JPH0220121B2 - - Google Patents

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Publication number
JPH0220121B2
JPH0220121B2 JP57207900A JP20790082A JPH0220121B2 JP H0220121 B2 JPH0220121 B2 JP H0220121B2 JP 57207900 A JP57207900 A JP 57207900A JP 20790082 A JP20790082 A JP 20790082A JP H0220121 B2 JPH0220121 B2 JP H0220121B2
Authority
JP
Japan
Prior art keywords
thermistor
thermistor element
temperature
coating layer
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57207900A
Other languages
Japanese (ja)
Other versions
JPS5998501A (en
Inventor
Akio Takami
Toshitaka Matsura
Kazuhisa Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP20790082A priority Critical patent/JPS5998501A/en
Publication of JPS5998501A publication Critical patent/JPS5998501A/en
Publication of JPH0220121B2 publication Critical patent/JPH0220121B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】[Detailed description of the invention]

本発明はガスの影響を受けにくい高温用サーミ
スターに関するものである。 最近内燃機関の排気ガス浄化装置用触媒の過熱
防止装置や排気ガスの酸素センサーの温度補償に
高温用サーミスターが用いられ、300〜1000℃で
用いる高温用サーミスターには安定化ZrO2を主
体とする組成物があつたが、1650℃上の高温焼成
を必要とし、又雰囲気中の酸素分圧によつて抵抗
値が変り易い問題があつた。又M(Alx,Cry
Fez2O4の一般式をもつスピネル系もZrO2と共に
高温焼成を必要とし、高温焼成により埋め込まれ
た電極の白金線が脆弱化しそのため直径0.5mm以
上の太い電極線を必要としサーミスター素子を高
価にする難があつた。これらの欠点を改良し、
1600℃以下で焼成でき、従つて電極線の脆弱化が
少なく0.4mmφ以下の細い電極線が使え、耐久性
良く温度係数の安定したサーミスターを得るた
め、本出願人は先にCr2O3−V2O5−TiO2の三成
分から成る高温用サーミスター組成物を出願した
(特願昭54−110932号、特開昭56−37269号)。し
かしながらこの組成物を使用したサーミスター
は、燃焼に供せられる燃料混合気の空燃比が過濃
(リツチ)状態の時発生するカーボンが該素子の
表面に付着すると、1対の電極以外に表面のカー
ボン膜も電極として作用し、見掛けの電極面積の
増加に伴いサーミスター抵抗が低下するという問
題点を有していた。 またチタニアを主成分とする高温用サーミスタ
ーも知られている。このチタニアは600℃前後の
高温に達すると、チタニア自体が酸素に対して活
性をもつに至り抵抗変化に狂いを生じるという欠
点があつた。そこで特開昭56−84541号、55−
158548号、55−162046号ではチタニア表面にガラ
ス層を設けることを提案している。このチタニア
表面のガラス層はガラスが排ガスを遮断し、チタ
ニアの感ガスによる抵抗変化を阻止する。この結
果チタニアは高温サーミスターとして利用でき
る。しかしガラスとチタニアとの熱膨張係数の不
一致により、熱衝撃によりガラスにクラツクが発
生しやすい。又ガラスが高温で流動し、サーミス
ターの抵抗変化が大きくなつてしまうという問題
点を有している。 そこで本発明者らは上記問題点のない高温用サ
ーミスターにつき鋭意検討の結果、サーミスター
素子の表面に固有抵抗が充分高い絶縁被膜を最外
層として施すことにより上記従来の問題点を一挙
に解消し、しかも正確且つ迅速に温度測定ができ
ることを見い出し本発明を完成した。すなわち本
発明の要旨は、内部に1対の電極線を埋設したサ
ーミスター素子の表面に該サーミスター素子を構
成する材料よりも100倍以上固有抵抗が高い多孔
質被膜層を最外層として設けたことを特徴とする
高温用サーミスターにある。 次に本発明について図面を用いて詳細に説明す
るに、第1図は本発明の高温用サーミスターで用
いるサーミスター素子の1実施例を示すものであ
り、1はサーミスター素子であり、安定化ジルコ
ニウム(ZrO2)、M(Alx,Cry,Fez2O4の一般式
を有するスピネル系等を使用することもできる
が、特開昭56−37269号で本出願人が開示した次
の組成物から成つていることが好ましい。 すなわちその組成物は、(X)Cr2O3−(Y)
V2O5−(Z)TiO2で表わされる第2図の三成分
系組成図において、 X=99.5 Y=0.5 Z=0の点A X=70 Y=30 Z=0の点B X=0.5 Y=30 Z=69.5の点C X=0.5 Y=0.5 Z=99.0の点D を結ぶ線分によつて形成された四角形A,B,
C,Dの面積内の組成又は該組成の100重量部と、
Al2O3,SiO2,CaO,BaO,MgO及びMnO2の中
から選ばれた1種以上が20重量部以下とよりなる
高温用サーミスター組成物である。 2はサーミスター素子1に先端が埋設されてい
る電極線であり、サーミスター素子1の表面には
該サーミスター素子1を構成する材料よりも固有
抵抗が100倍以上高い多孔質被膜層3が最外層と
して設けられている。多孔質被膜層3はこのよう
に固有抵抗が高いので、表面付着のカーボンによ
る電流の表面リークを遮断する効果がある。な
お、この効果をより有効に得るために多孔質被膜
層3の固有抵抗は、サーミスター素子1を構成す
る材料の固有抵抗の1000倍以上が好ましい。 また、図示したサーミスターは、サーミスター
素子1の外側には多孔質被膜層3があるのみなの
で、ガスなどの被測定体からサーミスター素子1
へ、熱がほとんど妨害されずに伝わる。そのた
め、このサーミスターは、被測定体の温度変化に
対し鋭敏に応答する。 更に、多孔質被膜層3は、その多孔質という性
質のためにクラツクが発生しにくい。即ち、熱勾
配が生じ、その結果、その一部分が他の部分より
も多く膨張したとしても、その一部分の膨張のか
なりは、空孔の体積を減少するように起きるた
め、熱勾配による歪みに起因するクラツクが発生
しにくい。 多孔質被膜層3の具体的な材料としては、アル
ミナ、シリカ、フオルステライト、スピネル等の
セラミツクが好ましく、このうちでもアルミナは
固有抵抗、耐熱性が高く、多くのサーミスター素
子1を構成する材料との熱膨張特性とも類似して
おり被膜材として優れている。その厚みは5μ以
上あれば表面のカーボンの影響を除外できる。従
つて、あまり厚くする必要性はなく、500μm以
下で充分である。 多孔質被膜層3は、その厚さと気孔率とによつ
て、発揮しうる電流の表面リーク防止効果とそれ
自身のクラツクの発生しにくさとが影響をうける
が、両者を総合的に勘案すると、アルミナの場
合、10〜400μで、気孔率10〜40%の多孔膜が良
い結果をもたらす。アルミナ以外の他の材料でも
前記表面リークを疎外する膜でさえあれば同様な
範囲が好ましいと考えられる。 サーミスター素子1に多孔質被膜層3を設ける
には例えば次のようにして行なう。 まずサーミスター素子1を構成する材料の粉末
を金型に入れ、電極線2を粉末中に埋設し、それ
らを共に所定形状にプレスして成形する。次に被
膜材を水に水散させてスラリー状として、このス
ラリー中に得られた成形体をデイツプすることに
よつて、成形体表面に被膜材をコーテイングす
る。この場合被膜厚さはデイツプ回数によつて調
節することができる。このような被膜材が被覆さ
れた成形体は、後の工程で焼成されることとなる
が、焼成前の段階では、被膜材は、焼成後に見ら
れるような多孔質となつているわけでない。焼成
によつて、被膜材を構成する粒子が粒成長や粒子
同士の結合を起こし、適度の気孔が形成されて多
孔質となるのである。ただし、被膜材の原料とな
るスラリーの濃度やスラリー中の粒子の大きさ等
を調整することによつて、被膜材の単位体積当り
の粒子の充填率を適宜調整し、焼成後所望の気孔
率の多孔質被膜層3となるようにする。このよう
に被膜材の単位体積当りの粒子の充填率を適宜調
整することが可能な方法であるならば、被膜材の
形成は、スプレー法等種々の方法が利用できる。
次に電気炉等を用いて1350〜1450℃で1〜2時間
焼結するとサーミスター素子1と被膜層3とが同
時に焼成できる。 このようにして被膜層3が設けられたサーミス
ター素子1は、例えば第3図のように耐熱セメン
ト等の接着剤4によりアルミナ等の碍管5に接合
され、該碍管5は主体金具6に取り付けられ、碍
管5の反対端より電極線が外部に導出されて高温
用サーミスターとされる。 上述のように本発明の高温用サーミスターは、
素子表面に固有抵抗の高い多孔質被膜層を設けた
ものである。そのため空燃比が過濃状態の時発生
するカーボンが付着しても表面リークを遮断する
ので電極として作用せず見掛けの電極面積の増加
とならない。 また、本発明のサーミスターは、サーミスター
