystalline silicon wiring 3 is provided on a field insulating film 5 between the first aluminum wirings 2 and connected via a contact 7. In order to prevent this, the layered insulating film 4 and passivation film 9 above the fuse are partially removed and a window 8 is provided. In this structure, it is necessary to increase the distance between the first aluminum wires 2 in the portions forming the fuse and between the first aluminum wires 2 and the window 8. Furthermore, since the contact 7 is required, there is a drawback that the area within the chip is increased.

Further, although the window 8 has the effect of preventing breakdown of the interlayer insulating film 4, it has the disadvantage that it cannot prevent insulation failure due to breakdown of the field insulation 5.

[Means to solve the problem]

A semiconductor device with a built-in fuse of the present invention has a structure in which a fuse made of polycrystalline silicon wiring and blown by a current is provided between a first aluminum wiring layer and a second aluminum wiring layer formed on one main surface of a semiconductor substrate. have.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1(a) is a plan view of one embodiment of the present invention, FIG.
b) is a sectional view taken along line AA' in FIG. 1(a). A fuse made of polycrystalline silicon interconnect 3 is formed on first aluminum interconnect 2 formed on interlayer insulating film 4 and connected to second aluminum interconnect 1 formed on interlayer insulating film 4 . Therefore, the area of the fuse forming portion is the first aluminum wiring 2. which is formed slightly wider than the polycrystalline silicon wiring 3. The area of the second aluminum wiring 1 can be made smaller than the conventional one. Furthermore, a fuse is connected to the first aluminum wiring 2 and the second aluminum wiring in the upper direction of the semiconductor substrate.
Since the aluminum wiring 1 is formed so as to be sandwiched therebetween, it is possible to prevent insulation failure due to breakdown of the upper and lower portions of the fuse.

〔Effect of the invention〕

As explained above, the present invention provides a first aluminum wiring layer and a second aluminum wiring layer.
By providing a fuse made of polycrystalline silicon wiring between the aluminum wiring layers, it is possible to reduce the area where the fuse is formed within the chip, and also to prevent insulation failure due to breakdown of the interlayer insulation film or field insulation film.

[Brief explanation of the drawing]

FIG. 1(a) is a plan view of a semiconductor chip showing an embodiment of the present invention, FIG. 1(b) is a sectional view taken along line A-A' in FIG. 1(a), and FIG. ) is a plan view of a conventional semiconductor chip, and FIG. 2(b) is a sectional view taken along line AA' in FIG. 2(a). 1... Second aluminum wiring, 2... Marked first aluminum wiring, 3... Polycrystalline silicon wiring, 4...
...Interlayer insulating film, 5...Field insulating film, 6
... Semiconductor substrate, 7 ... Contact,
8... Window, 9... Passivation film. Agent Patent Attorney Susumu Uchihara＼

Claims (1)

[Claims] 1. A semiconductor device comprising a fuse made of polycrystalline silicon wiring provided between a first aluminum wiring layer and a second aluminum wiring layer formed on one principal surface of a semiconductor substrate and blown by current.