JPH02192402A - Formation of protective film for oxide superconducting material - Google Patents
Formation of protective film for oxide superconducting materialInfo
- Publication number
- JPH02192402A JPH02192402A JP1009777A JP977789A JPH02192402A JP H02192402 A JPH02192402 A JP H02192402A JP 1009777 A JP1009777 A JP 1009777A JP 977789 A JP977789 A JP 977789A JP H02192402 A JPH02192402 A JP H02192402A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- forming
- plasma
- superconducting material
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明は、酸化物超伝導材料の保護膜の形成方法に関し
、
酸化物超伝導材料の組成変動を防止してその本来の特性
を確保しながら、十分な防湿性を有する保護膜を形成す
る、酸化物超伝導材料の保護膜の形成方法を提供するこ
とを目的とし、
基板上に酸化物超伝導体層を形成し、次いで、前記酸化
物超伝導体層の全面に電子サイクロトロン共鳴によるプ
ラズマ化学気相成長によって保護〔産業上の利用分野〕
本発明は、酸化物超伝導材料の保護膜の形成方法に関し
、特に酸化物超伝導材料を構成要素として含む超伝導素
子の安定性と信頼性を向上させる保護膜形成法に関する
。[Detailed Description of the Invention] [Summary] The present invention relates to a method for forming a protective film on an oxide superconducting material, and a method for forming a protective film on an oxide superconducting material, which prevents compositional fluctuations in the oxide superconducting material and secures its original properties. The purpose of the present invention is to provide a method for forming a protective film of an oxide superconductor material, which forms a protective film having moisture-proof properties. The present invention relates to a method for forming a protective film of an oxide superconducting material on the entire surface of the body layer by plasma chemical vapor deposition using electron cyclotron resonance (industrial application field). This invention relates to a method for forming a protective film that improves the stability and reliability of superconducting devices.
電気抵抗が零である超伝導材料は、電力の消費が全くな
いため電力配線等に使用する試みやジョセフソン素子な
どの電子装置の開発が活発に行われてきた。近年酸化物
系の高温超伝導材料が発見されるにおよんで更に応用分
野が広がりつつある。Superconducting materials with zero electrical resistance consume no power at all, so attempts have been made to use them for power wiring, etc., and to develop electronic devices such as Josephson devices. In recent years, the discovery of oxide-based high-temperature superconducting materials has further expanded the field of application.
特に半導体装置の電気配線材料として使用することによ
り装置の電力損失を減らし、動作速度を向上させること
が出来ると期待される。このため種々の試みが行われて
いるが、酸化物薄膜の特性信頼性が乏しく製品工程中に
劣化してしまい、装置の信頼性を損ねていた。従って、
超伝導素子の信頼性を上げることが重要になっている。In particular, it is expected that by using it as an electrical wiring material for semiconductor devices, it will be possible to reduce the power loss and improve the operating speed of the device. Various attempts have been made to solve this problem, but the reliability of the oxide thin film's characteristics is poor and it deteriorates during the product process, impairing the reliability of the device. Therefore,
It has become important to improve the reliability of superconducting devices.
酸化物超伝導材料は水分を吸収すると超伝導特性が劣化
するため、防湿性の優れた保護膜で表面が被覆される必
要がある。Since superconducting properties of oxide superconducting materials deteriorate when they absorb moisture, their surfaces must be coated with a protective film with excellent moisture resistance.
従来、このような保護膜は、スパッタ、高周波プラズマ
化学気相成長法（ＲＦプラズマＣＶＤ）等によって、超
伝導材料上に主としてＳｉ３Ｎ、、 ５ｉＯＮ。Conventionally, such a protective film has been formed on a superconducting material by sputtering, radio frequency plasma chemical vapor deposition (RF plasma CVD), etc., mainly Si3N, 5iON.
