JPH0221938A - Circular heating fluidized bed reactor - Google Patents

Circular heating fluidized bed reactor

Info

Publication number
JPH0221938A
JPH0221938A JP8387689A JP8387689A JPH0221938A JP H0221938 A JPH0221938 A JP H0221938A JP 8387689 A JP8387689 A JP 8387689A JP 8387689 A JP8387689 A JP 8387689A JP H0221938 A JPH0221938 A JP H0221938A
Authority
JP
Japan
Prior art keywords
heating zone
fluidized bed
particles
reaction zone
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8387689A
Other languages
Japanese (ja)
Inventor
Slooten Richard A Van
リチャード、アンドリュー、バン、スルーテン
Ravi Prasad
ラビ、プラサド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of JPH0221938A publication Critical patent/JPH0221938A/en
Pending legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/24Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B01J8/38Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with fluidised bed containing a rotatable device or being subject to rotation or to a circulatory movement, i.e. leaving a vessel and subsequently re-entering it
    • B01J8/384Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with fluidised bed containing a rotatable device or being subject to rotation or to a circulatory movement, i.e. leaving a vessel and subsequently re-entering it being subject to a circulatory movement only
    • B01J8/386Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with fluidised bed containing a rotatable device or being subject to rotation or to a circulatory movement, i.e. leaving a vessel and subsequently re-entering it being subject to a circulatory movement only internally, i.e. the particles rotate within the vessel
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1836Heating and cooling the reactor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1845Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles with particles moving upwards while fluidised
    • B01J8/1854Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles with particles moving upwards while fluidised followed by a downward movement inside the reactor to form a loop
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008Controlling the process
    • B01J2208/00017Controlling the temperature
    • B01J2208/00106Controlling the temperature by indirect heat exchange
    • B01J2208/00168Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles
    • B01J2208/00203Coils
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008Controlling the process
    • B01J2208/00017Controlling the temperature
    • B01J2208/00327Controlling the temperature by direct heat exchange
    • B01J2208/00336Controlling the temperature by direct heat exchange adding a temperature modifying medium to the reactants
    • B01J2208/0038Solids
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008Controlling the process
    • B01J2208/00017Controlling the temperature
    • B01J2208/00389Controlling the temperature using electric heating or cooling elements
    • B01J2208/00407Controlling the temperature using electric heating or cooling elements outside the reactor bed
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008Controlling the process
    • B01J2208/00017Controlling the temperature
    • B01J2208/00477Controlling the temperature by thermal insulation means
    • B01J2208/00495Controlling the temperature by thermal insulation means using insulating materials or refractories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008Controlling the process
    • B01J2208/00017Controlling the temperature
    • B01J2208/0053Controlling multiple zones along the direction of flow, e.g. pre-heating and after-cooling

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)

Abstract

PURPOSE: To pyrolyze silane-contg. gas and to obtain high-purity polycrystalline silicon product particles by providing the peripheral heating zone enclosing an internal fluidized bed reaction zone with an upper inlet for introducing the particles from the fluidized bed and a lower outlet for introducing the heated particles to the internal reaction zone. CONSTITUTION: The silicon particles 16 pass the upper inlet 13 and enter the heating zone annulus 27 where the silicon particles begin to fluidize at the fluidizing gas velocity lower at which the particles pass the heating zone annulus 27 than the gas velocity in the internal fluidized bed reaction zone 25. The silicon particles 24 beginning to fluidize downwardly pass the peripheral heating zone annulus 27, where the particles receive heat from a heat source 14. The silicon particles 24 are then introduced from the lower inlet 17 of the peripheral heating zone annulus 27 into the fluidized bed reaction zone 23. On the other hand, the silane feed gas entering the fluidized bed reaction zone 23 via a perforated plate 2 is pyrolyzed to silicon, which is deposited on the silicon particles 16. The silicon particles 16 increase their sizes, thereby forming the silicon product parts 19.

Description

【発明の詳細な説明】 本発明は改良された加熱流動床反応器、及びそのような
反応器を加熱する方法に関する。好ましい具体化におい
ては、本発明はシラン含有ガスの熱分解による多結晶性
ケイ素の製造に使用する改良された加熱流動床反応器に
関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improved heated fluidized bed reactor and method of heating such a reactor. In a preferred embodiment, the present invention is directed to an improved heated fluidized bed reactor for use in the production of polycrystalline silicon by pyrolysis of silane-containing gases.

本発明はシラン含有ガスをケイ素(シリコン)に熱分解
することについての好ましい具体化に関するものである
。本発明は熱のインプットを必要とする流動床操作の他
の型のものにも等しく適用し得るものである。このよう
な操作の例には、粒子の流動床が熱のインプットを必要
とする接触反応、イオン交換反応、分離操作などが含ま
れる。
The present invention is directed to preferred embodiments of the pyrolysis of silane-containing gases to silicon. The invention is equally applicable to other types of fluidized bed operations requiring heat input. Examples of such operations include catalytic reactions, ion exchange reactions, separation operations, etc. where a fluidized bed of particles requires heat input.

ここで用いられる「不均一分解」は、分解がガスと固体
相の間の境界で起こるときのような二つまたはそれ以上
の相で起こる、シランまたはノ・ロシランのケイ素への
還元をいう。この不均一分解の結果、ケイ素が流動床の
ケイ素粒子の上に、または流動床反応器の内面に沈積す
ることになる。
As used herein, "heterogeneous decomposition" refers to the reduction of silane or silane to silicon that occurs in two or more phases, such as when decomposition occurs at the interface between a gas and a solid phase. This heterogeneous decomposition results in silicon being deposited on the silicon particles of the fluidized bed or on the internal surfaces of the fluidized bed reactor.

「均一分解」は、ガス相のような単一の相に起こり、そ
してミクロンまたは1ミクロンよυ小さい(サブミクロ
ン)大きさの範囲の大きい表面積のケイ素粉末またはダ
ストを生ずる。
"Homogeneous decomposition" occurs in a single phase, such as a gaseous phase, and produces a high surface area silicon powder or dust in the micron or submicron size range.

一般に、与えられた温度で、シラン及びノ10シランの
分解は、7ラン及びノ・ロシラン含有ガスの濃度に依存
して不均一および/または均一である。
Generally, at a given temperature, the decomposition of silanes and silanes is heterogeneous and/or uniform depending on the concentration of the silane and silane-containing gases.