素子の外側には多孔質被膜層があるのみなので、
ガスなどの被測定体からサーミスター素子へ、熱
がほとんど妨害されずに伝わる。そのため、本発
明のサーミスターは、被測定体の温度変化に対し
鋭敏に応答し、正確且つ迅速な温度測定が可能で
ある。また被測定体の温度の小さな変化や迅速な
変化をも測定可能である。 更に、保護被膜層は、多孔質であるため、熱に
よる膨張のかなりは空孔の体積減少に寄与するの
で、熱歪に基づくクラツクが生じにくい。 本発明の高温用サーミスターを製造するため
に、前記した方法は、素子と多孔質被膜層とを同
時に焼結するものである。従つてサーミスターを
焼成後、あらためて被膜層をコートするような繁
雑な工程は不要であり、また被膜層とサーミスタ
ー母材は同時に焼結が進むので互いに強固に接合
し、使用中被膜層が剥離することがない。 以下に本発明を実験例により更に詳細に説明す
るが、本発明はその要旨を超えない限り以下の実
験例により限定されるものではない。 実験例 Cr2O3 80%(重量%、以下同じ)、TiO2 15%、
V2O5 5%からなるサーミスター組成物を金型に
入れ、0.3φPR線と共に第1図のような形状に粉
末プレスする。 プレス成形体の表面を、Al2O3 92%ホウケイ
酸ガラス 8%、ポリビニルアルコール 3%を
水に分散させたスラリー中に浸し、表面にアルミ
ナ被膜層を付与する。被膜厚みは、デイツプ回数
で制御した。 サーミスター素子及びそれにアルミナ被膜層を
付与したものを、電気炉にて1400℃1時間にて焼
成した。1部のサーミスター素子は比較の為、焼
成後表面に他の絶縁層を被覆した。 サーミスター素子は第3図のように碍管に固定
し、2000c.c.エンジンの排気管中にて空燃比A/F
=11,400℃、10時間にて素子表面にカーボン堆
積物を沈着させた。 各試料のサーミスター素子の抵抗値を230℃±
2℃にて測定した結果を第1表に示す。 なお、被膜層を設けないサーミスター素子の固
有抵抗は約1×10Ω・cmであつた。
The present invention relates to a high temperature thermistor that is not easily affected by gas. Recently, high-temperature thermistors have been used for overheating prevention devices for catalysts in internal combustion engine exhaust gas purification devices and temperature compensation for exhaust gas oxygen sensors, and stabilized ZrO 2 is the main component of high-temperature thermistors used at temperatures between 300 and 1000℃. However, there was a problem in that it required high-temperature firing at 1,650°C or higher, and the resistance value easily changed depending on the oxygen partial pressure in the atmosphere. Also, M(Al x , Cry ,
The spinel system, which has the general formula of Fe z ) 2 O 4, also requires high-temperature firing along with ZrO 2 , and the platinum wire of the embedded electrode becomes brittle due to high-temperature firing, so a thick electrode wire with a diameter of 0.5 mm or more is required. There was a problem in making the elements expensive. Improve these shortcomings,
In order to obtain a thermistor that can be fired at temperatures below 1600°C, has minimal weakening of the electrode wire, allows the use of thin electrode wires of 0.4 mmφ or less, and has good durability and a stable temperature coefficient, the applicant first developed Cr 2 O 3 An application was filed for a high-temperature thermistor composition consisting of the three components -V 2 O 5 -TiO 2 (Japanese Patent Application No. 110932/1982, Japanese Patent Application No. 37269/1983). However, when the thermistor using this composition adheres to the surface of the element, which is generated when the air-fuel ratio of the fuel mixture used for combustion is in a rich state, The carbon film also acted as an electrode, and had the problem that the thermistor resistance decreased as the apparent electrode area increased. High-temperature thermistors containing titania as a main component are also known. This titania had the disadvantage that when it reached a high temperature of around 600°C, the titania itself became active against oxygen, causing a change in resistance. Therefore, JP-A No. 56-84541, 55-
Nos. 158548 and 55-162046 propose providing a glass layer on the titania surface. This glass layer on the titania surface blocks exhaust gas and prevents resistance changes due to titania's gas sensitivity. As a result, titania can be used as a high-temperature thermistor. However, due to the mismatch in thermal expansion coefficients between glass and titania, cracks are likely to occur in the glass due to thermal shock. Another problem is that the glass flows at high temperatures, which increases the resistance change of the thermistor. The inventors of the present invention have conducted intensive studies on high-temperature thermistors that do not have the above-mentioned problems, and have solved the above-mentioned conventional problems at once by applying an insulating coating with sufficiently high specific resistance to the surface of the thermistor element as the outermost layer. However, they have discovered that temperature can be measured accurately and quickly, and have completed the present invention. In other words, the gist of the present invention is that a porous coating layer having a resistivity 100 times higher than the material constituting the thermistor element is provided as the outermost