JPH02222831A - Oxygen sensor for prevention of poisoning from si - Google Patents

Oxygen sensor for prevention of poisoning from si

Info

Publication number
JPH02222831A
JPH02222831A JP1252025A JP25202589A JPH02222831A JP H02222831 A JPH02222831 A JP H02222831A JP 1252025 A JP1252025 A JP 1252025A JP 25202589 A JP25202589 A JP 25202589A JP H02222831 A JPH02222831 A JP H02222831A
Authority
JP
Japan
Prior art keywords
protective layer
sensor
component
exhaust gas
metal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1252025A
Other languages
Japanese (ja)
Other versions
JP2748031B2 (en
Inventor
Takao Kojima
孝夫 小島
Toshiki Sawada
澤田 俊樹
Masahiko Yamada
雅彦 山田
Hiroyuki Ishiguro
石黒 宏之
Masaru Yamanou
山農 勝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP1252025A priority Critical patent/JP2748031B2/en
Priority to DE68927087T priority patent/DE68927087T2/en
Priority to EP89120196A priority patent/EP0369238B1/en
Publication of JPH02222831A publication Critical patent/JPH02222831A/en
Priority to US08/408,132 priority patent/US5849165A/en
Priority to HK9997A priority patent/HK9997A/en
Application granted granted Critical
Publication of JP2748031B2 publication Critical patent/JP2748031B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To enable prevention of degrading in a falling response caused by poisoning from Si by arranging a protective layer with a component comprising elements in II (a) group of periodic table supported on the side exposed to an exhaust gas of a sensor element so that at least a part of the protective layer exists as non-stoichiometric compound with respect to heat resistant metal oxide. CONSTITUTION:A protective layer 5 comprising a non-stoichiometric compound 5a is provided to enable the maintaining a highly effective catalyst still after endured. Particles comprising a non-stoichiometric compound 5a have electron holes or the like and can prevent excessive CO and O2 in a rich or lean atmosphere from adsorbing on an electrode or the like and moreover, the particles are easy to conform to precious metal, thereby allowing the concentration of a control A/F in an early period and under an endurance near lambda 1. With a component 5b comprising elements in II (a) group of periodic table contained in the protective layer (including those having precious metal supported) 5, an Si component in an exhaust gas is allowed to react with Si being adsorbed on the protective layer 5 before it reaches an active point of a sensor.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は酸素センサ、特に自動車等の排気ガス浄化シス
テムの三元触媒と組合せて利用される空燃比制御用酸素
センサに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an oxygen sensor, and particularly to an oxygen sensor for air-fuel ratio control that is used in combination with a three-way catalyst in an exhaust gas purification system for automobiles and the like.

[従来技術及び課題] 酸素センサを取り巻く環境はかなりきびしい。[Prior art and issues] The environment surrounding oxygen sensors is quite harsh.

排気ガス規制が強化される中で特に0.4g/s+11
゜NOXの規制が既にカリフォルニアにて実施されてい
る。その為センサにとって初期での制御A/Pのバラツ
キをおさえることと耐久後でのA/F変動をおさえる事
は重要な必要条件となる。
Especially as exhaust gas regulations are tightened, 0.4g/s+11
NOx regulations are already in place in California. Therefore, it is an important requirement for the sensor to suppress variations in control A/P at the initial stage and to suppress A/F fluctuations after durability.

更に近年は、エンジン部品にシリコンを用いたものが多
く、このシリコンによる影響も無視できない状況である
Furthermore, in recent years, many engine parts use silicon, and the influence of silicon cannot be ignored.

従って9本発明は初期での制御A/Pバラツキを防止す
ると共に、耐久後のA/P変動を小さくシ。
Therefore, the present invention prevents control A/P fluctuations at the initial stage and reduces A/P fluctuations after durability.

かつSi被毒によるリーンシフト、立下り応答性の劣化
を防止することにある。
Another purpose is to prevent lean shift and fall responsiveness from deteriorating due to Si poisoning.

[課題を解決するための手段] 初期での制御A/Fバラツキ、そして耐久後での変動を
抑える為には酸素センサの排ガス側保護層に貴金属を含
有させセンサ電極にガスが到着する迄に、完全に未燃成
分の燃焼反応を進めてしまうという対策が各種付なわれ
ている。その中で我々も非化学量論的化合物からなる保
護層(第2保護層)を設ける事により耐久後も非常に効
果の強い触媒を保持できることを見出した(特願昭82
−211278)。これは非化学量論的化合物例えばT
iO2−1(x≦0.4)からなる粒子は電子ホール等
を有したものでリッチ・リーン雰囲気での過剰なcOl
及びo2が電極等に吸着する事を防ぐ上、貴金属とのな
じみも良い事がら初期、耐久での制御A/Fをλ′、1
近傍に集中させる事ができる様になった。この層での貴
金属は非化学量論的化合物に対して2■of%以下が好
ましくこれよりも多くなると次第にエミッションがリッ
チ側になりCO等が排出される様になってしまう。この
様な素子によりセンサの制御A/Fは初期のみならず耐
久後もバラツキ変動が少ないものとなる。しかし、Si
成分が排ガス中に含まれた場合には従来の酸素センサ素
子に比べ効果が見られるが、かなりリーン側にシフトし
てしまった。
[Means for solving the problem] In order to suppress control A/F variations at the initial stage and fluctuations after durability, the protective layer on the exhaust gas side of the oxygen sensor should contain precious metals before the gas reaches the sensor electrode. Various measures have been taken to completely advance the combustion reaction of unburned components. Among these, we also discovered that by providing a protective layer (second protective layer) made of a non-stoichiometric compound, a highly effective catalyst could be retained even after durability (Patent application No. 82
-211278). This is true for non-stoichiometric compounds such as T
Particles consisting of iO2-1 (x≦0.4) have electron holes, etc., and are caused by excess cOl in a rich/lean atmosphere.
In addition to preventing o2 from adsorbing to electrodes, etc., and also being compatible with precious metals, the control A/F during initial and durability periods is set to λ', 1.
It is now possible to concentrate in nearby areas. Preferably, the amount of noble metal in this layer is less than 2 % of the non-stoichiometric compound, and if the amount is more than this, the emission will gradually become rich and CO etc. will be emitted. With such an element, the control A/F of the sensor has less variation not only in the initial stage but also after durability. However, Si
When the component is included in exhaust gas, it is more effective than conventional oxygen sensor elements, but it has shifted considerably to the lean side.

