JPH02205332A - Film carrier and manufacture thereof - Google Patents

Film carrier and manufacture thereof

Info

Publication number
JPH02205332A
JPH02205332A JP1025305A JP2530589A JPH02205332A JP H02205332 A JPH02205332 A JP H02205332A JP 1025305 A JP1025305 A JP 1025305A JP 2530589 A JP2530589 A JP 2530589A JP H02205332 A JPH02205332 A JP H02205332A
Authority
JP
Japan
Prior art keywords
insulating layer
layer
film carrier
bonding
thermocompression
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1025305A
Other languages
Japanese (ja)
Other versions
JP2751308B2 (en
Inventor
Sotaro Toki
土岐 荘太郎
Hidekatsu Sekine
秀克 関根
Osamu Hanajima
花島 修
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP1025305A priority Critical patent/JP2751308B2/en
Publication of JPH02205332A publication Critical patent/JPH02205332A/en
Application granted granted Critical
Publication of JP2751308B2 publication Critical patent/JP2751308B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To obtain a film carrier having a merit as a low dielectric constant, a fast signal transmission rate and the possibility of usage in a high-frequency region, by using fluoroplastics as an insulating layer and a bonding layer and bonding three layers constituted including a conductor layer through a thermocompression bonding system in a single operation. CONSTITUTION:Glass cloth is impregnated with fluoroplastics to form an insulating layer 2 as a base, and a tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer is selected as a bonding layer 4, placed onto one surface of the insulating layer 2, thermocompression-bonded lightly and fixed temporarily. A device hole 5 and sprocket holes 6 are shaped, electrolytic copper foils are selected as conductive layers 3, and the foils are laminated onto the insulating layer 2 with the bonding layer 4. The foils are thermocompression-bonded for thirty min at a pressure of 30kg at a temperature of 370 deg.C for laminating. Accordingly, since the dielectric constant of a film carrier body manufactured is reduced, the rate of transmission is accelerated, and the film carrier can be used in a division such as a computer employed for arithmetic operation at high speed.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明はIC,LSI等の集積回路チップの実装に用い
られるフィルムキャリアの製造方法に関するものである
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method of manufacturing a film carrier used for mounting integrated circuit chips such as ICs and LSIs.

〈従来技術〉 従来のフィルムキャリアは第3図に示すようにポリイミ
ド系フィルムあるいはポリエステル系フィルムからなる
絶縁層2の片面上に液状の接着剤4をコーティングした
後に導電層3である銅箔をラミネートした三層式のもの
と、第4図に示すように前記したものと同材質の絶縁層
2の片面上にめっき、真空蒸着などの手段で導電層3を
形成したり、逆に導電層3に液状のポリイミドをコーテ
ィングして絶縁層2を形成させるという二層式の二種類
が考えだされていた。
<Prior art> As shown in Fig. 3, a conventional film carrier coats a liquid adhesive 4 on one side of an insulating layer 2 made of a polyimide film or a polyester film, and then laminates a copper foil as a conductive layer 3. As shown in FIG. 4, a conductive layer 3 is formed on one side of an insulating layer 2 made of the same material as the one described above by plating, vacuum deposition, etc. Two types of two-layer systems have been devised, in which the insulating layer 2 is formed by coating liquid polyimide on the insulating layer 2.

〈発明が解決しようとする課題〉 従来のフィルムキャリアは下記の点に問題があったΦ 三層式の場合、耐熱性に難点があった。すなわち、絶縁
層2に耐熱性のあるポリイミドを使用しても導電層3で
ある銅箔との接着の役割を果たす接着層4にエポキシ系
の材料を用いなければならず、この接着層の耐熱性が1
50℃と低いため、たとえば回路基板と接続を行なう際
、半田接合法を用いる場合、260℃程度の熱がかかる
ため数秒の作業時間しか許容されなかった。この事は、
こうした作業を行なう際の制約条件となっていた。
<Problems to be Solved by the Invention> Conventional film carriers had the following problems. In the case of the Φ three-layer type, there was a problem in heat resistance. That is, even if heat-resistant polyimide is used for the insulating layer 2, an epoxy-based material must be used for the adhesive layer 4, which plays the role of adhesion to the copper foil that is the conductive layer 3. Gender is 1
Since the temperature is as low as 50.degree. C., for example, when a solder bonding method is used to connect to a circuit board, heat of about 260.degree. C. is applied, so that only a few seconds of work time is allowed. This thing is
This was a constraint when carrying out such work.