layer on the surface of a thermistor element in which a pair of electrode wires are embedded. This is a high temperature thermistor that is characterized by the following. Next, the present invention will be explained in detail with reference to the drawings. Fig. 1 shows one embodiment of the thermistor element used in the high temperature thermistor of the present invention. Zirconium oxide (ZrO 2 ), spinel having the general formula of M(Al x , Cry , Fe z ) 2 O 4 etc. can also be used, but the present applicant disclosed it in JP-A-56-37269. Preferably, it consists of the following composition: That is, the composition is (X) Cr2O3- (Y)
In the ternary composition diagram in Figure 2, which is represented by V 2 O 5 -(Z)TiO 2 , X=99.5 Y=0.5 Point A at Z=0 X=70 Y=30 Point B at Z=0 X= Quadrilaterals A, B, formed by line segments connecting point C at 0.5 Y=30 Z=69.5 and point D at X=0.5 Y=0.5 Z=99.0.
A composition within the area of C, D or 100 parts by weight of the composition,
This is a high temperature thermistor composition comprising 20 parts by weight or less of one or more selected from Al 2 O 3 , SiO 2 , CaO, BaO, MgO and MnO 2 . Reference numeral 2 denotes an electrode wire whose tip is embedded in the thermistor element 1, and on the surface of the thermistor element 1, a porous coating layer 3 whose specific resistance is 100 times or more higher than the material constituting the thermistor element 1 is formed. It is provided as the outermost layer. Since the porous film layer 3 has such a high specific resistance, it has the effect of blocking surface leakage of current due to carbon attached to the surface. In order to obtain this effect more effectively, the specific resistance of the porous coating layer 3 is preferably 1000 times or more the specific resistance of the material constituting the thermistor element 1. In addition, since the thermistor shown in the figure only has a porous film layer 3 on the outside of the thermistor element 1, the thermistor element 1 is protected from the object to be measured such as gas.
heat is transferred almost unimpeded. Therefore, this thermistor responds sharply to changes in the temperature of the object to be measured. Furthermore, the porous coating layer 3 is less likely to crack due to its porous nature. That is, even if a thermal gradient occurs and, as a result, one part expands more than another, much of the expansion in that part occurs in a way that reduces the volume of the pores, and is therefore due to distortion due to the thermal gradient. Cracks are less likely to occur. As a specific material for the porous coating layer 3, ceramics such as alumina, silica, forsterite, and spinel are preferable. Among these, alumina has high specific resistance and heat resistance, and is a material that constitutes many thermistor elements 1. Thermal expansion characteristics are similar to that of the same material, making it an excellent coating material. If the thickness is 5μ or more, the influence of carbon on the surface can be excluded. Therefore, there is no need to make it very thick, and a thickness of 500 μm or less is sufficient. The thickness and porosity of the porous film layer 3 affect its ability to prevent surface leakage of current and its own resistance to cracking, but when both are taken into consideration comprehensively, , for alumina, a porous membrane of 10-400μ and a porosity of 10-40% gives good results. It is considered that the same range is preferable for materials other than alumina as long as the film eliminates the surface leakage. For example, the porous coating layer 3 can be provided on the thermistor element 1 in the following manner. First, powder of the material constituting the thermistor element 1 is placed in a mold, the electrode wires 2 are embedded in the powder, and both are pressed into a predetermined shape. Next, the coating material is sprinkled in water to form a slurry, and the obtained molded article is dipped in the slurry to coat the surface of the molded article with the coating material. In this case, the coating thickness can be adjusted by the number of dips. The molded body coated with such a coating material will be fired in a later step, but before firing, the coating material is not as porous as