その為1本発明にあっては、この保護層(貴金属を担持
したものも含む)中に周期率表IIa族元素からなる成
分(以下+  r n a族成分」という)を含有させ
る事により、排気ガス中のSi成分がセンサの活性点に
達する迄に、この保護層にSiを吸着反応させることが
できる様にしたものである。
Therefore, in the present invention, by incorporating a component consisting of a group IIa element of the periodic table (hereinafter referred to as +rna group component) into this protective layer (including one carrying a noble metal), This protective layer is designed to adsorb and react with Si until the Si component in the exhaust gas reaches the active site of the sensor.

これは、保護層中のIIa族酸成分にCa、Mg等は排
ガス中に含まれるStとセンサが使用される状態下の温
度で反応を起こし低融点の結晶を生成する為、この保護
層より内側に位置し、耐熱性金属酸化物からなりIIa
族成分を含有しない保護層(第1保護層)(特にスピネ
ル、A1z03からなるもの)イこSiが侵入してこな
くなり第1保護層中に在る貴金属及び電極を保護するも
のと推定される。特にCa又はMgを含んだ塩化物、炭
酸塩は非常に細かい粒子が形成される為このSi成分が
累通りしてしまう事を防ぐ事ができる一J−に、このS
iに対して活性が高い。
This is because the Group IIa acid components in the protective layer, such as Ca and Mg, react with St contained in the exhaust gas at the temperature under which the sensor is used, producing crystals with a low melting point. Located on the inside and made of heat-resistant metal oxide IIa
It is presumed that a protective layer (first protective layer) that does not contain a group component (particularly one made of spinel, A1z03) prevents Si from penetrating and protects the noble metal and electrode present in the first protective layer. In particular, chlorides and carbonates containing Ca or Mg form very fine particles, so this S
Highly active against i.

しかしながら排ガス中に含まれるシリコンがエンジンの
低回転つまり温度が低い時に混入した場合にはIIa族
酸成分特にCa、Mg化合物)によるSlの吸着効果は
弱まり未反応のまま保護層にStが侵入してしまう事が
あった。そのためにセンサが高温にさらされた時その8
1がSiO□等に変化し保護層に目詰まりを生じてしま
う事も起こった。
However, if silicon contained in the exhaust gas is mixed in when the engine is running at low speeds, i.e., when the temperature is low, the adsorption effect of Sl by Group IIa acid components (especially Ca and Mg compounds) weakens, and St enters the protective layer without reacting. There was something that happened. Part 8: When the sensor is exposed to high temperatures
In some cases, 1 changed to SiO□, etc., resulting in clogging of the protective layer.

そのため1本発明にあっては更に、排気ガスにさらされ
る側の保護層に■a族成分を含有させると共に、センサ
素子を加熱するヒータを備える事により、このSLの侵
入を防ぐ事ができたものである。つまり保護層温度をこ
のヒータにより高め、■a族酸成分吸着能力を高める事
によりSLはこのIIa族酸成分反応しStのみでの侵
入を少なくさせる事ができる為である。
Therefore, in the present invention, the intrusion of this SL can be prevented by further including a group A component in the protective layer on the side exposed to exhaust gas and by providing a heater that heats the sensor element. It is something. In other words, by raising the temperature of the protective layer using this heater and increasing the ability to adsorb the group IIa acid component, SL can react with the group IIa acid component, thereby reducing the intrusion of only St.

IIa族酸成分含む保護層(第2保護層)について、■
aa元素としてはCa、Mgが良好である。IIa族酸
成分組成としては非酸化物2例えばCaCJ2 、Mg
CO3等の塩化物、炭酸塩。
Regarding the protective layer (second protective layer) containing a Group IIa acid component, ■
Ca and Mg are suitable as aa elements. Group IIa acid component composition includes non-oxide 2 such as CaCJ2, Mg
Chlorides and carbonates such as CO3.

硝酸塩が良い。但し、ヒータを備えた酸素センサにあっ
ては酸化物であっても有効である。又これらの水和物例
えばCa Ci2  ・2H20゜複合化合物例えばC
aCO3・MgCO3(ドロマイト)であってもよい。
Nitrates are good. However, in the case of an oxygen sensor equipped with a heater, even oxides are effective. In addition, hydrates of these, such as Ca Ci2 .2H20° complex compounds, such as C
It may also be aCO3.MgCO3 (dolomite).

IIa族成分成分Aで204.チタニア等の耐熱性金属
酸化物に担持させるとよい。特に非化学量論的化合物と
して例えばTiO2−1(x≦0.4) 、  L a
203−Xに高分散担持させることが好ましい。
Group IIa component component A with 204. It is preferable to support it on a heat-resistant metal oxide such as titania. In particular, non-stoichiometric compounds such as TiO2-1 (x≦0.4), La
203-X is preferably supported in a highly dispersed manner.

その製造法としては1例えば予めチタニア粒子(例えば
平均粒径0.1〜1μs)にIIa族酸成分担持させ、
スラリとして第1保護層上に塗布させ熱処理(例えば5
00〜700”C)する方法;チタニア粒子を第1保護
層に塗布した後、これをIIa族成分溶岐に減圧又は加
圧上浸漬させた後、熱処理する方法が挙げられる。これ
らの場合、第2保護層の耐熱金属酸化物に対してIIa
族成分成分合を。
As for the manufacturing method, 1, for example, titania particles (for example, average particle size 0.1 to 1 μs) are preliminarily supported with a group IIa acid component,
It is applied as a slurry onto the first protective layer and subjected to heat treatment (for example, 5
00 to 700"C); after applying titania particles to the first protective layer, the titania particles are immersed in a group IIa component molten under reduced pressure or under pressure, and then heat treated. In these cases, IIa for the refractory metal oxide of the second protective layer
Family component composition.

IIa族元素換算で30vt%以下、より好ましくは2
0vt%以下にするとよい。30wt%を越えると次第
にセンサの応答性が悪くなる。つまり目詰りが生じ始め
るからである。
30vt% or less in terms of group IIa elements, more preferably 2
It is preferable to set it to 0vt% or less. If it exceeds 30 wt%, the responsiveness of the sensor gradually deteriorates. In other words, clogging begins to occur.