また、材質の異なる液状の接着剤と絶縁層2にコーティ
ングする際は、科学的結合があまり望めないため、接着
力を向上させるのに物理的なアンカー効果に頼らざるを
得なく、この場合、絶縁層2を液体ホーニング等の手段
で砂目立て9を行なうなど製造時において手間のかかる
工程をかかえていた。
In addition, when coating the insulating layer 2 with a liquid adhesive made of different materials, it is difficult to expect chemical bonding, so it is necessary to rely on the physical anchor effect to improve the adhesive strength. The manufacturing process requires time-consuming steps such as graining 9 of the insulating layer 2 by means such as liquid honing.

一方、二層式の場合、三層式とは異なり、接着層4を有
さないため、半田耐熱性不良という事態は生じないが、
製造工程が頻雑であるという問題があった。すなわち、
二層式の場合、前記したように構造上、絶縁層2のデバ
イスホール5や、スプロケットホール6をプレス打抜き
法など簡便な方法で予め形成させる事が出来ず、絶縁層
2をフォトリソ方式で所定のパターンに形成させなけれ
ばならなかった。この場合導電層3のパターニングとあ
わせて2回のフォトリソ工程を経る事により、かなり頻
雑な製造法であった。
On the other hand, unlike the three-layer type, the two-layer type does not have the adhesive layer 4, so poor solder heat resistance does not occur.
There was a problem that the manufacturing process was frequent. That is,
In the case of a two-layer type, as described above, due to the structure, it is not possible to form the device holes 5 and sprocket holes 6 in the insulating layer 2 in advance by a simple method such as press punching, and the insulating layer 2 is formed by photolithography. It had to be formed into a pattern. In this case, the manufacturing method was quite complicated because it required two photolithography steps in addition to the patterning of the conductive layer 3.

また従来のフィルムキャリアは絶縁層としてポリイミド
やポリエステルを用いた関係上、その誘導率はそれぞれ
3.5 、3.2(IMHz)前後であり、後述するが
、高速演算に使用されるコンピューターなどの部門で使
用できないなどの不都合を生じていた。
Furthermore, because conventional film carriers use polyimide or polyester as an insulating layer, their dielectric constants are around 3.5 and 3.2 (IMHz), respectively. This caused inconveniences such as the department not being able to use it.

さらにポリエステルを絶縁層2として用いた場合、耐熱
性はさらに低く、安価な電卓などその用途は限られてい
た。
Furthermore, when polyester is used as the insulating layer 2, the heat resistance is even lower, and its applications such as inexpensive calculators are limited.

く課題を解決するための手段〉 本発明の目的は、耐熱性があり、しかも製造方法におい
ては三層式で必要であった絶縁層2の砂目立て工程がい
らず、また二層式のようにフォトリソ工程が二回も必要
ではなく一回で良いなど、簡便な製造方法ですむフィル
ムキャリアを提供する事にある。具体的にいえば、絶縁
層及び接着層にフッ素系樹脂を用い、導体層を含め構成
される三層を一度に熱圧着方式で接着させるという製造
方法を提供する事にある。
Means for Solving the Problems> An object of the present invention is to provide heat resistance, eliminate the graining process of the insulating layer 2 that was necessary in the three-layer method, and eliminate the need for a graining step for the insulating layer 2, which was required in the three-layer method. The purpose of the present invention is to provide a film carrier that can be produced by a simple manufacturing method, such as requiring only one photolithography process instead of two. Specifically, the object is to provide a manufacturing method in which a fluororesin is used for the insulating layer and the adhesive layer, and three layers including the conductor layer are bonded together by thermocompression bonding.

く作用〉 本発明のフィルムキャリアの特徴の一つである絶縁層2
にフッ素系樹脂を用いるという点に関して説明する。
Function> Insulating layer 2 which is one of the characteristics of the film carrier of the present invention
The point of using a fluororesin will be explained below.