一般に、低いシラン及び/又はノ・ロシランの供給濃度
は、シラン含有ガスとノ・ロシラン含有ガスのケイ素へ
の分解を不均一様式に維持するために望ましい。しかし
ながら、シラン含有ガス及び/又はハロシラン含有ガス
の供給濃度を非常に低くすると、ケイ素の高い生産率が
得られない。
Generally, low silane and/or non-rosilane feed concentrations are desirable to maintain the decomposition of the silane-containing gas and the non-rosilane-containing gas to silicon in a non-uniform manner. However, if the feed concentration of the silane-containing gas and/or the halosilane-containing gas is too low, a high production rate of silicon cannot be obtained.

「ケイ素種粒子」という用語は、大きさが約50ミクロ
ンから約400ミクロンの範囲にわたる流動床の粒子を
意味する。そのような粒子はケイ素がその上に沈積され
ると生長して、太き(なり、それは結局ケイ素生成物粒
子として捕集される。
The term "silicon seed particles" means fluidized bed particles ranging in size from about 50 microns to about 400 microns. Such particles grow and become thicker as silicon is deposited thereon, which is eventually collected as silicon product particles.

「ケイ素生成物粒子」は、少なくとも約400ミクロン
の大きさに、好ましくは約400ミクロンから約130
0ミクロンの大きさの範囲にわたって大きくなったケイ
素種粒子である。そのようなケイ素生成物粒子は、反応
域の底部近くの捕集域で分離し、そして慣用の手段で回
収できる。「ケイ素粒子」という用語は、流動床のケイ
素種粒子とケイ素生成物粒子の両方を含む。
"Silicon product particles" are at least about 400 microns in size, preferably from about 400 microns to about 130 microns in size.
Silicon seed particles grown over a size range of 0 microns. Such silicon product particles can be separated in a collection zone near the bottom of the reaction zone and recovered by conventional means. The term "silicon particles" includes both fluidized bed silicon seed particles and silicon product particles.

「ケイ素粉末」という用語は、シラン及び/又はハロシ
ラン含有ガスの均一分解に起因するほぼミクロンから1
ミクロンより小さい(サブミクロン)範囲の大きい表面
積のケイ素をいう。
The term "silicon powder" refers to powders of approximately 1 to 1 micron, which result from the homogeneous decomposition of silane and/or halosilane-containing gases.
Refers to silicon with a large surface area in the submicron range.

ここで用いられているように、「シラン含有ガス」とい
う用語は、別に示さない限り、シラン及び/又はハロシ
ランの両方またはどちらか一方を含有するガスをいう。
As used herein, the term "silane-containing gas" refers to a gas containing silane and/or halosilane, unless otherwise specified.

ここで用いられる「全流動化ガス」という用語は、シラ
ン含有ガスと、ケイ素粒子の流動化の際に助けるために
及び/又は反応速度或は熱伝達を制御するために流動床
反応器に加えられる任意他の付加的なキャリヤーガスと
の組み合わせを指す。
As used herein, the term "total fluidizing gas" refers to the silane-containing gas and any gas added to the fluidized bed reactor to aid in fluidizing the silicon particles and/or to control reaction rates or heat transfer. Refers to the combination with any other additional carrier gas.

多結晶ケイ素は、シラン含有ガスの流れを、反応域に浮
遊されるケイ素粒子の加熱流動床の中へ導入することに
よって製造する。これらのケイ素粒子は、反応域を介し
て入って来るシラン含有ガスとキャリヤーガスとの上向
きの流れにより浮遊させる。反応域を通る全ガス速度は
ケイ素粒子の最小流動化速度以上に保たれる。反応域の
ケイ素粒子の温度は、シラン含有ガスの分解温度とケイ
素の融点温度との間に維持される。シラン含有ガスは、
分解されてケイ素を形成し、このケイ素がケイ素粒子の
表面に沈積する。ケイ素がケイ素粒子の上に沈積するに
つれて、そのような粒子が大きくなり、そして流動床の
底部近くの捕集域で分離する。捕集した生成物粒子は慣
用の手段により捕集域から回収する。
Polycrystalline silicon is produced by introducing a stream of silane-containing gas into a heated fluidized bed of silicon particles suspended in a reaction zone. These silicon particles are suspended by the upward flow of silane-containing gas and carrier gas entering through the reaction zone. The total gas velocity through the reaction zone is maintained above the minimum fluidization velocity of the silicon particles. The temperature of the silicon particles in the reaction zone is maintained between the decomposition temperature of the silane-containing gas and the melting point temperature of silicon. The silane-containing gas is
It decomposes to form silicon, which is deposited on the surface of the silicon particles. As silicon is deposited onto silicon particles, such particles become larger and separate in a collection zone near the bottom of the fluidized bed. The trapped product particles are recovered from the collection zone by conventional means.

シラン含有ガスを、流動床反応域へ、その底部から慣用
のプラクテス、例えばガス分配器にしたがって導入する
ことができる。
The silane-containing gas can be introduced into the fluidized bed reaction zone from its bottom according to conventional practices, such as a gas distributor.

シラン含有ガスは希釈せずに導入してもよいし或は該ガ
スは水素、或はアルゴン、ヘリウムなどのような不活性
キャリヤーガスで希釈してもよい。
The silane-containing gas may be introduced undiluted or it may be diluted with hydrogen or an inert carrier gas such as argon, helium, or the like.

ガス分配帯域において、冷却水、窒素又はその他類似物
により分配器表面は約200℃から約400℃に亘る温
度に冷却される。冷却器温度はシラン含有ガスの早期分
解を阻止するために保持する。
In the gas distribution zone, the distributor surface is cooled by cooling water, nitrogen, or the like to a temperature ranging from about 200°C to about 400°C. The cooler temperature is maintained to prevent premature decomposition of the silane-containing gas.

ここで用いられているように、「平均直径」という用語
は、与えられた粒子直径と、与えられた直径の粒子がも
っていると見做されるそれぞれの重さ部分との商の和を
意味する。流動化ガス速度は、流動床の種粒子のための
最小流動化速度の約4〜6倍であるのが好ましい。最小
流動化速度は、次の等式のような当該技術で知られた慣
用の手段により決定できる。
As used herein, the term "average diameter" means the sum of the quotients of a given particle diameter and the respective weight fraction that a particle of a given diameter is assumed to have. do. Preferably, the fluidizing gas velocity is about 4 to 6 times the minimum fluidizing velocity for the seed particles of the fluidized bed. The minimum fluidization rate can be determined by conventional means known in the art, such as the following equation:

ここで ■。=流動化のための最小の表面ガス速度(f t/s
 )D =床の粒子の平均直径(、、) ρ =流動化ガスの密度(g/y++3)ρ =粒子の
密度(gzに13) φ8 =粒子の球体度 6 =最小流動化のときの粒子の床の空隙率μ =流動
化ガスの絶対粘度(jb/fft−5) =重力の加速
度(ft/sり 最小流動化速度は、ガス粘度およびガス密度、ならびに
平均粒子直径、粒子形状および空隙率分の強力な関数で
ある。従って、最小流動化速度は上記ファクタの小さな
変化で広い範囲をカバーする。
Here ■. = minimum surface gas velocity for fluidization (f t/s
) D = average diameter of the particles in the bed (,,) ρ = density of the fluidizing gas (g/y++3) ρ = density of the particles (13 in gz) φ8 = sphericity of the particles 6 = particles at minimum fluidization Porosity of the bed μ = Absolute viscosity of fluidizing gas (jb/fft-5) = Acceleration of gravity (ft/s) Minimum fluidization velocity depends on gas viscosity and gas density, as well as average particle diameter, particle shape and void Therefore, the minimum fluidization velocity covers a wide range with small changes in the above factors.

