JPH021992A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPH021992A JPH021992A JP63144022A JP14402288A JPH021992A JP H021992 A JPH021992 A JP H021992A JP 63144022 A JP63144022 A JP 63144022A JP 14402288 A JP14402288 A JP 14402288A JP H021992 A JPH021992 A JP H021992A
- Authority
- JP
- Japan
- Prior art keywords
- insulating member
- electrode film
- strip
- shaped
- belt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（０産業上の利用分野
本毎明は太陽電池等の光起電力装置のＦＡ遣方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (0) Industrial Application Field This invention relates to a method for FA operation of a photovoltaic device such as a solar cell.
（ｎｌ ＩＸ＝米の技術
−最に光起電力装置は、所定の電力を得るため、複数の
光起電力素子を直列接続している。(nl IX = American technology - Finally, a photovoltaic device connects a plurality of photovoltaic elements in series in order to obtain a predetermined electric power.
第７図乃至第１０図は特開昭６２−３３４７７号公報に
示された従来の光起電力装置の製造方法を示す断面図で
ある。7 to 10 are cross-sectional views showing a conventional method of manufacturing a photovoltaic device disclosed in Japanese Patent Application Laid-Open No. 62-33477.
第７図に示す如く、ガラス等の絶縁性かつ透光性の基板
（１１）上に第１電極膜としての透明電極膜を被着した
１褒、レーザビーム（ＬＩ３）を照射して紙面垂直方向
に分離溝（ａｂ）を形成することにより、個別の透明型
ｆｓＩｆｉ（１２ａ）（１２ｂ）か分雛形成される。As shown in Fig. 7, a transparent electrode film as a first electrode film is deposited on an insulating and translucent substrate (11) such as glass, and a laser beam (LI3) is irradiated to make the film perpendicular to the paper surface. By forming separation grooves (ab) in the direction, separate transparent molds fsIfi (12a) (12b) are formed.
次に、第８図に示す如く、透明電極膜（１２ａ）シリコ
ン￥の半導体に活性層（１５）及び第２電極膜（１３）
及び帯状絶縁部材（！４）とχ・を向する位置で半導体
光活性層（１５）及び金属電極膜（１６）の表面から第
１及び第２のレーザビーム（ＬＢＩ）（ＬＢ２）を照射
する。これにより、帯状導電部材（１３）と対向する位
置では、金属型（ｉＪＩ！（１６ｉ及び半導体光活性Ｉ
Ｐ１（＋５１が溶融して帯状導電部材（１３）と当接し
て電気的に連なり、また、帯状絶縁部材（１４）と対向
する位置では、金属電極膜（１６）及び半導体光活性Ｊ
Ａ（１５）が除去される。Next, as shown in FIG. 8, a transparent electrode film (12a), an active layer (15) and a second electrode film (13) are formed on the silicon semiconductor.
First and second laser beams (LBI) (LB2) are irradiated from the surfaces of the semiconductor photoactive layer (15) and the metal electrode film (16) at positions facing χ and the band-shaped insulating member (!4). . As a result, the metal mold (iJI! (16i) and the semiconductor photoactive I
P1 (+51) is melted and comes into contact with the strip-shaped conductive member (13) and is electrically connected, and at a position facing the strip-shaped insulating member (14), the metal electrode film (16) and the semiconductor photoactive J
A(15) is removed.
材（１３）及び５ｉｎ２ベースト″Ｉｒ＝念用いた帯状
絶縁部材（１４）が焼成して並列に形成される。The material (13) and the 5in2 base plate (Ir) are formed in parallel by firing the strip-shaped insulating member (14).
更に、第９図に示す如く、帯状導電部材（１３）、帯状
絶縁部材（１４）を含む透明電極膜（１２ａ）（１２ｂ
）の表面、並びに分Ｉ４講（ａｂ）に露出する基板（１
１）の表面にわたる全面にアモルファス材（１３）を止
して他方の光電変（Ｑ領域（１７ｂ）の透明電極１ｆ５
Ｉ（１２ｂ ）と接続され、直列接続された光電変１１
２＋Ｍ域（１７ａ＞（１７ｂ）が形成される。Furthermore, as shown in FIG. 9, transparent electrode films (12a) (12b) including a strip-shaped conductive member (13) and a strip-shaped insulating member (14)
), as well as the substrate (1
1), the amorphous material (13) is applied to the entire surface of the photoelectric transformer (transparent electrode 1f5 of the Q region (17b)
I (12b) and the photoelectric transformer 11 connected in series
A 2+M region (17a>(17b)) is formed.
