JPH0219461A - sputtering equipment - Google Patents
sputtering equipmentInfo
- Publication number
- JPH0219461A JPH0219461A JP63169424A JP16942488A JPH0219461A JP H0219461 A JPH0219461 A JP H0219461A JP 63169424 A JP63169424 A JP 63169424A JP 16942488 A JP16942488 A JP 16942488A JP H0219461 A JPH0219461 A JP H0219461A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- shield member
- particles
- spattered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はスパッタ装置に関し、特にスパッタ用ターゲッ
ト、カソードの構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a sputtering apparatus, and particularly to the structure of a sputtering target and a cathode.
従来の技術
金属や絶縁物の成膜方法として、ＤＣスパッタ、ＲＦス
パッタ法は公知である。このような従来のスパッタ用カ
ソードの構造を第２図で説明する。BACKGROUND OF THE INVENTION DC sputtering and RF sputtering are well-known methods for forming films of metals and insulators. The structure of such a conventional sputtering cathode will be explained with reference to FIG.
１はスパッタ用ターゲット、２はシールド部材、３はバ
ッキングプレート、４は永久磁石Ｎ極、５は永久磁石Ｓ
極、６はＯリング、７はスパッタ用ターゲットを接合し
ているバッキングプレート３の支持台、８はバッキング
プレートを支持台に固定するためのネジ、９はスパッタ
領域、１０はシールド部材の開口部、１１はスパッタ用
電源である。1 is a sputtering target, 2 is a shield member, 3 is a backing plate, 4 is a permanent magnet N pole, 5 is a permanent magnet S
6 is an O-ring, 7 is a support for the backing plate 3 to which the sputtering target is joined, 8 is a screw for fixing the backing plate to the support, 9 is a sputtering area, and 10 is an opening in the shield member. , 11 is a sputtering power source.
第２図の構成において実際にスパッタする方法を説明す
る。スパッタ装置のチャンバー内を不活性ガス例えばＡ
ｒガスの雰囲気にし、ターゲットの上面は永久磁石４，
５によって磁界をかけておき、スパッタ用ターゲットに
負の電圧、パワーを印加すると、ターゲット上面よりタ
ーゲットの粒子が飛び出し、スパッタが成される。その
飛び出した粒子が、ターゲット１の上方に設置しである
基板に付着し、成膜が成される。A method of actually performing sputtering in the configuration shown in FIG. 2 will be explained. The chamber of the sputtering device is filled with an inert gas such as A.
The atmosphere is r gas, and the top surface of the target is a permanent magnet 4,
When a magnetic field is applied by 5 and a negative voltage and power are applied to the sputtering target, target particles fly out from the upper surface of the target and sputtering is performed. The ejected particles adhere to a substrate placed above the target 1, and a film is formed.
発明が解決しようとする課題
ところが、従来のスパッタ用ターゲット１とシールド部
材２の配置を用いた場合、ターゲット１から飛び出した
粒子がシールド部材の開口部１０付近に付着することに
なる。Problem to be Solved by the Invention However, when the conventional arrangement of the sputtering target 1 and the shield member 2 is used, particles ejected from the target 1 end up adhering to the vicinity of the opening 10 of the shield member.
この場合、シールド部材の開口部１０付近への粒子の付
着が進めば、付着した粒子がシールド部材２より脱落し
、ターゲツト面に落ち良質なスパッタ膜が得られなくな
る。あるいは、金属材料のスパッタ用ターゲットであれ
ば、ターゲット上面とターゲット上面を覆っている部分
のシールド部材の下面に飛び出した粒子の屑が介在し、
前記飛び出した粒子の屑がターゲットとシールド部材の
両方に接触すれば異常放電が生じるという問題点があっ
た。In this case, as the particles continue to adhere to the vicinity of the opening 10 of the shield member, the adhered particles fall off from the shield member 2 and fall onto the target surface, making it impossible to obtain a good quality sputtered film. Alternatively, in the case of a sputtering target made of a metal material, there may be particles scattered on the upper surface of the target and the lower surface of the shield member covering the upper surface of the target.
There is a problem in that if the ejected particle debris comes into contact with both the target and the shield member, abnormal discharge occurs.
本発明は、かかる点に鑑みてなされたもので、シールド
部材開口部１０への飛び出した粒子の付着を防止、もし
くは極力少なくし、良質な膜、及び異常放電が発生しな
いスパッタ用ターゲット、カソードを提供することを目
的としている。The present invention has been made in view of the above points, and provides a sputtering target and cathode that prevents or minimizes the adhesion of ejected particles to the shield member opening 10, and provides a high-quality film and a sputtering target and cathode that do not cause abnormal discharge. is intended to provide.