第1図において、シラン含有ガスの熱分解による高純度
多結晶ケイ素生成物粒子19の製造に有用な反応器にお
いてケイ素粒子16が流動化される。導管21における
シラン含有ガスが、流動床反応帯域23の直下に配置さ
れたガス分配板の部分25の下方の流動床反応器12の
底部に入る。
In FIG. 1, silicon particles 16 are fluidized in a reactor useful for producing high purity polycrystalline silicon product particles 19 by pyrolysis of silane-containing gases. The silane-containing gas in conduit 21 enters the bottom of fluidized bed reactor 12 below a portion 25 of the gas distribution plate located directly below fluidized bed reaction zone 23 .

管路21における水素ガスもまた周辺加熱帯域環27の
直下にあるガス分配板の部分26の下方の流動床反応容
器12の底部に入る。流動床尺八12の底部に導入され
る水素ガス及びシラン含有ガスは、それらガスがガス分
配板を通過した後まで互に接触することができないよう
に壁3oにより隔離される。ガス分配器上の流動床反応
器12内の水素ガスとシラン含有ガスとの混合は、加熱
された粒子24を流動床反応帯域23に再導入させるに
必要な間隙を考慮に入れて内部反応帯域壁15の下端を
分配板にできるだけ接近させて配置することにより好ま
しく制限される。水素ガスはガス分配板の部分26を上
方に通過し、加熱帯域環27における粒子24を、シラ
ン含有ガスの実質量が水素ガス中に混入されることなく
、加熱帯域環27における粒子24を流動化する。シラ
ン含有ガスは粒子160床の直下の流動床反応帯域23
に入り、好ましくはまっすぐに上方へ通り、水素中に混
入することなく床23を流動化させる。
Hydrogen gas in line 21 also enters the bottom of the fluidized bed reactor vessel 12 below the portion 26 of the gas distribution plate immediately below the peripheral heating zone ring 27. The hydrogen gas and silane-containing gas introduced into the bottom of the fluidized bed shakuhachi 12 are separated by the wall 3o so that they cannot come into contact with each other until after they have passed through the gas distribution plate. The mixing of hydrogen gas and silane-containing gas in the fluidized bed reactor 12 on the gas distributor is controlled by the internal reaction zone, taking into account the gap necessary to reintroduce the heated particles 24 into the fluidized bed reaction zone 23. It is preferably limited by locating the lower end of the wall 15 as close as possible to the distribution plate. Hydrogen gas passes upwardly through portion 26 of the gas distribution plate and flows through particles 24 in heating zone ring 27 without a substantial amount of silane-containing gas being mixed into the hydrogen gas. become The silane-containing gas is supplied to the fluidized bed reaction zone 23 directly below the bed of particles 160.
and preferably passes straight upwards to fluidize the bed 23 without contaminating the hydrogen.

生ずることのある、いかなる混合も、シラン含有ガスが
水素含有ガス中に混入するのとは反対に、水素ガスがシ
ラン含有ガス中に混入することにより生ずることが好ま
しい。外部加熱帯域壁10(例えば石英ライナー)をシ
ラン含有ガスから隔離することにより、外部加熱帯域壁
10の熱伝達表面上に析出するケイ素の量が最小化され
る。
Any mixing that may occur preferably occurs by mixing hydrogen gas into the silane-containing gas, as opposed to mixing the silane-containing gas into the hydrogen-containing gas. By isolating the external heating zone wall 10 (eg, a quartz liner) from the silane-containing gas, the amount of silicon deposited on the heat transfer surface of the external heating zone wall 10 is minimized.

周辺加熱帯域環27を通過したケイ素粒子16により、
シかも内部反応帯域壁15を通して流動床反応帯域23
に熱が供給される。周辺加熱帯域環27は流動床反応帯
域23の内部反応帯域壁15と反応容器12の外部加熱
帯域壁10との間の空間を占有する1周辺加熱帯域環2
7は側面的に閉じ込められたケイ素粒子16を含有する
。該ケイ素粒子は上部入口13を通って加熱帯域環27
に入ったものである。ケイ素粒子16は反応帯域23に
おけるガス速度に比較して加熱帯域27を通過する、よ
シ低い流動ガス速度の故に流動化開始状態にある。熱は
熱源14から外部加熱帯域壁10を通して伝導熱伝達に
より流動化開始されたケイ素粒子24に供給される。流
動化開始されたケイ素粒子24は周辺加熱帯域環27を
下方に通過しそこで粒子24が熱源14から熱を収受す
る。周辺加熱帯域環27の底部付近にケイ素粒子24を
加熱帯域環27から流動床反応帯域23に導入するため
の出口17がある。加熱帯域環の下部入口17は成る種
のタイプの駆動力(パルスガスジェットのような)を使
用して流動床反応帯域23へのケイ素粒子24の導入を
促進することができる。
Due to the silicon particles 16 passing through the peripheral heating zone ring 27,
The fluidized bed reaction zone 23 may also pass through the internal reaction zone wall 15.
heat is supplied to The peripheral heating zone ring 27 occupies the space between the internal reaction zone wall 15 of the fluidized bed reaction zone 23 and the external heating zone wall 10 of the reaction vessel 12.
7 contains laterally confined silicon particles 16. The silicon particles pass through the upper inlet 13 to the heating zone ring 27.
This is what was included in the . The silicon particles 16 are in a fluidized state due to the lower fluidizing gas velocity passing through the heating zone 27 compared to the gas velocity in the reaction zone 23. Heat is supplied from the heat source 14 through the external heating zone wall 10 to the fluidized silicon particles 24 by conductive heat transfer. The fluidized silicon particles 24 pass downwardly through a peripheral heating zone ring 27 where the particles 24 pick up heat from the heat source 14 . Near the bottom of peripheral heating zone ring 27 there is an outlet 17 for introducing silicon particles 24 from heating zone ring 27 into fluidized bed reaction zone 23 . The lower inlet 17 of the heating zone ring may use some type of driving force (such as a pulsed gas jet) to facilitate the introduction of silicon particles 24 into the fluidized bed reaction zone 23.