コンピューターなど情報関連機器は大容量になる方向で
あり信号伝播速度のアップが望まれている。信号伝播速
度(V)はV −K X C/(T’−(K一定数、C
−光速、ε=誘電率)で表わされるため、誘電率が小さ
いほど伝播速度は速くなりより高速演算が可能となるわ
けである。フッ素系樹脂は誘電率2.2〜2.5 と最
も誘電率の小さい樹脂でありこうした目的の絶縁層とし
て最適である。従来のフィルムキャリアが使用されてい
るポリイミドやポリエステルは誘電率がそれぞれ3.5
 、3.2前後であり、これらを比べるとフッ素系樹脂
の場合的1.1〜1.3倍の信号伝播速度アップの可能
性がある。また通信関係では衛星放送において12GH
2帯の高周波が使用されるがこの領域では誘電率の高い
ポリイミドを使用した場合ノイズをひろう事があり適当
ではない、その点低誘電率であるフッ素系樹脂では問題
がなく、BSアンテナ用コンバーターなどに用いる事が
できる。
Information-related equipment such as computers is becoming larger in capacity, and it is desired to increase the signal propagation speed. The signal propagation velocity (V) is V - K x C/(T' - (K constant, C
- the speed of light, ε = dielectric constant), so the smaller the dielectric constant, the faster the propagation speed, which allows for higher-speed calculations. Fluororesin is a resin with the lowest dielectric constant of 2.2 to 2.5, and is most suitable as an insulating layer for this purpose. Polyimide and polyester, which are used for conventional film carriers, each have a dielectric constant of 3.5.
, is around 3.2, and comparing these, there is a possibility of increasing the signal propagation speed by 1.1 to 1.3 times in case of fluororesin. In addition, in the communication field, 12GH is used for satellite broadcasting.
Two bands of high frequency are used, and in this area, if polyimide with a high dielectric constant is used, it may generate noise and is not suitable.However, fluorine-based resin with a low dielectric constant has no problem, and is used as a converter for BS antennas. It can be used for etc.

本発明のもう一つの特徴である製造工程のポイントにつ
いて述べる0本発明は、従来の三層式フィルムキャリア
と比較されるものとする。従来は前記したように液状の
接着剤を絶縁N2上にコーティングするがその際、接着
力をあげるために、絶縁N2の表面を液体ホーニング等
の手段で砂目立ての処理を施さなければならなかっな。
The present invention will be compared with a conventional three-layer film carrier. Conventionally, as mentioned above, liquid adhesive was coated on the insulation N2, but in order to increase the adhesive strength, the surface of the insulation N2 had to be grained by means such as liquid honing. .

本発明の絶縁層2として、フッ素系樹脂、接着層4とし
てシート状のフッ素系樹脂を用いると両者とも熱可塑性
物質であるため、融点以上の温度で熱圧着すれば、互い
に溶融し、貼り合せる事が可能である。したがって、従
来のように絶縁N2の表面を租すという工程は不要であ
る。
If a fluorine-based resin is used as the insulating layer 2 of the present invention and a sheet-like fluorine-based resin is used as the adhesive layer 4, since both are thermoplastic materials, if they are thermocompressed at a temperature higher than their melting point, they will melt and bond together. things are possible. Therefore, the step of milling the surface of the insulation N2 as in the conventional method is not necessary.

本発明で用いるフッ素樹脂としてポリテトラフルオルエ
チレン(以下PTFEと略す)、ポリクロルトリオルエ
チレン、ポリフッ化ビニリデン、ポリフッ化ビニル、テ
トラフルオルエチレンとへキサフルオルプロピレンとの
共重合物があげられるが耐熱性の点ではPTFBが望ま
しい。
Examples of the fluororesin used in the present invention include polytetrafluoroethylene (hereinafter abbreviated as PTFE), polychlorotriolethylene, polyvinylidene fluoride, polyvinyl fluoride, and a copolymer of tetrafluoroethylene and hexafluoropropylene. However, PTFB is preferable in terms of heat resistance.

この絶縁層2の形態として、フッ素樹脂単体の他、ガラ
スクロスに含浸させたもの、独立気泡が存在するものな
どが考えられる。厚みは10〜250μmが適当である
。また、接着層4として、テトラフルオロチレンーパー
フルオロアルカリビニルエーテルコボリマ−(以下PF
^と略す)が望ましい。
Possible forms of the insulating layer 2 include a single fluororesin, a glass cloth impregnated with it, and a structure containing closed cells. The appropriate thickness is 10 to 250 μm. In addition, as the adhesive layer 4, a tetrafluoroethylene-perfluoroalkali vinyl ether copolymer (hereinafter referred to as PF
(abbreviated as ^) is desirable.

導電層3の材質としては銅の他アルミニウム、ニッケル
、鉄−ニッケル合金、ステンレス、銀、半田、金などが
良く、厚みは5〜200 μmが適当である。
The material of the conductive layer 3 is preferably copper, aluminum, nickel, iron-nickel alloy, stainless steel, silver, solder, gold, etc., and the thickness is suitably 5 to 200 μm.

本発明のフィルムキャリア及びその製造方法に関して実
施例を用いて以下に記す。
The film carrier of the present invention and its manufacturing method will be described below using Examples.

