JPH02214170A - Semiconductor light-receiving element - Google Patents
Semiconductor light-receiving elementInfo
- Publication number
- JPH02214170A JPH02214170A JP1034372A JP3437289A JPH02214170A JP H02214170 A JPH02214170 A JP H02214170A JP 1034372 A JP1034372 A JP 1034372A JP 3437289 A JP3437289 A JP 3437289A JP H02214170 A JPH02214170 A JP H02214170A
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving element
- electrode
- groove
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は金属−半導体一金！Ｉ４（以下ＭＳＭと呼ぶ
）受光素子の高感度化に関するものである。[Detailed Description of the Invention] [Industrial Field of Application] This invention is a metal-semiconductor metal! This invention relates to increasing the sensitivity of the I4 (hereinafter referred to as MSM) light receiving element.
第５図は従来のＭＳＭ形半導体受光素子の構造を示す斜
視図である。半絶縁性ＧａＡａ基板（１０１）の王面上
蚤こ橋上にｎ −Ｇ ａ Ａ ｓ領域（ｔ０２） ２よ
びｐ−ＧａＡａ領域（１０３）がイオン注入法あるいは
選択拡散法によって形成されている。それぞれの領域よ
にはｎ−電極（１０４）およびｐ−電極（１０５）が真
空蒸着法で形成される。ｐ−電極（１０５）に負、ｎ−
電極（１０４）ｌこ正の電圧を印加すると、ｐ−領域（
１０３）、ｎ−領域（１０２）Ｓよび半絶縁性ＧａＡｓ
基板（１０１）部分でＰＩＮ構造が形成され外部からの
入射光にたいし受光素子として働く。この受光素子は構
造が比較的単純で。FIG. 5 is a perspective view showing the structure of a conventional MSM type semiconductor light receiving element. An n-GaAs region (t02) 2 and a p-GaAa region (103) are formed on the crown surface of a semi-insulating GaAa substrate (101) by ion implantation or selective diffusion. In each region, an n-electrode (104) and a p-electrode (105) are formed by vacuum evaporation. Negative to the p-electrode (105), n-
When a positive voltage is applied to the electrode (104), the p-region (
103), n-region (102)S and semi-insulating GaAs
A PIN structure is formed in the substrate (101) portion and functions as a light receiving element for incident light from the outside. This photodetector has a relatively simple structure.
半絶縁性基板（１）上に形成されているためｌｌｆ Ｋ
流か少ないなどの利点を有している。Ilf K since it is formed on a semi-insulating substrate (1)
It has advantages such as less flow.
従来の半導体受光素子は以上のように構成されていたの
で、ｐ、ｎ−を極が基板主面上に形成され入射光に対し
て遮蔽物として作用するため、実効的な受光感度を大き
くすることが難しく、これを解決するため入射光に対し
透明になる電極も検討されているが、形成が難しく実用
的な解決方法には至っていない。Conventional semiconductor light-receiving elements were constructed as described above, and the p- and n-poles are formed on the main surface of the substrate and act as a shield against incident light, increasing the effective light-receiving sensitivity. To solve this problem, electrodes that are transparent to incident light are being considered, but they are difficult to form and no practical solutions have been found.
この発明は上記のような問題点を解決するため−こなさ
れたもので、受光感ａｔ高めたＭＳＭ形受光受光素子る
ことを目的とする。The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to provide an MSM type light-receiving/receiving element with increased light-receiving sensitivity.
この発明に係るＭＳＭ形半導体受光素子はｔ極による遮
蔽効果を無視できる程度に小さくするために、基板に鷹
を設は魔（Ｉｎ壁に電極を形成したものである。In order to reduce the shielding effect of the t-pole to a negligible extent, the MSM type semiconductor light-receiving device according to the present invention has an electrode formed on the substrate (an electrode is formed on the In wall).