穿孔板25を介して流動床反応帯域23に入るシラン供
給ガスはケイ素に熱分解されて、ケイ素粒子16上に析
出する。このケイ素粒子16は太き(なって、ケイ素生
成物粒子19を形成する。この生成物粒子19は流動床
反応帯域23の底部付近の捕集帯域において分離し、矢
印(→)22によって示されるように集められる。副生
物の水素と、床の底部に入って来る他の流動化ガスとは
、上方出口11を介して流動床反応器23を出て行(。
Silane feed gas entering fluidized bed reaction zone 23 via perforated plate 25 is pyrolyzed to silicon and precipitated on silicon particles 16 . The silicon particles 16 become thick and form silicon product particles 19 which separate in a collection zone near the bottom of the fluidized bed reaction zone 23 and are indicated by arrows (→) 22. The by-product hydrogen and other fluidizing gases entering the bottom of the bed leave the fluidized bed reactor 23 via the upper outlet 11 (.

加熱帯域環状部27は、シラン含有ガスから外側加熱帯
域壁10を隔離し、その結果ケイ素の析出を阻止して、
加熱帯域27への熱伝達効率を減少させる条件となる。
The heating zone annulus 27 isolates the outer heating zone wall 10 from the silane-containing gas, thereby inhibiting silicon precipitation.
This is a condition that reduces the efficiency of heat transfer to the heating zone 27.

ケイ素は内部反応帯域23の壁15に析出して、その結
果壁15を介して熱伝達効率を減少させることになるけ
れども、そのような減少は、熱を反応帯域23に伝達す
る主要な源は、内部反応帯域23に再び入って来る加熱
されたケイ素粒子24によって導入される熱であるから
、最小限度の影響である。
Although silicon will precipitate on the walls 15 of the internal reaction zone 23, resulting in a reduction in heat transfer efficiency through the walls 15, such a reduction may be due to the fact that the primary source of heat transfer to the reaction zone 23 is , the heat introduced by the heated silicon particles 24 re-entering the internal reaction zone 23 has minimal impact.

第2図に関し、周囲加熱帯域環部27は、反応帯域23
の同心的に配置された壁15と外側加熱帯域壁10とに
よって形成される。熱は、加熱源14により、外側反応
帯域壁10を介して加熱帯域環部に供給される0反応帯
域壁15と、外部加熱帯域壁10との間の環状域に、初
期流動状態のケイ素粒子24がある。このケイ素粒子2
4は、上部入口13を介して加熱帯域環部27に入って
来た反応帯域23のケイ素粒子16よシ成り、最終的に
反応帯域23の中に再導入される。
With respect to FIG. 2, the peripheral heating zone ring 27
is formed by concentrically arranged walls 15 and an outer heating zone wall 10. Heat is supplied to the heating zone annulus by a heating source 14 through the outer reaction zone wall 10. In the annular region between the reaction zone wall 15 and the outer heating zone wall 10, silicon particles in an initially fluidized state are supplied. There are 24. This silicon particle 2
4 consists of the silicon particles 16 of the reaction zone 23 which entered the heating zone annulus 27 via the upper inlet 13 and are finally reintroduced into the reaction zone 23.

ここに記載した本発明の好ましい具体例への改変及び変
更は本発明の精神及び範囲を逸脱することに行うことが
できる。次に掲げる実施例は本発明を説明するものであ
るが、この実施例は限定を意図したものではない。
Modifications and changes to the preferred embodiments of the invention described herein may be made without departing from the spirit and scope of the invention. The following examples are illustrative of the invention but are not intended to be limiting.

/ / 実新I鉗ユ 以下の実施例は第1図に例証した流動床反応器に類似の
もので行う。流動床反応領域は、30cmの直径を持つ
反応領域石英製壁によって制限されている。流動床反応
領域は、60cmの直径を有しそしてl0CT11の厚
さの絶縁体で囲まれているステンレス製ジャケント内に
包み込まれている。
The following examples are carried out in a fluidized bed reactor similar to that illustrated in FIG. The fluidized bed reaction zone is bounded by a reaction zone quartz wall with a diameter of 30 cm. The fluidized bed reaction zone is encased in a stainless steel jacket having a diameter of 60 cm and surrounded by insulation 10CT11 thick.

1 、200°Cで運転するカンタル・ヒーターをステ
ンレス製ジャケットの内壁に取付ける。このヒーターは
約50cmの内径を有している。反応領域壁とカンタル
・ヒーターとの間に、内径39.5cmで厚さ0.5c
mの石英製ライナーかあ、る。石英製ライナーは反応領
域内壁と石英製ライナーとの間に生じる厚さ4.75c
mの環状加熱領域をカンタル・ヒーターから隔離してい
る。流動床反応領域は直径的300〜800 ミクロン
の範囲の珪素粒子を含有qでいる。流動床反応領域の粒
子は20容量χのシランと80容Nχの水素との気体状
混合物によって流動させられている。環状加熱領域に占
める粒子は100容量2の水素によって流動させられる
。シランと水素ガスを、反応領域及び環状加熱領域の下
に位置する慣用のガス分配器を通って流動床反応領域及
び環状加熱領域に入れる。水素ガス及びシラン含有ガス
はガス分配器より下流で、水素ガスとシラン含有ガスと
を混合させない別の室に導入する。水素ガス(773°
K)を、環状加熱領域の下にあるガス分配器の位置より
下の室に入れる。シラン含有ガス(300’ K)は、
流動床反応領域の下にあるガス分配器の位置の直ぐ下の
室に入れる。流動床反応領域の為のガス分配器における
シラン含有ガスの見掛は速度は約70cTIl/秒であ
り、反応領域での800ミクロンの粒子の最小流速に相
当する。
1. A Kanthal heater operating at 200°C is attached to the inner wall of the stainless steel jacket. This heater has an internal diameter of approximately 50 cm. Between the reaction zone wall and the Kanthal heater, an internal diameter of 39.5 cm and a thickness of 0.5 cm
M's quartz liner. The quartz liner has a thickness of 4.75 cm between the reaction area inner wall and the quartz liner.
m annular heating area is isolated from the Kanthal heater. The fluidized bed reaction zone contains silicon particles ranging from 300 to 800 microns in diameter. The particles in the fluidized bed reaction zone are fluidized by a gaseous mixture of 20 volumes χ of silane and 80 volumes Nχ of hydrogen. The particles occupying the annular heating zone are fluidized by 100 volumes of hydrogen. Silane and hydrogen gas enter the fluidized bed reaction zone and annular heating zone through a conventional gas distributor located below the reaction zone and annular heating zone. The hydrogen gas and the silane-containing gas are introduced downstream from the gas distributor into a separate chamber in which the hydrogen gas and the silane-containing gas are not mixed. Hydrogen gas (773°
K) in a chamber below the location of the gas distributor below the annular heating zone. The silane-containing gas (300'K) is
into a chamber directly below the location of the gas distributor below the fluidized bed reaction zone. The apparent velocity of the silane-containing gas in the gas distributor for the fluidized bed reaction zone is about 70 cTIl/sec, corresponding to a minimum flow rate of 800 micron particles in the reaction zone.