電極或いは触媒としての貴金属の耐久劣化を防ぐために
は、耐熱性金属酸化物の少なくとも一部が2非化学量論
的化合物例えばTiO□−8として存在することが必要
である。但し、全て非化学ご論的化合物である必要はな
く、化学量論的化合物(例えばTiO2,Aで204.
スピネル)と共にIIa族成分成分散担持させることも
できる。この場合、非化学量論的化合物と化学量論的化
合物との存在割合は3:2以上、より好ましくは2:1
以上にするとよい。
In order to prevent durable deterioration of noble metals used as electrodes or catalysts, it is necessary that at least a portion of the refractory metal oxide be present as a di-nonstoichiometric compound, such as TiO□-8. However, it is not necessary that all the compounds are non-stoichiometric compounds, but stoichiometric compounds (for example, TiO2, A with 204.
It is also possible to carry a compositional dispersion of Group IIa components together with spinel. In this case, the ratio of the non-stoichiometric compound to the stoichiometric compound is 3:2 or more, preferably 2:1.
It is better to make it more than that.

又、jl金属好ましくはPtを、非化学量論的化合物に
対して2 mo1%以下(但し、濃い(リッチ)排ガス
条件ではl 、 5moffi%以下)の量で含有させ
ることにより初期での制御A/Pのバラツキを更におさ
えることができる。この場合、第2保護層はIIa族成
分成分金属とを同一部に存在させてもよ。
In addition, initial control A can be achieved by containing jl metal, preferably Pt, in an amount of 2 mo1% or less (however, l,5 moffi% or less under rich exhaust gas conditions) relative to the non-stoichiometric compound. The variation in /P can be further suppressed. In this case, the second protective layer and the group IIa component metal may be present in the same part.

いが、貴金属を担持してなる部分(第1保護部)と■a
族成分を担持してなる部分(第2保護部)とをもって構
成させてもよい。しかし、その場合には特に第2保護部
をより外側に配置させる必要がある。この第1.第2保
護部を構成する耐熱性金属酸化物については、いずれも
非化学量論的化合物であることが好ましい。第1保護部
については、非化学量論的化合物が60%以上あること
が必要である。又、IIa族成分成分護層を構成する耐
熱性金属酸化物とは独立して存在することが好ましい。
However, the part supporting the precious metal (first protective part) and ■a
It may also be configured with a part (second protective part) supporting a group component. However, in that case, it is particularly necessary to arrange the second protection part further outside. This first. It is preferable that all the heat-resistant metal oxides constituting the second protective part be non-stoichiometric compounds. For the first protective part, it is necessary that the non-stoichiometric compound is present at least 60%. Further, it is preferable that the group IIa component exists independently of the heat-resistant metal oxide constituting the protective layer.

「独立して」とはIIa族酸成分これら金属酸化物と反
応して例えばM g T l OsのようなSt酸成分
対して不活性な化合物を形成していないことをいう。
"Independently" means that the Group IIa acid component does not react with these metal oxides to form a compound, such as MgTlOs, that is inert to the St acid component.

又、前記第2保護層よりも内側において電極を直接被覆
して位置し、 ■a族酸成分含有しない保護層(第1保
護層)を備えるとよい。第1保護層についても耐熱性金
属酸化物からなり、特にスピネル<Mg0−Aで20.
> 、アルミナが好ましく、溶射にて強固に付着させた
ものが良い。
Further, it is preferable to provide a protective layer (first protective layer) which is located inside the second protective layer and directly covers the electrode, and which does not contain a group a acid component. The first protective layer is also made of a heat-resistant metal oxide, especially when spinel<Mg0-A is 20.
> Preferably, alumina is used, and one that is firmly attached by thermal spraying is preferable.

この第1保護層中に、貴金属例えばptおよび/または
Rh、Pdの含有を行なう事は、排ガス中の未燃成分の
酸化、還元を完全に行ない、センサにとって良好な制御
A/Fを示す事になる。なお第2保護層の外側に例えば
チタニア、アルミナ。
Inclusion of noble metals such as pt and/or Rh and Pd in this first protective layer completely oxidizes and reduces unburned components in the exhaust gas and provides good control A/F for the sensor. become. Note that the outer side of the second protective layer is made of, for example, titania or alumina.

スピネル等からなる第3保護層を更に備えてもよい。It may further include a third protective layer made of spinel or the like.

尚、各保護層はセンサ応答性を劣化しない程度の通気性
を必要とすることは勿論である。そのため、第1保護層
については例・えば気孔率10〜30%、厚み10〜5
0−1第2保護層については例えば気孔率8〜35%、
厚み10〜50μmにするとよい。
It goes without saying that each protective layer needs to have air permeability to the extent that it does not deteriorate sensor response. Therefore, for the first protective layer, for example, the porosity is 10-30% and the thickness is 10-5%.
For example, for the 0-1 second protective layer, the porosity is 8 to 35%,
The thickness is preferably 10 to 50 μm.

又、センサ素子本体例えばジルコニア固体電解質の測定
電極側表面は凸凹10u1m以上をHした構造にすると
よい。保護層の剥離を防上して、耐久性に優れる。
Further, it is preferable that the surface of the sensor element main body, for example, the zirconia solid electrolyte, on the measurement electrode side has a structure in which the unevenness is 10 μm or more. Prevents the protective layer from peeling off and has excellent durability.

センサ素子の本体材料としては、ZrO2固体電解質の
他、TiO2,CoO半導体等であってもよい。非化学
量論的化合物としてチタニアの外、酸化ランタンであっ
てもよい。又ヒータの種類、材質(例えばセラミック)
、取付位置等は。
In addition to ZrO2 solid electrolyte, the main body material of the sensor element may be TiO2, CoO semiconductor, or the like. In addition to titania, lanthanum oxide may be used as the non-stoichiometric compound. Also, the type and material of the heater (e.g. ceramic)
, mounting position etc.

上記作用を発揮できる限り2問わない。2 does not matter as long as it can exhibit the above effect.

[実施例] 実施例A(第1表、試料魔1〜14) l、下記工程1〜9によってセンサ素子本体(電極、第
1保護層を備えたもの)を製作する。
[Example] Example A (Table 1, Samples 1 to 14) 1. A sensor element body (equipped with an electrode and a first protective layer) is manufactured by the following steps 1 to 9.

工程1: 純度99%以上のZrO2に純度99%のY2O3を5
 s+of%添加し、湿式混合した後、 1300℃で
2時間仮焼する。
Step 1: Add 5% of Y2O3 with a purity of 99% to ZrO2 with a purity of 99% or more.
After adding s+of% and wet mixing, it is calcined at 1300°C for 2 hours.