ＳｌＯ□等のＳｉ系の化合物を被着させることによって
形成していた。保護膜の防湿性はその緻密性に大きく依
存する。従来のスパッタ、ＲＦプラズマＣＶＤ等によっ
て、十分な緻密性で保護膜を形成するためには、基板温
度をたとえば２５０℃以上（スパッタ）あるいは３５０
℃以上（ＲＦプラズマＣＶ Ｄ）のような高温にして形
成する必要がある。It was formed by depositing a Si-based compound such as SlO□. The moisture-proofing properties of the protective film largely depend on its denseness. In order to form a protective film with sufficient density by conventional sputtering, RF plasma CVD, etc., the substrate temperature must be set to 250°C or higher (sputtering) or 350°C or higher, for example.
It is necessary to form the film at a high temperature such as 0.degree. C. or higher (RF plasma CVD).
しかし、酸化物超伝導材料は、２００℃以上になるとそ
の成分特にＣｕ等が上記のＳｉ化合物と反応し易くなり
、保護膜形成中にこの反応によって組成変動が生じて超
伝導特性が劣化する。そのため、上記のような高温を必
要とする従来のスパッタ、ＲＦプラズマＣＶＤでは、超
伝導材料本来の特性を確保しながら十分な防湿性を有す
る保護膜を形成することには限界があるという問題があ
った。However, when the temperature of the oxide superconducting material exceeds 200° C., its components, particularly Cu, tend to react with the above-mentioned Si compound, and this reaction causes compositional fluctuations during the formation of the protective film, deteriorating the superconducting properties. Therefore, with conventional sputtering and RF plasma CVD, which require high temperatures as described above, there is a problem that there is a limit to the ability to form a protective film with sufficient moisture resistance while maintaining the original characteristics of superconducting materials. there were.
本発明は、酸化物超伝導材料の組成変動を防止してその
本来の特性を確保しながら、十分な防湿性を有する保護
膜を形成する、酸化物超伝導材料の保護膜の形成方法を
提供することを目的とする。The present invention provides a method for forming a protective film of an oxide superconducting material, which forms a protective film having sufficient moisture resistance while preventing compositional fluctuations of the oxide superconducting material and ensuring its original properties. The purpose is to
上記の目的は、本発明によれば、基板上に酸化物超伝導
体層を形成し、次いで、前記酸化物超伝導体層の全面に
電子サイクロトロン共鳴によるプラズマ化学気相成長に
よって保護膜を形成することを特徴とする酸化物超伝導
体の保護膜形成方法によって達成される。According to the present invention, an oxide superconductor layer is formed on a substrate, and a protective film is then formed on the entire surface of the oxide superconductor layer by plasma chemical vapor deposition using electron cyclotron resonance. This is achieved by a method for forming a protective film on an oxide superconductor, which is characterized by the following.
本発明においては、電子サイクロトロン共鳴によるプラ
ズマ化学気相成長法（ＥＣＲプラズマＣＶＤ）によって
保護膜を形成する。ＥＣＲプラズマＣＶＤは、従来のＲ
ＦプラズマＣＶＤ等と比較して、プラズマ電子密度およ
びプラズマ電子温度を容易に高めることができる。その
ため、基板温度を２００℃より低温にして酸化物超伝導
材料の組成変動を防止しながら、十分に高い緻密性を有
する保護膜を形成することができる。特に、基板温度を
１００℃以下とすれば、酸化物超伝導材料の成分、特に
Ｃｕとの反応を完全に防止しながら、Ｓｉ３Ｎ、、 ５
ｉＯＮ、 Ｓｉｎ□等の防湿性の優れたＳｉ化合物の保
護膜を形成するために極めて有利である。In the present invention, the protective film is formed by plasma chemical vapor deposition using electron cyclotron resonance (ECR plasma CVD). ECR plasma CVD is a conventional R
Compared to F plasma CVD and the like, plasma electron density and plasma electron temperature can be easily increased. Therefore, it is possible to form a protective film having sufficiently high density while keeping the substrate temperature lower than 200° C. and preventing compositional fluctuations in the oxide superconducting material. In particular, if the substrate temperature is 100°C or less, Si3N, 5
This is extremely advantageous for forming a protective film of a Si compound with excellent moisture resistance, such as iON or Sin□.