（ハ）弁明が解決しようとする課題
ところで、上述の如き方法にあっては、第７］図に示−
４゛如くレーザビーム（ＬＩ３＞を用いた透明型ｆＦＩ
ｆｉ（１２ａ＞（１２ｂ）の形成時において、分離溝（
ａｂ）内に透明電極膜材料の飛散物（１８）が多数残留
する、この飛散物（１８）は帯状導電部材（１３）及び
帯状絶縁部材（１４）の焼成形成時に軟化して相互に接
触し、分雛したはずの透明電極膜（１２ａ＞（１２ｂ）
が電気的に接続させることがあり、特性低下の要因の１
つとなっている。(c) Problems to be solved by the defense By the way, in the method described above, as shown in Fig.
Transparent fFI using laser beam (LI3) like 4゛
When forming fi (12a>(12b)), the separation groove (
ab) A large number of scattered objects (18) of the transparent electrode film material remain in the interior of the ab), and these scattered objects (18) soften and come into contact with each other when the band-shaped conductive member (13) and the band-shaped insulating member (14) are fired and formed. , the transparent electrode film that should have been split (12a>(12b)
may cause electrical connection, which is one of the causes of characteristic deterioration.
It is one.
（ニ）課題を解決するための手段
本発明による光起電力装置の第１の製造方法は、基板の
絶縁表面に第１の帯状絶縁部材を形成する工程と、この
第１の帯状絶縁部材の表面を含んで上記基板の絶縁表面
上に第１電陛膜を形成する工程と、上記第１電極膜上に
一１上記第１の帯状絶縁部材と近接して第２の帯状絶縁
部材及びこれと第１の帯状絶縁部材との間に位置する帯
状導電部材を・１Ｕ列形成する工程と、上記第１電極１
Ｍを上記第１の帯状絶縁部材と対応する位置で分雛する
工程と、上記帯状導電部材及び第２の帯状絶縁部材のに
面を含んて上記第１電極膜の表面に半導体光と第し；Ｉ
ｃ極膜とを−に気的に接続すると共に上記第２の帯状絶
縁部材と対応する位置で上記第２電横膜及び半導体光活
性層を分雅する工程とを備えたことを特徴とする。(d) Means for Solving the Problems The first method for manufacturing a photovoltaic device according to the present invention includes a step of forming a first band-shaped insulating member on an insulating surface of a substrate, and a step of forming a first band-shaped insulating member on an insulating surface of a substrate. forming a first electrically conductive film on the insulating surface of the substrate including the surface; and forming a second electrically conductive film on the first electrode film in close proximity to the first insulating member; forming a 1U row of strip-shaped conductive members located between the first electrode 1 and the first strip-shaped insulating member;
splitting M at a position corresponding to the first strip-shaped insulating member, and applying a semiconductor light to the surface of the first electrode film, including the surfaces of the strip-shaped conductive member and the second strip-shaped insulating member. ;I
It is characterized by comprising the step of electrically connecting the c-pole film to - and separating the second electrically conductive film and the semiconductor photoactive layer at a position corresponding to the second band-shaped insulating member. .
また、第２の製造方法は、基板の絶縁表面に第１の帯状
絶縁部材及び帯状導電部材を形成する工程と、これら第
１の帯状絶縁部材及び帯状導電部材のに面を含んで上記
基板の絶縁表面」二に第１電（重膜を形成する工程と、
上記第１電極膜上にＨ記帯状導電部材と近接してこれを
第１の帯状絶縁部材と共に挾むように第２の帯状絶縁部
材を形成する工程と、上記第１電極膜を上記第１の帯状
絶縁部材とｋ・［応する位置で分離する工程と、」−２
第２の帯状絶縁部材の表面を含んで一ヒ記第１の電極膜
ゾＪｋ面に半導体光活性層及び第２電極膜を積層形成−
ｒる工程と、上記帯状導電部材と対応する位置で上記第
２電優膜と第１電極膜とを電気的に接続すると共に上記
第２の帯状絶縁部材と対応する位置でＦ、２第２電極膜
及び半導体光活性層を分離する工程とを（Ｍえたことを
特徴とする。The second manufacturing method also includes a step of forming a first strip-shaped insulating member and a strip-shaped conductive member on an insulating surface of the substrate, and a step of forming a first strip-shaped insulating member and a strip-shaped conductive member on the insulating surface of the substrate. a step of forming a first electrical (heavy film) on the insulating surface;
forming a second band-shaped insulating member on the first electrode film in close proximity to the band-shaped conductive member H and sandwiching it together with the first band-shaped insulating member; The step of separating the insulating member and the corresponding position, ”-2
A semiconductor photoactive layer and a second electrode film are laminated on the Jk surface of the first electrode film including the surface of the second strip-shaped insulating member.