it is after firing. By firing, the particles that make up the coating material grow and bond with each other, forming appropriate pores and becoming porous. However, by adjusting the concentration of the slurry that is the raw material for the coating material, the size of the particles in the slurry, etc., the filling rate of particles per unit volume of the coating material can be adjusted appropriately, and the desired porosity can be achieved after firing. The porous coating layer 3 is made to be as follows. In this way, various methods such as spraying can be used to form the coating material, as long as the filling rate of particles per unit volume of the coating material can be adjusted appropriately.
Next, by sintering at 1350 to 1450° C. for 1 to 2 hours using an electric furnace or the like, the thermistor element 1 and coating layer 3 can be fired at the same time. The thermistor element 1 provided with the coating layer 3 in this manner is bonded to an insulator tube 5 made of alumina or the like using an adhesive 4 such as heat-resistant cement, for example, as shown in FIG. The electrode wire is led out from the opposite end of the insulator tube 5 to form a high temperature thermistor. As mentioned above, the high temperature thermistor of the present invention has the following characteristics:
A porous film layer with high specific resistance is provided on the surface of the element. Therefore, even if carbon, which is generated when the air-fuel ratio is in an excessively rich state, adheres, it blocks surface leakage, so it does not act as an electrode and does not increase the apparent electrode area. In addition, the thermistor of the present invention only has a porous coating layer on the outside of the thermistor element, so
Heat is transmitted from the object to be measured, such as gas, to the thermistor element almost unhindered. Therefore, the thermistor of the present invention responds sharply to changes in the temperature of the object to be measured, and is capable of accurate and rapid temperature measurement. It is also possible to measure small and rapid changes in the temperature of the object to be measured. Furthermore, since the protective coating layer is porous, a considerable amount of expansion due to heat contributes to a reduction in the volume of the pores, so that cracks due to thermal strain are less likely to occur. In order to manufacture the high-temperature thermistor of the present invention, the method described above involves simultaneously sintering the element and the porous coating layer. Therefore, after firing the thermistor, there is no need for a complicated process such as recoating the film layer, and since the film layer and thermistor base material are sintered simultaneously, they are firmly bonded to each other, and the film layer does not change during use. Will not peel off. The present invention will be explained in more detail below using experimental examples, but the present invention is not limited by the following experimental examples unless it exceeds the gist thereof. Experimental example Cr 2 O 3 80% (weight%, same below), TiO 2 15%,
A thermistor composition consisting of 5% V 2 O 5 was placed in a mold and powder pressed together with a 0.3φ PR wire into the shape shown in FIG. The surface of the press molded body is immersed in a slurry in which 92% Al 2 O 3 , 8% borosilicate glass, and 3% polyvinyl alcohol are dispersed in water to provide an alumina coating layer on the surface. The film thickness was controlled by the number of dips. The thermistor element and the alumina coating layer were fired in an electric furnace at 1400°C for 1 hour. For comparison, one part of the thermistor element was coated with another insulating layer on its surface after firing. The thermistor element is fixed to the insulator pipe as shown in Figure 3, and the air-fuel ratio A/F is adjusted in the exhaust pipe of the 2000 c.c. engine.
Carbon deposits were deposited on the device surface at 11,400°C for 10 hours. The resistance value of the thermistor element of each sample was measured at 230℃±
Table 1 shows the results measured at 2°C. Note that the specific resistance of the thermistor element without the coating layer was approximately 1×10 Ω·cm.