第１図および第２図に、水冷したＳｉ基板上にＥＣＲプ
ラズマＣＶＤによって形成した厚さ１１０００ｎのＳｉ
３Ｎ、膜の緻密性に及ぼすプラズマ電子密度（ｎｅ）お
よびプラズマ電子温度（Ｔｅ）の影響の典型例を示す。Figures 1 and 2 show a Si substrate with a thickness of 11000 nm formed by ECR plasma CVD on a water-cooled Si substrate.
3N, a typical example of the influence of plasma electron density (ne) and plasma electron temperature (Te) on film density is shown.
ここで、緻密性の尺度として５０％フッ酸中でのエツチ
ングレート（Ｂ、Ｒｏ）を用いた。Here, the etching rate (B, Ro) in 50% hydrofluoric acid was used as a measure of denseness.
第１図から明らかなように、エツチングレート（ｌ Ｒ
，）はプラズマ電子密度（ｎｅ）の増加に伴って減少し
、緻密性が高まる。保護膜として必要な緻密性の目安は
、巳、Ｒ０値が１０３（人／ｌＴｌ１ｎ）程度以下であ
ることである。点Ａは、従来のＲＦプラズマＣＶＤで可
能なほぼ上限のプラズマ電子密度に相当するｎｅ ＝
４ ＸＩＯ”（ａｍ−’）で形成した３１３Ｎ４ （７
）場合であり、Ｅ、Ｒ，＝ １．５ ＸＩＯ’（人／ｍ
１ｎ）程度の緻密性しか得られず保護膜としては不十分
である。As is clear from Fig. 1, the etching rate (l R
, ) decreases as the plasma electron density (ne) increases, and the density increases. The standard of density necessary for the protective film is that the R0 value is approximately 103 (people/lTl1n) or less. Point A corresponds to approximately the upper limit of plasma electron density possible in conventional RF plasma CVD, where ne =
313N4 (7
), and E, R, = 1.5 XIO'(person/m
Only a density of about 1n) can be obtained, which is insufficient as a protective film.
一方、点ＢおよびＣは、ＥＣＲプラズマＣＶＤで容易に
得られる高プラズマ電子密度の例としてそれぞれ２ ｘ
ｌＱｌｏ （ａｍ−３）および４ ｘｌＱｌＯ（ｃｍ−
３）で形成した５ｉｓＮｉの場合であり、６．Ｒｏは非
常に減少しており、十分な緻密性が得られる。On the other hand, points B and C are each 2 x
lQlo (am-3) and 4 xlQlO (cm-
This is the case of 5isNi formed in 3), and 6. Ro is greatly reduced and sufficient density can be obtained.
第２図から、プラズマ電子温度Ｔｅζ４．５ｅＶ以上で
Ｂ、 Ｒ，値が低く、したがって高い緻密性が安定して
得られることがわかる。本発明にしたがったＥＣＲプラ
ズマＣＶＤによれば、この範囲のプラズマ電子温度を容
易に達成できる。一方、従来のＲＦプラズマＣＶＤでは
プラズマ電子温度の範囲が約３〜４ｅＶ程度であり、こ
れはＥ、Ｒ，値の極大領域であり、すなわち緻密性が極
めて低くなるという欠点があちた。From FIG. 2, it can be seen that the B, R, values are low at plasma electron temperatures Teζ of 4.5 eV or higher, and therefore high density can be stably obtained. According to ECR plasma CVD according to the present invention, plasma electron temperatures in this range can be easily achieved. On the other hand, in conventional RF plasma CVD, the range of plasma electron temperature is about 3 to 4 eV, which is the maximum region of E, R, and values, which has the drawback of extremely low density.