ガス分配器での水素ガスの見掛は速度は約42cm7秒
である。シランガス分配器は、大きい方の末端において
約30cmの直径及び約5cmの高さを有する小さい方
の末端において約5cmの直径を有している。ステンレ
ス製ジャケットの部分は、92cmの外径及び9cmの
厚さを持つ三つのフランジによって適切に保持されてい
る。反応容器は263.0cmの高さを有しそして、1
50.0 cmの高さの流動床の頂部より上に113.
Ocm伸びている。
The apparent velocity of hydrogen gas at the gas distributor is approximately 42 cm/7 seconds. The silane gas distributor has a diameter of about 5 cm at the small end with a diameter of about 30 cm at the large end and a height of about 5 cm. The stainless steel jacket section is held in place by three flanges with an outside diameter of 92 cm and a thickness of 9 cm. The reaction vessel has a height of 263.0 cm and 1
113. above the top of the fluidized bed with a height of 50.0 cm.
It is growing by 0cm.

反応器の圧力は約2気圧に維持する。The reactor pressure is maintained at approximately 2 atmospheres.

流動床の頂部の温度は923°にでありそして流動床底
部の温度は823°にである。シラン含有ガスが通過す
る分配器円錐体部分の温度は、雰囲気温度の約300°
にと共に523°Kに維持する。水素ガスを環状部に導
入するのに使用される分配器の部分の温度は約773°
にである。
The temperature at the top of the fluidized bed is 923° and the temperature at the bottom of the fluidized bed is 823°. The temperature of the distributor cone through which the silane-containing gas passes is approximately 300° below the ambient temperature.
and maintained at 523°K. The temperature of the portion of the distributor used to introduce hydrogen gas into the annulus is approximately 773°
It is.

加熱領域環状部の温度は約933°にである。流動床の
濃密相は約0.46の空隙率を示しそして環状加熱領域
は約0.46の空隙率を示す。流動床の熱移動特性を以
下に総括掲載するニ ライナーの熱伝導率; 0.0116cal/ cm2
・秒・’cライナーの放射率:   0.60 絶縁体の熱伝導率; 3.45X10−5cal/ C
m2−秒・’c珪素の熱容量;    0.168 c
al/g H’c加熱領域環状部を通りそして流動床反
応領域に入る粒子の質量流速は11 kg/秒である。
The temperature of the heating zone annulus is approximately 933°. The dense phase of the fluidized bed exhibits a porosity of about 0.46 and the annular heating zone exhibits a porosity of about 0.46. The heat transfer characteristics of the fluidized bed are summarized below. Thermal conductivity of Niliner: 0.0116 cal/cm2
・sec・'c Emissivity of liner: 0.60 Thermal conductivity of insulator; 3.45X10-5cal/C
m2-sec・'c Heat capacity of silicon; 0.168 c
The mass flow rate of particles through the al/g H'c heating zone annulus and into the fluidized bed reaction zone is 11 kg/sec.

環状部を通る下方への粒子速度は8.62 cm/秒で
ある。カンタル・ヒーターから反応器への全電力入力量
は、外側加熱領域壁を形成する石英製ライナーを囲む約
115.0 cmの高さのカンクル・ヒーターを用いて
110キロワツトである。
The downward particle velocity through the annulus is 8.62 cm/sec. The total power input to the reactor from the Kanthal heater is 110 kilowatts with a canthal heater approximately 115.0 cm tall surrounding a quartz liner forming the outer heating zone wall.

熱損失及び以下のものに起因する入力量を考慮し:(1
)シランの分配器;(2)生成物及び流出流;(3)フ
ランジ;(4)流動床の頂部と底部からの放射:(5)
絶縁及び(6)流動床壁を通してのカンタル・ヒーター
からの熱移動: そして以下のことを仮定した時:(1)流動床反応領域
の温度が該流動床の底部の小さな領域を除いたあらゆる
所で一定である;(2)加熱領域環状部の温度があらゆ
る所で一定である:(3)反応領域と環状加熱領域との
間の石英製壁を通る熱移動が無視される;(4)石英製
ライナーの温度が軸方向で一様である;(5)シラン分
配器温度が一定でありそして流動床とシラン分配器との
間の熱移動が流動床の温度と分配器の温度によって決定
される;(6)水素分配の温度が水素供給ガスと同しで
ある:(7)ヒーターとライナーとの間の熱移動が放射
だけによって生じる;(8)シラン供給流れが雰囲気温
度で分配器に入りそして生成物の珪素及び流出ガスが流
動床の温度で反応器を離れる;(9)循環する珪素粒子
が流動床の温度で環状加熱領域に入りそして環状加熱領
域を該加熱領域環状部の温度で離れる:及び00)流動
床とヒーターとが黒体として放射する; 流動床の温度は、シラン含有ガスを珪素に経済的分解す
るのに明らかに適する650°Cであると決められる。
Taking into account heat losses and inputs due to: (1
) silane distributor; (2) product and effluent streams; (3) flanges; (4) radiation from the top and bottom of the fluidized bed; (5)
insulation and (6) heat transfer from the Kanthal heater through the fluidized bed walls: and assuming that: (1) the temperature in the fluidized bed reaction zone is constant everywhere except for a small area at the bottom of the fluidized bed; (2) the temperature of the heating zone annulus is constant everywhere; (3) heat transfer through the quartz wall between the reaction zone and the heating zone is ignored; (4) the temperature of the quartz liner is uniform in the axial direction; (5) the silane distributor temperature is constant and the heat transfer between the fluidized bed and the silane distributor is determined by the temperature of the fluidized bed and the temperature of the distributor; (6) the hydrogen distribution temperature is the same as the hydrogen feed gas; (7) heat transfer between the heater and liner occurs solely by radiation; (8) the silane feed stream is at ambient temperature in the distributor (9) The circulating silicon particles enter the annular heating zone at the temperature of the fluidized bed and the product silicon and the effluent gas leave the reactor at the temperature of the fluidized bed; Separated at temperature: and 00) The fluidized bed and heater radiate as a black body; The temperature of the fluidized bed is determined to be 650° C., which is clearly suitable for economical decomposition of silane-containing gas to silicon.