以下、この発明の一実施例を図番こついて説明する。第
１図はこの発明の一実施例を示す模式断面図で１図にお
いて、（ｔｏｌ）は半絶性ＧａＡｓ基板、 （１１１６
）は半絶縁性ＧａＡｓ基板（１０１）に形成された鷹、
（１０２）は鷹（１０６）の片方の側面に選択的に形成
されたｎ−ＧａＡｓ層、 （１０３）は溝の他の側面に
形成されたｐ−ＧａＡｓ１ｍ、（ｔｏ４）はｎ Ｇａ
Ａｓ層（１０２）上に形成されたｎ−ＩＥ極、（１０５
）はｐ−ＧａＡｓ層（１口３）上に形成されたｐ−電極
である。矢印（１０７）は入射光である。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing one embodiment of the present invention. In FIG. 1, (tol) is a semi-interruptive GaAs substrate,
) is a hawk formed on a semi-insulating GaAs substrate (101),
(102) is an n-GaAs layer selectively formed on one side of the hawk (106), (103) is a p-GaAs layer formed on the other side of the groove, and (to4) is an n-GaAs layer formed on the other side of the groove.
n-IE electrode formed on the As layer (102), (105
) is a p-electrode formed on the p-GaAs layer (1 port 3). The arrow (107) is incident light.
この半導体受光素子は第２図Ｇこ示す製造工程断面図に
よって形成することができる。まず第２図（ａ） ｉこ
示すように、半絶縁性ＧａＡｓ基板上に通常の写真製版
法によって、ストライプ状のパターン（２０１）を形成
する。化学エツチングあるいはりアクティブイオンエツ
チング（ＲＩＩ）などのドライエツチング法によりｆｉ
（１０６）を形成する。ストライブの幅及び溝の幅は
数ばクロン程度にする。壇の深さも数ミクロンが適当で
あるが、この範囲に限定されるものではない。This semiconductor light-receiving element can be formed according to the manufacturing process cross-sectional view shown in FIG. 2G. First, as shown in FIG. 2(a), a striped pattern (201) is formed on a semi-insulating GaAs substrate by an ordinary photolithography method. fi by chemical etching or dry etching methods such as active ion etching (RII).
(106) is formed. The width of the stripes and the width of the grooves should be approximately several micrometers. The appropriate depth of the platform is several microns, but it is not limited to this range.
次に第２図（ｂ） （ｃ）に示すように、イオン（２１
）２）を庫壁の片１にのみ当たるように角変を持たせて
打ち込み、片方は例えばＳｔイオンによるｎ−形（１０
２）、他方をＺｎによるｐ−形（１０３）にする。イオ
ンの活性化を行うため番こ注入後８（）０℃程度で３０
分アニールを施こす。その後第２図（ｄ）のように、い
わゆる斜め蒸着法によりｐ、およびｎ領域上に電極（ｒ
＋）４ ）。Next, as shown in Fig. 2(b) and (c), the ion (21
)2) with an angle change so that it hits only piece 1 of the storage wall, and one side is made of n-type (10
2), the other side is made p-type (103) by Zn. In order to activate the ions, it was heated at about 8 () 0℃ for 30 minutes after implantation.
Perform minute annealing. Thereafter, as shown in FIG. 2(d), an electrode (r
+)4).
（１０５）を形成する。電極材料はｐ−を極としてＡｕ
Ｚｎ、ｎ−電極としてＡｕＧｅが適当である。(105) is formed. The electrode material is Au with p- as the pole.
Zn, AuGe is suitable as the n-electrode.
上記実施例ではイオン打ち込みをしてｐ −ｎ−領域を
形成した場合を示しているが、第３図の様にイオン注入
によらず２Ｍ１＠壁に形成したｐ−ｎ−１１！極からの
拡散を利用してｐ−拡散領域（釦３）２よびｎ−拡散領
域（４０４）を形成しても良い。The above embodiment shows the case where the p-n- region is formed by ion implantation, but as shown in FIG. 3, the p-n-11! The p-diffusion region (button 3) 2 and the n-diffusion region (404) may be formed using diffusion from the poles.
また第４図の様に金属材料をＷＳｉのように、ショツト
キー性電極としてもＭＳＭ形半導体受光素子として働く
事は論をまたない。Moreover, as shown in FIG. 4, it goes without saying that a metal material can also be used as a Schottky electrode, such as WSi, to function as an MSM type semiconductor light-receiving element.