従来は、緻密性を高めるために１ま基板温度を２００℃
程度まで上げざるを得なかったため、酸化物超伝導材料
と保護膜との反応を防止することが困難であった。Conventionally, the substrate temperature was increased to 200°C to improve density.
Therefore, it was difficult to prevent the reaction between the oxide superconducting material and the protective film.
これに対して、本発明では、高いレベルのプラズマ電子
密度およびプラズマ電子温度が得られるＥＣＲプラズマ
ＣＶＤを用いるので、酸化物超伝導材料と保護膜との反
応を防止しながら、十分な緻密性すなわち防湿性の保護
膜を形成できる。On the other hand, the present invention uses ECR plasma CVD, which can obtain a high level of plasma electron density and plasma electron temperature. A moisture-proof protective film can be formed.
以下に、添付図面を参照し、実施例によって本発明を更
に詳しく説明する。In the following, the invention will be explained in more detail by means of examples with reference to the accompanying drawings.
実施例１゜
ＭｇＯ基板１上にスパッタ法によって形成した厚さ約５
００ｎｍのＹＢａＣｕＯｔ−ｇ超伝導膜２上に、本発明
にしたがって厚さ１１００ｎのＳｉ３Ｎ４の保護膜３を
下記条件で形成した（第３図）。Example 1 A film with a thickness of approximately 5 mm formed by sputtering on an MgO substrate 1
According to the present invention, a protective film 3 of Si3N4 with a thickness of 1100 nm was formed on the YBaCuOt-g superconducting film 2 with a thickness of 00 nm under the following conditions (FIG. 3).
５ＩＨ４流量；３０ｃｃ／ｍｉｎ。5IH4 flow rate: 30cc/min.
Ｎ２流量； ４０ｃｃ／ｍｉｎ。N2 flow rate: 40cc/min.
マイクロ波パワー： ９００Ｗ ＲｌＦ、パワー；１０に 基板温度・室温〜１００℃ 圧力 ； ３ Ｘｌ０−’Ｔｏｒｒ。Microwave power: 900W RlF, power; to 10 Substrate temperature/room temperature ~100℃ Pressure; 3Xl0-'Torr.
成長時間；１分
得られた保護膜を赤外線吸収スペクトル法によって分析
した結果、ＳｉＮの結合ピークのみが観察された。この
ことから、ＹＢａＣｕ［１ｔ−ｘ超伝導膜との間で全く
反応を生じないで純粋なＳｉＮの保護膜が形成されたこ
とがわかる。Growth time: 1 minute As a result of analyzing the obtained protective film by infrared absorption spectroscopy, only the bonding peak of SiN was observed. This shows that a pure SiN protective film was formed without any reaction occurring with the YBaCu[1t-x superconducting film.
この保護膜について、５０％フッ酸中のエツチングレー
ト（Ｂ、Ｒｏ）を測定したところ、５００人／ｍ ｉ
ｎであり、酸化物超伝導材料の保護膜として十分な防湿
性を有する。When the etching rate (B, Ro) of this protective film was measured in 50% hydrofluoric acid, it was found to be 500 people/m i
n, and has sufficient moisture resistance as a protective film for oxide superconducting materials.
実施例２゜
ソース、ドレイン、およびゲート各電極部分く１０゜２
０ 、３０）をＬａ２−）ｌ Ｓｒｘ Ｃｕ０４−ｙ超
伝導材料で形成したＭＯ３ＦＥＴ表面に、本発明にした
がって厚さ１１００ｎの５ｉＯＮ保護膜４を下記条件で
形成したく第４図）。Example 2 Source, drain, and gate electrodes: 10°2
According to the present invention, a 5iON protective film 4 having a thickness of 1100 nm was formed under the following conditions on the surface of an MO3FET made of La2-)lSrxCu04-y superconducting material (Fig. 4).
