JPH0221758U - - Google Patents
Info
- Publication number
- JPH0221758U JPH0221758U JP1988101459U JP10145988U JPH0221758U JP H0221758 U JPH0221758 U JP H0221758U JP 1988101459 U JP1988101459 U JP 1988101459U JP 10145988 U JP10145988 U JP 10145988U JP H0221758 U JPH0221758 U JP H0221758U
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- thin film
- semiconductor region
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electronic Switches (AREA)
- Thin Film Transistor (AREA)
Description
第１図、第２図、第３図及び第４図はそれぞれ
実施例を示す断面図、第５図は実施例における単
結晶シリコン膜を形成する方法を説明する断面図
である。
２，３０，４２……基板、４……発熱素子部、
６……薄膜トランジスタ部、１０ａ，１０ｂ……
単結晶シリコン膜、１８……ポリイミド膜、２０
……発熱素子、２２……薄膜メタル配線、３２…
…ＥＬ素子部、４０……発光層、４４……センサ
部、４８，４９……アモルフアスシリコン膜。
FIGS. 1, 2, 3, and 4 are cross-sectional views showing examples, respectively, and FIG. 5 is a cross-sectional view explaining a method of forming a single crystal silicon film in the example. 2, 30, 42...Substrate, 4...Heating element section,
6... Thin film transistor section, 10a, 10b...
Single crystal silicon film, 18... Polyimide film, 20
... Heat generating element, 22 ... Thin film metal wiring, 32 ...
... EL element section, 40 ... light emitting layer, 44 ... sensor section, 48, 49 ... amorphous silicon film.
Claims (1)
て同一基板上に単結晶半導体領域と誘電体領域と
が形成されており、単結晶半導体領域には電気回
路が形成され、該電体領域には入出力素子が形成
され、両者の間が薄膜メタル配線により接続され
ている電子装置。 A single crystal semiconductor thin film is formed on a portion of the substrate, and a single crystal semiconductor region and a dielectric region are formed on the same substrate, an electric circuit is formed in the single crystal semiconductor region, and a dielectric region is formed in the single crystal semiconductor region. An electronic device in which input/output elements are formed and the two are connected by thin film metal wiring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988101459U JPH0221758U (en) | 1988-07-28 | 1988-07-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988101459U JPH0221758U (en) | 1988-07-28 | 1988-07-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0221758U true JPH0221758U (en) | 1990-02-14 |
Family
ID=31330475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988101459U Pending JPH0221758U (en) | 1988-07-28 | 1988-07-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0221758U (en) |
-
1988
- 1988-07-28 JP JP1988101459U patent/JPH0221758U/ja active Pending