本発明は、流動床、例えばシランを珪素に分解する為の
流動床に、多量の熱損失のある冷却される分配器に近い
領域で高い熱流動率(heatflux)を提供する。
The present invention provides a fluidized bed, such as a fluidized bed for decomposing silane to silicon, with high heat flux in the region close to the cooled distributor where there is a large amount of heat loss.

また本発明は、加熱面に珪素が沈着するのを、シラン含
有供給ガスを加熱された反応器壁から離すことによって
抑制するかまたは回避することができるシラン熱分解反
応器に等しく重要な長所を有している。更に、内部反応
領域壁への珪素の沈着で生しる熱移動効率の如何なる低
下も最小である。何故ならば、内部反応領域への熱移動
の第一の原因が環状加熱領域の加熱された粒子を内部反
応領域に導入することであるからである。
The present invention also provides an equally important advantage in silane pyrolysis reactors where silicon deposition on heated surfaces can be suppressed or avoided by directing the silane-containing feed gas away from the heated reactor walls. have. Furthermore, any reduction in heat transfer efficiency caused by silicon deposition on the internal reaction zone walls is minimal. This is because the primary source of heat transfer to the internal reaction zone is the introduction of the heated particles of the annular heating zone into the internal reaction zone.

本発明を、有利な適用例及びパラメーターを含む種々の
態様に関して説明した。前記の明細書を読んだ当業者は
、ここに説明した広い概念から逸脱していない種々の変
更、均等物の置換及び他の改変を行うことができるであ
ろう。従って、ここで特許される特許請求の範囲は添付
した特許請求の範囲に含まれる規定及びそれに均等な範
囲によってのみ制限されるものである。
The invention has been described in terms of various embodiments, including advantageous applications and parameters. Those skilled in the art after reading the above specification will be able to make various changes, equivalent substitutions, and other modifications without departing from the broad concepts described herein. Accordingly, the scope of the claims as claimed herein is to be limited only by the provisions contained in the appended claims and the scope of equivalents thereto.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の好ましい具体例による環状加熱流動
床反応器の断面を説明するものである。 第2図は本発明の好ましい具体例による環状流動床反応
器の頂部断面図である。 411[人 ユニオン、カーバイド、コーポレーション
手 続 補 r践1年 1月 2日
FIG. 1 illustrates a cross section of a heated annular fluidized bed reactor according to a preferred embodiment of the invention. FIG. 2 is a top cross-sectional view of an annular fluidized bed reactor according to a preferred embodiment of the invention. 411 [Person Union, Carbide, Corporation Proceedings Practice 1 January 2

Claims (1)