工程2: 水を加えボールミル中にて湿式にて粒子の80%が2.
5μm以下の粒径になるまで粉砕する。
Step 2: Add water and wet process in a ball mill until 80% of the particles are 2.
Grind to a particle size of 5 μm or less.

工程3: 水溶性バインダを添加し、スプレードライにて平均粒径
70趨の球状の造粒粒子を得る。
Step 3: Add a water-soluble binder and spray dry to obtain spherical granulated particles with an average particle diameter of 70.

工程4: 工程3にて得た粉末をラバープレスし所望の管状(U字
管状)に成形し乾燥後、砥石にて所定の形状に研削する
Step 4: The powder obtained in Step 3 is rubber pressed to form a desired tubular shape (U-shaped tubular shape), dried, and then ground into a predetermined shape using a grindstone.

工程5: 外面上に、工程3で得た造粒粒子に水溶性バインダ繊維
素グリコール酸ナトリウム及び溶剤を添加した泥漿を付
着させる。
Step 5: A slurry prepared by adding a water-soluble binder cellulose sodium glycolate and a solvent to the granulated particles obtained in Step 3 is attached to the outer surface.

工程6: 乾燥後、 1500℃X 211rsにて焼成する。検
出部に対応する部分について、軸方向長25關、外径約
5履膳φ、内径約3111φとした。
Step 6: After drying, bake at 1500°C x 211rs. The portion corresponding to the detection portion had an axial length of 25 mm, an outer diameter of approximately 5 mm, and an inner diameter of approximately 3111 mm.

工程7: 無電解メツキにより、外面にpt測定電極層を厚さ0.
9aに折着させ、その後1000℃で焼付する。
Step 7: A PT measurement electrode layer is formed on the outer surface by electroless plating to a thickness of 0.
9a, and then baked at 1000°C.

工程8: MgOφAJ203 (スピネル)の粉末にてプラズマ
溶射して厚さ約100μ糟の電極を直接被覆する第1保
護層を形成する。
Step 8: A first protective layer that directly covers the electrode with a thickness of about 100 μm is formed by plasma spraying MgOφAJ203 (spinel) powder.

工程9: 工程7と同様にして、内面にpt基準電極層を形成した
Step 9: In the same manner as Step 7, a PT reference electrode layer was formed on the inner surface.

2、 P t 0.051:/でのH2PtCfle溶
液に素子のスピネル溶射部を入れ真空引きし、第1保護
層中に貴金属(pHを担持させた。その担持量は第1保
護層の金属酸化物に対して約0.02〜0,05vt%
である。
2. The spinel sprayed part of the device was placed in a H2PtCfle solution with Pt of 0.051:/ and evacuated, and the noble metal (pH) was supported in the first protective layer. Approximately 0.02-0.05vt% of the material
It is.

3、平均粒径0.2μm程度のTiO2−1粉末にCa
CJ2  ・2H20(純水にて溶かしたもの)等のI
Ia族成分成分え、煮騰撹拌しながら乾燥しその後55
0℃にて熱処理した。試料N11l、 12はα−Ai
’zC)+ も配合した。尚、’rio2−.粉末は。
3. Adding Ca to TiO2-1 powder with an average particle size of about 0.2 μm
I such as CJ2 and 2H20 (dissolved in pure water)
Add the group Ia ingredients, boil and dry while stirring, then boil for 55 minutes.
Heat treatment was performed at 0°C. Samples N11l and 12 are α-Ai
'zC)+ was also blended. Furthermore, 'rio2-. The powder.

T【02粒子を予め非酸化性雰囲気800℃以上で処理
することによって得た。TiO2に対して0.01mo
ffi%程度の貴金属を含有させても、非化学量論的化
合物にすることができる。チタニア粉末に貴金属を担持
させるときは、予め所望の貴金属含有塩溶液中にチタニ
ア粒子を入れ煮沸乾燥し、その後大気中550℃にて熱
処理させた。
It was obtained by previously treating T02 particles in a non-oxidizing atmosphere at 800° C. or higher. 0.01 mo for TiO2
Even if it contains about ffi% of noble metal, it can be made into a non-stoichiometric compound. When titania powder was to support a noble metal, titania particles were placed in a desired noble metal-containing salt solution in advance, boiled and dried, and then heat-treated at 550° C. in the atmosphere.

4.2で得た素子に、3で得た粉末に有機バインダとブ
チルカルピトールを加え、hJにて塗布2焼付した。焼
付は500℃の還元雰囲気で行なった。
4. To the element obtained in step 2, an organic binder and butyl calpitol were added to the powder obtained in step 3, and the mixture was coated with hJ and baked. Baking was performed in a reducing atmosphere at 500°C.

5、公知のセンサ組付を行った。5. A known sensor assembly was performed.

実施例B(第2表、試料Na15〜27)【、2.前記
Aの1.2と同じ 3.1で得た素子に2平均粒径0.2M程度のT102
−X粉末に有機バインダとブチルカルピトールを加え、
筆にて塗布、乾燥した。乾燥は120’C大気中にて行
った。
Example B (Table 2, Samples Na15-27) [,2. T102 with an average grain size of about 0.2M was added to the element obtained in 3.1, which is the same as 1.2 in A above.
-Add organic binder and butyl calpitol to X powder,
It was applied with a brush and dried. Drying was carried out at 120'C in air.

4、CaCJ2 ・2H20を水にて溶がし、3で得た
素子の塗布部を入れ、真空引きした。その際、Ca濃度
を各種変更させた。その後、  100’C大気中にて
乾燥を行った。
4. CaCJ2.2H20 was dissolved in water, the coated part of the element obtained in 3 was put in, and the mixture was evacuated. At that time, the Ca concentration was variously changed. Thereafter, it was dried in the atmosphere at 100'C.

実施例C(第3表、試料28〜35) (a)センサ素子の製造 前記実施例A又はBと同じ。Example C (Table 3, Samples 28-35) (a) Manufacture of sensor element Same as Example A or B above.

(b)ヒータの製造等 1、Al1203を主成分とするシートを厚み0.81
にドクターブレード法にて成形した。
(b) Manufacture of heater, etc. 1, sheet mainly composed of Al1203 with a thickness of 0.81
It was molded using the doctor blade method.

2、スクリーン印刷法によりWを主成分とし有機バイン
ダと溶剤を加えたペーストにて、導電性パターンを印刷
した。
2. A conductive pattern was printed using a paste containing W as the main component and an organic binder and a solvent by screen printing.