以上の実施例ではＧａＡｓ系材料を例１こあげたか、Ｉ
ｎＰ、 ＩｈＧａＡｓなど他の半導体材料に適用できる
ことは明らかである。In the above embodiments, GaAs-based materials were used in Example 1, I
It is obvious that it can be applied to other semiconductor materials such as nP, IhGaAs, etc.
この様な構成の半導体受光素子に電圧を印加すると従来
例と同様に電極間でＰＩＮ構造（シミツトキー形では金
属−工層−金属構造）となり、入射光にたいして高い感
度を持つようになる。When a voltage is applied to a semiconductor light-receiving element having such a configuration, it forms a PIN structure (metal-layer-metal structure in the Schmitt key type) between the electrodes, as in the conventional example, and has high sensitivity to incident light.
以上のよう番ここの発明嘉こよれば、電極が入射光にた
いして遮蔽物とならないため実効的な受光感度を向上す
ることができ、従来の構造でｉＥ＆３μｍ。According to the invention described above, since the electrode does not act as a shield against incident light, the effective light receiving sensitivity can be improved, and the conventional structure can achieve iE&3 μm.
ｔＷ間隔３μｍのものであれば約半分の入射光が電極で
遮蔽されていたが、この発明では遮蔽効果は殆ど無視で
きるようになり感度は約２倍に改善される。If the tW interval was 3 μm, about half of the incident light would be blocked by the electrodes, but in the present invention, the blocking effect can be almost ignored, and the sensitivity is improved by about twice.
第１図はこの発明ω一実施例の半導体受光素子を示す模
式断面図、第２図ｆａ）〜（ｄ）は第１図の半導体受光
素子の製造工程を示す断面図、第３図、第４図はこの発
明の他の実施例を示す断面図、第５図は従来の半導体受
光素子を示す斜視図である。
図に２いて、（１０１）は半絶縁性ＧａＡｓ基板、（１
ｏ２）はｎ −ＧａＡｓ層、 （１０３）はｐ−ＧａＡ
ｓ層、（１０４）はｎ−１１ｔ極、（１０５）はｐ−電
極、（１０６）は麿、（１０７）は入射光を示す。
なお１図中、同一符号は同一、または相当部分を示す。FIG. 1 is a schematic cross-sectional view showing a semiconductor light-receiving device according to an embodiment of the present invention, FIGS. FIG. 4 is a sectional view showing another embodiment of the present invention, and FIG. 5 is a perspective view showing a conventional semiconductor light receiving element. 2 in the figure, (101) is a semi-insulating GaAs substrate, (1
o2) is an n-GaAs layer, (103) is a p-GaA layer
In the s layer, (104) is the n-11t pole, (105) is the p-electrode, (106) is the electrode, and (107) is the incident light. In Figure 1, the same reference numerals indicate the same or equivalent parts.
Claims (1)
た事を特徴とする半導体受光素子。A semiconductor light-receiving element characterized by electrodes formed on both sides of a groove formed on a semi-insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1034372A JPH02214170A (en) | 1989-02-14 | 1989-02-14 | Semiconductor light-receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1034372A JPH02214170A (en) | 1989-02-14 | 1989-02-14 | Semiconductor light-receiving element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02214170A true JPH02214170A (en) | 1990-08-27 |
Family
ID=12412341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1034372A Pending JPH02214170A (en) | 1989-02-14 | 1989-02-14 | Semiconductor light-receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02214170A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007105593A1 (en) * | 2006-03-13 | 2007-09-20 | Nec Corporation | Photodiode, method for manufacturing such photodiode, optical communication device and optical interconnection module |
-
1989
- 1989-02-14 JP JP1034372A patent/JPH02214170A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007105593A1 (en) * | 2006-03-13 | 2007-09-20 | Nec Corporation | Photodiode, method for manufacturing such photodiode, optical communication device and optical interconnection module |
| US7800193B2 (en) | 2006-03-13 | 2010-09-21 | Nec Corporation | Photodiode, method for manufacturing such photodiode, optical communication device and optical interconnection module |
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