【特許請求の範囲】 1、(a)反応容器; (b)内部流動床反応帯域を囲む周辺加熱帯域環を定め
る、反応容器内に設置される手段であつて、ここに該加
熱帯域環は流動化開始状態における流動床からの、側面
的に閉じ込められた粒子を含有し、該加熱帯域環は、流
動床から粒子を導入するための上部入口と、加熱された
粒子を内部反応帯域に導入するための下部出口とを包含
し、加熱帯域環の下部出口を通つて内部反応帯域に入る
加熱帯域環の加熱された粒子は内部反応帯域に熱を供給
するものである前記手段; (c)内部流動床反応帯域を定める手段; 及び (d)加熱帯域環に熱を供給するための加熱手段; を包含して成る改良された加熱流動床反応器。 2、周辺加熱帯域環を定める手段が内部反応帯域壁及び
外部加熱帯域壁を包含する請求項1記載の改良された加
熱流動床反応器。 3、加熱手段が、周辺加熱帯域環を部分的に定める外部
加熱帯域壁に熱を供給する請求項2記載の改良された加
熱流動床反応器。 4、周辺加熱帯域環を部分的に定める外部加熱帯域が石
英ライナーである請求項2記載の改良された加熱流動床
反応器。 5、内部流動床反応帯域を定める手段が、加熱帯域環を
部分的に定める内部反応帯域壁を包含する請求項2記載
の改良された加熱流動床反応器。 6、周辺加熱帯域環の下部出口が、加熱された粒子を加
熱帯域環から反応帯域に導入するための手段を包含する
請求項1記載の改良された加熱流動床反応器。 7、加熱された粒子を反応帯域に導入するための手段が
反応帯域に向けたパルスガスジェットを包含する請求項
6記載の改良された加熱流動床反応器。 8、反応帯域が、流動床内の平均直径を有する流動粒子
に対して必要な最小流動速度の約2倍ないし8倍の範囲
にわたる流動ガス速度によつて特徴づけられる請求項1
記載の改良された加熱流動床反応器。 9、(a)シラン含有ガスのための下部入口、ケイ素生
成物粒子の取出しのための下部出口、ならびに未反応シ
ラン含有ガス及びシラン含有ガスの熱分解の気体副生物
の除去のための上部出口を包含する反応容器; (b)反応容器内に設置される周辺加熱帯域環を定める
手段であつて、ここに該周辺加熱帯域環は流動化開始状
態において側面的に閉じ込められたケイ素粒子を含有し
、該加熱帯域環は流動床からのケイ素粒子の導入のため
の上部入口及び加熱されたケイ素粒子を内部反応帯域中
に導入するための下部出口を包含し、加熱帯域環の下部
出口を通つて内部反応帯域に導入される加熱されたケイ
素粒子によつて熱が内部反応帯域に供給されるものであ
る前記手段; (c)周辺加熱帯域環によつて囲まれる内部反応帯域を
定める手段; (d)加熱帯域環に熱を供給するための加熱手段であつ
て、ここに加熱帯域環の粒子の温度はシラン含有ガスの
熱分解温度とケイ素粒子の融点温度との間の範囲にわた
るものである前記手段;を包含して成る、シラン含有ガ
スの熱分解による多結晶ケイ素の製造に使用される改良
された加熱流動床反応器。 10、周辺加熱帯域環を定める手段が内部反応帯域壁及
び外部加熱帯域壁を包含する請求項9記載の改良された
加熱流動床反応器。 11、加熱手段が周辺加熱帯域環を部分的に定める外部
加熱帯域壁に熱を供給する請求項10記載の改良された
加熱流動床反応器。 12、周辺加熱帯域環を部分的に定める外部加熱帯域壁
が石英ライナーを包含する請求項10記載の改良された
加熱流動床反応器。 13、周辺加熱帯域環を部分的に定める内部反応帯域壁
が内部反応帯域を定める請求項10記載の改良された加
熱流動床反応器。 14、周辺加熱帯域環の下部出口が、加熱されたケイ素
粒子を内部反応帯域に導入するための手段を包含する請
求項10記載の改良された加熱流動床反応器。 15、周辺加熱帯域環の高さが、ほぼケイ素粒子の一つ
の床の高さから内部流動床におけるケイ素粒子の約5床
の高さまでの範囲にわたる請求項10記載の改良された
加熱流動床反応器。 16、シラン含有ガスをシラン、ハロシラン、水素、及
びそれらの混合物より成る群から選択する請求項10記
載の改良された加熱流動床反応器。 17、加熱されたケイ素粒子を内部反応帯域に導入する
ための手段が内部反応帯域に向けられたパルスガスジェ
ットを包含する請求項14記載の改良された加熱流動床
反応器。 18、内部反応帯域壁の直径が約15cmないし約12
2cmの範囲にわたる請求項17記載の改良された加熱
流動床反応器。 19、周辺加熱帯域環を部分的に定める外部加熱帯域壁
の直径が約18cmないし約142cmの範囲にわたる
請求項17記載の改良された加熱流動床反応器。 20、(a)シラン含有ガスのための下部入口、ケイ素
生成物粒子の取り出しのための下部出口、ならびに未反
応シラン含有ガス及びシラン含有ガスの熱分解の気体副
生物を除去するための上部出口を包含する円筒状反応容
器; (b)直径約30cmを有し、円筒状反応容器内に同心
的に配置され、内部反応帯域を囲む内部反応帯域壁; (c)約41cmの直径を有し、内部反応帯域壁と外部
加熱帯域後との間に周辺加熱帯域環を形成する外部加熱
帯域壁であつて、ここに該加熱帯域環は流動化開始状態
において側面的に閉じ込められたケイ素粒子を含有し、
該加熱帯域環はケイ素粒子の導入のための上部入口、及
び加熱されたケイ素粒子を内部反応帯域に導入するため
の、パルスガスジェットを包含する、下部出口を包含し
、加熱帯域環の下部出口から内部反応帯域に導入される
加熱されたケイ素粒子は内部反応帯域に熱を供給するも
のである前記外部加熱帯域壁;及び(d)外部加熱帯域
を通して加熱帯域環に熱を供給する加熱手段であつて、
ここに加熱帯域環の粒子の温度は約550℃ないし約1
000℃の範囲にわたるものである前記手段; を包含して成る、シラン含有ガスの熱分解による多結晶
ケイ素の製造のための改良された加熱流動床反応器。 21、(a)反応容器内の内部反応帯域を囲む周辺加熱
帯域環に熱を供給し、ここに周辺加熱帯域環は流動床か
ら粒子を導入するための上部入口及び加熱された粒子を
内部反応帯域中に導入するための下部出口を包含し、加
熱帯域環に含有される粒子は流動化開始状態にあり、し
かも内部反応帯域壁及び外部加熱帯域壁により側面的に
閉じ込められており、外部加熱帯域壁に対して外部に配
置された加熱手段により、外部加熱帯域壁を通して周辺
加熱帯域環の粒子に熱が供給される工程、及び(b)加
熱された粒子を内部流動床反応帯域に導入する工程、 を包含して成る流動床反応帯域を加熱する方法。 22、周辺加熱帯域環の下部出口がパルスガスジェット
を包含し、該パルスガスジェットは加熱帯域環の加熱さ
れた粒子の内部反応帯域への導入を促進する役目をする
請求項21記載の方法。 23、内部反応帯域が、流動床における平均直径の粒子
を基準にして最小流動速度の約2ないし約8倍の範囲に
わたる流動ガス速度を包含する請求項21記載の方法。 24、流動床の粒子がシラン含有ガスをケイ素に熱分解
するのに有用なケイ素粒子である請求項21記載の方法
。 25、反応容器内に含まれる、加熱された内部流動床反
応帯域においてシラン含有ガスを熱分解することにより
高純度結晶ケイ素を製造する方法において、 (a)加熱されたケイ素粒子を周辺加熱帯域環から内部
反応帯域に導入することにより内部反応帯域に熱を供給
し、ここに該加熱されたケイ素粒子は周辺加熱帯域環に
おいて加熱され、該周辺加熱帯域環は、内部反応帯域を
定める内部反応帯域壁と外部加熱帯域壁との間の環状空
間を包含し、外部加熱帯域壁の外側に配置された加熱手
段により、周辺加熱帯域環におけるケイ素粒子に熱を供
給する、 ことを包含して成る前記方法の改良方法。 26、周辺加熱帯域環が、ケイ素粒子の導入のための上
部入口と下部出口とを更に包含し、該下部出口が加熱さ
れたケイ素粒子を内部反応帯域に導入するためのパルス
ガスジェットを包含する請求項25記載の方法。
Claims: 1. (a) a reaction vessel; (b) means located within the reaction vessel defining a peripheral heating zone ring surrounding an internal fluidized bed reaction zone, wherein the heating zone ring is The heating zone ring contains laterally confined particles from the fluidized bed in the fluidized starting state, the heating zone ring having an upper inlet for introducing the particles from the fluidized bed and introducing the heated particles into the inner reaction zone. (c) the heated particles of the heating zone ring entering the inner reaction zone through the lower outlet of the heating zone ring supplying heat to the inner reaction zone; An improved heated fluidized bed reactor comprising: means for defining an internal fluidized bed reaction zone; and (d) heating means for supplying heat to a heating zone ring. 2. The improved heated fluidized bed reactor of claim 1, wherein the means defining the peripheral heating zone ring includes an internal reaction zone wall and an external heating zone wall. 3. The improved heated fluidized bed reactor of claim 2, wherein the heating means supplies heat to an external heating zone wall that partially defines a peripheral heating zone ring. 4. The improved heated fluidized bed reactor of claim 2, wherein the external heating zone that partially defines the peripheral heating zone ring is a quartz liner. 5. The improved heated fluidized bed reactor of claim 2, wherein the means defining the internal fluidized bed reaction zone includes an internal reaction zone wall that partially defines the heating zone ring. 6. The improved heated fluidized bed reactor of claim 1, wherein the lower outlet of the peripheral heating zone ring includes means for introducing heated particles from the heating zone ring into the reaction zone. 7. The improved heated fluidized bed reactor of claim 6, wherein the means for introducing the heated particles into the reaction zone includes a pulsed gas jet directed into the reaction zone. 8. The reaction zone is characterized by a fluidized gas velocity ranging from about 2 times to 8 times the minimum fluidization velocity required for fluidized particles having an average diameter in the fluidized bed.