3、更にAで。03を主成分とし有機バインダと溶剤を
加えたペーストにて厚30μ譜コーティングした。
3.More A. It was coated with a thickness of 30 μm using a paste containing 03 as the main component and an organic binder and a solvent added thereto.

4、 A Rz Osを主成分とする外径2關の碍管に
3で得たシートを巻きつけ400℃にて24 II r
を樹脂抜きし、 1550℃X2Hrsにて焼成した。
4. Wrap the sheet obtained in step 3 around an insulator tube with two outer diameters containing A RzOs as the main component and heat it at 400°C for 24 hours.
The resin was removed and baked at 1550°C for 2 hours.

5、端子部にリード線を銀ロー付けしてヒータを得た。5. Lead wires were soldered with silver to the terminals to obtain a heater.

G、素子を組付ける時に袋状素子の内側に接触しないよ
うに1〜5で得たヒータを挿入した。
G. When assembling the element, the heater obtained in steps 1 to 5 was inserted so as not to contact the inside of the bag-shaped element.

実施例D(第3表、試料37〜39) 1、Z r02 +Y2035モル%を主成分とするシ
ートを厚み 0 、8 amにドクターブレード法にて
成形した。
Example D (Table 3, Samples 37 to 39) 1. A sheet containing 35 mol % of Z r02 +Y2 as a main component was molded to a thickness of 0.8 am by a doctor blade method.

2、スクリーン印刷法によりpiを主成分とし。2. Using pi as the main component by screen printing method.

有機バインダと溶剤を加えたペーストにて電極を2〇−
厚両面に印刷した。
Electrodes are made with a paste containing an organic binder and a solvent.
Printed on both sides.

3、該電極を被覆する様にAl1203を主成分とし、
有機バインダと溶剤とを加え更に多孔質にする為デンプ
ン等を少量加えたペーストにて厚み30μIコーテイン
グした。
3. The main component is Al1203 so as to cover the electrode,
A paste containing an organic binder and a solvent and a small amount of starch to make it porous was coated to a thickness of 30 μI.

4.1と同様のシート上にA象z O3を主成分とし有
機バインダと溶剤とを加えたペーストを厚み30μmに
両面にコーティングした。
On both sides of the same sheet as in 4.1, a paste containing Azoz O3 as a main component and an organic binder and a solvent was coated to a thickness of 30 μm.

5.2と同様のペーストにて20μ謡ヒータパターンを
印刷した。
A 20 μm heater pattern was printed using the same paste as in 5.2.

6、更に4を繰り返した(ただしヒータパターン上の面
のみ)。
Steps 6 and 4 were repeated (however, only on the surface above the heater pattern).

7.1と同様のシートをコの字状に切断しスペーサ用シ
ートを1〜3で得た電極印刷シートと4〜6で得たヒー
タパターン内在シートとの間に配置して熱圧着した。
A sheet similar to 7.1 was cut into a U-shape, and a spacer sheet was placed between the electrode printed sheet obtained in steps 1 to 3 and the heater pattern embedded sheet obtained in steps 4 to 6, and bonded by thermocompression.

8、 400℃24H「樹脂抜きした後1500℃X4
1(rの焼成を行なった。
8. 400℃ 24H "1500℃ x 4 after removing resin
1 (r firing was performed.

9、チタニア及び■a族成分担持保護層を形成した。こ
の第2保護層については、試料Na37は実施例Aの試
料胤3におけるもの、又試料Nα38.39は実施例B
の試料Nα17.1gにおけるものと同様にした。
9. A protective layer supporting titania and a group a component was formed. Regarding this second protective layer, sample Na37 is in sample seed 3 of Example A, and sample Nα38.39 is in Example B.
The same procedure was used for sample Nα17.1g.

実施例E(第4表、試料Nα40〜55.80.81)
1、前記実施例Aの1(工程1〜9)と同じ。
Example E (Table 4, samples Nα40-55.80.81)
1. Same as 1 (Steps 1 to 9) of Example A above.

試料Nα45〜48につい、では、前記実施例Aの2と
同様にして第1保護層中に貴金属を含浸させた。
Regarding samples Nα45 to Nα48, the first protective layer was impregnated with a noble metal in the same manner as in Example A-2.

2、TiO2粉末(平均粒径0.3μm)をP t O
,05g/l〜1f/でのH2PtCJ2.溶液及び/
又はRh 0.05g / i!のRhC1’3 #x
)120溶液に浸し、50〜10口輸膳11gの圧力下
で約5分放置して。
2. TiO2 powder (average particle size 0.3 μm) was converted into P t O
,05g/l~1f/H2PtCJ2. solution and/or
Or Rh 0.05g/i! RhC1'3 #x
) 120 solution and leave it for about 5 minutes under the pressure of 11g of 50-10 servings.

TiO2に対してpt又はRhが1 mof%相当にな
るように含浸させた。次に、乾燥した後、600℃大気
中にて処理して、熱処理を行ない、更に有機バインダと
溶剤にてペーストとした。
It was impregnated with pt or Rh in an amount equivalent to 1 mof% with respect to TiO2. Next, after drying, it was heat-treated at 600° C. in the atmosphere, and then made into a paste with an organic binder and a solvent.

3、このペーストを第1保護層に塗布し、  120℃
にて乾燥した(第1保護部、208℃厚)。
3. Apply this paste to the first protective layer and heat at 120℃
(first protected part, 208° C. thickness).

4、チタニア粉末をCa Cj:2  ・2H20など
の溶液中に入れ、煮沸しながら乾燥した。その後水溶性
バインダと水にてペーストとした。TiO2に対して、
■a族金属換算で20vt%とじた。
4. Titania powder was placed in a solution such as Ca Cj:2 .2H20 and dried while boiling. Thereafter, it was made into a paste using a water-soluble binder and water. For TiO2,
(2) 20vt% in terms of group a metals.

5、このペーストを第1保護部上に塗布し、600℃に
て焼付けた(第2保護部、20n厚)。
5. This paste was applied on the first protective part and baked at 600°C (second protective part, 20n thick).

B、第2保護層(第1.第2保護部からなる)上に適宜
第3保護層を形成した。その他、第4表に示すように各
種の多層構造からなる試料を作成した。
B. A third protective layer was appropriately formed on the second protective layer (consisting of the first and second protective parts). In addition, samples with various multilayer structures were prepared as shown in Table 4.

7、公知のセンサ組付を行った。7. A known sensor assembly was performed.