【表】 第1表の結果より被膜層が設けられていない試
料1はカーボン堆積物が沈着すると抵抗値が大幅
に下がつてしまい、また試料8のように被膜層が
ガラス層であると被膜層にクラツクが発生し易い
ことが判つた。また被膜層を設けるのに被膜材を
サーミスター素子の焼成後に被覆すると、被膜層
が剥離し易くなることが判つた。
[Table] From the results in Table 1, the resistance value of Sample 1, which does not have a coating layer, decreases significantly when carbon deposits are deposited, and when the coating layer is a glass layer like Sample 8, the coating layer It was found that cracks were likely to occur in the layer. It has also been found that if a coating material is applied to the thermistor element after it has been fired, the coating layer tends to peel off.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の高温用サーミスターで用いる
サーミスター素子の実施例を示す断面図、第2図
は本発明の高温用サーミスターで使用することの
できるサーミスター組成物の1例を示す組成図、
第3図は本発明の高温用サーミスターの実施例を
示す一部断面の平面図である。 1……サーミスター素子、2……電極線、3…
…被膜層。
FIG. 1 is a cross-sectional view showing an example of a thermistor element used in the high-temperature thermistor of the present invention, and FIG. 2 shows an example of a thermistor composition that can be used in the high-temperature thermistor of the present invention. composition diagram,
FIG. 3 is a partially sectional plan view showing an embodiment of the high temperature thermistor of the present invention. 1... Thermistor element, 2... Electrode wire, 3...
...Coating layer.