electrically connecting the second electrically conductive film and the first electrode film at a position corresponding to the strip-shaped electrically conductive member; The method is characterized in that it includes a step of separating the electrode film and the semiconductor photoactive layer.
（ホ）作 用
本発明によれば、第１の帯状絶縁部材か第１電極膜の分
離を容易なものとし、また、第２の帯状絶縁部材は第２
電極膜の分離に際し、第２電極膜と第１電極膜との不所
望な短絡を防止する。(e) Function According to the present invention, the first strip-shaped insulating member or the first electrode film can be easily separated, and the second strip-shaped insulating member can be separated from the second strip-shaped insulating member.
When separating the electrode films, an undesired short circuit between the second electrode film and the first electrode film is prevented.
更に、これら帯状絶縁部材及び帯状導電部材は、第１電
極膜の形成に先立って行なわれ、これら部材の熱処理に
よる悪影響が第１電極ｌ模に及ばない９（へ）実施例
第１図乃至第５図は本弁明の第１の製造方法を工程別に
示す断面図である。Furthermore, these strip-shaped insulating members and strip-shaped conductive members are formed prior to the formation of the first electrode film, so that the heat treatment of these members does not have any adverse effects on the first electrode. FIG. 5 is a cross-sectional view showing each step of the first manufacturing method according to the present invention.
第１図に示す工程では、ガラス、耐熱プラスチック等の
基板（１）の表面に第１の帯状絶縁部材（２）か並列形
成される。断る第１の帯状絶縁部材（２）は５ｉｎ２ペ
ーストやその他の無機材料ペーストをスクリーン印刷手
法により所定の箇所にバターニングされた後、約５５０
−〇の温度にて焼成される。更に、第１の帯状絶縁部材
（２）の表面を象んてＶ Ｗ、 （ｌ ｉの略全面に、
ＳｎＯ，、、Ｉｎ２Ｏ，、Ｉ Ｔ ＯＹの透光性導電酸
化物（ＴＣＯ＞から成る第１電極＋１５！ （３）が形
成される９第２１７１に示す工程では、第１電極膜（３
）上に、第１の帯状絶縁部材（２）と近接して第２の帯
状絶縁部材（・１）及びこれと第１の帯状絶縁部材（２
）との間に位置する帯状導電部材（５）が並列形成され
る。第２の帯状絶縁部材ｊ、ｌ）は、上述の第１の帯状
絶縁部材（２）と同様に形成され、また帯状導電部材（
５）は、Ａｇペーストやその池の金属ペーストから成つ
、Ｌ述Ｊ＋５ｉｏｚペーストと同様にス２り一ン印刷手
法によりバターニングされて約５５０°Ｃの温度て焼成
される、
第３１４に示す工程ては、第１の帯状絶縁部材（２：Ｉ
のに面Ｆに位置−（る第１電僅膜（３）十に第１のレー
ザビーム（ＬＢ、） か照射され、第１電極膜（３）
はｆｌＡＩ別の第１電％膜（３ａ）（３ｂ）に分シリさ
れる。In the process shown in FIG. 1, first strip-shaped insulating members (2) are formed in parallel on the surface of a substrate (1) made of glass, heat-resistant plastic, or the like. The first strip-shaped insulating member (2) is patterned with 5in2 paste or other inorganic material paste at predetermined locations using a screen printing method, and then is approximately 550mm thick.