実施例F(第4表、試#j No、 5 G〜59)1
、前記実施例りの1〜8と同じ。但し阻58゜59につ
いては、実施例A−2と同様にしてA R203からな
る保護層に貴金属を含有させた。
Example F (Table 4, Trial #j No, 5 G~59) 1
, the same as 1 to 8 of the above embodiment. However, regarding the resistance 58°59, a noble metal was contained in the protective layer made of AR203 in the same manner as in Example A-2.

2、実施例Eの3と同様なペーストを塗布、600℃大
気中にて焼付けて第1保護部を形成した(20μm)。
2. A paste similar to 3 of Example E was applied and baked at 600° C. in the atmosphere to form a first protective portion (20 μm).

3、実施例Eの5と同様なペーストを塗布、800℃大
気中にて焼付けて第2保護部を形成した(20−)。
3. A paste similar to 5 of Example E was applied and baked at 800° C. in the atmosphere to form a second protective portion (20-).

4.こうして得られた素子の両側に、一対の支持体をガ
ラスシールによって取付けた。
4. A pair of supports were attached to both sides of the element thus obtained using glass seals.

5、公知のセンサ組付を行なった。5. A known sensor assembly was performed.

本発明は上記実施例に限定されるものではなく1種々の
タイプの空燃比制御用酸素センサ、例えばポンプ等を併
設してなる全域空燃比制御用センサ(第7図)、又Ti
O2,Coo等の金属酸化物半導体を利用したセンサ(
第8図)にも適用群できる。半導体型センサの場合2例
えば半導体である金属酸化物中に貴金属を含有させ、ス
ピネル等の溶射層を備え、IIa族成分成分有する第2
保護層を備えてもよい。
The present invention is not limited to the above-mentioned embodiments, but can be applied to various types of air-fuel ratio control oxygen sensors, such as a wide range air-fuel ratio control sensor equipped with a pump etc. (FIG. 7), or a Ti
Sensors using metal oxide semiconductors such as O2 and Coo (
(Fig. 8) can also be applied. In the case of a semiconductor type sensor 2 For example, a second sensor containing a precious metal in a metal oxide which is a semiconductor, a sprayed layer of spinel or the like, and a second sensor having a group IIa component.
A protective layer may also be provided.

尚、第1〜8図は本発明に係る酸素センサの例を示した
もので、各図において、1はセンサ素子本体、2は基準
電極、3は測定電極、4は第1保護層、5は第2保護層
、5aは耐熱性金属酸化物(特に非化学量論的化合物)
、5bはIIa族成分成分はヒータを夫々表わす。
1 to 8 show examples of the oxygen sensor according to the present invention, and in each figure, 1 is the sensor element body, 2 is the reference electrode, 3 is the measurement electrode, 4 is the first protective layer, and 5 is the oxygen sensor according to the present invention. is the second protective layer, 5a is a heat-resistant metal oxide (especially a non-stoichiometric compound)
, 5b represent the IIa group components, respectively.

[試験] 各試料について1次のような試験を行なった。[test] The following tests were conducted on each sample.

■、実車にてセンサ初期の制gJA/Pを測定した。(2) The initial gJA/P of the sensor was measured on an actual vehicle.

測定方法はマニホールドにセンサを取付け、 80kj
/!Ir X 8 psの走行状態に固定した時のセン
サによる制御を行い、その排ガスを空燃比針にて^/F
を計測した。
The measurement method is to attach a sensor to the manifold and measure 80kj.
/! Control is performed using a sensor when the running condition is fixed at Ir
was measured.

2、排気管(マニホールド−1mm上下流にセンサを取
付け、更にマニホールド部から81オイルを5 cc/
 30分の割合で111r(10cc)を注入しながら
3000rl)s  (但しヒータ付についてはNa2
8〜39を除き1000rp謹)にてエンジンを動かし
た[Siテスト〕。雰囲気はλζ1近傍にて行なった。
2. Install a sensor upstream and downstream of the exhaust pipe (manifold - 1mm, and then add 5 cc/81 oil from the manifold part.
3000rl)s while injecting 111r (10cc) at a rate of 30 minutes (However, for models with a heater, Na2
The engine was operated at 1000 rpm (except for 8 to 39) [Si test]. The atmosphere was near λζ1.

3.1の測定を行い、初期と耐久後のA/Pの変化(Δ
^/P )を求めた。又センサの応答性として高速応答
レコーダにてセンサ出力をモニタした(例えば第10図
)。そして、第11図に示すように平均値な直線を結び
300.80hV間の時間(TLil。
3.1 was measured, and the change in A/P (Δ
^/P) was calculated. In addition, the sensor output was monitored using a high-speed response recorder to measure the responsiveness of the sensor (for example, Fig. 10). Then, as shown in FIG. 11, the average value is connected with a straight line and the time between 300.80 hV (TLil) is drawn.

TML)を、Siテスト後に計測した。TML) was measured after the Si test.

4、又、試料隘28〜39については、Siオイル注入
時の1?/C回転11000rp及び3000rpmに
おいて。
4. Also, regarding sample holes 28 to 39, 1 when injecting Si oil? /C rotation at 11000 rpm and 3000 rpm.

ヒータを通電させ(試料N1135は除く)、センサの
制御状態を観察した。
The heater was energized (except for sample N1135), and the control state of the sensor was observed.

5、又、実車エンジンl: テλw 1 、 850℃
(30分)0アイドル(30分) 1o0011rsの
熱サイクルテストを行ない、制御A/Fを測定した。
5. Also, actual vehicle engine l: Te λw 1, 850°C
(30 minutes) 0 idle (30 minutes) A thermal cycle test of 1o0011rs was conducted and the control A/F was measured.

これらの結果を第1〜4表及び第12.13図に示す。These results are shown in Tables 1-4 and Figure 12.13.

(以下余白) 第 表 1) E/G回転3000rpmのとき(ヒータ通電な
し)、約550℃ る。
(Left below) Table 1) When the E/G rotation is 3000 rpm (heater is not energized), the temperature is approximately 550°C.

又EIG回転11000rpのとき。Also when the EIG rotation is 11000 rpm.

(ヒータ通電なし)、約400℃ る。(heater not energized), approximately 400℃ Ru.

センサ温度は約400℃ (ヒータ通電あり)であ センサ温度は約300℃ (ヒータ通電あり)であ 2)試料Na37〜39については実施例りの1〜8に
より素子本体及び第1保護層を形成し、その後表中0内
に示した素子隠と同様な第2保護層を形成した。
The sensor temperature is approximately 400°C (heater energized) and the sensor temperature is approximately 300°C (heater energized). After that, a second protective layer similar to the element cover shown in 0 in the table was formed.

