JPH0221619A - Etching equipment - Google Patents

Etching equipment

Info

Publication number
JPH0221619A
JPH0221619A JP17082188A JP17082188A JPH0221619A JP H0221619 A JPH0221619 A JP H0221619A JP 17082188 A JP17082188 A JP 17082188A JP 17082188 A JP17082188 A JP 17082188A JP H0221619 A JPH0221619 A JP H0221619A
Authority
JP
Japan
Prior art keywords
plate
quartz
electrode
fusion
metal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17082188A
Other languages
Japanese (ja)
Inventor
Tadaaki Nakamura
忠明 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17082188A priority Critical patent/JPH0221619A/en
Publication of JPH0221619A publication Critical patent/JPH0221619A/en
Pending legal-status Critical Current

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  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To increase the strength of an electrode plate to sputtering, and improve the working life of the electrode plate, by providing the surface of a grounded power supply with a quartz plate. CONSTITUTION:A finished metal plate 13 as a unitary body is covered with a quartz plate 14 and a quartz frame 15, and fusion-bonded at several points of the outer periphery of the metal plate 13 temporarily. After that, a quartz pin 17 and the quartz plate 14 are fusion-bonded by heating at a heat fusion- bonding part 19, and a quartz seat 18 and the quartz pin 17 are fusion-bonded by heating at a heat fusion-bonding part 20, thereby integrating the metal plate 13 and the quartz plate 14 in a unitary body. Then the quartz plate 14 and the quartz frame 15 are normally fusion-bonded. The quartz plate 14 is finished in a necessary thickness, and the outer periphery and the upper surface of the quartz frame 15 are finished so as to form the same surface as the metal plate 13, thereby completing an electrode plate 12. By this setup, the strength of the electrode plate of a grounding electrode to sputtering is increased, and the working life of electrode plate can be lengthened.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、真空容器内に高周波電極と接地電極とが対
向して設けられ、高周波電極に高周波が印加されるエツ
チング装置に関するものである、〔従来の技術〕 第2図は従来のエツチング装置の一例を示す断面図、第
3図は第2図に示した接地電極の電極板の断面図であり
、図において(1)は真空容器、(2)は高周波を印加
する高周波電極、(3)は高周波電極(2)と平行平板
電極を構成する接地電極、(4)は高周波電源、(5)
はエツチングの反応ガスを供給するガス供給系統、(6
)は真空を遺り出す真空排気系統、(7)はエツチング
されるウェハ、(8)は接地電極(3)の電極板、(9
)は電極板(8)を構成する金属板、(10)は金属板
(9)をアルミナ・コーティングで保護する絶縁膜であ
る。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an etching device in which a high frequency electrode and a ground electrode are provided facing each other in a vacuum container, and a high frequency is applied to the high frequency electrode. [Prior Art] Fig. 2 is a sectional view showing an example of a conventional etching device, and Fig. 3 is a sectional view of an electrode plate of the ground electrode shown in Fig. 2. In the figure, (1) is a vacuum vessel, (2) is a high frequency electrode that applies high frequency, (3) is a ground electrode that forms a parallel plate electrode with high frequency electrode (2), (4) is a high frequency power source, (5)
is a gas supply system that supplies etching reaction gas, (6
) is the vacuum evacuation system that produces a vacuum, (7) is the wafer to be etched, (8) is the electrode plate of the ground electrode (3), (9
) is a metal plate constituting the electrode plate (8), and (10) is an insulating film that protects the metal plate (9) with an alumina coating.

次に上記構成のエツチング装置における反応について説
明する。真空中の平行平板の電極(2)、f3)におい
て、片方の高周波電極(2)に高周波電力を印加し、画
電極(2)、(3)間にガス供給系統(5)により反応
ガスを供給する。このとき、画電極(2L(3)開には
プラズマが生成し、高周波電極(2)表面にはイオンシ
ースが形成され、正イオンはイオン加速電圧(自己バイ
アス)により加速され、高周波電極(2)の上のウェハ
(7)に垂直に衝突しエツチングを行う。この場合、接
地電極(3)側にも上記と同様にイオンシースが形成さ
れ、接地電極(3)の表面への正イオンの衝突により、
接地電極(3)の表面がスパッタリングされ、?肖耗さ
れる。
Next, reactions in the etching apparatus having the above configuration will be explained. In the parallel plate electrodes (2), f3) in vacuum, high frequency power is applied to one high frequency electrode (2), and a reaction gas is supplied between the picture electrodes (2) and (3) by the gas supply system (5). supply At this time, plasma is generated when the picture electrode (2L (3) is open), an ion sheath is formed on the surface of the high-frequency electrode (2), positive ions are accelerated by the ion acceleration voltage (self-bias), and the high-frequency electrode (2L (3)) is opened. ) on the wafer (7) to perform etching.In this case, an ion sheath is formed on the ground electrode (3) side in the same way as above, and positive ions are directed to the surface of the ground electrode (3). Due to the collision,
The surface of the ground electrode (3) is sputtered, ? be worn out.