- Baked at a temperature of 〇. Furthermore, approximately the entire surface of V W, (l i) is applied to the surface of the first strip-shaped insulating member (2),
In the step shown in 9th 2171, in which a first electrode made of a transparent conductive oxide (TCO>) of SnO, In2O, IT OY is formed, the first electrode film (3) is formed.
), a second strip-shaped insulating member (.1) is disposed adjacent to the first strip-shaped insulating member (2), and a second strip-shaped insulating member (2) is attached thereto.
) are formed in parallel. The second strip-shaped insulating members j, l) are formed in the same manner as the above-described first strip-shaped insulating member (2), and the strip-shaped electrically conductive members (
5) is made of Ag paste or other metal paste, and is buttered by a two-strip printing method and fired at a temperature of about 550°C, similar to the J+5ioz paste, as shown in No. 314. In the process, the first strip-shaped insulating member (2: I
The first electrode film (3) located on the plane F is irradiated with the first laser beam (LB,), and the first electrode film (3)
is divided into the first electrically conductive films (3a) and (3b) for each flAI.
第４図に示す工程では、第２の帯状絶縁部材（４）およ
び帯状導電部材（５）を含んで第１電僅膜（３ａ）（３
ｂ）の表面に、内部に膜面に平行なｐｉｎ、ｐｎ接合等
の接合を皓えたａ−３ｉｙＦ、のアモルファスシリコン
系の半導体光活性層（６）が形成され、更に、半導体光
活性Ｊｔ４＋６１上に、Ａｇ等の金属から成る第２電極
膜（７）が積層形成される。In the step shown in FIG. 4, the first electrically conductive film (3a) (3
On the surface of b), an a-3iyF amorphous silicon-based semiconductor photoactive layer (6) with junctions such as pin and pn junctions parallel to the film surface is formed inside, and a semiconductor photoactive layer (6) is formed on the semiconductor photoactive Jt4+61. A second electrode film (7) made of a metal such as Ag is laminated thereon.
最後に、第５図に示す工程では、第２の帯状絶縁部材（
４）及び帯状導電部材（う）の表面上に位置する半導体
光活性層（６）及び第２電極膜（７）の積ノ一部分に夫
々適宜のエネルギー密度を有する第２、第３のレーザビ
ーム（ＬＢ２）（ＬＢ、）が照射される。これによって
、第２グ）帯状絶縁部材＋４１上の積層部分は除去され
、半導体光活性層（６）及び第２電＋ｙ４ＷＡｆ ７
）は、夫々個別の半導体光活性層（６ａ）（６ｂ）及び
第２電極膜（７ａ）＜７ｂ）に分別される。また、帯状
絶縁部材（５）上の積層し
部分は溶笹搏で帯状導電部材（５）と当接して電気的に
連なる。Finally, in the step shown in FIG. 5, the second strip-shaped insulating member (
4) and second and third laser beams having appropriate energy densities, respectively, on the cross section of the semiconductor photoactive layer (6) and the second electrode film (7) located on the surface of the strip-shaped conductive member (U). (LB2) (LB, ) is irradiated. As a result, the laminated portion on the second g) band-shaped insulating member +41 is removed, and the semiconductor photoactive layer (6) and the second electrically insulating member +41 are removed.
) are separated into separate semiconductor photoactive layers (6a) (6b) and second electrode films (7a)<7b). Further, the laminated portion on the strip-shaped insulating member (5) is made of molten bamboo and comes into contact with the strip-shaped conductive member (5) to be electrically connected.
このようにして、半導体光活性層（６ａ）（６ｂ）及び
第２電極膜（７ａ）（７ｂ）の分割と共に第２電極膜（
７ａ）と第１電極膜（３ｂ）との１し気的接続が行なわ
れる。その結果、隣接する光電変ＩＱ ｉｉ域（８ａ
＞ （８ｂ ） ＃’電ｉ的ニ直列接４される。。In this way, the semiconductor photoactive layer (6a) (6b) and the second electrode film (7a) (7b) are divided, and the second electrode film (
7a) and the first electrode film (3b) are electrically connected. As a result, the adjacent photoelectric transformer IQ ii area (8a
> (8b) #' Electrical i is connected in series with 4. .
第６図は本発明の第２グ）製造方法を説明するための断
面図である。FIG. 6 is a sectional view for explaining the second g) manufacturing method of the present invention.