ＳｉＨ，流量； ３Ｑｃｃ／＋ｔ＋ｉｎ。SiH, flow rate; 3Qcc/+t+in.
Ｎ２流量； ２Ｑｃｃ／ｍ＋ｎ。N2 flow rate; 2Qcc/m+n.
０□流１ ； ２Ｑｃｃ／ｍｉｎ。0□Flow 1; 2Qcc/min.
マイクロ波パワー； ８００１！ Ｒ，Ｆ、パワー； ＬＯＷ 基板温度；室温〜１００℃ 圧力 ； ３ Ｘｌ０−”Ｔｏｒｒ。Microwave power; 8001! R, F, power; LOW Substrate temperature: room temperature to 100℃ Pressure; 3X10-”Torr.
成長時間；１分
得られた保護膜を赤外線吸収スペクトル法によって分析
した結果、５ｉＯＮの結合ピークのみが観察されｔコ。Growth time: 1 minute When the obtained protective film was analyzed by infrared absorption spectroscopy, only the binding peak of 5iON was observed.
このことから、Ｌａ、、 Ｓｒｘ Ｃｕ０４−ｙ超伝導
材料との間で全く反応を生じないで純粋な５ｉＯＮの保
護膜が形成されたことがわかる。This shows that a pure 5iON protective film was formed without any reaction with the La, Srx Cu04-y superconducting material.
この保護膜について、５０％フッ酸中のエツチングレー
ト（Ｅ、 Ｒ，’）を測定したところ、８００Ａ／ｍｉ
ｎであり、酸化物超伝導材料の保護膜として十分な防湿
性を有する。The etching rate (E, R,') of this protective film in 50% hydrofluoric acid was measured and found to be 800 A/mi.
n, and has sufficient moisture resistance as a protective film for oxide superconducting materials.
実施例３゜
ソース、ドレイン、およびゲート各電極部分（１０’
、 ２０’ 、 ３０’ ）をＹＢａＣｕＯｔ−ｘ超伝
導材料で形成したＭＯ３ＦＩＥＴ表面に、本発明にした
がって、厚さ１１００ｎのＳｉＯ保護膜５を形成しその
上に更に厚さ１１００ｎのＳｉＮ保護膜６を形成した（
第５図）。Example 3 Source, drain, and gate electrode portions (10'
, 20', 30') formed of YBaCuOt-x superconducting material, an SiO protective film 5 with a thickness of 1100 nm is formed according to the present invention, and an SiN protective film 6 with a thickness of 1100 nm is further formed on the surface of the MO3FIET. formed (
Figure 5).
それぞれの保護膜の形成条件は下記のとおりであった。The conditions for forming each protective film were as follows.
Ｓｉｎ膜の形成条件 ＳｉＨ４流量 ０２流量 マイクロ波パワー ＲｌＦ、パワー 基板温度 圧力 成長時間 ＳＩＮ膜の形成条件 ＳｉＨ４流量 Ｎ２流量 マイクロ波パワー Ｒ，Ｆ、パワー 基板温度 圧力 ３０ｃｃ／ｍｉｎ。Conditions for forming the Sin film SiH4 flow rate 02 flow rate microwave power RlF, power Substrate temperature pressure growth time Conditions for forming SIN film SiH4 flow rate N2 flow rate microwave power R, F, power Substrate temperature pressure 30cc/min.
４０ｃｃ／ｍｉｎ。40cc/min.
００Ｗ ｒ、 ｔ、 〜１００℃ ３×１叶’Ｔｏｒｒ。00W r, t, ~100℃ 3×1 leaf’Torr.
１分 ３０ｃｃ／ｍｉｎ。1 minute 30cc/min.
４０ｃｃ／ｍｉｎ。40cc/min.