課題を解決する為の手段
本発明は、上記課題を解決する為、スパッタ用ターゲッ
トの上面の外周全周にわたって段差を設けたターゲット
の段差部に、一定の間隔をもって係合するようシールド
部材を設け、前記シールド部材の上面が、前記ターゲッ
トの上面と面一あるいは前記ターゲットの上面より低く
構成するものである。Means for Solving the Problems In order to solve the above problems, the present invention provides a method in which a shield member is provided so as to be engaged at a constant interval with a stepped portion of a sputtering target, which is provided with a step along the entire outer circumference of the upper surface of a sputtering target. The upper surface of the shield member is flush with the upper surface of the target or is lower than the upper surface of the target.
作用 この技術的手段による作用は次の様になる。action The effect of this technical means is as follows.
シールド部材がターゲット上面を覆わず、かつ、シール
ド部材の上面がターゲットの上面と面一あるいはターゲ
ットの上面より低く構成している為、ターゲットから飛
び出した粒子のシールド部材への付着は防止、あるいは
極めて少なくすることができるので、ターゲット上への
膜層の落下がなくなり、又、異常放電の発生もなくなり
、長期間良質で安定な成膜が可能となる。Since the shield member does not cover the upper surface of the target and the upper surface of the shield member is flush with or lower than the upper surface of the target, it is possible to prevent particles flying from the target from adhering to the shield member, or to prevent particles from adhering to the shield member. Since the amount can be reduced, the film layer does not fall onto the target, and abnormal discharge does not occur, making it possible to form a high-quality and stable film for a long period of time.
実施例
以下、本発明の一実施例を図面に基づいて説明する。第
１図は、本発明の一実施例におけるスパッタ装置の断正
面図である。EXAMPLE Hereinafter, an example of the present invention will be described based on the drawings. FIG. 1 is a sectional front view of a sputtering apparatus in an embodiment of the present invention.
第１図において、３バツキングプレート上にスパッタタ
ーゲット１に接合されており、このバッキングプレート
３はＯリング６を介して支持台１にネジ８で固定されて
いる。また、スパッタ領域を限定するためのシールド部
材２がスパッタ用ターゲット１の上面の外周全周にわた
って段差を設けたターゲットの段差部に約２１１ＩＩｌ
の一定の間隔をもって係合しており、シールド部材２の
上面が、スパッタ用ターゲット１の上面と面一あるいは
スパッタ用ターゲット１の上面より低く構成しである。In FIG. 1, a sputter target 1 is bonded on three backing plates, and this backing plate 3 is fixed to a support base 1 with screws 8 via an O-ring 6. In addition, the shield member 2 for limiting the sputtering area is placed on the step portion of the sputtering target 1, which is provided with a step over the entire outer circumference of the upper surface of the sputtering target 1.
The upper surface of the shield member 2 is flush with the upper surface of the sputtering target 1 or is lower than the upper surface of the sputtering target 1 .
４．５は永久磁石のＮ極とＳ橿であり、スパッタ用ター
ゲット１の上面に磁界を発生させるものである。９はス
パッタ領域で１０はシールド部材の開口部である。１１
はスパッタ用の電源である。4.5 is the N pole and S pole of a permanent magnet, which generate a magnetic field on the upper surface of the sputtering target 1. 9 is a sputtering region, and 10 is an opening in the shield member. 11
is the power supply for sputtering.
上記の構成において、スパッタ装置のチャンバー内を不
活性ガス例えばＡｒガスの雰囲気にし、スパッタ用ター
ゲット１の上面を４．５の永久磁石で磁界をかけ、スパ
ッタ用ターゲット１に１１のスパッタ用電源によって負
の電圧、パワーを印加すると、スパッタ用ターゲットｌ
の上面よりターゲットの粒子が飛び出したスパッタが成
される。In the above configuration, the inside of the chamber of the sputtering apparatus is made into an atmosphere of an inert gas, for example, Ar gas, a magnetic field is applied to the upper surface of the sputtering target 1 by a 4.5 mm permanent magnet, and the sputtering target 1 is powered by an 11 sputtering power source. When applying negative voltage and power, the sputtering target l
Sputtering is created in which target particles fly out from the top surface of the target.