The improved heated fluidized bed reactor described. 9. (a) Lower inlet for silane-containing gas, lower outlet for removal of silicon product particles, and upper outlet for removal of unreacted silane-containing gas and gaseous by-products of the pyrolysis of the silane-containing gas. (b) means for defining a peripheral heating zone ring disposed within the reaction vessel, the peripheral heating zone ring containing laterally confined silicon particles in the fluidized starting state; the heating zone ring includes an upper inlet for the introduction of silicon particles from the fluidized bed and a lower outlet for introducing heated silicon particles into the internal reaction zone; (c) means defining an internal reaction zone surrounded by a peripheral heating zone ring; (d) heating means for supplying heat to a heating zone ring, wherein the temperature of the particles in the heating zone ring ranges between the pyrolysis temperature of the silane-containing gas and the melting point temperature of the silicon particles; An improved heated fluidized bed reactor for use in the production of polycrystalline silicon by pyrolysis of silane-containing gases, comprising certain of the aforementioned means. 10. The improved heated fluidized bed reactor of claim 9, wherein the means defining the peripheral heating zone ring includes an internal reaction zone wall and an external heating zone wall. 11. The improved heated fluidized bed reactor of claim 10, wherein the heating means supplies heat to an external heating zone wall that partially defines a peripheral heating zone ring. 12. The improved heated fluidized bed reactor of claim 10, wherein the external heating zone wall partially defining the peripheral heating zone ring includes a quartz liner. 13. The improved heated fluidized bed reactor of claim 10, wherein the internal reaction zone wall that partially defines the peripheral heating zone ring defines the internal reaction zone. 14. The improved heated fluidized bed reactor of claim 10, wherein the lower outlet of the peripheral heating zone ring includes means for introducing heated silicon particles into the internal reaction zone. 15. The improved heated fluidized bed reaction of claim 10, wherein the height of the peripheral heated zone ring ranges from approximately the height of one bed of silicon particles to the height of about 5 beds of silicon particles in the internal fluidized bed. vessel. 16. The improved heated fluidized bed reactor of claim 10, wherein the silane-containing gas is selected from the group consisting of silane, halosilane, hydrogen, and mixtures thereof. 17. The improved heated fluidized bed reactor of claim 14, wherein the means for introducing heated silicon particles into the internal reaction zone includes a pulsed gas jet directed into the internal reaction zone. 18. The inner reaction zone wall has a diameter of about 15 cm to about 12 cm.
18. The improved heated fluidized bed reactor of claim 17 over a range of 2 cm. 19. The improved heated fluidized bed reactor of claim 17, wherein the outer heating zone wall, which partially defines the peripheral heating zone ring, has a diameter ranging from about 18 cm to about 142 cm. 20, (a) a lower inlet for silane-containing gas, a lower outlet for removal of silicon product particles, and an upper outlet for removing unreacted silane-containing gas and gaseous by-products of the pyrolysis of the silane-containing gas; (b) an inner reaction zone wall having a diameter of about 30 cm and disposed concentrically within the cylindrical reaction vessel and surrounding the inner reaction zone; (c) having a diameter of about 41 cm. , an outer heating zone wall forming a peripheral heating zone ring between the inner reaction zone wall and the outer heating zone back, the heating zone ring containing laterally confined silicon particles in the fluidization starting state. Contains
The heating zone ring includes an upper inlet for the introduction of silicon particles and a lower outlet containing a pulsed gas jet for introducing the heated silicon particles into the internal reaction zone, the heating zone ring having a lower outlet. heated silicon particles introduced into the inner reaction zone from said outer heating zone wall supplying heat to the inner reaction zone; and (d) heating means for supplying heat to the heating zone ring through the outer heating zone. It's hot,
Here, the temperature of the particles in the heating zone ring is about 550°C to about 1
An improved heated fluidized bed reactor for the production of polycrystalline silicon by pyrolysis of a silane-containing gas, comprising: 21, (a) supplying heat to a peripheral heating zone ring surrounding the internal reaction zone in the reaction vessel, where the peripheral heating zone ring includes an upper inlet for introducing particles from the fluidized bed and a heating part for the internal reaction. The particles contained in the heating zone ring are in an initial fluidized state and are laterally confined by the inner reaction zone wall and the outer heating zone wall, and the external heating zone includes a lower outlet for introduction into the zone. heat is supplied to the particles of the peripheral heating zone ring through the external heating zone wall by heating means arranged externally to the zone wall; and (b) introducing the heated particles into the internal fluidized bed reaction zone. A method of heating a fluidized bed reaction zone comprising the steps of: 22. The method of claim 21, wherein the lower outlet of the peripheral heating zone ring includes a pulsed gas jet, the pulsed gas jet serving to facilitate introduction of the heated particles of the heating zone ring into the internal reaction zone. 23. The method of claim 21, wherein the internal reaction zone includes fluidized gas velocities ranging from about 2 to about 8 times the minimum fluidization velocity based on the average diameter particles in the fluidized bed. 24. The method of claim 21, wherein the particles of the fluidized bed are silicon particles useful for pyrolyzing silane-containing gases to silicon. 25. A method for producing high-purity crystalline silicon by pyrolyzing a silane-containing gas in a heated internal fluidized bed reaction zone contained in a reaction vessel, comprising: (a) heating silicon particles in a surrounding heating zone ring; supplying heat to the internal reaction zone by introducing heat into the internal reaction zone, wherein the heated silicon particles are heated in a peripheral heating zone ring, the peripheral heating zone ring defining the internal reaction zone. supplying heat to the silicon particles in the peripheral heating zone ring by means of a heating means arranged outside the external heating zone wall, comprising an annular space between the wall and the external heating zone wall. How to improve the method. 26. The peripheral heating zone ring further includes an upper inlet for the introduction of silicon particles and a lower outlet, the lower outlet containing a pulsed gas jet for introducing the heated silicon particles into the inner reaction zone. 26. The method according to claim 25.
JP8387689A 1988-03-31 1989-03-31 Circular heating fluidized bed reactor Pending JPH0221938A (en)

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