断る製造方法では、帯状導電部材（５）が第１電極膜（
３ａ）＜３ｂ）の形成に先立って第１の帯、１ｆ、絶縁
部材（２）と共にＴ−、板（１）トに並列形成さ！こる
点て、第１の製造方法と異なる。In the manufacturing method of refusing, the strip-shaped conductive member (5) is coated with the first electrode film (
Prior to the formation of 3a)<3b), the first band 1f is formed in parallel with the insulating member (2) on the T- plate (1)! This is different from the first manufacturing method in this respect.
（ト）発明の効果
本発明によれは、第１及び第２の帯状絶縁部材、帯状導
電部材の焼成を第１電極膜のバターニングに先）′１．
って行なうので、バターニングの際に生じる飛散物か第
１電極膜の短絡を招くことはない
また。第２４電極膜の分離位置には、第１電極膜との間
に第２の帯状絶縁部材が介在するため、これら電極膜の
短絡は確実に防止される。(G) Effects of the Invention According to the present invention, the first and second band-shaped insulating members and the band-shaped conductive member are fired before the first electrode film is patterned)'1.
Therefore, there is no possibility of short-circuiting of the first electrode film due to flying particles generated during buttering. Since the second band-shaped insulating member is interposed between the 24th electrode film and the first electrode film at the separated position, short-circuiting of these electrode films is reliably prevented.
、：ｌ 、 Ｉ’２１面の簡単な５ｊと明第１図乃至第
５図は本発明の第１の製造方法を工程順に示す断面し］
、第６図は本発明の第２の製造方法を説明するための断
面図、第７図乃至第１Ｕ図はｔｉｅ来σ）製造方法を示
す断面図である。, :l, I'21 plane 5j and bright Figures 1 to 5 are cross sections showing the first manufacturing method of the present invention in the order of steps]
, FIG. 6 is a cross-sectional view for explaining the second manufacturing method of the present invention, and FIGS. 7 to 1U are cross-sectional views showing the tie production method.
（１）・・・基板、（２）・・・第１の帯４１縁部材、
（３ａ）（３ｂ）・・・第１電極膜、（４）・・・第２
の帯状絶縁部材、（５）・・・帯状導電部材、（６ａ＞
（６ｂ＞・・・半導体光活性層、（７ａ＞（７ｂ）・・
・第２電極膜。(1)...Substrate, (2)...First band 41 edge member,
(3a) (3b)...first electrode film, (4)...second electrode film
band-shaped insulating member, (5)... band-shaped conductive member, (6a>
(6b>...semiconductor photoactive layer, (7a>(7b)...
-Second electrode film.
第１図Figure 1
Claims (2)
工程と、この第１の帯状絶縁部材の表面を含んで上記基
板の絶縁表面上に第１電極膜を形成する工程と、上記第
１電極膜上に上記第１の帯状絶縁部材と近接して第２の
帯状絶縁部材及びこれと第１の帯状絶縁部材との間に位
置する帯状導電部材を並列形成する工程と、上記第１電
極膜を上記第１の帯状絶縁部材と対応する位置で分離す
る工程と、上記帯状導電部材及び第２の帯状絶縁部材の
表面を含んで上記第１電極膜の表面に半導体光活性層及
び第２電極膜を積層形成する工程と、上記帯状導電部材
と対応する位置で上記第２電極膜と第１電極膜とを電気
的に接続すると共に上記第２の帯状絶縁部材と対応する
位置で上記第２電極膜及び半導体光活性層を分離する工
程とを備えたことを特徴とする光起電力装置の製造方法
。(1) forming a first strip-shaped insulating member on the insulating surface of the substrate; forming a first electrode film on the insulating surface of the substrate including the surface of the first strip-shaped insulating member; forming a second strip-shaped insulating member in parallel with the first strip-shaped insulating member and a strip-shaped conductive member located between the second strip-shaped insulating member and the first strip-shaped insulating member on the first electrode film; separating one electrode film at a position corresponding to the first strip-shaped insulating member; and adding a semiconductor photoactive layer and a semiconductor photoactive layer to the surface of the first electrode film, including the surfaces of the strip-shaped conductive member and the second strip-shaped insulating member. a step of laminating a second electrode film, and electrically connecting the second electrode film and the first electrode film at a position corresponding to the strip-shaped conductive member and at a position corresponding to the second strip-shaped insulating member; A method for manufacturing a photovoltaic device, comprising the step of separating the second electrode film and the semiconductor photoactive layer.