〈実施例〉 中35mのガラス布(■有沢製作所10BOA、厚み8
0μm)にフッ素系樹脂(旭硝子■製、PTF[!フル
オンAD−1)を含浸させベースの絶縁N2とした。
<Example> 35m glass cloth (Arisawa Seisakusho 10BOA, thickness 8
0 μm) was impregnated with a fluororesin (PTF [!Fluon AD-1, manufactured by Asahi Glass ■) to form the base insulation N2.

この後、接着層4としてPFA  (ダイキン工業■製
厚み25μm)を選び絶縁層2の片面上にのせ軽く熱圧
着し仮どめを行なった。さらにプレス打抜き法にてワイ
ドタイプの仕様(有効中26.996+as)でデバイ
スホール5とスプロケットホール6を形成させた。さら
に導電層3として電解銅箔(日鉱グールド■製、JTC
箔、厚み35μm、巾26.0 am)を選択し、上記
の接着層4付絶縁層2とラミネートを行なった。ラミネ
ートには、真空プレス機を用い、条件とし温度はPTF
I!の融点(327”c)以上である370℃に設定し
、圧力30kg、時1a130分で熱圧着させた。この
ようにして作られたフィルムキャリア本体において銅箔
の絶縁層に対するピーリング剥離強度は約2.0 kg
 / ctaであり、接着力は従来のポリイミドベース
と比べて遜色のないものであつた。また誘電率は2.5
であった。
Thereafter, PFA (manufactured by Daikin Industries, Ltd., thickness: 25 μm) was selected as the adhesive layer 4, and was placed on one side of the insulating layer 2 and lightly thermocompressed for temporary fixing. Furthermore, a device hole 5 and a sprocket hole 6 were formed using a press punching method according to wide type specifications (26.996+as in effect). Further, as the conductive layer 3, electrolytic copper foil (manufactured by Nikko Gould ■, JTC
A foil having a thickness of 35 μm and a width of 26.0 am) was selected and laminated with the insulating layer 2 with the adhesive layer 4 described above. For lamination, a vacuum press machine is used, and the temperature is set to PTF.
I! The temperature was set at 370°C, which is above the melting point (327"c) of 2.0 kg
/cta, and the adhesive strength was comparable to that of conventional polyimide bases. Also, the dielectric constant is 2.5
Met.

この後、従来のフィルムキャリア1と同様な工程で導電
層3である銅箔のバターニングを行なった。すなわち、
東京応化工業■製のネガ型レジストPM[!Rを用い、
レジスト形成を行なった後に銅箔を塩化第2銅系エッチ
ャントにてインナーリード7(ピッチ160βm、平坦
中80/7m、ピン数250ピン)のエツチング加工を
行なった。この後、インナーリード7及びアウタ−リー
ド8先端部を除き、スクリーン印g++法にてソルダー
レジストを印刷した。(インキは、アサヒ化学研究所製
CCR240GS)さらにソルダーレジストが形成され
ていない部分に9:1半田めっき(厚み7μm)を施し
フィルムキャリアIとして仕上げた。
Thereafter, the copper foil serving as the conductive layer 3 was patterned in the same process as the conventional film carrier 1. That is,
Negative resist PM manufactured by Tokyo Ohka Kogyo ■! Using R,
After forming a resist, the copper foil was etched using a cupric chloride etchant to form inner leads 7 (pitch 160βm, flat medium 80/7m, number of pins 250). Thereafter, a solder resist was printed using the screen printing g++ method except for the tips of the inner leads 7 and outer leads 8. (The ink was CCR240GS manufactured by Asahi Chemical Research Institute) Furthermore, 9:1 solder plating (thickness: 7 μm) was applied to the portion where the solder resist was not formed, and a film carrier I was completed.

このようにして製造した本発明による絶縁llI2がフ
ッ素系樹脂ベースのフィルムキャリア1はBSアンテナ
用コンバータの部品の一部として用いられ、実装の際の
半田耐熱性(260°C30μm)を容易にクリヤーし
、製品としてその信顧性など要求仕様のすべてを満たし
良好なものであった。
The film carrier 1 in which the insulating llI2 of the present invention is based on a fluororesin, manufactured in this manner, is used as a part of a converter for a BS antenna, and easily passes soldering heat resistance (260°C, 30 μm) during mounting. However, the product was in good condition, meeting all required specifications including reliability.

〈発明の効果〉 本発明の、絶縁層としてフッ素系樹脂を用いるフィルム
キャリアは以上のように、高耐熱性を有し、また、その
製造においても工程を短縮する事ができるなどのメリッ
トをみいだす事ができた。
<Effects of the Invention> As described above, the film carrier of the present invention using a fluororesin as an insulating layer has high heat resistance, and also has advantages such as being able to shorten the manufacturing process. I was able to do something.