６００１’１ ０Ｗ ｒ、ｔ、〜１００℃ ３ Ｘ １Ｏ−３Ｔｏｒｒ。6001'1 0W r, t, ~100℃ 3×1O-3Torr.
成長時間；１分
この条件で約１１００ｎ以上のＳｉＯ膜＋１１００ｎ以
上のＳｉＮ膜が形成される。ＳｉＯ膜を先に形成したの
は、酸化物超伝導体は成分の酸素の不定比性が高いので
、先にＳｉＯ膜を形成するごとにより酸素の安定性を増
すためである。Growth time: 1 minute Under these conditions, an SiO film of about 1100 nm or more + an SiN film of about 1100 nm or more is formed. The reason why the SiO film was formed first is that since the oxygen component of the oxide superconductor has a high non-stoichiometric ratio, the stability of oxygen increases each time the SiO film is formed first.
各段階で得られた保護膜を赤外線吸収スペクトル法によ
って分析した結果、それぞれＳｉＯおよびＳｉＮの結合
ピークのみが観察された。このことから、ＹＢａＣｕＯ
ｔ−ｘ超伝導膜との間で全く反応を生じないで純粋な５
ｉｎ２およびＳｉ３Ｎ、の保護膜が形成されたことがわ
かる。As a result of analyzing the protective films obtained at each stage by infrared absorption spectroscopy, only the bond peaks of SiO and SiN were observed, respectively. From this, YBaCuO
pure 5 without any reaction with the t-x superconducting film.
It can be seen that protective films of in2 and Si3N were formed.
この保護膜について、５０％フッ酸中のエツチングレー
ト（Ｂ、 Ｒｏ）を測定したところ、１０００人／ｍ
ｉ ｎであり、酸化物超伝導材料の保護膜として十分な
防湿性を有する
〔発明の効果〕
以上説明したように、本発明によれば、低温で高温超伝
導体の保護膜を形成できるので、高温超伝導体の組成変
動を防止しながら水分の浸入をふせぎ高温超伝導体およ
び高温超伝導素子の信頼性を向上させることが出来る。When the etching rate (B, Ro) of this protective film was measured in 50% hydrofluoric acid, it was found to be 1000 people/m.
i n and has sufficient moisture-proofing properties as a protective film for oxide superconducting materials. [Effects of the Invention] As explained above, according to the present invention, a protective film for high-temperature superconductors can be formed at low temperatures. This makes it possible to improve the reliability of high-temperature superconductors and high-temperature superconducting devices by preventing moisture from entering the high-temperature superconductor while preventing compositional fluctuations.
第１図は、保護膜のエツチングレート（Ｅ、Ｒ，）に及
ぼすプラズマ電子密度（ｎｅ）の影響の例を示すグラフ
、
第２図は、保護膜のエツチングレート（ＩＥ、 Ｒ，）
に及ぼすプラズマ電子温度（Ｔｅ）の影響の例を示すグ
ラフ、
第３図は、本発明にしたがってＹＢａＣｕＯｔ−ｘ超伝
導膜上にＳｉＮ保護膜を形成した例を示す断面図、第４
図は、電極部分をＬａ２−ｘ ５ｒＸＣｕ０４−ｙ超伝
導材料で形成したＭＯ３ＦＢＴ表面に、本発明にしたが
って５ｉＯＮ保護膜を形成した例を示す断面図、および
第５図は、電極部分をＹＢａＣｕＯｔ−１１超伝導材料
で形成したＭＯ３ＦＥＴ表面に、本発明にしたがって、
ＳｌＯおよびＳｉＮの保護膜を形成した例を示す断面図
である。
１・・・ＭｇＯ基板、
２−ＹＢａＣｕＯｔ−ｘ超伝導膜、
３・・・ＳｉＮ保護膜、 ４・・・５ｉＯＮ保護膜
、５・・・ＳｉＯ保護膜、 ６・・・ＳｉＮ保護膜
、１０．１０’・・・ソース電極、
２０．２０’・・・ドレイン電極、
３０．３０’・・・ゲート電極。Figure 1 is a graph showing an example of the influence of plasma electron density (ne) on the etching rate (E, R,) of the protective film, and Figure 2 is the etching rate (IE, R,) of the protective film.