このため、接地電極(2)のうち、プラズマ側は着脱可
能な電極板(8)を取付け、消耗時の交換をiff f
ffl lこしている。電極板(8)は、スパッタリン
グで飛散する金属粒子により起こるエツチング性能への
悪影響を防1卜するため、飛散しても影響の少ないアル
ミナ・コーティングの絶縁膜(10)で被われており、
この絶縁膜(10)がなくなると電極板(8)の交換が
必要になる。
For this reason, a removable electrode plate (8) is attached to the plasma side of the ground electrode (2) so that it can be replaced when worn out.
ffl I'm straining. The electrode plate (8) is covered with an insulating film (10) made of alumina coating, which has little effect even if it is scattered, in order to prevent the adverse effect on etching performance caused by metal particles scattered during sputtering.
When this insulating film (10) disappears, the electrode plate (8) needs to be replaced.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の接地ffl極(3)の電極板(8)は以−にのよ
うに構成されているので、アルミナ中コーティングが多
孔質層で機械的強度も低いためイオンスパッタリングに
弱く、特にプラズマ密度の高くなるガス噴出穴(11)
の周囲ではアルミナ・コーティングが円形状(直径0.
1に消耗し、この電極板(8)の交換頻度が高くなり、
エツチング装置の稼動率を低ドさせる原因になっている
という問題点があった。
Since the electrode plate (8) of the conventional grounded ffl electrode (3) is constructed as described above, the alumina coating is a porous layer and has low mechanical strength, making it vulnerable to ion sputtering, and particularly susceptible to plasma density. High gas ejection hole (11)
Around the periphery the alumina coating is circular (diameter 0.
1, and this electrode plate (8) needs to be replaced more frequently.
There is a problem in that it causes a decrease in the operating rate of the etching equipment.

この発明は、fz記のような問題点を解決するためにな
されたもので、N極板の寿命を長くし、稼動率が向上す
るエツチング装置を得ることを目的とする。
This invention was made in order to solve the problems described in fz, and aims to provide an etching apparatus that extends the life of the N-electrode plate and improves the operating rate.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係るエツチング装置は、接地電極の表面に石
英板を設けたものである。
The etching apparatus according to the present invention has a quartz plate provided on the surface of a ground electrode.

〔作 用〕[For production]

この発明においては、接地電極の表面に石英板を設けた
ことにより、電極板のスパッタリングに対する強度が増
大し、電極板のか命は長くなる。
In this invention, by providing a quartz plate on the surface of the ground electrode, the strength of the electrode plate against sputtering is increased, and the life of the electrode plate is extended.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。第1
図において、(13)は接地型FiA(3)の電極板(
12)を構成する金属板、(14)は金属板(13)の
表面を被う絶縁膜となる5英板、(15)は金属板(1
3)の側面を被うと共に過熱融着部(16)で石英板(
12)と−像化される石芙枠、(17)は金属板(13
)と石英板(14)との開に隙間が生ずるのを防1卜す
るために金属板(13)を貝通して設けられた複数個の
石英ビン、(18)は石英ビン(17)の頭部に設けら
れた石英用で、金属板(13)と石英板(14)とが石
英ビン(17)、石英用(18)の作用で一体化されて
いる。
An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (13) is the electrode plate (
12), (14) is the 5-E plate which becomes the insulating film covering the surface of the metal plate (13), and (15) is the metal plate (1).
3) and the quartz plate (
12) and the stone wall frame to be made into an image, (17) is a metal plate (13
) and the quartz plate (14), a plurality of quartz bottles are installed through the metal plate (13), and (18) is the quartz bottle (17). The metal plate (13) and the quartz plate (14) are integrated by the action of the quartz bottle (17) and the quartz plate (18).

次に、電極板(12)の加工手順について説明する。Next, the processing procedure for the electrode plate (12) will be explained.

まず、m体イ1−ヒげされた金属板(13)を石英板(
14)と7i灸枠(15)とで被い、金属板(13)の
外周を数点仮融着する・ その後、イi芙ビン(17)
と71英板(14)とを加熱融着部(19)で加熱融着
させ、また石英用(18)と石英ビン(17)とを加熱
融着部(20)で加熱融オ)させること(こより、金属
板(13)と石英板(14)とを−像化する。次に、石
英板(14)と石灸枠(15)とを加熱融着部(16)
にて本融着する。その後、石英板(14)を必要II7
さに仕上げ加工し、また石灸枠(15)の外周部41び
に上面をt4板(13)と同−而になるように仕−+Z
げ加工して、電極板(12)の加工は終rする。
First, m-body I1 - the shaved metal plate (13) is placed on the quartz plate (
14) and the 7i moxibustion frame (15), and temporarily fuse the outer periphery of the metal plate (13) at several points. After that, attach the 7i moxibustion frame (17).
and the 71 English plate (14) are heat-fused in the heat-fusion part (19), and the quartz plate (18) and the quartz bottle (17) are heat-fused in the heat-fusion part (20). (Thus, the metal plate (13) and the quartz plate (14) are imaged. Next, the quartz plate (14) and the stone moxibustion frame (15) are heated and fused together at the heat-fused portion (16).
Final fusion is performed at. After that, you need quartz plate (14) II7
The outer periphery 41 and top surface of the stone moxibustion frame (15) are finished to be the same as the T4 plate (13).
Then, the machining of the electrode plate (12) is completed.