第1表〜第4表から明らかなように2本発明範囲外であ
る比較試料はSiテストにおいて、^/P変動が大きく
 (Δ^/[’≧0.08) 、立下り応答性も遅くな
る(TRL≧ 120m5)。又、熱サイクルテストに
おいても、 A/F変動が大きい(ΔA/I’ −0,
04)。
As is clear from Tables 1 to 4, the two comparative samples outside the scope of the present invention had large ^/P fluctuations (Δ^/['≧0.08) and slow fall response in the Si test. (TRL≧120m5). Also, in thermal cycle tests, A/F fluctuations are large (ΔA/I' -0,
04).

これに対して、各実施例試料はS1テストにおいて、 
A/F変動が顕著に抑制され(Δ^/P≦0.04) 
、応答性も高水準に維持される(TRL≦90aS)。
On the other hand, in the S1 test, each example sample
A/F fluctuation is significantly suppressed (Δ^/P≦0.04)
, responsiveness is also maintained at a high level (TRL≦90aS).

又、熱サイクルテストにおいてもA/F変動が抑制され
る(ΔA/F≦0.02)。
Also, A/F fluctuations are suppressed in thermal cycle tests (ΔA/F≦0.02).

又、第3表の結果から、 11000rp 、  30
0℃の低回転(低温)時においては、ヒータが存在しな
い場合(試料魔35)ΔA/Pが大きくなってしまう。
Also, from the results in Table 3, 11000rp, 30
At low rotation (low temperature) of 0° C., ΔA/P becomes large if no heater is present (sample 35).

これは低温時にSiが混入した場合、IIa族成分によ
る吸着効果が弱まるためと考えられる。
This is considered to be because when Si is mixed in at low temperatures, the adsorption effect of group IIa components is weakened.

これに対して、ヒータを備えた本実施例の各素子胤28
〜34. Na37〜39はこの低温時におけるSiテ
スト後においてもA/F変動を顕著に抑制できる(ΔA
/P≦0.05)。
On the other hand, each element seed 28 of this embodiment equipped with a heater
~34. Na37-39 can significantly suppress A/F fluctuation even after the Si test at this low temperature (ΔA
/P≦0.05).

なお、vs2保護層について■a族酸成分貴金属とを別
個の保護部に存在させた場合、 A/Fの初期値はリッ
チ制御の傾向にあることも確認された(第4表)。
Regarding the vs2 protective layer, it was also confirmed that the initial value of A/F tends to be richly controlled when the group A acid component noble metal is present in a separate protective part (Table 4).

[発明の効果] 以上の如く本発明によれば、排ガス中にSi成分が存在
しても、その被毒を防いでA/Pを集中でき、かつ立ち
下がり応答性も優れる。加えて、エンジンの低回転時に
おいてもSil毒による性能劣化を確実に防止すること
もできる。
[Effects of the Invention] As described above, according to the present invention, even if Si components are present in the exhaust gas, the A/P can be concentrated by preventing the poisoning thereof, and the falling response is also excellent. In addition, performance deterioration due to Sil poisoning can be reliably prevented even when the engine rotates at low speeds.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の作用を示すセンサの一部断面図。 第2図は本発明の酸素センサの一例を示す一部断面図。 第3図、第4図は本発明の作用を示すセンサの一部断面
図(第3図はヒータ無の場合、第4図はヒータ有の場合
)。 第5図は本発明の酸素センサの一例(袋状)を示す一部
断面図。 第6図は本発明の酸素センサの一例(板状)を示す一部
断面図。 第7図は本発明に係る全域空燃比制御用酸素センサ(ポ
ンプ素子を併設したもの)の−例を示す断面図。 第8図は本発明に係る半導体型酸素センサの一例を示す
図であって、第8(a)図はその平面図(但し保護層は
省略)、第8(b)図はその断面図。 第9図はテス、ト後における制御中の出力を示す波形の
略図。 第10図、第11図はセンサ出力の波形の一例及び計測
時間(T LR、、T RL )を規定する図。 第12図は初期及び耐久後の制# A/Fの変化を示す
グラフ、そして 第13図は初期及び耐久後の(T LR+ TRL )
の変化を示すグラフ。 を夫々表わす。 1・・・素子本体    2・・・測定電極4・・・第
1保護層   5・・・第2保護層5a・・・耐熱性金
属酸化物 (特に非化学量論的化合物) 5b・・・IIa族成分
FIG. 1 is a partial sectional view of a sensor showing the effect of the present invention. FIG. 2 is a partial cross-sectional view showing an example of the oxygen sensor of the present invention. 3 and 4 are partial sectional views of a sensor showing the effect of the present invention (FIG. 3 is a case without a heater, and FIG. 4 is a case with a heater). FIG. 5 is a partial cross-sectional view showing an example (bag-shaped) oxygen sensor of the present invention. FIG. 6 is a partial cross-sectional view showing an example (plate-shaped) of the oxygen sensor of the present invention. FIG. 7 is a cross-sectional view showing an example of the oxygen sensor for wide range air-fuel ratio control (combined with a pump element) according to the present invention. FIG. 8 is a diagram showing an example of a semiconductor type oxygen sensor according to the present invention, in which FIG. 8(a) is a plan view thereof (however, a protective layer is omitted), and FIG. 8(b) is a sectional view thereof. FIG. 9 is a schematic diagram of waveforms showing the output during control after testing. FIG. 10 and FIG. 11 are diagrams defining an example of the waveform of the sensor output and measurement times (T LR, , T RL ). Figure 12 is a graph showing changes in control #A/F at the initial stage and after durability, and Figure 13 is a graph showing changes in control #A/F at the initial stage and after durability.
Graph showing changes in . respectively. DESCRIPTION OF SYMBOLS 1...Element body 2...Measuring electrode 4...First protective layer 5...Second protective layer 5a...Heat-resistant metal oxide (especially non-stoichiometric compound) 5b... Group IIa components

Claims (8)