Claims (1)

【特許請求の範囲】 1 内部に一対の電極線を埋設したサーミスター
素子の表面に、該サーミスター素子を構成する材
料よりも固有抵抗が100倍以上高い多孔質被膜層
を最外層として設けたことを特徴とする高温用サ
ーミスター。 2 サーミスター素子を構成する材料が、Cr2O3
−TiO2−V2O5を主成分とする特許請求の範囲第
1項記載の高温用サーミスター。 3 多孔質被膜層が、多孔質アルミナを主成分と
する特許請求の範囲第1項記載の高温用サーミス
ター。
[Claims] 1. A porous film layer having a resistivity 100 times or more higher than the material constituting the thermistor element is provided as the outermost layer on the surface of a thermistor element in which a pair of electrode wires are embedded. A high temperature thermistor characterized by: 2 The material constituting the thermistor element is Cr 2 O 3
The high-temperature thermistor according to claim 1 , which contains -TiO2 - V2O5 as a main component. 3. The high temperature thermistor according to claim 1, wherein the porous coating layer contains porous alumina as a main component.
JP20790082A 1982-11-27 1982-11-27 Thermistor for high temperature and method of producing same Granted JPS5998501A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20790082A JPS5998501A (en) 1982-11-27 1982-11-27 Thermistor for high temperature and method of producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20790082A JPS5998501A (en) 1982-11-27 1982-11-27 Thermistor for high temperature and method of producing same

Publications (2)

Publication Number Publication Date
JPS5998501A JPS5998501A (en) 1984-06-06
JPH0220121B2 true JPH0220121B2 (en) 1990-05-08

Family

ID=16547429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20790082A Granted JPS5998501A (en) 1982-11-27 1982-11-27 Thermistor for high temperature and method of producing same

Country Status (1)

Country Link
JP (1) JPS5998501A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60185353U (en) * 1984-05-17 1985-12-09 三洋電機株式会社 Printed board

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638042A (en) * 1979-09-06 1981-04-13 Konishiroku Photo Ind Co Ltd Color photographic image forming method

Also Published As

Publication number Publication date
JPS5998501A (en) 1984-06-06

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