1−記のように、イイ芙板(14)と金属板(13)と
の−像化に際して、石英相互を融着して一体化するため
、機械強度を確保することができ、しかも−像化された
後、金属板(13)が中骨の役割をはだす状態で機械仕
上げができるため、石英板(14)を必要厚みに薄く仕
上がることが可能になった。また、石英は組織が密で、
硬度ら高いため、イオンスパッタに対する強度か命は従
来のアルミナ・コーティングに比べ、大幅に改善され、
消耗による交換は不必要になる。
As described in section 1-1, when forming an image between the good plate (14) and the metal plate (13), the quartz pieces are fused together and integrated, so mechanical strength can be ensured and, moreover, the image is formed. After the quartz plate (14) is made into a metal plate, it can be machine finished with the metal plate (13) exposed as a backbone, making it possible to finish the quartz plate (14) as thin as necessary. In addition, quartz has a dense structure,
Due to its high hardness, its strength and durability against ion sputtering are greatly improved compared to conventional alumina coatings.
Replacement due to wear and tear becomes unnecessary.

なお、上記実施例では、金属板(13)の表面全体を石
英板(14)で被っているが、消耗度の厳しい中央部に
石英板をビン方式にて金属板に固定後、その石英板の周
囲には従来のアルミナ・コーティングを施して、石英板
とアルミナ・コーティングとを併用し−Cもよい。
In the above embodiment, the entire surface of the metal plate (13) is covered with the quartz plate (14), but after fixing the quartz plate to the metal plate using a bottle method in the central part where wear is severe, the quartz plate is removed. A conventional alumina coating may be applied around the quartz plate, and -C may be used in combination with a quartz plate and an alumina coating.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、この発明のエツチング装置は、接
地電極の表面に石英板を設けたので、接地電極の電極板
のスパッタリングに対する強度は
As explained above, in the etching apparatus of the present invention, since the quartz plate is provided on the surface of the ground electrode, the strength against sputtering of the electrode plate of the ground electrode is reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例を示すl[板の断面図、第
2図は従来のエツチング装置の一例を示す断面図、第3
図は第2図の電極板の一例を示す断面図である。 (1)・・真空容器、(2)・・高周波電極、(3)・
・接地電極、 (12)・ ・電極板、 (13)・ ・金属板、 (14)・ ・石英板。 なお、 各図中、 同一符号は同−又は相当部分を 示す。 渭2図 3:撞す色量1台 12電柚板 3:金属板 4:石英板 形3図
FIG. 1 is a cross-sectional view of a plate showing an embodiment of the present invention, FIG. 2 is a cross-sectional view of an example of a conventional etching apparatus, and FIG.
The figure is a sectional view showing an example of the electrode plate of FIG. 2. (1)...Vacuum container, (2)...High frequency electrode, (3)...
・Ground electrode, (12)・・Electrode plate, (13)・・Metal plate, (14)・・Quartz plate. In each figure, the same reference numerals indicate the same or equivalent parts. 2 diagrams 3: Color quantity 1 unit 12 electric Yuzu plate 3: Metal plate 4: Quartz plate type 3 figures

Claims (1)

【特許請求の範囲】[Claims] 真空容器内に高周波電極と接地電極とが対向して設けら
れ、高周波電極に高周波が印加されるエッチング装置に
おいて、前記接地電極の表面に石英板が設けられたこと
を特徴とするエッチング装置。
An etching apparatus in which a high frequency electrode and a ground electrode are provided facing each other in a vacuum container, and a high frequency is applied to the high frequency electrode, characterized in that a quartz plate is provided on the surface of the ground electrode.
JP17082188A 1988-07-11 1988-07-11 Etching equipment Pending JPH0221619A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17082188A JPH0221619A (en) 1988-07-11 1988-07-11 Etching equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17082188A JPH0221619A (en) 1988-07-11 1988-07-11 Etching equipment

Publications (1)

Publication Number Publication Date
JPH0221619A true JPH0221619A (en) 1990-01-24

Family

ID=15911956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17082188A Pending JPH0221619A (en) 1988-07-11 1988-07-11 Etching equipment

Country Status (1)

Country Link
JP (1) JPH0221619A (en)

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