【特許請求の範囲】[Claims] (1)排気ガス中の酸素濃度を検出するセンサにおいて
、センサ素子の排気ガスにさらされる側に耐熱性金属酸
化物からなり周期律表IIa族元素からなる成分(以下、
「IIa族成分」という)を担持した保護層を備え、該保
護層の少なくとも一部が耐熱性金属酸化物について非化
学量論的化合物として存在していることを特徴とする酸
素センサ。
(1) In a sensor that detects the oxygen concentration in exhaust gas, the side of the sensor element exposed to exhaust gas is made of a heat-resistant metal oxide and consists of a group IIa element of the periodic table (hereinafter referred to as
1. An oxygen sensor comprising a protective layer supporting a group IIa component (referred to as a "group IIa component"), at least a part of which exists as a non-stoichiometric compound with respect to a heat-resistant metal oxide.
(2)排気ガス中の酸素濃度を検出するセンサにおいて
、センサ素子を加熱するヒータを備え、センサ素子の排
気ガスにさらされる側に耐熱性金属酸化物からなりIIa
族成分を担持した保護層を備え、該保護層の少なくとも
一部が耐熱性金属酸化物について非化学量論的化合物と
して存在していることを特徴とする酸素センサ。
(2) A sensor that detects the oxygen concentration in exhaust gas is equipped with a heater that heats the sensor element, and the side of the sensor element exposed to the exhaust gas is made of heat-resistant metal oxide IIa.
1. An oxygen sensor comprising a protective layer supporting a group component, at least a part of which exists as a non-stoichiometric compound with respect to a heat-resistant metal oxide.
(3)保護層が貴金属をも含有している請求項1、2の
一記載の酸素センサ。
(3) The oxygen sensor according to claim 1 or 2, wherein the protective layer also contains a noble metal.
(4)排気ガス中の酸素濃度を検出するセンサにおいて
、センサ素子の排気ガスにさらされる側に耐熱性金属酸
化物からなりIIa族成分及び貴金属を担持した保護層を
備え、該保護層の少なくとも一部が耐熱性金属酸化物に
ついて非化学量論的化合物として存在し、貴金属が担持
された部分がIIa族成分が担持された部分よりも電極に
近接して位置することを特徴とする酸素センサ。
(4) In a sensor for detecting oxygen concentration in exhaust gas, a protective layer made of a heat-resistant metal oxide and supporting a group IIa component and a noble metal is provided on the side of the sensor element exposed to exhaust gas, and at least An oxygen sensor in which a part of the heat-resistant metal oxide exists as a non-stoichiometric compound, and the part on which the noble metal is supported is located closer to the electrode than the part on which the Group IIa component is supported. .
(5)排気ガス中の酸素濃度を検出するセンサにおいて
、センサ素子を加熱するヒータを備え、センサ素子の排
気ガスにさらされる側に耐熱性金属酸化物からなりIIa
族成分及び貴金属を担持した保護層を備え、該保護層の
少なくとも一部が耐熱性金属酸化物について非化学量論
的化合物として存在し、貴金属が担持された部分がIIa
族成分が担持された部分よりも電極に近接して位置する
ことを特徴とする酸素センサ。
(5) A sensor that detects the oxygen concentration in exhaust gas is equipped with a heater that heats the sensor element, and the side of the sensor element exposed to the exhaust gas is made of heat-resistant metal oxide IIa.
A protective layer supporting a group component and a noble metal, at least a part of the protective layer exists as a non-stoichiometric compound with respect to the heat-resistant metal oxide, and the part supporting the noble metal is IIa.
An oxygen sensor characterized by being located closer to an electrode than a portion on which a group component is supported.
(6)非化学量論的化合物がチタニアであり、該チタニ
ア粒子にIIa族成分を分散担持してなる保護層であるこ
とを特徴とする請求項1、2、4、5の一記載の酸素セ
ンサ。
(6) The oxygen according to any one of claims 1, 2, 4, and 5, wherein the non-stoichiometric compound is titania, and the protective layer is formed by dispersing and carrying a group IIa component on the titania particles. sensor.
(7)センサ素子の本体がZrO_2固体電解質からな
ることを特徴とする請求項1、2、4、5の一記載の酸
素センサ。
(7) The oxygen sensor according to any one of claims 1, 2, 4, and 5, wherein the main body of the sensor element is made of ZrO_2 solid electrolyte.
(8)前記IIa族成分を含有しない保護層が貴金属を含
有し、センサ素子の本体の測定電極側表面が凸凹10μ
m以上を有する請求項1、2、4、5の一記載の酸素セ
ンサ。
(8) The protective layer that does not contain the Group IIa component contains a noble metal, and the surface of the main body of the sensor element on the measurement electrode side has an unevenness of 10 μm.
The oxygen sensor according to any one of claims 1, 2, 4, and 5, which has an oxygen sensor of at least m.
JP1252025A 1988-11-01 1989-09-29 Oxygen sensor for prevention of Si poisoning Expired - Fee Related JP2748031B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1252025A JP2748031B2 (en) 1988-11-01 1989-09-29 Oxygen sensor for prevention of Si poisoning
DE68927087T DE68927087T2 (en) 1988-11-01 1989-10-31 Oxygen-sensitive sensor and method for its production
EP89120196A EP0369238B1 (en) 1988-11-01 1989-10-31 Oxygen sensor and method for producing same
US08/408,132 US5849165A (en) 1988-11-01 1995-03-21 Oxygen sensor for preventing silicon poisoning
HK9997A HK9997A (en) 1988-11-01 1997-01-23 Oxygen sensor and method for producing same

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP63-276744 1988-11-01
JP63-276743 1988-11-01
JP27674488 1988-11-01
JP27674388 1988-11-01
JP1-63942 1989-03-17
JP6394289 1989-03-17
JP1252025A JP2748031B2 (en) 1988-11-01 1989-09-29 Oxygen sensor for prevention of Si poisoning

Publications (2)

Publication Number Publication Date
JPH02222831A true JPH02222831A (en) 1990-09-05
JP2748031B2 JP2748031B2 (en) 1998-05-06

Family

ID=27464378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1252025A Expired - Fee Related JP2748031B2 (en) 1988-11-01 1989-09-29 Oxygen sensor for prevention of Si poisoning

Country Status (1)

Country Link
JP (1) JP2748031B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0968515A (en) * 1995-08-31 1997-03-11 Denso Corp Oxygen sensor element
JP2013011523A (en) * 2011-06-29 2013-01-17 Toyota Motor Corp Gas sensor element and gas sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0968515A (en) * 1995-08-31 1997-03-11 Denso Corp Oxygen sensor element
JP2013011523A (en) * 2011-06-29 2013-01-17 Toyota Motor Corp Gas sensor element and gas sensor

Also Published As

Publication number Publication date
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