JPH02224284A - How to form an active matrix liquid crystal display - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an active matrix liquid crystal display, and particularly to a method of forming a display portion suitable for a large area display.

[Conventional technology]

Conventionally, the structure of the display section of a polycrystalline silicon active matrix liquid crystal display is, for example, 5ID85DIGEST.
pp. 282-285.

Here, FIG. 2 shows a cross-sectional structure of the display section used above. In Fig. 2, 10 is a quartz substrate, 11 is a 5i
12 is intrinsic polycrystalline silicon, 13 is polycrystalline silicon doped with boron, 14 is P S G (p
15 is ITO (Indium Tin Oxide), 1
6 is AQ.

[Problem to be solved by the invention]

In the conventional technique described above, for example, in the structure of the display section as shown in FIG. 2, at least five masks are required. By the way, when a large-area display is assumed, the problem of mask alignment becomes an extremely important issue.

Therefore, when forming a large-area display, it is necessary to devise a process that reduces the number of masks as much as possible.

It is an object of the present invention to invent a process that reduces the number of masks compared to conventional active matrix liquid crystal display manufacturing processes.

[Means to solve the problem]

The above purpose is a method for forming a display part of an active matrix liquid crystal display, in which a) an intrinsic semiconductor film is deposited on a glass substrate, and the intrinsic semiconductor film is patterned by one resist process and one etching process, and b) resist removal. After that, a gate insulating film and an opaque gate electrode film are sequentially deposited, the opaque gate electrode film and gate insulating film are patterned by one resist process and multiple etching processes, and ions are implanted after removing the resist, c) After that, an interlayer insulating film is deposited, and the glabellar insulating film is patterned by one resist process and one etching process. d) After removing the resist, depositing an opaque signal electrode film,
Patterning the opaque signal electrode film by one resist process and one etching process e) After removing the resist, ITO.

This is achieved by sequentially depositing the resist f) By irradiating light from the glass substrate side, leaving only the resist in the exposed area g) Then patterning the ITO by one etching process.

[Effect]

With the above process, the display section of an active matrix liquid crystal display can be formed using four masks. Therefore, overall mask alignment is easier than in the prior art.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG.

FIG. 1 shows one process procedure of the display section forming method of the present invention. That is, a) an intrinsic polycrystalline silicon film 2 is deposited on a glass substrate 1, and the intrinsic polycrystalline silicon film 2 is patterned by one resist process and one etching process; b) after the resist is removed, a 5iOz film 3. Cr
Cr4. The Si○2 film 3 is patterned, and after the resist is removed, P (phosphorus) ions are implanted.

As a result, a part of the intrinsic polycrystalline silicon film 2 becomes an n-type polycrystalline silicon film 5.c) After that, a 5iOz film 3 is deposited, and the 5iOz film 3 is patterned by one resist process and one etching process. d) After removing the resist, deposit AQ6 and pattern AΩ6 by one resist process and one etching process e
) After removing the resist, ITO 7 and resist 8 are sequentially deposited. f) By irradiating light from the glass substrate 1 side,
Only the resist 8 in the area to be exposed is left. g) After that, the ITO 7 is patterned by one etching process, and then the resist 8 is removed.

That is, according to the above procedure, the display portion of the liquid crystal display can be formed using four masks. Therefore, overall mask alignment is easier than in the prior art.

Fig. 3 shows the plane pattern of Fig. 1 (g) within one dot of the display section. In Fig. 0, 4 is Cr;
5 is an n-type polycrystalline silicon film, 6 is AQ, 7 is ITo, 9
is a contact hole.

〔Effect of the invention〕

According to the present invention, since a liquid crystal display can be formed with a small number of masks, there are effects such as 1) a larger display area, 2) a higher throughput of the display, and 3) a lower cost of the display.

[Brief explanation of the drawing]

FIG. 1 is a process procedure diagram of a display unit according to an embodiment of the present invention;
FIG. 2 is a sectional view of a conventional display section, and FIG. 3 is a plan pattern diagram of a display section according to an embodiment of the present invention. 1... Glass substrate, 2... Intrinsic polycrystalline silicon film,
3...5iOz, 4...Cr, 5...n-type polycrystalline silicon film, 6...AQ, 7...ITO18...
Resist, 9... Contact hole, 10... Quartz substrate, 11... 5102.12... Intrinsic polycrystalline silicon, 13... Polycrystalline silicon doped with boron, 14... PSG . (e) ke) (i) (revised) High λ diagram

Claims (1)

[Claims] 1. In a method for forming a display section of an active matrix liquid crystal display, a) an intrinsic semiconductor film is deposited on a glass substrate, and the intrinsic semiconductor film is patterned by one resist process and one etching process. b) After removing the resist, sequentially deposit a gate insulating film and an opaque gate electrode film, pattern the opaque gate electrode film and gate insulating film by one resist process and multiple etching processes, and then remove the resist. c) After that, deposit an interlayer insulating film and pattern the interlayer insulating film by one resist process and one etching process. d) After removing the resist, deposit an opaque signal electrode film, and then pattern it by one resist process and one etching process. Patterning the opaque signal electrode film by a resist process and one etching process; e) After removing the resist, I
TO and resist are sequentially deposited; f) Irradiation of light from the glass substrate side leaves only the resist in the exposed area; g) After that, one etching process removes ITO.
A method of forming an active matrix liquid crystal display, comprising a process of patterning. 2. The method for forming the display part of an active matrix liquid crystal display is characterized in that both the scanning electrodes and the signal electrodes are made of opaque material, and that the method includes a process of patterning ITO by exposing it to light from the glass substrate side after applying a resist. A method for forming active matrix liquid crystal displays. 3. A method for forming an active matrix liquid crystal display, wherein the intrinsic semiconductor film according to claim 1 is a polycrystalline silicon film or an amorphous silicon film.