ターゲット上面から飛び出した粒子は放射状に上方に向
かって飛び出すがシールド部材２の上面が、スパッタ用
ターゲット１の上面と面一あるいはスパッタ用ターゲッ
ト１の上面より低く構成しである為、飛び出した粒子が
シールド部材２に付着することはない、あるいは付着し
ても極めて少量である。Particles that fly out from the top surface of the target fly radially upward, but because the top surface of the shield member 2 is flush with the top surface of the sputtering target 1 or is configured to be lower than the top surface of the sputtering target 1, the particles that fly out are It does not adhere to the shield member 2, or even if it does, it is only in a very small amount.
例えば、ターゲットの材料によっては、付着力の強いも
の、弱いものがあるが、例えば付着力の弱い５ｉｎｔや
ＺｎＳ等の誘電体は、量産時に大きな問題となるが本発
明の構成を導入する時により容易に解決することができ
る。For example, depending on the material of the target, some have strong adhesion and others have weak adhesion. For example, dielectric materials such as 5int and ZnS, which have weak adhesion, pose a big problem during mass production, but when introducing the structure of the present invention, It can be easily solved.
発明の効果
以上述べてきたように、本発明によれば、簡易な構成で
シールド部材へのスパッタ粒子の付着がな（なるもしく
は、極めて少なくなるのでシールド部材開口部から膜層
が脱落しターゲット上に乗ることがなく、金属物のター
ゲットの場合、膜層でターゲットとシールド部材が接触
する事による異常放電がなくなる。つまり、膜質が良好
で長時間安定な成膜を行うことができるターゲット、カ
ソードを提供することができる。Effects of the Invention As described above, according to the present invention, adhesion of sputtered particles to the shield member is eliminated (or extremely reduced) with a simple configuration, so that the film layer does not fall off from the opening of the shield member and onto the target. In the case of a metal target, there will be no abnormal discharge due to contact between the target and the shield member in the film layer.In other words, the target and cathode have good film quality and can perform stable film formation for a long time. can be provided.
第１図は、本発明の一実施例におけるスパッタ装置の断
正面図、第２図は従来のスパッタ装置の断正面図である
。
■・・・・・・スパッタ用ターゲット、２・旧・・シー
ルド部材、３・・・・・・バッキングプレート。
代理人の氏名 弁理士 粟野重孝 はか１名○
永久≧石ＳｉFIG. 1 is a sectional front view of a sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional front view of a conventional sputtering apparatus. ■・・・Sputtering target, 2. Old shield member, 3. Backing plate. Name of agent: Patent attorney Shigetaka Awano Haka 1 person ○ Permanent ≧ Stone Si
Claims (2)
て中央部が凸になるような段差を設けたターゲットの段
差部に、一定の間隔をもって係合するようシールド部材
を設けてなるスパッタ装置。(1) A sputtering device in which a shield member is provided so as to be engaged at a constant interval with a stepped portion of a sputtering target, which has a stepped portion having a convex central portion along the entire outer circumference of the upper surface of the sputtering target.
、あるいは前記ターゲットの上面より低く構成してなる
請求項１記載のスパッタ装置。(2) The sputtering apparatus according to claim 1, wherein the upper surface of the shield member is flush with the upper surface of the target or lower than the upper surface of the target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63169424A JPH0219461A (en) | 1988-07-07 | 1988-07-07 | sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63169424A JPH0219461A (en) | 1988-07-07 | 1988-07-07 | sputtering equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0219461A true JPH0219461A (en) | 1990-01-23 |
Family
ID=15886337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63169424A Pending JPH0219461A (en) | 1988-07-07 | 1988-07-07 | sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0219461A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03274265A (en) * | 1990-03-26 | 1991-12-05 | Anelva Corp | Cathode and target for sputtering system |
| US5167789A (en) * | 1991-03-20 | 1992-12-01 | Leybold Aktiengesellschaft | Apparatus for coating a substrate |
| US6045670A (en) * | 1997-01-08 | 2000-04-04 | Applied Materials, Inc. | Back sputtering shield |
| JP2013007109A (en) * | 2011-06-27 | 2013-01-10 | Ulvac Japan Ltd | Target for sputtering, and method for sputtering using the same |
-
1988
- 1988-07-07 JP JP63169424A patent/JPH0219461A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03274265A (en) * | 1990-03-26 | 1991-12-05 | Anelva Corp | Cathode and target for sputtering system |
| US5167789A (en) * | 1991-03-20 | 1992-12-01 | Leybold Aktiengesellschaft | Apparatus for coating a substrate |
| US6045670A (en) * | 1997-01-08 | 2000-04-04 | Applied Materials, Inc. | Back sputtering shield |
| JP2013007109A (en) * | 2011-06-27 | 2013-01-10 | Ulvac Japan Ltd | Target for sputtering, and method for sputtering using the same |
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