電部材を形成する工程と、これら第１の帯状絶縁部材及
び帯状導電部材の表面を含んで上記基板の絶縁表面ｈに
第１電極膜を形成する工程と、上記第１電極膜上に上記
帯状導電部材と近接してこれを第１の帯状絶縁部材と共
に挟むように第２の帯状絶縁部材を形成する工程と、上
記第１電極膜を上記第１の帯状絶縁部材と対応する位置
で分離する工程と、上記第２の帯状絶縁部材の表面を含
んで上記第１電極膜の表面に半導体光活性層及び第２電
極膜を積層形成する工程と、上記帯状導電部材と対応す
る位置で上記第２電極膜と第１電極膜とを電気的に接続
すると共に上記第２の帯状絶縁部材と対応する位置で上
記第２電極膜及び半導体光活性層を分離する工程とを備
えたことを特徴とする光起電力装置の製造方法。(2) forming a first band-shaped insulating member and a band-shaped conductive member on the insulating surface of the substrate, and forming a first electrode on the insulating surface h of the substrate including the surfaces of the first band-shaped insulating member and the band-shaped conductive member; a step of forming a second strip-shaped insulating member on the first electrode film in close proximity to the strip-shaped electrically conductive member so as to sandwich it together with the first strip-shaped insulating member; separating the film at a position corresponding to the first band-shaped insulating member, and laminating a semiconductor photoactive layer and a second electrode film on the surface of the first electrode film, including the surface of the second band-shaped insulating member. the second electrode film and the first electrode film are electrically connected at a position corresponding to the strip-shaped conductive member, and the second electrode film and the first electrode film are electrically connected at a position corresponding to the second strip-shaped insulating member; A method for manufacturing a photovoltaic device, comprising the step of separating a semiconductor photoactive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63144022A JP2598967B2 (en) | 1988-06-10 | 1988-06-10 | Method for manufacturing photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63144022A JP2598967B2 (en) | 1988-06-10 | 1988-06-10 | Method for manufacturing photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH021992A true JPH021992A (en) | 1990-01-08 |
| JP2598967B2 JP2598967B2 (en) | 1997-04-09 |
Family
ID=15352505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63144022A Expired - Fee Related JP2598967B2 (en) | 1988-06-10 | 1988-06-10 | Method for manufacturing photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2598967B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991017572A1 (en) * | 1990-05-07 | 1991-11-14 | Canon Kabushiki Kaisha | Solar cell |
| JPH04212476A (en) * | 1990-04-05 | 1992-08-04 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| JP2805394B2 (en) * | 1990-05-07 | 1998-09-30 | キヤノン株式会社 | Solar cell |
| CN102449778A (en) * | 2009-03-31 | 2012-05-09 | Lg伊诺特有限公司 | Solar cell and manufacturing method thereof |
-
1988
- 1988-06-10 JP JP63144022A patent/JP2598967B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04212476A (en) * | 1990-04-05 | 1992-08-04 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| WO1991017572A1 (en) * | 1990-05-07 | 1991-11-14 | Canon Kabushiki Kaisha | Solar cell |
| JP2805394B2 (en) * | 1990-05-07 | 1998-09-30 | キヤノン株式会社 | Solar cell |
| CN102449778A (en) * | 2009-03-31 | 2012-05-09 | Lg伊诺特有限公司 | Solar cell and manufacturing method thereof |
| JP2012522394A (en) * | 2009-03-31 | 2012-09-20 | エルジー イノテック カンパニー リミテッド | Solar cell and manufacturing method thereof |
| JP2014112711A (en) * | 2009-03-31 | 2014-06-19 | Lg Innotek Co Ltd | Solar cell and method of manufacturing the same |
| US9741884B2 (en) | 2009-03-31 | 2017-08-22 | Lg Innotek Co., Ltd. | Solar cell and method of fabricating the same |
| US9893221B2 (en) | 2009-03-31 | 2018-02-13 | Lg Innotek Co., Ltd. | Solar cell and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2598967B2 (en) | 1997-04-09 |
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