また、本発明のフィルムキャリアを用いる事でその低誘
電率であるメリット、すなわち、信号伝播速度が速く、
高周波M域(たとえば12GIIz以上)での使用が可
能である事など従来のフィルムキャリアでは対応できな
かったスーパーコンピューターや衛星放送の分野での使
用可能となった。
In addition, by using the film carrier of the present invention, the advantage of its low dielectric constant, that is, the signal propagation speed is high,
Since it can be used in the high frequency M range (for example, 12 GIIz or higher), it has become possible to use it in the fields of supercomputers and satellite broadcasting, which conventional film carriers could not handle.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図 本発明によるテープキャリアの一部を示す平面
図 第2図 本発明によるテープキャリアの一部を示す概略
断面図 第3図 従来の三層式テープキャリアの一部を示す概略
断面図 第4図 従来の二層式テープキャリアの一部を示す概略
断面図 1、テープキャリア 2絶縁層 3.導電層4、接着層
     5.デバイスホール6、スプロケットホール
 7.インナーリード8、アエターリード 9.砂目室
て 特  許  出  願  人 凸版印刷株式会社 代表者 鈴木和夫
FIG. 1 is a plan view showing a part of a tape carrier according to the present invention. FIG. 2 is a schematic cross-sectional view showing a part of a tape carrier according to the present invention. FIG. 3 is a schematic cross-sectional view showing a part of a conventional three-layer tape carrier. Figure 4: Schematic cross-sectional view showing part of a conventional two-layer tape carrier 1. Tape carrier 2. Insulating layer 3. Conductive layer 4, adhesive layer 5. Device hole 6, sprocket hole 7. Inner lead 8, Aether lead 9. Patent filed for Sunamokuro Kazuo Suzuki, Representative of Toppan Printing Co., Ltd.

Claims (2)

【特許請求の範囲】[Claims] (1)絶縁層及び接着層がフッ素系樹脂よりなり、絶縁
層、接着層および導電層が熱圧着により接合されてなる
フィルムキャリア。
(1) A film carrier in which the insulating layer and the adhesive layer are made of a fluororesin, and the insulating layer, the adhesive layer, and the conductive layer are bonded together by thermocompression bonding.
(2)絶縁層にフィルム状の接着層を仮接着し、プレス
打抜き法で所定の孔を形成させた後熱圧着法にて導電層
をラミネートさせ所定のパターンをフォトリソ法にて形
成する事を特徴とする請求項1記載のフィルムキャリア
の製造方法。
(2) Temporarily adhere a film-like adhesive layer to the insulating layer, form a predetermined hole using a press punching method, then laminate a conductive layer using a thermocompression method, and form a predetermined pattern using a photolithography method. The method for producing a film carrier according to claim 1.
JP1025305A 1989-02-03 1989-02-03 Film carrier and manufacturing method thereof Expired - Fee Related JP2751308B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1025305A JP2751308B2 (en) 1989-02-03 1989-02-03 Film carrier and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1025305A JP2751308B2 (en) 1989-02-03 1989-02-03 Film carrier and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH02205332A true JPH02205332A (en) 1990-08-15
JP2751308B2 JP2751308B2 (en) 1998-05-18

Family

ID=12162304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1025305A Expired - Fee Related JP2751308B2 (en) 1989-02-03 1989-02-03 Film carrier and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP2751308B2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53149764A (en) * 1977-06-02 1978-12-27 Nitto Electric Ind Co Method of producing tape carrier tape
JPS603131A (en) * 1983-06-20 1985-01-09 Nitto Electric Ind Co Ltd Adhesive film for fixation of semiconductor element
JPS618958A (en) * 1984-06-25 1986-01-16 Hitachi Hokkai Semiconductor Kk Semiconductor device
JPS622639A (en) * 1985-06-28 1987-01-08 Dainippon Printing Co Ltd Manufacture of lead frame with supporting body

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53149764A (en) * 1977-06-02 1978-12-27 Nitto Electric Ind Co Method of producing tape carrier tape
JPS603131A (en) * 1983-06-20 1985-01-09 Nitto Electric Ind Co Ltd Adhesive film for fixation of semiconductor element
JPS618958A (en) * 1984-06-25 1986-01-16 Hitachi Hokkai Semiconductor Kk Semiconductor device
JPS622639A (en) * 1985-06-28 1987-01-08 Dainippon Printing Co Ltd Manufacture of lead frame with supporting body

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