FIG. 3 is a graph showing an example of the influence of plasma electron temperature (Te) on
The figure is a cross-sectional view showing an example in which a 5iON protective film is formed according to the present invention on the surface of a MO3FBT whose electrode portion is made of La2-x 5rXCu04-y superconducting material, and FIG. According to the present invention, on the surface of MO3FET formed of superconducting material,
FIG. 3 is a cross-sectional view showing an example in which protective films of SlO and SiN are formed. 1...MgO substrate, 2-YBaCuOt-x superconducting film, 3...SiN protective film, 4...5iON protective film, 5...SiO protective film, 6...SiN protective film, 10. 10'... Source electrode, 20.20'... Drain electrode, 30.30'... Gate electrode.
Claims (1)
酸化物超伝導体層の全面に電子サイクロトロン共鳴によ
るプラズマ化学気相成長によって保護膜を形成すること
を特徴とする酸化物超伝導体の保護膜形成方法。1. An oxide superconductor layer characterized by forming an oxide superconductor layer on a substrate, and then forming a protective film on the entire surface of the oxide superconductor layer by plasma chemical vapor deposition using electron cyclotron resonance. Method for forming a protective film on a conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1009777A JPH02192402A (en) | 1989-01-20 | 1989-01-20 | Formation of protective film for oxide superconducting material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1009777A JPH02192402A (en) | 1989-01-20 | 1989-01-20 | Formation of protective film for oxide superconducting material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02192402A true JPH02192402A (en) | 1990-07-30 |
Family
ID=11729674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1009777A Pending JPH02192402A (en) | 1989-01-20 | 1989-01-20 | Formation of protective film for oxide superconducting material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02192402A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5646095A (en) * | 1991-06-18 | 1997-07-08 | International Business Machines Corporation | Selective insulation etching for fabricating superconductor microcircuits |
| JP2012531741A (en) * | 2009-06-26 | 2012-12-10 | 東京エレクトロン株式会社 | Plasma processing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6454774A (en) * | 1987-08-26 | 1989-03-02 | Matsushita Electric Industrial Co Ltd | Manufacture of superconducting device |
| JPH01179779A (en) * | 1988-01-11 | 1989-07-17 | Sumitomo Electric Ind Ltd | Method for protecting multi-ply oxide superconductor |
| JPH01246132A (en) * | 1988-03-25 | 1989-10-02 | Matsushita Electric Ind Co Ltd | Production of thin film superconductor |
| JPH01275406A (en) * | 1988-04-26 | 1989-11-06 | Matsushita Electric Ind Co Ltd | Method for manufacturing superconductor structures |
-
1989
- 1989-01-20 JP JP1009777A patent/JPH02192402A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6454774A (en) * | 1987-08-26 | 1989-03-02 | Matsushita Electric Industrial Co Ltd | Manufacture of superconducting device |
| JPH01179779A (en) * | 1988-01-11 | 1989-07-17 | Sumitomo Electric Ind Ltd | Method for protecting multi-ply oxide superconductor |
| JPH01246132A (en) * | 1988-03-25 | 1989-10-02 | Matsushita Electric Ind Co Ltd | Production of thin film superconductor |
| JPH01275406A (en) * | 1988-04-26 | 1989-11-06 | Matsushita Electric Ind Co Ltd | Method for manufacturing superconductor structures |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5646095A (en) * | 1991-06-18 | 1997-07-08 | International Business Machines Corporation | Selective insulation etching for fabricating superconductor microcircuits |
| JP2012531741A (en) * | 2009-06-26 | 2012-12-10 | 東京エレクトロン株式会社 | Plasma processing method |
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